@article{(Open Science Index):https://publications.waset.org/pdf/10000198,
	  title     = {Characterization of the In0.53Ga0.47As n+nn+ Photodetectors},
	  author    = {Fatima Zohra Mahi and  Luca Varani},
	  country	= {},
	  institution	= {},
	  abstract     = {We present an analytical model for the calculation of
the sensitivity, the spectral current noise and the detective parameter
for an optically illuminated In0.53Ga0.47As n+nn+ diode. The
photocurrent due to the excess carrier is obtained by solving the
continuity equation. Moreover, the current noise level is evaluated at
room temperature and under a constant voltage applied between the
diode terminals. The analytical calculation of the current noise in the
n+nn+ structure is developed by considering the free carries
fluctuations. The responsivity and the detection parameter are
discussed as functions of the doping concentrations and the emitter
layer thickness in one-dimensional homogeneous n+nn+ structure.
},
	    journal   = {International Journal of Physical and Mathematical Sciences},
	  volume    = {8},
	  number    = {12},
	  year      = {2014},
	  pages     = {1470 - 1474},
	  ee        = {https://publications.waset.org/pdf/10000198},
	  url   	= {https://publications.waset.org/vol/96},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 96, 2014},
	}