@article{(Open Science Index):https://publications.waset.org/pdf/10002596,
	  title     = {Temperature-Dependent Barrier Characteristics of Inhomogeneous Pd/n-GaN Schottky Barrier Diodes Surface},
	  author    = {K. Al-Heuseen and  M. R. Hashim},
	  country	= {},
	  institution	= {},
	  abstract     = {The current-voltage (I-V) characteristics of Pd/n-GaN Schottky barrier were studied at temperatures over room temperature (300-470K). The values of ideality factor (n), zero-bias barrier height (φB0), flat barrier height (φBF) and series resistance (Rs) obtained from I-V-T measurements were found to be strongly temperature dependent while (φBo) increase, (n), (φBF) and (Rs) decrease with increasing temperature. The apparent Richardson constant was found to be 2.1x10-9 Acm-2K-2 and mean barrier height of 0.19 eV. After barrier height inhomogeneities correction, by assuming a Gaussian distribution (GD) of the barrier heights, the Richardson constant and the mean barrier height were obtained as 23 Acm-2K-2 and 1.78eV, respectively. The corrected Richardson constant was very closer to theoretical value of 26 Acm-2K-2. 
},
	    journal   = {International Journal of Physical and Mathematical Sciences},
	  volume    = {8},
	  number    = {3},
	  year      = {2014},
	  pages     = {633 - 637},
	  ee        = {https://publications.waset.org/pdf/10002596},
	  url   	= {https://publications.waset.org/vol/87},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 87, 2014},
	}