Fabrication and Characterization of Al/Methyl Orange/n-Si Heterojunction Diode

Authors: Muhammad Tahir, Muhammad H. Sayyad, Dil N. Khan, Fazal Wahab

Abstract:

Herein, the organic semiconductor methyl orange (MO), is investigated for the first time for its electronic applications. For this purpose, Al/MO/n-Si heterojunction is fabricated through economical cheap and simple “drop casting” technique. The currentvoltage (I-V) measurements of the device are made at room temperature under dark conditions. The I-V characteristics of Al/MO/n-Si junction exhibits asymmetrical and rectifying behavior that confirms the formation of diode. The diode parameters such as rectification ratio (RR), turn on voltage (Vturn on), reverse saturation current (I0), ideality factor (n), barrier height ( b f ), series resistance (Rs) and shunt resistance (Rsh) are determined from I-V curves using Schottky equations. These values of these parameters are also extracted and verified by applying Cheung’s functions. The conduction mechanisms are explained from the forward bias I-V characteristics using the power law.

Keywords: Electrical properties, Organic/inorganic heterojunction diode, Methyl Orange, Cheungs Functions

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1057243

References:

[1] Z. Ahmad, and M. H. Sayyad, "Extraction of electronic parameters of Schottky diode based on an organic semiconductor methyl-red," Phys. E. vol. 41, pp. 631-634, Feb. 2009.
[2] F. Yakuphanoglu, "Determination of electronic properties of Al/p- Si/composite organic semiconductor (MIOS) junction barrier by current-voltage and capacitance-voltage methods," Synth. Met. vol. 158, pp. 108-112, 2008.
[3] M. H. Sayyad, Muhammad Saleem, Khasan S. Karimov, Muhammad Yaseen, Mukhtar Ali, Kuan Y. Cheong, and Ahmad F. Mohd Noor, "Synthesis of Zn(II) 5,10,15,20-tetrakis(4ÔÇ▓-isopropylphenyl) porphyrin and its use as a thin film sensor," Appl. Phys. A. vol. 98, pp. 103-109, 2010.
[4] C. J. Brabec, and V. Dyakonov, "Organic Photovoltaics Concepts and Realization," (Springer) 2003.
[5] K. S. Karimov, Ibrahim Qazi, M. Mahroof Tahir, Tauseef Ahmed Khan, and Umar Shafique, "Photo Organic Field Effect Transistor-s Properties," Turk. J. Phys. vol. 32, pp. 13-19, 2008.
[6] M. H. Sayyad, Zubair Ahmad, Kh. S. Karimov, Muhammad Yaseen, and Mukhtar Ali, "Photo organic field effect transistor based on a metallo-porphyrin," J. Phys. D. Appl. Phys. vol. 42, pp. 105-112, 2009.
[7] C. X. Qiang, Wei Wan-yin, Wu You-yu, Dong Mao-jun, and Zhang Fu- Jia, "Fabrication of a white organic light-emitting device with single liq:rubrence luminescent layer," Optoelectron. Lett. vol. 4, pp. 126-129, 2008.
[8] Anatoliy N. Sokolov, Mark E. Roberts, and Zhenan Bao, "Fabrication of low-cost electronic biosensors," Mater. Today. vol. 12, pp. 12-20, 2009.
[9] R. K. Gupta, and R. A. Singh, "Schottky diode based on composite organic semiconductors," Mater. Sci. in Semicond. Process. vol. 7, pp. 83-87, 2004.
[10] O. Gullu, S. Aydo─ƒana, and A. T├╝r├╝t, "Fabrication and electrical characteristics of Schottky diode based on organic material," Microelectron. Eng. 85, pp. 1647-1651, 2008.
[11] T. K─▒l─▒coglu, "Effect of an organic compound (Methyl Red) interfacial layer on the calculation of characteristic parameters of an Al/Methyl Red/p-Si sandwich Schottky barrier diode," Thin Solid Films. vol. 516,
[12] M. Cakar, Cabir Temirci, and Abdulmecit T├╝r├╝t, "Determination of the Density Distribution of Interface States from High- and Low-Frequency Capacitance Characteristics of the Tin/Organic Pyronine-B/p-type Silicon Structure," Chem. Phys. Chem. vol. 3, pp. 701-704, 2002.
[13] E. H. Rhoderick, and R.H. Williams Metal Semiconductor Contacts, second ed. (Oxford, Clarendon) 1988.
[14] S. M. Sze Physics of Semiconductor Devices, Second ed. (Jon Wiley & Sons, Inc.) 1981.
[15] S. S. Islam Smiconductor Physics and Devices, (Oxford University Press, New Delhi) 2006.
[16] C. R. Crowell, and S. M. Sze, "Current transport in metalsemiconductor barriers," Solid-State Electron.vol. 9, pp. 1035-1048, 1966.
[17] K. Akk─▒l─▒c, lhan Uzunb, and Tahsin K─▒l─▒coglu, "The calculation of electronic properties of an Ag/chitosan/n-Si Schottky barrier diode," Synth. Met.vol. 157, pp. 297-302, 2007.
[18] S. A. E. Ugurel, K. Serifoglu, and A. Turut, "Effect of 6 MeV electron irradiation on electrical characteristics of Au/n-Si/Al Schottky diode," Microelectron. Eng. vol. 85, pp. 2299-2303, 2008.
[19] S. K. Cheung, and N. W. Cheung, "Extraction of Schottky diode parameters from forward current-voltage characteristics," Appl. Phys. Lett. vol. 49, pp. 85-87, 1986.