Search results for: Schottky diode

Authors: Zubair Ahmad, Muhammad Hassan Sayyad

Abstract:

In this paper, fabrication and study of electronic properties of Au/methyl-red/Ag surface type Schottky diode by current-voltage (I-V) method has been reported. The I-V characteristics of the Schottky diode showed the good rectifying behavior. The values of ideality factor n and barrier height b of Au/methyl-red/Ag Schottky diode were calculated from the semi-log I-V characteristics and by using the Cheung functions. From semi-log current-voltage characteristics the values of n and b were found 1.93 and 0.254 eV, respectively, while by using Cheung functions their values were calculated 1.89 and 0.26 eV, respectively. The effect of series resistance was also analyzed by Cheung functions. The series resistance RS values were determined from dV/d(lnI)–I and H(I)–I graphs and were found to be 1.1 k and 1.3 k, respectively.

Keywords: Surface type Schottky diodes, Methyl-red, Currentvoltage method

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Authors: Somayeh Gholami, Meysam Khakbaz

Abstract:

The current-voltage characteristics of a PtSi/p-Si Schottky barrier diode was measured at the temperature of 85 K and from the forward bias region of the I-V curve, the electrical parameters of the diode were measured by three methods. The results obtained from the two methods which considered the series resistance were in close agreement with each other and from them barrier height (
), ideality factor (n) and series resistance () were found to be 0.2045 eV, 2.877 and 14.556 K
respectively. By measuring the I-V characteristics in the temperature range of 85-136 K the electrical parameters were observed to have strong dependency on temperature. The increase of barrier height and decrease of ideality factor with increasing temperature is attributed to the existence of barrier height inhomogeneities in the silicide-semiconductor structure.

Keywords: Schottky diode, barrier height, series resistance, I-V, barrier height inhomogeneities.

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Authors: Alexey V. Klyuev, Arkady V. Yakimov, Mikhail I. Ryzhkin, Andrey V. Klyuev

Abstract:

Fluctuations of Schottky diode parameters in a structure of the mixer are investigated. These fluctuations are manifested in two ways. At the first, they lead to fluctuations in the transfer factor that is lead to the amplitude fluctuations in the signal of intermediate frequency. On the basis of the measurement data of 1/f noise of the diode at forward current, the estimation of a spectrum of relative fluctuations in transfer factor of the mixer is executed. Current dependence of the spectrum of relative fluctuations in transfer factor of the mixer and dependence of the spectrum of relative fluctuations in transfer factor of the mixer on the amplitude of the heterodyne signal are investigated. At the second, fluctuations in parameters of the diode lead to occurrence of 1/f noise in the output signal of the mixer. This noise limits the sensitivity of the mixer to the value of received signal.

Keywords: Current-voltage characteristic, fluctuations, mixer, Schottky diode, 1/f noise.

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Authors: A. Lakrim, D. Tahri

Abstract:

This paper sets out a behavioral macro-model of a Merged PiN and Schottky (MPS) diode based on silicon carbide (SiC). This model holds good for both static and dynamic electrothermal simulations for industrial applications. Its parameters have been worked out from datasheets curves by drawing on the optimization method: Simulated Annealing (SA) for the SiC MPS diodes made available in the industry. The model also adopts the Analog Behavioral Model (ABM) of PSPICE in which it has been implemented. The thermal behavior of the devices was also taken into consideration by making use of Foster’ canonical network as figured out from electro-thermal measurement provided by the manufacturer of the device.

Keywords: SiC MPS Diode, electro-thermal, SPICE Model.

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Authors: Chia-Jui Yu, Chien-Ju Chen, Jyun-Hao Liao, Chia-Ching Wu, Meng-Chyi Wu

Abstract:

In this letter, we demonstrate high-performance AlGaN/GaN planar Schottky barrier diodes (SBDs) on the silicon substrate with field plate structure for increasing breakdown voltage V_B. A low turn-on resistance R_ON (3.55 mΩ-cm²), low reverse leakage current (< 0.1 µA) at -100 V, and high reverse breakdown voltage V_B (> 1.1 kV) SBD has been fabricated. A virgin SBD exhibited a breakdown voltage (measured at 1 mA/mm) of 615 V, and with the field plate technology device exhibited a breakdown voltage (measured at 1 mA/mm) of 1525 V (the anode–cathode distance was L_AC = 40 µm). Devices without the field plate design exhibit a Baliga’s figure of merit of V_B²/ R_ON = 60.2 MW/cm², whereas devices with the field plate design show a Baliga’s figure of merit of V_B²/ R_ON = 340.9 MW/cm² (the anode–cathode distance was L_AC = 20 µm).

Keywords: AlGaN/GaN heterostructure, silicon substrate, Schottky barrier diode, high breakdown voltage, field plate, Baliga’s figure-of-merit.

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Authors: Muhammad Tahir, Muhammad H. Sayyad, Dil N. Khan, Fazal Wahab

Abstract:

Herein, the organic semiconductor methyl orange (MO), is investigated for the first time for its electronic applications. For this purpose, Al/MO/n-Si heterojunction is fabricated through economical cheap and simple “drop casting” technique. The currentvoltage (I-V) measurements of the device are made at room temperature under dark conditions. The I-V characteristics of Al/MO/n-Si junction exhibits asymmetrical and rectifying behavior that confirms the formation of diode. The diode parameters such as rectification ratio (RR), turn on voltage (Vturn on), reverse saturation current (I0), ideality factor (n), barrier height ( b f ), series resistance (Rs) and shunt resistance (Rsh) are determined from I-V curves using Schottky equations. These values of these parameters are also extracted and verified by applying Cheung’s functions. The conduction mechanisms are explained from the forward bias I-V characteristics using the power law.

Keywords: Electrical properties, Organic/inorganic heterojunction diode, Methyl Orange, Cheungs Functions

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Authors: S.Aksoy, Y.Caglar

Abstract:

n-CdO/p-Si heterojunction diode was fabricated using sol-gel spin coating technique which is a low cost and easily scalable method for preparing of semiconductor films. The structural and morphological properties of CdO film were investigated. The X-ray diffraction (XRD) spectra indicated that the film was of polycrystalline nature. The scanning electron microscopy (SEM) images indicate that the surface morphology CdO film consists of the clusters formed with the coming together of the nanoparticles. The electrical characterization of Au/n-CdO/p–Si/Al heterojunction diode was investigated by current-voltage. The ideality factor of the diode was found to be 3.02 for room temperature. The reverse current of the diode strongly increased with illumination intensity of 100 mWcm-2 and the diode gave a maximum open circuit voltage Voc of 0.04 V and short-circuits current Isc of 9.92×10-9 A.

Keywords: CdO, heterojunction semiconductor devices, ideality factor, current-voltage characteristics

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Authors: Hassan H. Abuelhassan, M. Ali Badawi, Abdelrahman A. Elbadawi, Adam A. Elbashir

Abstract:

In this paper, the effect of the injected current and temperature into the output power of the laser diode module operating at 808nm were applied, studied and discussed. Low power diode laser was employed as a source. The experimental results were demonstrated and then the output power of laser diode module operating at 808nm was clearly changed by the thermal temperature and injected current. The output power increases by the increasing the injected current and temperature. We also showed that the increasing of the injected current results rising in heat, which also, results into decreasing of the laser diode output power during the highest temperature as well. The best ranges of characteristics made by diode module operating at 808nm were carefully handled and determined.

Keywords: Laser diode, light amplification, injected current, output power.

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Authors: Gaurav Upadhyay, Nand Kishore, Prashant Ranjan, V. S. Tripathi, Shivesh Tripathi

Abstract:

A frequency reconfigurable multiband antenna for intelligent transportation system (ITS) applications is proposed in this paper. A PIN-diode is used for reconfigurability. Centre frequencies are 1.38, 1.98, 2.89, 3.86, and 4.34 GHz in “ON” state of Diode and 1.56, 2.16, 2.88, 3.91 and 4.45 GHz in “OFF” state. Achieved maximum bandwidth is 18%. The maximum gain of the proposed antenna is 2.7 dBi in “ON” state and 3.95 dBi in “OFF” state of the diode. The antenna is simulated, fabricated, and tested in the lab. Measured and simulated results are in good confirmation.

Keywords: ITS, multiband antenna, PIN-diode, reconfigurable.

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Authors: K. Al-Heuseen, M. R. Hashim

Abstract:

The current-voltage (I-V) characteristics of Pd/n-GaN Schottky barrier were studied at temperatures over room temperature (300-470K). The values of ideality factor (n), zero-bias barrier height (φB0), flat barrier height (φBF) and series resistance (Rs) obtained from I-V-T measurements were found to be strongly temperature dependent while (φBo) increase, (n), (φBF) and (Rs) decrease with increasing temperature. The apparent Richardson constant was found to be 2.1x10-9 Acm-2K-2 and mean barrier height of 0.19 eV. After barrier height inhomogeneities correction, by assuming a Gaussian distribution (GD) of the barrier heights, the Richardson constant and the mean barrier height were obtained as 23 Acm-2K-2 and 1.78eV, respectively. The corrected Richardson constant was very closer to theoretical value of 26 Acm-2K-2. 

Keywords: Electrical properties, Gaussian distribution, Pd-GaN Schottky diodes, thermionic emission.

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Authors: E. Farsad, S. P. Abbasi, A. Goodarzi, M. S. Zabihi

Abstract:

Nowadays, quasi-continuous wave diode lasers are used in a widespread variety of applications. Temperature effects in these lasers can strongly influence their performance. In this paper, the effects of temperature have been experimentally investigated on different features of a 60W-QCW diode laser. The obtained results indicate that the conversion efficiency and operation voltage of diode laser decrease with the augmentation of the working temperature associated with a redshift in the laser peak wavelength. Experimental results show the emission peak wavelength of laser shifts 0.26 nm and the conversion efficiency decreases 1.76 % with the increase of temperature from 40 to 50 ̊C. Present study also shows the slope efficiency decreases gradually at low temperatures and rapidly at higher temperatures. Regarding the close dependence of the mentioned parameters to the operating temperature, it is of great importance to carefully control the working temperature of diode laser, particularly for medical applications.

Keywords: diode laser, experimentally, temperature, wavelength

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Authors: Q. Zafar, R. Akram, Kh.S. Karimov, T.A. Khan, M. Farooq, M.M. Tahir

Abstract:

In this study we present the effect of elevated temperatures from 300K to 400K on the electrical properties of copper Phthalocyanine (CuPc) based organic field effect transistors (OFET). Thin films of organic semiconductor CuPc (40nm) and semitransparent Al (20nm) were deposited in sequence, by vacuum evaporation on a glass substrate with previously deposited Ag source and drain electrodes with a gap of 40 μm. Under resistive mode of operation, where gate was suspended it was observed that drain current of this organic field effect transistor (OFET) show an increase with temperature. While in grounded gate condition metal (aluminum) – semiconductor (Copper Phthalocyanine) Schottky junction dominated the output characteristics and device showed switching effect from low to high conduction states like Zener diode at higher bias voltages. This threshold voltage for switching effect has been found to be inversely proportional to temperature and shows an abrupt decrease after knee temperature of 360K. Change in dynamic resistance (Rd = dV/dI) with respect to temperature was observed to be -1%/K.

Keywords: Copper Phthalocyanine, Metal-Semiconductor Schottky Junction, Organic Field Effect Transistor, Switching effect, Temperature Sensor

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Authors: G. Kalpanadevi, S. Ravimaran, M. Shanmugapriya

Abstract:

A Reconfigurable Wilkinson power divider is proposed in this paper. In existing system only a limited number of bandwidth is used at the output ports, in the proposed Wilkinson power divider different band of frequencies are obtained by using PIN diode. By tuning the PIN diode, different frequencies are achieved. The size of the power divider is reduced for the operating frequency and increases the fractional bandwidth.

Keywords: Isolation loss, PIN diode, Reconfigurable Wilkinson power divider and WLAN applications.

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Authors: K. Echchakhaoui, E. Abdelmounim, J. Zbitou, H. Bennis, N. Ababssi, M. Latrach

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In this paper a new design of a broadband microwave power limiter is presented and validated into simulation by using ADS software (Advanced Design System) from Agilent technologies. The final circuit is built on microstrip lines by using identical Zero Bias Schottky diodes. The power limiter is designed by Associating 3 stages Schottky diodes. The obtained simulation results permit to validate this circuit with a threshold input power level of 0 dBm until a maximum input power of 30 dBm.

Keywords: Limiter, microstrip, zero-biais.

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Authors: Dzmitry M. Kabanau, Vladimir V. Kabanov, Yahor V. Lebiadok, Denis V. Shabrov, Pavel V. Shpak, Gevork T. Mikaelyan, Alexandr P. Bunichev

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This article is deal with the experimental investigations of the laser diode matrixes (LDM) based on the AlGaAs/GaAs heterostructures (lasing wavelength 790-880 nm) to find optimal LDM parameters for active vision systems. In particular, the dependence of LDM radiation pulse power on the pulse duration and LDA active layer heating as well as the LDM radiation divergence are discussed.

Keywords: Active vision systems, laser diode matrixes, thermal properties, radiation divergence.

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Authors: M. Khalid Imran, Syed Masood, Milan Brandt, Sudip Bhattacharya, Jyotirmoy Mazumder

Abstract:

In the present investigation, H13 tool steel has been deposited on copper alloy substrate using both CO2 and diode laser. A detailed parametric analysis has been carried out in order to find out optimum processing zone for coating defect free H13 tool steel on copper alloy substrate. Followed by parametric optimization, the microstructure and microhardness of the deposited clads have been evaluated. SEM micrographs revealed dendritic microstructure in both clads. However, the microhardness of CO2 laser deposited clad was much higher compared to diode laser deposited clad.

Keywords: CO2 laser, Diode laser, Direct Metal Deposition, Microstructure, Microhardness, Porosity.

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Authors: Shiyang Zhu, Guo-Qiang Lo, Dim-Lee Kwong

Abstract:

We prove detailed analysis of a waveguide-based Schottky barrier photodetector (SBPD) where a thin silicide film is put on the top of a silicon-on-insulator (SOI) channel waveguide to absorb light propagating along the waveguide. Taking both the confinement factor of light absorption and the wall scanning induced gain of the photoexcited carriers into account, an optimized silicide thickness is extracted to maximize the effective gain, thereby the responsivity. For typical lengths of the thin silicide film (10-20 Ðçm), the optimized thickness is estimated to be in the range of 1-2 nm, and only about 50-80% light power is absorbed to reach the maximum responsivity. Resonant waveguide-based SBPDs are proposed, which consist of a microloop, microdisc, or microring waveguide structure to allow light multiply propagating along the circular Si waveguide beneath the thin silicide film. Simulation results suggest that such resonant waveguide-based SBPDs have much higher repsonsivity at the resonant wavelengths as compared to the straight waveguidebased detectors. Some experimental results about Si waveguide-based SBPD are also reported.

Keywords: Infrared detector, Schottky-barrier, Silicon waveguide, Silicon photonics

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Authors: Mohammad Seifi, Azura Bt. Che Soh, Noor Izzrib. Abd. Wahab, Mohd Khair B. Hassan

Abstract:

Solar energy has a major role in renewable energy resources. Solar Cell as a basement of solar system has attracted lots of research. To conduct a study about solar energy system, an authenticated model is required. Diode base PV models are widely used by researchers. These models are classified based on the number of diodes used in them. Single and two-diode models are well studied. Single-diode models may have two, three or four elements. In this study, these solar cell models are examined and the simulation results are compared to each other. All PV models are re-designed in the Matlab/Simulink software and they examined by certain test conditions and parameters. This paper provides comparative studies of these models and it tries to compare the simulation results with manufacturer-s data sheet to investigate model validity and accuracy. The results show a four- element single-diode model is accurate and has moderate complexity in contrast to the two-diode model with higher complexity and accuracy

Keywords: Fill Factor (FF), Matlab/Simulink, Maximum PowerPoint (MPP), Maximum Power Point Tracker (MPPT), Photo Voltaic(PV), Solar cell, Standard Test Condition (STC).

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Authors: P. Ram Mohan, M. Vijaya Kumar, O. V. Raghava Reddy

Abstract:

This paper deals with the simulation of a Boost Power Factor Correction (PFC) Converter with Electro Magnetic Interference (EMI) Filter. The diode rectifier with output capacitor gives poor power factor. The Boost Converter of PFC Circuit is analyzed and then simulated with diode rectifier. The Boost PFC Converter with EMI Filter is simulated for resistive load. The power factor is improved using the proposed converter.

Keywords: Boost Converter, Power Factor Correction, Electro Magnetic Interference, Diode Rectifier

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Authors: Hongjun Liu, Cunxiao Gao, Jintao Tao, Wei Zhao, Yishan Wang

Abstract:

A compact tunable 10 W picosecond source based on Yb-doped fiber amplification of gain switch laser diode has been demonstrated. A gain switch semiconductor laser diode was used as the seed source, and a multi-stage single mode Yb-doped fiber preamplifier was combined with two large mode area double-clad Yb-doped fiber main amplifiers to construct the amplification system. The tunable pulses with high stability and excellent beam quality (M2<1.2) of 10 W average power 150 ps pulse duration at 1 MHz repetition rate were obtained. The central wavelength with the line width of 2.5-3 nm was tunable from 1053 nm to 1073 nm.

Keywords: Fiber laser, fiber amplifier, picosecond laser, highpower laser

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Authors: Hardik Vaghela, Mamta Khosla, Balwindar Raj

Abstract:

In this paper, we present and investigate a double gate PN diode based tunnel field effect transistor (DGPNTFET). The importance of proposed structure is that the formation of different drain doping is not required and ambipolar effect in OFF state is completely removed for this structure. Validation of this structure to behave like a Tunnel Field Effect Transistor (TFET) is carried out through energy band diagrams and transfer characteristics. Simulated result shows point subthreshold slope (SS) of 19.14 mV/decade and ON to OFF current ratio (I_ON / I_OFF) of 2.66 × 10¹⁴ (I_ON at V_GS=1.5V, V_DS=1V and I_OFF at V_GS=0V, V_DS=1V) for gate length of 20nm and HfO₂ as gate oxide at room temperature. Which indicate that the DGPNTFET is a promising candidate for nano-scale, ambipolar free switch.

Keywords: Ambipolar effect, double gate PN diode based tunnel field effect transistor, high-κ dielectric material, subthreshold slope, tunnel field effect transistor.

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Authors: B. M. Manjunatha, D. V. Ashok Kumar, M. Vijay Kumar

Abstract:

This paper proposes five level diode clamped Z source Inverter. The existing PWM techniques used for ZSI are restricted for two level. The two level Z Source Inverter have high harmonic distortions which effects the performance of the grid connected PV system. To improve the performance of the system the number of voltage levels in the output waveform need to be increased. This paper presents comparative analysis of a five level diode clamped Z source Inverter with different carrier based Modified Pulse Width Modulation techniques. The parameters considered for comparison are output voltage, voltage gain, voltage stress across switch and total harmonic distortion when powered by same DC supply. Analytical results are verified using MATLAB.

Keywords: Diode Clamped, Pulse Width Modulation, total harmonic distortion, Z Source Inverter.

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Authors: S.Srinivas

Abstract:

Multi-level voltage source inverters offer several advantages such as; derivation of a refined output voltage with reduced total harmonic distortion (THD), reduction of voltage ratings of the power semiconductor switching devices and also the reduced electro-magnetic-interference problems etc. In this paper, new carrier-overlapped phase-disposition or sub-harmonic sinusoidal pulse width modulation (CO-PD-SPWM) and also the carrieroverlapped phase-disposition space vector modulation (CO-PDSVPWM) schemes for a six-level diode-clamped inverter topology are proposed. The principle of the proposed PWM schemes is similar to the conventional PD-PWM with a little deviation from it in the sense that the triangular carriers are all overlapped. The overlapping of the triangular carriers on one hand results in an increased number of switchings, on the other hand this facilitates an improved spectral performance of the output voltage. It is demonstrated through simulation studies that the six-level diode-clamped inverter with the use of CO-PD-SPWM and CO-PD-SVPWM proposed in this paper is capable of generating multiple levels in its output voltage. The advantages of the proposed PWM schemes can be derived to benefit, especially at lower modulation indices of the inverter and hence this aspect of the proposed PWM schemes can be well exploited in high power applications requiring low speeds of operation of the drive.

Keywords: Diode clamped inverter, Pulse width modulation, Six level inverter, carrier based PWM.

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Authors: M. R. AlRashidi, K. M. El-Naggar, M. F. AlHajri

Abstract:

A new technique based on Pattern search optimization is proposed for estimating different solar cell parameters in this paper. The estimated parameters are the generated photocurrent, saturation current, series resistance, shunt resistance, and ideality factor. The proposed approach is tested and validated using double diode model to show its potential. Performance of the developed approach is quite interesting which signifies its potential as a promising estimation tool.

Keywords: Solar Cell, Parameter Estimation, Pattern Search.

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Authors: Hussein A. Kazem, Abdulhakeem Abdullah Albaloshi, Ali Said Ali Al-Jabri, Khamis Humaid AlSaidi

Abstract:

This paper proposes different methods for estimation of the harmonic currents of the single-phase diode bridge rectifier. Both simple and advanced methods are compared and the models are put into a context of practical use for calculating the harmonic distortion in a typical application. Finally, the different models are compared to measurements of a real application and convincing results are achieved.

Keywords: Single-phase rectifier, line side Harmonics

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Authors: Saba Zare Zardareh, Farhad Akbari Boroumand

Abstract:

The objective is to fabricate organic light emitting diode and to study its degradation process in atmosphere condition in which PFO as an emitting material and PEDOT:PSS as a hole injecting material were used on ITO substrate. Thus degradation process of the OLED was studied upon its current-voltage characteristic. By fabricating this OLED and obtaining blue light and analysis of current-voltage characteristic during the time after fabrication, it was observed that the current of the OLED was exponentially decreased. Current reduction during the initial hours of fabrication was outstanding and after few days its reduction rate was dropped significantly, while the diode was dying.

Keywords: OLED, Degradation, Dark spot.

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Authors: Fatima Zohra Mahi, Luca Varani

Abstract:

We present an analytical model for the calculation of the sensitivity, the spectral current noise and the detective parameter for an optically illuminated In0.53Ga0.47As n+nn+ diode. The photocurrent due to the excess carrier is obtained by solving the continuity equation. Moreover, the current noise level is evaluated at room temperature and under a constant voltage applied between the diode terminals. The analytical calculation of the current noise in the n+nn+ structure is developed by considering the free carries fluctuations. The responsivity and the detection parameter are discussed as functions of the doping concentrations and the emitter layer thickness in one-dimensional homogeneous n+nn+ structure.

Keywords: Responsivity, detection parameter, photo-detectors, continuity equation, current noise.

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Authors: Amit Kumar Gautam, Sudipta Majumdar

Abstract:

This paper presents parameter estimation of a single-phase rectifier using extended Kalman filter (EKF). The state space model has been obtained using Kirchhoff’s current law (KCL) and Kirchhoff’s voltage law (KVL). The capacitor voltage and diode current of the circuit have been estimated using EKF. Simulation results validate the better accuracy of the proposed method as compared to the least mean square method (LMS). Further, EKF has the advantage that it can be used for nonlinear systems.

Keywords: Extended Kalman filter, parameter estimation, single phase rectifier, state space modelling.

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Authors: F. Hadjaj, A. Belghachi, A. Halmaoui, M. Belhadj, H. Mazouz

Abstract:

A laser is essentially an optical oscillator consisting of a resonant cavity, an amplifying medium and a pumping source. In semiconductor diode lasers, the cavity is created by the boundary between the cleaved face of the semiconductor crystal and air, and has reflective properties as a result of the differing refractive indices of the two media. For a GaAs-air interface a reflectance of 0.3 is typical and therefore the length of the semiconductor junction forms the resonant cavity. To prevent light being emitted in unwanted directions from the junction, sides perpendicular to the required direction are roughened. The objective of this work is to simulate the optical resonator Fabry-Perot and explore its main characteristics, such as FSR, finesse, linewidth, transmission and so on, that describe the performance of resonator.

Keywords: Fabry-Perot Resonator, laser diode.

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Authors: M. Mohamadi, M. Mostamand, M. Moosavi, M. Soltanolkotabi

Abstract:

The output beam quality of multi transverse modes of laser, are relatively poor. In order to obtain better beam quality, one may use an aperture inside the laser resonator. In this case, various transverse modes can be selected. We have selected various transverse modes both by simulation and doing experiment. By inserting a circular aperture inside the diode end-pumped Nd:YAG pulsed laser resonator, we have obtained 00 TEM , 01 TEM , 20 TEM and have studied which parameters, can change the mode shape. Then, we have determined the beam quality factor of TEM00 gaussian mode.

Keywords: Beam shape, Transverse mode , Beam quality factor

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