Search results for: Pd-GaN Schottky diodes

Authors: K. Al-Heuseen, M. R. Hashim

Abstract:

The current-voltage (I-V) characteristics of Pd/n-GaN Schottky barrier were studied at temperatures over room temperature (300-470K). The values of ideality factor (n), zero-bias barrier height (φB0), flat barrier height (φBF) and series resistance (Rs) obtained from I-V-T measurements were found to be strongly temperature dependent while (φBo) increase, (n), (φBF) and (Rs) decrease with increasing temperature. The apparent Richardson constant was found to be 2.1x10-9 Acm-2K-2 and mean barrier height of 0.19 eV. After barrier height inhomogeneities correction, by assuming a Gaussian distribution (GD) of the barrier heights, the Richardson constant and the mean barrier height were obtained as 23 Acm-2K-2 and 1.78eV, respectively. The corrected Richardson constant was very closer to theoretical value of 26 Acm-2K-2. 

Keywords: Electrical properties, Gaussian distribution, Pd-GaN Schottky diodes, thermionic emission.

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Authors: K. Echchakhaoui, E. Abdelmounim, J. Zbitou, H. Bennis, N. Ababssi, M. Latrach

Abstract:

In this paper a new design of a broadband microwave power limiter is presented and validated into simulation by using ADS software (Advanced Design System) from Agilent technologies. The final circuit is built on microstrip lines by using identical Zero Bias Schottky diodes. The power limiter is designed by Associating 3 stages Schottky diodes. The obtained simulation results permit to validate this circuit with a threshold input power level of 0 dBm until a maximum input power of 30 dBm.

Keywords: Limiter, microstrip, zero-biais.

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Authors: A. Lakrim, D. Tahri

Abstract:

This paper sets out a behavioral macro-model of a Merged PiN and Schottky (MPS) diode based on silicon carbide (SiC). This model holds good for both static and dynamic electrothermal simulations for industrial applications. Its parameters have been worked out from datasheets curves by drawing on the optimization method: Simulated Annealing (SA) for the SiC MPS diodes made available in the industry. The model also adopts the Analog Behavioral Model (ABM) of PSPICE in which it has been implemented. The thermal behavior of the devices was also taken into consideration by making use of Foster’ canonical network as figured out from electro-thermal measurement provided by the manufacturer of the device.

Keywords: SiC MPS Diode, electro-thermal, SPICE Model.

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Authors: Zubair Ahmad, Muhammad Hassan Sayyad

Abstract:

In this paper, fabrication and study of electronic properties of Au/methyl-red/Ag surface type Schottky diode by current-voltage (I-V) method has been reported. The I-V characteristics of the Schottky diode showed the good rectifying behavior. The values of ideality factor n and barrier height b of Au/methyl-red/Ag Schottky diode were calculated from the semi-log I-V characteristics and by using the Cheung functions. From semi-log current-voltage characteristics the values of n and b were found 1.93 and 0.254 eV, respectively, while by using Cheung functions their values were calculated 1.89 and 0.26 eV, respectively. The effect of series resistance was also analyzed by Cheung functions. The series resistance RS values were determined from dV/d(lnI)–I and H(I)–I graphs and were found to be 1.1 k and 1.3 k, respectively.

Keywords: Surface type Schottky diodes, Methyl-red, Currentvoltage method

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Authors: Chia-Jui Yu, Chien-Ju Chen, Jyun-Hao Liao, Chia-Ching Wu, Meng-Chyi Wu

Abstract:

In this letter, we demonstrate high-performance AlGaN/GaN planar Schottky barrier diodes (SBDs) on the silicon substrate with field plate structure for increasing breakdown voltage V_B. A low turn-on resistance R_ON (3.55 mΩ-cm²), low reverse leakage current (< 0.1 µA) at -100 V, and high reverse breakdown voltage V_B (> 1.1 kV) SBD has been fabricated. A virgin SBD exhibited a breakdown voltage (measured at 1 mA/mm) of 615 V, and with the field plate technology device exhibited a breakdown voltage (measured at 1 mA/mm) of 1525 V (the anode–cathode distance was L_AC = 40 µm). Devices without the field plate design exhibit a Baliga’s figure of merit of V_B²/ R_ON = 60.2 MW/cm², whereas devices with the field plate design show a Baliga’s figure of merit of V_B²/ R_ON = 340.9 MW/cm² (the anode–cathode distance was L_AC = 20 µm).

Keywords: AlGaN/GaN heterostructure, silicon substrate, Schottky barrier diode, high breakdown voltage, field plate, Baliga’s figure-of-merit.

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Authors: Gaurav Upadhyay, Nand Kishore, Prashant Ranjan, Shivesh Tripathi, V. S. Tripathi

Abstract:

In this paper, a patch antenna array design is proposed for vehicular communication. The antenna consists of 2-element patch array. The antenna array is operating at multiple frequency bands. The multiband operation is achieved by use of slots at proper locations at the patch. The array is made reconfigurable by use of two PIN-diodes. The antenna is simulated and measured in four states of diodes i.e. ON-ON, ON-OFF, OFF-ON, and OFF-OFF. In ON-ON state of diodes, the resonant frequencies are 4.62-4.96, 6.50-6.75, 6.90-7.01, 7.34-8.22, 8.89-9.09 GHz. In ON-OFF state of diodes, the measured resonant frequencies are 4.63-4.93, 6.50-6.70 and 7.81-7.91 GHz. In OFF-ON states of diodes the resonant frequencies are 1.24-1.46, 3.40-3.75, 5.07-5.25 and 6.90-7.20 GHz and in the OFF-OFF state of diodes 4.49-4.75 and 5.61-5.98 GHz. The maximum bandwidth of the proposed antenna is 16.29%. The peak gain of the antenna is 3.4 dB at 5.9 GHz, which makes it suitable for vehicular communication.

Keywords: Antenna, array, reconfigurable, vehicular.

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Authors: Somayeh Gholami, Meysam Khakbaz

Abstract:

The current-voltage characteristics of a PtSi/p-Si Schottky barrier diode was measured at the temperature of 85 K and from the forward bias region of the I-V curve, the electrical parameters of the diode were measured by three methods. The results obtained from the two methods which considered the series resistance were in close agreement with each other and from them barrier height (
), ideality factor (n) and series resistance () were found to be 0.2045 eV, 2.877 and 14.556 K
respectively. By measuring the I-V characteristics in the temperature range of 85-136 K the electrical parameters were observed to have strong dependency on temperature. The increase of barrier height and decrease of ideality factor with increasing temperature is attributed to the existence of barrier height inhomogeneities in the silicide-semiconductor structure.

Keywords: Schottky diode, barrier height, series resistance, I-V, barrier height inhomogeneities.

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Authors: Alexey V. Klyuev, Arkady V. Yakimov, Mikhail I. Ryzhkin, Andrey V. Klyuev

Abstract:

Fluctuations of Schottky diode parameters in a structure of the mixer are investigated. These fluctuations are manifested in two ways. At the first, they lead to fluctuations in the transfer factor that is lead to the amplitude fluctuations in the signal of intermediate frequency. On the basis of the measurement data of 1/f noise of the diode at forward current, the estimation of a spectrum of relative fluctuations in transfer factor of the mixer is executed. Current dependence of the spectrum of relative fluctuations in transfer factor of the mixer and dependence of the spectrum of relative fluctuations in transfer factor of the mixer on the amplitude of the heterodyne signal are investigated. At the second, fluctuations in parameters of the diode lead to occurrence of 1/f noise in the output signal of the mixer. This noise limits the sensitivity of the mixer to the value of received signal.

Keywords: Current-voltage characteristic, fluctuations, mixer, Schottky diode, 1/f noise.

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Authors: Shiyang Zhu, Guo-Qiang Lo, Dim-Lee Kwong

Abstract:

We prove detailed analysis of a waveguide-based Schottky barrier photodetector (SBPD) where a thin silicide film is put on the top of a silicon-on-insulator (SOI) channel waveguide to absorb light propagating along the waveguide. Taking both the confinement factor of light absorption and the wall scanning induced gain of the photoexcited carriers into account, an optimized silicide thickness is extracted to maximize the effective gain, thereby the responsivity. For typical lengths of the thin silicide film (10-20 Ðçm), the optimized thickness is estimated to be in the range of 1-2 nm, and only about 50-80% light power is absorbed to reach the maximum responsivity. Resonant waveguide-based SBPDs are proposed, which consist of a microloop, microdisc, or microring waveguide structure to allow light multiply propagating along the circular Si waveguide beneath the thin silicide film. Simulation results suggest that such resonant waveguide-based SBPDs have much higher repsonsivity at the resonant wavelengths as compared to the straight waveguidebased detectors. Some experimental results about Si waveguide-based SBPD are also reported.

Keywords: Infrared detector, Schottky-barrier, Silicon waveguide, Silicon photonics

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Authors: Alexey V. Klyuev, Arkady. V. Yakimov

Abstract:

The 1/f noise investigation in nanoscale light-emitting diodes and lasers, based on GaAs and alloys, is presented here. Leakage and additional (to recombination through quantum wells and/or dots) nonlinear currents were detected and it was shown that these currents are the main source of the 1/f noise in devices studied.

Keywords: Lasers, light-emitting diodes, quantum dots, quantum wells, 1/f noise.

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Authors: Chengjie Wang, Li Yin, Chuanmin Wang

Abstract:

This paper presents a physics-based model for the high-voltage fast recovery diodes. The model provides a good trade-off between reverse recovery time and forward voltage drop realized through a combination of lifetime control and emitter efficiency reduction techniques. The minority carrier lifetime can be extracted from the reverse recovery transient response and forward characteristics. This paper also shows that decreasing the amount of the excess carriers stored in the drift region will result in softer characteristics which can be achieved using a lower doping level. The developed model is verified by experiment and the measurement data agrees well with the model.

Keywords: Emitter efficiency, lifetime control, P-i-N diode, physics-based model

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Authors: Q. Zafar, R. Akram, Kh.S. Karimov, T.A. Khan, M. Farooq, M.M. Tahir

Abstract:

In this study we present the effect of elevated temperatures from 300K to 400K on the electrical properties of copper Phthalocyanine (CuPc) based organic field effect transistors (OFET). Thin films of organic semiconductor CuPc (40nm) and semitransparent Al (20nm) were deposited in sequence, by vacuum evaporation on a glass substrate with previously deposited Ag source and drain electrodes with a gap of 40 μm. Under resistive mode of operation, where gate was suspended it was observed that drain current of this organic field effect transistor (OFET) show an increase with temperature. While in grounded gate condition metal (aluminum) – semiconductor (Copper Phthalocyanine) Schottky junction dominated the output characteristics and device showed switching effect from low to high conduction states like Zener diode at higher bias voltages. This threshold voltage for switching effect has been found to be inversely proportional to temperature and shows an abrupt decrease after knee temperature of 360K. Change in dynamic resistance (Rd = dV/dI) with respect to temperature was observed to be -1%/K.

Keywords: Copper Phthalocyanine, Metal-Semiconductor Schottky Junction, Organic Field Effect Transistor, Switching effect, Temperature Sensor

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Authors: Yong-Taeg Oh, Won Song, Seok-Eui Choi, Bo-Ra Koo, Dong-Chan Shin

Abstract:

ZnO+Ga2O3 functionally graded thin films (FGTFs) were examined for their potential use as Solar cell and organic light emitting diodes (OLEDs). FGTF transparent conducting oxides (TCO) were fabricated by combinatorial RF magnetron sputtering. The composition gradient was controlled up to 10% by changing the plasma power of the two sputter guns. A Ga2O3+ZnO graded region was placed on the top layer of ZnO. The FGTFs showed up to 80% transmittance. Their surface resistances were reduced to < 10% by increasing the Ga2O3: pure ZnO ratio in the TCO. The FGTFs- work functions could be controlled within a range of 0.18 eV. The controlled work function is a very promising technology because it reduces the contact resistance between the anode and Hall transport layers of OLED and solar cell devices.

Keywords: Work Function, TCO, Functionally Graded Thin Films, Resistance, Transmittance.

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Authors: S. M. Thahab, H. Abu Hassan, Z. Hassan

Abstract:

The InAlGaN alloy has only recently began receiving serious attention into its growth and application. High quality InGaN films have led to the development of light emitting diodes (LEDs) and blue laser diodes (LDs). The quaternary InAlGaN however, represents a more versatile material since the bandgap and lattice constant can be independently varied. We report an ultraviolet (UV) quaternary InAlGaN multi-quantum wells (MQWs) LD study by using the simulation program of Integrated System Engineering (ISE TCAD). Advanced physical models of semiconductor properties were used in order to obtain an optimized structure. The device performance which is affected by piezoelectric and thermal effects was studied via drift-diffusion model for carrier transport, optical gain and loss. The optical performance of the UV LD with different numbers of quantum wells was numerically investigated. The main peak of the emission wavelength for double quantum wells (DQWs) was shifted from 358 to 355.8 nm when the forward current was increased. Preliminary simulated results indicated that better output performance and lower threshold current could be obtained when the quantum number is four, with output power of 130 mW and threshold current of 140 mA.

Keywords: Nitride semiconductors, InAlGaN quaternary, UVLD, numerical simulation.

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Authors: M. Daoudi, A. Belghachi, L. Varani

Abstract:

In this paper, we analyze the problem of quasiballistic electron transport in ultra small of mercury -cadmiumtelluride (Hg0.8Cd0.2Te -MCT) n+-n- n+ devices from hydrodynamic point view. From our study, we note that, when the size of the active layer is low than 0.1μm and for low bias application( ( ≥ 9mV), the quasi-ballistic transport has an important effect.

Keywords: Hg0.8Cd0.2Te semiconductor, Hydrodynamicmode, Quasi-ballistic transport, Submicron diode

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Authors: K. Karami, S. Hassan, S. Taking, A. Ofiare, A. Dhongde, A. Al-Khalidi, E. Wasige

Abstract:

We have made a comparative study on the influence of Al2O3 and HfO2 grown using Atomic Layer Deposition (ALD) technique as dielectric in the AlGaN/GaN metal oxide semiconductor high electron mobility transistor (MOS-HEMT) structure. Five samples consisting of 20 nm and 10 nm each of A2lO3 and HfO2 respectively and a Schottky gate HEMT, were fabricated and measured. The threshold voltage shifts towards negative by 0.1 V and 1.8 V for 10 nm thick HfO2 and 10 nm thick Al2O3 gate dielectric layers, respectively. The negative shift for the 20 nm HfO2 and 20 nm Al2O3 were 1.2 V and 4.9 V, respectively. Higher gm/IDS (transconductance to drain current) ratio was also obtained in HfO2 than Al2O3. With both materials as dielectric, a significant reduction in the gate leakage current in the order of 104 was obtained compared to the sample without the dielectric material.

Keywords: AlGaN/GaN HEMTs, Al2O3, HfO2, MOSHEMTs.

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Authors: Muhammad Tahir, Muhammad H. Sayyad, Dil N. Khan, Fazal Wahab

Abstract:

Herein, the organic semiconductor methyl orange (MO), is investigated for the first time for its electronic applications. For this purpose, Al/MO/n-Si heterojunction is fabricated through economical cheap and simple “drop casting” technique. The currentvoltage (I-V) measurements of the device are made at room temperature under dark conditions. The I-V characteristics of Al/MO/n-Si junction exhibits asymmetrical and rectifying behavior that confirms the formation of diode. The diode parameters such as rectification ratio (RR), turn on voltage (Vturn on), reverse saturation current (I0), ideality factor (n), barrier height ( b f ), series resistance (Rs) and shunt resistance (Rsh) are determined from I-V curves using Schottky equations. These values of these parameters are also extracted and verified by applying Cheung’s functions. The conduction mechanisms are explained from the forward bias I-V characteristics using the power law.

Keywords: Electrical properties, Organic/inorganic heterojunction diode, Methyl Orange, Cheungs Functions

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Authors: Y. Kobori, L. Xing, H. Gao, N.Onozawa, S. Wu, S. N. Mohyar, Z. Nosker, H. Kobayashi, N. Takai, K. Niitsu

Abstract:

This paper proposes two types of non-isolated direct AC-DC converters. First, it shows a buck-boost converter with an H-bridge, which requires few components (three switches, two diodes, one inductor and one capacitor) to convert AC input to DC output directly. This circuit can handle a wide range of output voltage. Second, a direct AC-DC buck converter is proposed for lower output voltage applications. This circuit is analyzed with output voltage of 12V. We describe circuit topologies, operation principles and simulation results for both circuits.

Keywords: AC-DC converter, Buck-boost converter, Buck converter, PFC, BCM PFC circuit.

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Authors: Saba Zare Zardareh, Farhad Akbari Boroumand

Abstract:

The objective is to fabricate organic light emitting diode and to study its degradation process in atmosphere condition in which PFO as an emitting material and PEDOT:PSS as a hole injecting material were used on ITO substrate. Thus degradation process of the OLED was studied upon its current-voltage characteristic. By fabricating this OLED and obtaining blue light and analysis of current-voltage characteristic during the time after fabrication, it was observed that the current of the OLED was exponentially decreased. Current reduction during the initial hours of fabrication was outstanding and after few days its reduction rate was dropped significantly, while the diode was dying.

Keywords: OLED, Degradation, Dark spot.

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Authors: M. Y. Ismail, M. Inam

Abstract:

This paper presents equivalent circuit modeling of active planar reflectors which can be used for the detailed analysis and characterization of reflector performance in terms of lumped components. Equivalent circuit representation has been proposed for PIN diodes and liquid crystal based active planar reflectors designed within X-band frequency range. A very close agreement has been demonstrated between equivalent circuit results, 3D EM simulated results as well as measured scattering parameter results. In the case of measured results, a maximum discrepancy of 1.05dB was observed in the reflection loss performance, which can be attributed to the losses occurred during measurement process.

Keywords: Equivalent circuit modelling, planar reflectors, reflectarray antenna, PIN diode, liquid crystal.

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Authors: J. Y. Woo, J. Lee, N. Kim, C.-S. Han

Abstract:

This paper reports on the enhanced photoluminescence (PL) of nanocomposites through the layered structuring of phosphor and quantum dot (QD). Green phosphor of Sr2SiO4:Eu, red QDs of CdSe/CdS/CdZnS/ZnS core-multishell, and thermo-curable resin were used for this study. Two kinds of composite (layered and mixed) were prepared, and the schemes for optical energy transfer between QD and phosphor were suggested and investigated based on PL decay characteristics. It was found that the layered structure is more effective than the mixed one in the respects of PL intensity, PL decay and thermal loss. When this layered nanocomposite (QDs on phosphor) is used to make white light emitting diode (LED), the brightness is increased by 37 %, and the color rendering index (CRI) value is raised to 88.4 compared to the mixed case of 80.4.

Keywords: Quantum Dot, Nanocomposites, Photoluminescence, Light Emitting Diode

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Authors: İsmail Aksoy, Hacı Bodur, Nihan Altıntas

Abstract:

This paper introduces a boost converter with a new active snubber cell. In this circuit, all of the semiconductor components in the converter softly turns on and turns off with the help of the active snubber cell. Compared to the other converters, the proposed converter has advantages of size, number of components and cost. The main feature of proposed converter is that the extra voltage stresses do not occur on the main switches and main diodes. Also, the current stress on the main switch is acceptable level. Moreover, the proposed converter can operates under light load conditions and wide input line voltage. In this study, the operating principle of the proposed converter is presented and its operation is verified with the Proteus simulation software for a 1 kW and 100 kHz model.

Keywords: Active snubber cell, boost converter, zero current switching, zero voltage switching.

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Authors: S. M. Thahab, H. Abu Hassan, Z. Hassan

Abstract:

The optical properties of InGaN/GaN laser diode based on quaternary alloys stopper and superlattice layers are numerically studied using ISE TCAD (Integrated System Engineering) simulation program. Improvements in laser optical performance have been achieved using quaternary alloy as superlattice layers in InGaN/GaN laser diodes. Lower threshold current of 18 mA and higher output power and slope efficiency of 22 mW and 1.6 W/A, respectively, at room temperature have been obtained. The laser structure with InAlGaN quaternary alloys as an electron blocking layer was found to provide better laser performance compared with the ternary AlxGa1-xN blocking layer.

Keywords: Nitride semiconductors, InAlGaN quaternary, laserdiode, superlattice.

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Authors: Moustafa Ahmed, Ahmed Bakry, Safwat W. Z. Mahmoud

Abstract:

We model and simulate the combined effect of fiber dispersion and frequency chirp of a directly modulated high-speed laser diode on the figures of merit of a non-amplified 40-Gbps optical fiber link. We consider both the return to zero (RZ) and non-return to zero (NRZ) patterns of the pseudorandom modulation bits. The performance of the fiber communication system is assessed by the fiber-length limitation due to the fiber dispersion. We study the influence of replacing standard single-mode fibers by non-zero dispersion-shifted fibers on the maximum fiber length and evaluate the associated power penalty. We introduce new dispersion tolerances for 1-dB power penalty of the RZ and NRZ 40-Gbps optical fiber links.

Keywords: Bit error rate, dispersion, frequency chirp, fiber communications, semiconductor laser.

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Authors: Taegyoo Woo, Jong Kang Park, Jong Tae Kim

Abstract:

Visible Light Communication (VLC) provides wireless communication features in illumination systems. One of the key applications is to recognize the user location by indoor illuminators such as light emitting diodes. For localization of individual receivers in these systems, we usually assume that receivers and transmitters are placed in parallel. However, it is difficult to satisfy this assumption because the receivers move randomly in real case. It is necessary to analyze the case when transmitter is not placed perfectly parallel to receiver. It is also important to identify changes on optical gain by the tilted angles and distances of them against the illuminators. In this paper, we simulate optical gain for various cases where the tilt of the receiver and the distance change. Then, we identified changing patterns of optical gains according to tilted angles of a receiver and distance. These results can help many VLC applications understand the extent of the location errors with regard to optical gains of the receivers and identify the root cause.

Keywords: Visible light communication, optical channel, indoor positioning, Lambertian radiation.

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Authors: Shahzad Hassan, Kamran Saeed

Abstract:

People are always in search of Wi-Fi hotspots because Internet is a major demand nowadays. But like all other technologies, there is still room for improvement in the Wi-Fi technology with regards to the speed and quality of connectivity. In order to address these aspects, Harald Haas, a professor at the University of Edinburgh, proposed what we know as the Li-Fi (Light Fidelity). Li-Fi is a new technology in the field of wireless communication to provide connectivity within a network environment. It is a two-way mode of wireless communication using light. Basically, the data is transmitted through Light Emitting Diodes which can vary the intensity of light very fast, even faster than the blink of an eye. From the research and experiments conducted so far, it can be said that Li-Fi can increase the speed and reliability of the transfer of data. This paper pays particular attention on the assessment of the performance of this technology. In other words, it is a 5G technology which uses LED as the medium of data transfer. For coverage within the buildings, Wi-Fi is good but Li-Fi can be considered favorable in situations where large amounts of data are to be transferred in areas with electromagnetic interferences. It brings a lot of data related qualities such as efficiency, security as well as large throughputs to the table of wireless communication. All in all, it can be said that Li-Fi is going to be a future phenomenon where the presence of light will mean access to the Internet as well as speedy data transfer.

Keywords: Communication, LED, Li-Fi, Wi-Fi.

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Authors: Juan F. Gutierrez, Jesus M. Quintero, Diego Sandoval

Abstract:

An important feature of Lighting Emitting Diodes (LED) technology is the fast on-off commutation. This fact allows data transmission using modulation formats such as On-Off Keying (OOK) and Color Shift Keying (CSK). Since, CSK based on three color bands uses red, green, and blue monochromatic LED (RGB-LED) to define a pattern of chromaticities; this type of CSK provides poor color quality on the illuminated area. In this work, we present the design and implementation of a VLC system using RGB-based CSK with 16, 8, and 4 color points, mixing with a steady baseline of a phosphor white-LED, to improve the color quality of the LED-Fixture. The experimental system was assessed in terms of the Symbol Error Rate (SER) and the Color Rendering Index (CRI). Good color quality performance of the LED-Fixture was obtained with an acceptable SER. We describe the laboratory setup used to characterize and calibrate an LED-Fixture.

Keywords: Color rendering index, symbol error rate, color shift keying, visible light communications.

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Authors: Ahmad Al-Omari, Osama Khreis, Ahmad M. K. Dagamseh, Abdullah Ababneh, Kevin Lear

Abstract:

High-speed infrared vertical-cavity surface-emitting laser diodes (VCSELs) with Cu-plated heat sinks were fabricated and tested. VCSELs with 10 mm aperture diameter and 4 mm of electroplated copper demonstrated a -3dB modulation bandwidth (f_-3dB) of 14 GHz and a resonance frequency (f_R) of 9.5 GHz at a bias current density (J_bias) of only 4.3 kA/cm², which corresponds to an improved f_-3dB²/J_bias ratio of 44 GHz²/kA/cm². At higher and lower bias current densities, the f_-3dB²/ J_bias ratio decreased to about 30 GHz²/kA/cm² and 18 GHz²/kA/cm², respectively. Examination of the analogue modulation response demonstrated that the presented VCSELs displayed a steady f_-3dB/ f_R ratio of 1.41±10% over the whole range of the bias current (1.3I_th to 6.2I_th). The devices also demonstrated a maximum modulation bandwidth (f_{-3dB max}) of more than 16 GHz at a bias current less than the industrial bias current standard for reliability by 25%.

Keywords: Current density, High-speed VCSELs, Modulation bandwidth, Small-Signal Characteristics, Thermal impedance, Vertical-cavity surface-emitting lasers.

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Authors: R. Ramaprabha

Abstract:

This paper presents an extraction of maximum energy from Solar Photovoltaic Array (SPVA) under partial shaded conditions by optimum selection of array size using Particle Swarm Optimization (PSO) technique. In this paper a detailed study on the output reduction of different SPVA configurations under partial shaded conditions have been carried out. A generalized MATLAB M-code based software model has been used for any required array size, configuration, shading patterns and number of bypass diodes. Comparative study has been carried out on different configurations by testing several shading scenarios. While the number of shading patterns and the rate of change are very low for stationary SPVA but these may be quite large for SPVA mounted on a mobile platforms. This paper presents the suitability of PSO technique to select optimum configuration for mobile arrays by calculating the global peak (GP) of different configurations and to transfer maximum power to the load.

Keywords: Global peak, Mobile PV arrays, Partial shading, optimization, PSO.

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Authors: Mohammad Seifi, Azura Bt. Che Soh, Noor Izzrib. Abd. Wahab, Mohd Khair B. Hassan

Abstract:

Solar energy has a major role in renewable energy resources. Solar Cell as a basement of solar system has attracted lots of research. To conduct a study about solar energy system, an authenticated model is required. Diode base PV models are widely used by researchers. These models are classified based on the number of diodes used in them. Single and two-diode models are well studied. Single-diode models may have two, three or four elements. In this study, these solar cell models are examined and the simulation results are compared to each other. All PV models are re-designed in the Matlab/Simulink software and they examined by certain test conditions and parameters. This paper provides comparative studies of these models and it tries to compare the simulation results with manufacturer-s data sheet to investigate model validity and accuracy. The results show a four- element single-diode model is accurate and has moderate complexity in contrast to the two-diode model with higher complexity and accuracy

Keywords: Fill Factor (FF), Matlab/Simulink, Maximum PowerPoint (MPP), Maximum Power Point Tracker (MPPT), Photo Voltaic(PV), Solar cell, Standard Test Condition (STC).

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