@article{(Open Science Index):https://publications.waset.org/pdf/10007572, title = {Fabrication of High-Power AlGaN/GaN Schottky Barrier Diode with Field Plate Design}, author = {Chia-Jui Yu and Chien-Ju Chen and Jyun-Hao Liao and Chia-Ching Wu and Meng-Chyi Wu}, country = {}, institution = {}, abstract = {In this letter, we demonstrate high-performance AlGaN/GaN planar Schottky barrier diodes (SBDs) on the silicon substrate with field plate structure for increasing breakdown voltage VB. A low turn-on resistance RON (3.55 mΩ-cm2), low reverse leakage current (< 0.1 µA) at -100 V, and high reverse breakdown voltage VB (> 1.1 kV) SBD has been fabricated. A virgin SBD exhibited a breakdown voltage (measured at 1 mA/mm) of 615 V, and with the field plate technology device exhibited a breakdown voltage (measured at 1 mA/mm) of 1525 V (the anode–cathode distance was LAC = 40 µm). Devices without the field plate design exhibit a Baliga’s figure of merit of VB2/ RON = 60.2 MW/cm2, whereas devices with the field plate design show a Baliga’s figure of merit of VB2/ RON = 340.9 MW/cm2 (the anode–cathode distance was LAC = 20 µm). }, journal = {International Journal of Materials and Metallurgical Engineering}, volume = {11}, number = {8}, year = {2017}, pages = {528 - 532}, ee = {https://publications.waset.org/pdf/10007572}, url = {https://publications.waset.org/vol/128}, bibsource = {https://publications.waset.org/}, issn = {eISSN: 1307-6892}, publisher = {World Academy of Science, Engineering and Technology}, index = {Open Science Index 128, 2017}, }