New Design of a Broadband Microwave Zero Bias Power Limiter
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 33122
New Design of a Broadband Microwave Zero Bias Power Limiter

Authors: K. Echchakhaoui, E. Abdelmounim, J. Zbitou, H. Bennis, N. Ababssi, M. Latrach

Abstract:

In this paper a new design of a broadband microwave power limiter is presented and validated into simulation by using ADS software (Advanced Design System) from Agilent technologies. The final circuit is built on microstrip lines by using identical Zero Bias Schottky diodes. The power limiter is designed by Associating 3 stages Schottky diodes. The obtained simulation results permit to validate this circuit with a threshold input power level of 0 dBm until a maximum input power of 30 dBm.

Keywords: Limiter, microstrip, zero-biais.

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1337996

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 3792

References:


[1] D. Shiffler, T.K. Statom, T.W. Hussey, O.Zhou, P. Mardahl, “High power microwave source”, in Modern Microwave and MillimeterWave Power Electronics, pp. 691-730, 2005,Wiley Interscience.
[2] Leo G. Maloratsky, “Passive RF&Microwave integrated circuits”, Newnes, 2004, Elsevier Inc
[3] B. M. Coaker, ‘Radar receiver protection technology,’ Microwave Journal: Military Microwaves Suppliment, August 2007, pp. 8-14.
[4] B. M. Coaker, D. M. Dowthwaite and N. E. Priestley, ‘High-Power multi-function radar receiver protection,’ Proc. European Radar Conference, (EuRAD), Manchester, September 2006.
[5] V. V. Volkov, V. P. Ivanova, Yu. S. Kuz’michev, Yu. V. Solov’ev, “Design and technology of monolithic GaAs p–i–n diode limiters for the millimeter wavelength range” Technical Physics Letter Vol. 31 No. 7, 2005.
[6] D. J. Seymour, D. D. Heston, and R. E. Lehmann “X-Band and Ka-Band monolithic GaAS PIN diode variable attenuation limiters” 1988 IEEE MTT-S Digest.
[7] N. Roberts, ‘A Review of Solid-State radar receiver protection devices,’ Microwave Journal, Vol. 34, No. 2, February 1991, pp. 121–125.
[8] Nikolai V. Drozdovski & Lioudmila M. Drozdovskaia “Microstrip and waveguide passive power limiters whith simplified construction”, Journal of Microwaves and Optoelectronics, Vol. 1, No. 5, December 1999.
[9] Bahl I.J., “10W CW broadband balanced limiter/LNA fabricated using MSAG MESFET process”, International Journal of RF and Microwave Computer-Aided Engineering, vol. 13, Issue 2, pp. 118–127, March 2003.
[10] Nikolai V. Drozdovski “Microwave passive power limiters based on MESFETs”, Journal of Microwaves and Optoelectronics, Vol. 1, No. 2, April 1998.
[11] Sandeep Chaturvedi, G. Sai Saravanan, Mahadeva Bhat K., Sangam Bhalke "MESFET process based planar Schottky diode and its application to passive power limiters" 978-1-4799-2501-8/13/$31.00 ©2013 IEEE.
[12] Bera, S., Basak, K., Jain, V., Singh, R., and Garg, V.: ‘Schottky diode based microwave limiter with adjustable threshold power level’, Microw. Opt. Technol. Lett., 2010, 52, pp. 1671–1673.
[13] J.Zbitou and M. Latrach, S. Toutain “Wide band rectenna with high sensitivity detection” Proc. Of the 4th Int. conf. on Solar Power from Space- SPS’04, together with the 5th Int. Conf. on Wireless Power transmission- WPT 5,30 June-2 July 2004, Granada, Spain (ESA SP-567, December 2004).
[14] Data Sheet of Schottky diode HSMS-282x “Surface mount RF Schottky barrier diodes”, Avago Technologies.