@article{(Open Science Index):https://publications.waset.org/pdf/10000198, title = {Characterization of the In0.53Ga0.47As n+nn+ Photodetectors}, author = {Fatima Zohra Mahi and Luca Varani}, country = {}, institution = {}, abstract = {We present an analytical model for the calculation of the sensitivity, the spectral current noise and the detective parameter for an optically illuminated In0.53Ga0.47As n+nn+ diode. The photocurrent due to the excess carrier is obtained by solving the continuity equation. Moreover, the current noise level is evaluated at room temperature and under a constant voltage applied between the diode terminals. The analytical calculation of the current noise in the n+nn+ structure is developed by considering the free carries fluctuations. The responsivity and the detection parameter are discussed as functions of the doping concentrations and the emitter layer thickness in one-dimensional homogeneous n+nn+ structure. }, journal = {International Journal of Physical and Mathematical Sciences}, volume = {8}, number = {12}, year = {2014}, pages = {1470 - 1474}, ee = {https://publications.waset.org/pdf/10000198}, url = {https://publications.waset.org/vol/96}, bibsource = {https://publications.waset.org/}, issn = {eISSN: 1307-6892}, publisher = {World Academy of Science, Engineering and Technology}, index = {Open Science Index 96, 2014}, }