%0 Journal Article
	%A Fatima Zohra Mahi and  Luca Varani
	%D 2014
	%J International Journal of Physical and Mathematical Sciences
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 96, 2014
	%T Characterization of the In0.53Ga0.47As n+nn+ Photodetectors
	%U https://publications.waset.org/pdf/10000198
	%V 96
	%X We present an analytical model for the calculation of
the sensitivity, the spectral current noise and the detective parameter
for an optically illuminated In0.53Ga0.47As n+nn+ diode. The
photocurrent due to the excess carrier is obtained by solving the
continuity equation. Moreover, the current noise level is evaluated at
room temperature and under a constant voltage applied between the
diode terminals. The analytical calculation of the current noise in the
n+nn+ structure is developed by considering the free carries
fluctuations. The responsivity and the detection parameter are
discussed as functions of the doping concentrations and the emitter
layer thickness in one-dimensional homogeneous n+nn+ structure.

	%P 1470 - 1474