WASET

	%0 Journal Article
	%A K. Al-Heuseen and  M. R. Hashim
	%D 2014
	%J International Journal of Physical and Mathematical Sciences
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 87, 2014
	%T Temperature-Dependent Barrier Characteristics of Inhomogeneous Pd/n-GaN Schottky Barrier Diodes Surface
	%U https://publications.waset.org/pdf/10002596
	%V 87
	%X The current-voltage (I-V) characteristics of Pd/n-GaN Schottky barrier were studied at temperatures over room temperature (300-470K). The values of ideality factor (n), zero-bias barrier height (&phi;B0), flat barrier height (&phi;BF) and series resistance (Rs) obtained from I-V-T measurements were found to be strongly temperature dependent while (&phi;Bo) increase, (n), (&phi;BF) and (Rs) decrease with increasing temperature. The apparent Richardson constant was found to be 2.1x10-9 Acm-2K-2 and mean barrier height of 0.19 eV. After barrier height inhomogeneities correction, by assuming a Gaussian distribution (GD) of the barrier heights, the Richardson constant and the mean barrier height were obtained as 23 Acm-2K-2 and 1.78eV, respectively. The corrected Richardson constant was very closer to theoretical value of 26 Acm-2K-2.&nbsp;

	%P 633 - 637