@article{(Open Science Index):https://publications.waset.org/pdf/2450,
	  title     = {Fabrication and Characterization of Al/Methyl Orange/n-Si Heterojunction Diode},
	  author    = {Muhammad Tahir and  Muhammad H. Sayyad and  Dil N. Khan and  Fazal Wahab},
	  country	= {},
	  institution	= {},
	  abstract     = {Herein, the organic semiconductor methyl orange
(MO), is investigated for the first time for its electronic applications.
For this purpose, Al/MO/n-Si heterojunction is fabricated through
economical cheap and simple “drop casting” technique. The currentvoltage
(I-V) measurements of the device are made at room
temperature under dark conditions. The I-V characteristics of
Al/MO/n-Si junction exhibits asymmetrical and rectifying behavior
that confirms the formation of diode. The diode parameters such as
rectification ratio (RR), turn on voltage (Vturn on), reverse saturation
current (I0), ideality factor (n), barrier height ( b
f ), series resistance
(Rs) and shunt resistance (Rsh) are determined from I-V curves using
Schottky equations. These values of these parameters are also
extracted and verified by applying Cheung’s functions. The
conduction mechanisms are explained from the forward bias I-V
characteristics using the power law.},
	    journal   = {International Journal of Chemical and Molecular Engineering},
	  volume    = {6},
	  number    = {1},
	  year      = {2012},
	  pages     = {90 - 93},
	  ee        = {https://publications.waset.org/pdf/2450},
	  url   	= {https://publications.waset.org/vol/61},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 61, 2012},
	}