H. Hashim and B. F. Usher
The Incorporation of In in GaAsN as a Means of N Fraction Calibration
788 - 793
2011
5
9
International Journal of Materials and Metallurgical Engineering
https://publications.waset.org/pdf/15068
https://publications.waset.org/vol/57
World Academy of Science, Engineering and Technology
InGaAsN and GaAsN epitaxial layers with similar
nitrogen compositions in a sample were successfully grown on a
GaAs (001) substrate by solid source molecular beam epitaxy. An
electron cyclotron resonance nitrogen plasma source has been used to
generate atomic nitrogen during the growth of the nitride layers. The
indium composition changed from sample to sample to give
compressive and tensile strained InGaAsN layers. Layer
characteristics have been assessed by highresolution xray
diffraction to determine the relationship between the lattice constant
of the GaAs1yNy layer and the fraction x of In. The objective was to
determine the In fraction x in an InxGa1xAs1yNy epitaxial layer which
exactly cancels the strain present in a GaAs1yNy epitaxial layer with
the same nitrogen content when grown on a GaAs substrate.
Open Science Index 57, 2011