Zubair Ahmad and Muhammad Hassan Sayyad
Investigation of the Electronic Properties of AumethylredAg Surface type Schottky Diode by CurrentVoltage Method
122 - 124
2008
2
7
International Journal of Chemical and Molecular Engineering
https://publications.waset.org/pdf/11801
https://publications.waset.org/vol/19
World Academy of Science, Engineering and Technology
In this paper, fabrication and study of electronic properties of AumethylredAg surface type Schottky diode by currentvoltage (IV) method has been reported. The IV characteristics of the Schottky diode showed the good rectifying behavior. The values of ideality factor n and barrier height b of AumethylredAg Schottky diode were calculated from the semilog IV characteristics and by using the Cheung functions. From semilog currentvoltage characteristics the values of n and b were found 1.93 and 0.254 eV, respectively, while by using Cheung functions their values were calculated 1.89 and 0.26 eV, respectively. The effect of series resistance was also analyzed by Cheung functions. The series resistance RS values were determined from dVd(lnI)–I and H(I)–I graphs and were found to be 1.1 k and 1.3 k, respectively.
Open Science Index 19, 2008