Performance of InGaN/GaN Laser Diode Based on Quaternary Alloys Stopper and Superlattice Layers
The optical properties of InGaN/GaN laser diode based on quaternary alloys stopper and superlattice layers are numerically studied using ISE TCAD (Integrated System Engineering) simulation program. Improvements in laser optical performance have been achieved using quaternary alloy as superlattice layers in InGaN/GaN laser diodes. Lower threshold current of 18 mA and higher output power and slope efficiency of 22 mW and 1.6 W/A, respectively, at room temperature have been obtained. The laser structure with InAlGaN quaternary alloys as an electron blocking layer was found to provide better laser performance compared with the ternary AlxGa1-xN blocking layer.
Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1062654Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1926
 M. Miyoshi, H. Ishikawa, T. Egawa, K. Asai, M. Mouri, T. Shibata , M. Tanaka and O. Oda, "High-electron-mobility AlGaN/AlN/GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy" Appl. Phys. Lett.85, p.1710, July 2004.
 L X Wang, M C Wang, X G Hu, X J Wang, S T Chen, G. Jiao , P J Li, P Y Zeng and M J Li, "Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates" Solid-StateElectronics, 49, pp. 1387-1390, Aug 2005 .
 V. Adivarahan, S. Wu, P J Zhang, A. Chitnis, M. Shatalov, V. Mandavilli, R. Gaska and A M Khan,"High-efficiency 269 nm emission deep ultraviolet light-emitting diodes" Appl.Phys.Lett, 84, p.4762, May 2004 .
 T. Nishida, H. Saito and N. Kobayashi, "Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN" Appl.Phys.Lett, 79, p.711, June 2001.
 C. Skierbiszewski, P. Perlin, I. Grzegory, R. Z Wasilewski, M. Siekacz, A. Feduniewicz, P. Wisniewski, J. Borysiuk, P. Prystawko, G. Kamler, T. Suski and S. Porowski," High power blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular beam epitaxy" Semiconductor. Sci. Tech, vol 20,p. 809, June 2005.
 H Hirayama, "Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes" J.Appl.Phys, 97, p.091101, April 2005.
 K H Cho, H K Lee, W S Kim, S K Park, H Y Cho and H J Lee, "Influence of growth temperature and reactor pressure on microstructural and optical properties of InAlGaN quaternary epilayers" J.Crystal Growth, 267,pp. 67-73, 2004 ,
 C H Chen, L Y Huang, Y F Chen, H X Jiang and J Y Lin, "Mechanism of enhanced luminescence in InxAlyGa1-x-yN quaternary alloys",Appl.Phys.Lett, 80,p.1397, February 2002..
 A Yasan, R. McClintock, K. Mayes, S. R Darvish, H. Zhang, P. Kung, M. Razeghi, K S Lee and Y J Han, "Comparison of ultraviolet light-emitting diodes with peak emission at 340 nm grown on GaN substrate and sapphire" Appl.Phys.Lett, 81,p.2151, July 2002 .
 E. Monroy, N. Gogneau, D. Jalabert, E. Bellet-Amalric, Y. Hori, F. Enjalbert, S L Dang and B. Daudin., "In incorporation during the growth of quaternary III-nitride compounds by plasma-assisted molecular beam epitaxy" Appl.Phys.Lett, 82,p.2242, February 2003 .
 C. Skierbiszewski, Z. R. Wasilewski , M. Siekacz, A. Feduniewicz, P. Perlin, P. Wisniewski, J. Borysiuk, I. Grzegory, M. Leszczynski, T. Suski, and S. Porowskib) "Blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular-beam epitaxy", High Pressure Research Center, PAS, Soko┼éowska 29/37, 01-142 Warsaw, Poland Appl.Phys.Lett., 86, 011114, December2005.
 Integrated System Engineering (ISE TCAD) AG, Switzerland, http://www.synopsys.com.
 S. M. Thahab, H. Abu Hassan and Z. Hassan, "Performance and optical characteristic of InGaN MQWs laser diodes" Opt. Exp., 15, No.5, p.2380 March (2007).