Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 30124
The Effect of the Thermal Temperature and Injected Current on Laser Diode 808 nm Output Power

Authors: Hassan H. Abuelhassan, M. Ali Badawi, Abdelrahman A. Elbadawi, Adam A. Elbashir

Abstract:

In this paper, the effect of the injected current and temperature into the output power of the laser diode module operating at 808nm were applied, studied and discussed. Low power diode laser was employed as a source. The experimental results were demonstrated and then the output power of laser diode module operating at 808nm was clearly changed by the thermal temperature and injected current. The output power increases by the increasing the injected current and temperature. We also showed that the increasing of the injected current results rising in heat, which also, results into decreasing of the laser diode output power during the highest temperature as well. The best ranges of characteristics made by diode module operating at 808nm were carefully handled and determined.

Keywords: Laser diode, light amplification, injected current, output power.

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1125775

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1230

References:


[1] N. Edmonson “Technological foundations of cyclical economic growth,” The case of the United States economy. Transaction Publishers, 2011.
[2] D. Meschede, “Optics, light and lasers: the practical approach to modern aspects of photonics and laser physics,”. John Wiley & Sons, 2008.
[3] C. C. Davis “Laser and Electro – optics,” Cambridge London, 6th edition, 2014.
[4] W, Demtröder “Laser spectroscopy: basic concepts and instrumentation,” Springer Science & Business Media, 2013.
[5] J. Ion, “Laser processing of engineering materials,” principles, procedure and industrial application. Butterworth-Heinemann, 2005.
[6] O. Duscheck, -W., Zhang, Z.-X. “Laser Application in Medical Engineering ,” .13 (3): 161-166. 2004.
[7] M. Deubel, Von Freymann, G., Wegener, M., et al. “Direct laser writing of three-dimensional photonic-crystal templates for telecommunications”. Nature materials, 3 (7): 444-447, 2004.
[8] Z. Nurkhaizan and B. Noriah, “The effect of temperature on High Power Laser Diode”. J. Fiz. UTM. Vol. 3. 84-89. 2008
[9] J. Singh. “Semiconductor Optic–Electronics Physics and Technology,” New York 1995.
[10] D. Schröder, Meusel, J., Hennig, P., et al. “Increased power of broad-area lasers (808nm/980nm) and applicability to 10-mm bars with up to 1000Watt QCW”. In Lasers and Applications in Science and Engineering, 64560N-64560N-10, 2007.
[11] S. Xiang, B., Xiang, X.,Feng, C.-G.” Effects of temperature on laser diode ignition”. Optik-International Journal for Light and Electron Optics.120 (2): 85-88, 2009.
[12] L. Li, "The advances and characteristics of high-power diode laser materials processing," Optics and Lasers in Engineering, vol. 34, pp. 231-253, 2000.
[13] I. Eliashevich, J. Diaz, H. Yi, L. Wang, and M. Razeghi, "Reliability of aluminum -free 808 nm high- power laser diodes with uncoated mirrors," Applied Physics Letters, vol. 66, pp. 3087-3089, 1995.