Search results for: Field Programmable gate array (FPGA)

Authors: Fatemeh Karimi, Morteza Fathipour, Hamdam Ghanatian, Vala Fathipour

Abstract:

In this paper electrical characteristics of various kinds of multiple-gate silicon nanowire transistors (SNWT) with the channel length equal to 7 nm are compared. A fully ballistic quantum mechanical transport approach based on NEGF was employed to analyses electrical characteristics of rectangular and cylindrical silicon nanowire transistors as well as a Double gate MOS FET. A double gate, triple gate, and gate all around nano wires were studied to investigate the impact of increasing the number of gates on the control of the short channel effect which is important in nanoscale devices. Also in the case of triple gate rectangular SNWT inserting extra gates on the bottom of device can improve the application of device. The results indicate that by using gate all around structures short channel effects such as DIBL, subthreshold swing and delay reduces.

Keywords: SNWT (silicon nanowire transistor), non equilibriumGreen's function (NEGF), double gate (DG), triple gate (TG), multiple gate, cylindrical nano wire (CW), rectangular nano wire(RW), Poisson_ Schrödinger solver, drain induced barrier lowering(DIBL).

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Authors: Amira Abbes Kheriji, Faouzi Bouani, Mekki Ksouri, Mohamed Ben Ahmed

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Model Predictive Control (MPC) is increasingly being proposed for real time applications and embedded systems. However comparing to PID controller, the implementation of the MPC in miniaturized devices like Field Programmable Gate Arrays (FPGA) and microcontrollers has historically been very small scale due to its complexity in implementation and its computation time requirement. At the same time, such embedded technologies have become an enabler for future manufacturing enterprises as well as a transformer of organizations and markets. Recently, advances in microelectronics and software allow such technique to be implemented in embedded systems. In this work, we take advantage of these recent advances in this area in the deployment of one of the most studied and applied control technique in the industrial engineering. In fact in this paper, we propose an efficient framework for implementation of Generalized Predictive Control (GPC) in the performed STM32 microcontroller. The STM32 keil starter kit based on a JTAG interface and the STM32 board was used to implement the proposed GPC firmware. Besides the GPC, the PID anti windup algorithm was also implemented using Keil development tools designed for ARM processor-based microcontroller devices and working with C/Cµ langage. A performances comparison study was done between both firmwares. This performances study show good execution speed and low computational burden. These results encourage to develop simple predictive algorithms to be programmed in industrial standard hardware. The main features of the proposed framework are illustrated through two examples and compared with the anti windup PID controller.

Keywords: Embedded systems, Model Predictive Control, microcontroller, Keil tool.

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Authors: Yu Ren Lin, Yi Feng Su

Abstract:

Using vision based solution in intelligent vehicle application often needs large memory to handle video stream and image process which increase complexity of hardware and software. In this paper, we present a FPGA implement of a vision based lane departure warning system. By taking frame of videos, the line gradient of line is estimated and the lane marks are found. By analysis the position of lane mark, departure of vehicle will be detected in time. This idea has been implemented in Xilinx Spartan6 FPGA. The lane departure warning system used 39% logic resources and no memory of the device. The average availability is 92.5%. The frame rate is more than 30 frames per second (fps).

Keywords: Lane departure warning system, image, FPGA.

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Authors: Pujarini Ghosh A, Rishu Chaujar B, Subhasis Haldar C, R.S Gupta D, Mridula Gupta E

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In this paper, an analytical modeling is presentated to describe the channel noise in GME SGT/CGT MOSFET, based on explicit functions of MOSFETs geometry and biasing conditions for all channel length down to deep submicron and is verified with the experimental data. Results shows the impact of various parameters such as gate bias, drain bias, channel length ,device diameter and gate material work function difference on drain current noise spectral density of the device reflecting its applicability for circuit design applications.

Keywords: Cylindrical/Surrounded gate (SGT/CGT) MOSFET, Gate Material Engineering (GME), Spectral Noise and short channeleffect (SCE).

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Authors: Porag Jyoti Ligira, Gargi Khanna

Abstract:

The paper presents a simulation study of the electrical characteristic of Bulk Planar Junctionless Transistor (BPJLT) using spacer. The BPJLT is a transistor without any PN junctions in the vertical direction. It is a gate controlled variable resistor. The characteristics of BPJLT are analyzed by varying the oxide material under the gate. It can be shown from the simulation that an ideal subthreshold slope of ~60 mV/decade can be achieved by using highk dielectric. The effects of variation of spacer length and material on the electrical characteristic of BPJLT are also investigated in the paper. The ION / IOFF ratio improvement is of the order of 107 and the OFF current reduction of 10-4 is obtained by using gate dielectric of HfO2 instead of SiO2.

Keywords: BPJLT, double gate, high-k, spacer.

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Authors: Dawit Burusie Abdi, Mamidala Jagadesh Kumar

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In this paper, using 2D TCAD simulations, the application of a dual material gate (DMG) for suppressing ambipolar conduction in a tunnel field effect transistor (TFET) is demonstrated. Using the proposed DMG concept, the ambipolar conduction can be effectively suppressed even if the drain doping is as high as that of the source doping. Achieving this symmetrical doping, without the ambipolar conduction in TFETs, gives the advantage of realizing both n-type and p-type devices with the same doping sequences. Furthermore, the output characteristics of the DMG TFET exhibit a good saturation when compared to that of the gate-drain underlap approach. This improved behavior of the DMG TFET makes it a good candidate for inverter based logic circuits.

Keywords: Dual material gate, suppressing ambipolar current, symmetrically doped TFET, tunnel FETs, PNPN TFET.

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Authors: Muhammad Saiful Fadhil Reyhan, Yusnita Rahayu, Fadhel Muhammadsyah

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This paper proposed a design of 16 elements, 8x2 linear fed patch antenna array with 16 ports, for 28 GHz, mm-wave band 5G for base station. The phased array covers along the azimuth plane to provide the coverage to the users in omnidirectional. The proposed antenna is designed RT Duroid 5880 substrate with the overall size of 85x35.6x0.787 mm³. The array is operating from 27.43 GHz to 28.34 GHz with a 910 MHz impedance bandwidth. The gain of the array is 18.3 dB, while the suppression of the side lobes is -1.0 dB. The main lobe direction of the array is 15 deg. The array shows a high array gain throughout the impedance bandwidth with overall of VSWR is below 1.12. The design will be proposed in single element and 16 elements antenna.

Keywords: 5G antenna, 28 GHz, MIMO, omnidirectional, phased array, base station, broadband.

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Authors: Sangeeta Singh, Pankaj Kumar, P. N. Kondekar

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In this paper, the transient device performance analysis of n-type Gate Inside JunctionLess Transistor (GI-JLT) has been evaluated. 3-D Bohm Quantum Potential (BQP) transport device simulation has been used to evaluate the delay and power dissipation performance. GI-JLT has a number of desirable device parameters such as reduced propagation delay, dynamic power dissipation, power and delay product, intrinsic gate delay and energy delay product as compared to Gate-all-around transistors GAA-JLT. In addition to this, various other device performance parameters namely, on/off current ratio, short channel effects (SCE), transconductance Generation Factor (TGF) and unity gain cut-off frequency (fT ) and subthreshold slope (SS) of the GI-JLT and GAA-JLT have been analyzed and compared. GI-JLT shows better device performance characteristics than GAA-JLT for low power and high frequency applications, because of its larger gate electrostatic control on the device operation.

Keywords: Gate-inside junctionless transistor GI-JLT, Gate-all-around junctionless transistor GAA-JLT, propagation delay, power delay product.

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Authors: Rawad Asfour, Salam Khamas, Edward A. Ball

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This paper is focused on the design of an mm-wave phased array. To date, linear polarization is adapted in the reported designs of phased arrays. However, linear polarization faces several well-known challenges. As such, an advanced design for phased array antennas is required that offers circularly polarized (CP) radiation. A feasible solution for achieving CP phased array antennas is proposed using open-circular loop antennas. To this end, a 3-element circular loop phased array antenna is designed to operate at 28 GHz. In addition, the array ability to control the direction of the main lobe is investigated. The results show that the highest achievable field of view (FOV) is 100°, i.e. 50° to the left and 50° to the right-hand side directions. The results are achieved with a CP bandwidth of 15%. Furthermore, the results demonstrate that a high broadside gain of circa 11 dBi can be achieved for the steered beam. Besides, radiation efficiency of 97% can also be achieved based on the proposed design.

Keywords: loop antenna, phased array, beam steering, wide bandwidth, circular polarization, CST

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Authors: Muhibul Haque Bhuyan

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This paper reports on the impact study with the variation of the gate insulation material and thickness on different models of pocket implanted sub-100 nm n-MOS device. The gate materials used here are silicon dioxide (SiO₂), aluminum silicate (Al₂SiO₅), silicon nitride (Si₃N₄), alumina (Al₂O₃), hafnium silicate (HfSiO₄), tantalum pentoxide (Ta₂O₅), hafnium dioxide (HfO₂), zirconium dioxide (ZrO₂), and lanthanum oxide (La₂O₃) upon a p-type silicon substrate material. The gate insulation thickness was varied from 2.0 nm to 3.5 nm for a 50 nm channel length pocket implanted n-MOSFET. There are several models available for this device. We have studied and simulated threshold voltage model incorporating drain and substrate bias effects, surface potential, inversion layer charge, pinch-off voltage, effective electric field, inversion layer mobility, and subthreshold drain current models based on two linear symmetric pocket doping profiles. We have changed the values of the two parameters, viz. gate insulation material and thickness gradually fixing the other parameter at their typical values. Then we compared and analyzed the simulation results. This study would be helpful for the nano-scaled MOS device designers for various applications to predict the device behavior.

Keywords: Linear symmetric pocket profile, pocket implanted n-MOS Device, model, impact of gate material, insulator thickness.

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Authors: Ghoname Abdullah, Hidekazu Nishimura

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Dust accumulation on the photovoltaic module's surface results in appreciable loss and negatively affects the generated power. Hence, in this paper, the design of a photovoltaic array cleaning system is presented. The cleaning system utilizes one drive motor, two guide rails, and four sweepers during the cleaning process. The cleaning system was experimentally implemented for one month to investigate its efficiency on PV array energy output. The energy capture over a month for PV array cleaned using the proposed cleaning system is compared with that of the energy capture using soiled PV array. The results show a 15% increase in energy generation from PV array with cleaning. From the results, investigating the optimal scheduling of the PV array cleaning could be an interesting research topic.

Keywords: Cleaning system, dust accumulation, PV array, PV module, soiling.

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Authors: Ahmed Madian, Muaz Aljarhi

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Coordinate Rotation Digital Computer (CORDIC) is a unique digital computing unit intended for the computation of mathematical operations and functions. This paper presents A multi CORDIC processor that integrates different CORDIC architectures on a single FPGA chip and allows the user to select the CORDIC architecture to proceed with based on what he wants to calculate and his needs. Synthesis show that radix 2 CORDIC has the lowest clock delay, radix 8 CORDIC has the highest LUT usage and lowest register usage while Hybrid Radix 4 CORDIC had the highest clock delay.

Keywords: Multi, CORDIC, FPGA, Processor.

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Authors: Min Wang , Shuyuan Yang

Abstract:

The paper presents a method of designing ultrawide band (UWB) pulse array beamformer in the case of nearfield. Firstly the principle of space-time processing of UWB pulse array is discussed. The radical beampattern transform based on spherical coordinates is employed to solve the nearfield beamforming of UWB pulse array. The frequency invariant technology is considered for the frequency dependent beampattern of UWB pulse array. We use a multirate bank scheme of to implement the FI beamformer of UWB pulse array. By using multirate filters in each element channel, it can make the response of the UWB array to avoid distortion in the whole band. The simulation resultes are given to prove the efficiency and feasibility of this method.

Keywords: UWB pulse array, frequency invariant, multiratebank, nearfield beamformer, radical transform

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Authors: P. Abhishesh, B. S. Ryuh, Y. S. Oh, H. J. Moon, R. Akanksha

Abstract:

This paper discusses about the conceptual design and development of the control system software using Programmable logic controller (PLC) for autonomous driving and agricultural operations of Multipurpose Agricultural Robot Platform (MARP). Based on given initial conditions by field analysis and desired agricultural operations, the structural design development of MARP is done using modelling and analysis tool. PLC, being robust and easy to use, has been used to design the autonomous control system of robot platform for desired parameters. The robot is capable of performing autonomous driving and three automatic agricultural operations, viz. hilling, mulching, and sowing of seeds in the respective order. The input received from various sensors on the field is later transmitted to the controller via ZigBee network to make the changes in the control program to get desired field output. The research is conducted to provide assistance to farmers by reducing labor hours for agricultural activities by implementing automation. This study will provide an alternative to the existing systems with machineries attached behind tractors and rigorous manual operations on agricultural field at effective cost.

Keywords: Agricultural operations, autonomous driving, MARP, PLC.

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Authors: Zina Saheb, Ezz El-Masry

Abstract:

As the Silicon oxide scaled down in MOSFET technology to few nanometers, gate Direct Tunneling (DT) in Floating gate (FGMOSFET) devices has become a major concern for analog designers. FGMOSFET has been used in many low-voltage and low-power applications, however, there is no accurate model that account for DT gate leakage in nano-scale. This paper studied and analyzed different simulation models for FGMOSFET using TSMC 90-nm technology. The simulation results for FGMOSFET cascade current mirror shows the impact of DT on circuit performance in terms of current and voltage without the need for fabrication. This works shows the significance of using an accurate model for FGMOSFET in nan-scale technologies.

Keywords: CMOS transistor, direct-tunneling current, floatinggate, gate-leakage current, simulation model.

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Authors: J. Mendoza-López, S. Sánchez-Solano, J. L. Huertas-Díaz

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An array of piezoelectric micro actuators can be used for radiation of an ultrasonic carrier signal modulated in amplitude with an acoustic signal, which yields audio frequency applications as the air acts as a self-demodulating medium. This application is known as the parametric array. We propose a parametric array with array elements based on existing piezoelectric micro ultrasonic transducer (pMUT) design techniques. In order to reach enough acoustic output power at a desired operating frequency, a proper ratio between number of array elements and array size needs to be used, with an array total area of the order of one cm square. The transducers presented are characterized via impedance, admittance, noise figure, transducer gain and frequency responses.

Keywords: Pizeoelectric, Microspeaker, MEMS, pMUT, Parametric Array

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Authors: Edward J. Kansa, Pavel Holoborodko

Abstract:

Continuously differentiable radial basis functions (RBFs) are meshfree, converge faster as the dimensionality increases, and is theoretically spectrally convergent. When implemented on current single and double precision computers, such RBFs can suffer from ill-conditioning because the systems of equations needed to be solved to find the expansion coefficients are full. However, the Advanpix extended precision software package allows computer mathematics to resemble asymptotically ideal Platonic mathematics. Additionally, full systems with extended precision execute faster graphical processors units and field-programmable gate arrays because no branching is needed. Sparse equation systems are fast for iterative solvers in a very limited number of cases.

Keywords: Meshless spectrally convergent, partial differential equations, extended arithmetic precision, no branching.

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Authors: A. A. Akande, B. P. Dhonge, B. W. Mwakikunga, A. G. J. Machatine

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This article presents gate-voltage controlled humidity sensing performance of vanadium dioxide nanoparticles prepared from NH₄VO₃ precursor using microwave irradiation technique. The X-ray diffraction, transmission electron diffraction, and Raman analyses reveal the formation of VO₂ (B) with V₂O₅ and an amorphous phase. The BET surface area is found to be 67.67 m²/g. The humidity sensing measurements using the patented lateral-gate MOSFET configuration was carried out. The results show the optimum response at 5 V up to 8 V of gate voltages for 10 to 80% of relative humidity. The dose-response equation reveals the enhanced resilience of the gated VO₂ sensor which may saturate above 272% humidity. The response and recovery times are remarkably much faster (about 60 s) than in non-gated VO₂ sensors which normally show response and recovery times of the order of 5 minutes (300 s).

Keywords: VO2, VO2 (B), V2O5, MOSFET, gate voltage, humidity sensor.

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Authors: Yashvir Singh, Mayank Joshi

Abstract:

A lateral trench-gate power metal-oxide-semiconductor on 4H-SiC is proposed. The device consists of two separate trenches in which two gates are placed on both sides of P-body region resulting two parallel channels. Enhanced current conduction and reduced-surface-field effect in the structure provide substantial improvement in the device performance. Using two dimensional simulations, the performance of proposed device is evaluated and compare of with that of the conventional device for same cell pitch. It is demonstrated that the proposed structure provides two times higher output current, 11% decrease in threshold voltage, 70% improvement in transconductance, 70% reduction in specific ON-resistance, 52% increase in breakdown voltage, and nearly eight time improvement in figure-of-merit over the conventional device.

Keywords: 4H-SiC, lateral, trench-gate, power MOSFET.

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Authors: Omid Mirmotahari, Yngvar Berg

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In this paper we promote the Ultra Low Voltage (ULV) NAND gate to replace either partly or entirely the encryption block of a design to withstand power analysis attack.

Keywords: Differential Power Analysis (DPA), Low Voltage (LV), Ultra Low Voltage (ULV), Floating-Gate (FG), supply current analysis.

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Authors: A. Muthuramalingam, S. Himavathi, E. Srinivasan

Abstract:

.Hardware realization of a Neural Network (NN), to a large extent depends on the efficient implementation of a single neuron. FPGA-based reconfigurable computing architectures are suitable for hardware implementation of neural networks. FPGA realization of ANNs with a large number of neurons is still a challenging task. This paper discusses the issues involved in implementation of a multi-input neuron with linear/nonlinear excitation functions using FPGA. Implementation method with resource/speed tradeoff is proposed to handle signed decimal numbers. The VHDL coding developed is tested using Xilinx XC V50hq240 Chip. To improve the speed of operation a lookup table method is used. The problems involved in using a lookup table (LUT) for a nonlinear function is discussed. The percentage saving in resource and the improvement in speed with an LUT for a neuron is reported. An attempt is also made to derive a generalized formula for a multi-input neuron that facilitates to estimate approximately the total resource requirement and speed achievable for a given multilayer neural network. This facilitates the designer to choose the FPGA capacity for a given application. Using the proposed method of implementation a neural network based application, namely, a Space vector modulator for a vector-controlled drive is presented

Keywords: FPGA implementation, multi-input neuron, neural network, nn based space vector modulator.

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Authors: Priyanka Malik A, Rishu Chaujar B, Mridula Gupta C, R.S. Gupta D

Abstract:

In this paper, for the first time, a two-dimensional (2D) analytical drain current model for sub-100 nm multi-layered gate material engineered trapezoidal recessed channel (MLGMETRC) MOSFET: a novel design is presented and investigated using ATLAS and DEVEDIT device simulators, to mitigate the large gate leakages and increased standby power consumption that arise due to continued scaling of SiO2-based gate dielectrics. The twodimensional (2D) analytical model based on solution of Poisson-s equation in cylindrical coordinates, utilizing the cylindrical approximation, has been developed which evaluate the surface potential, electric field, drain current, switching metric: ION/IOFF ratio and transconductance for the proposed design. A good agreement between the model predictions and device simulation results is obtained, verifying the accuracy of the proposed analytical model.

Keywords: ATLAS, DEVEDIT, NJD, MLGME- TRCMOSFET.

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Authors: Ashraf Abuelhaija, Klaus Solbach

Abstract:

In Ultra high-field MRI scanners (3T and higher), parallel RF transmission techniques using multiple RF chains with multiple transmit elements are a promising approach to overcome the high-field MRI challenges in terms of inhomogeneity in the RF magnetic field and SAR. However, mutual coupling between the transmit array elements disturbs the desirable independent control of the RF waveforms for each element. This contribution demonstrates a 18 dB improvement of decoupling (isolation) performance due to the very low output impedance of our 1 kW power amplifier.

Keywords: EM coupling, Inter-element isolation, Magnetic resonance imaging (MRI), Parallel Transmit.

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Authors: A. Kamath, Z. X. Chen, C. J. Gu, F. Zheng, X. P. Wang, N. Singh, G-Q. Lo

Abstract:

In this paper we use low frequency noise analysis to understand and map the current conduction path in a multi gate junctionless FinFET.  The device used in this study behaves as a gated resistor and shows excellent short channel effect suppression due to its multi gate structure. Generally for a bulk conduction device like the junctionless device studied in this work, the low frequency noise can be modelled using the mobility fluctuation model; however for this device we can also see the effect of carrier fluctuations on the LFN characteristic. The noise characteristic at different gate bias and also the possible location of the traps is explained.

Keywords: LFN analysis, junctionless, Current conduction path, FinFET.

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Authors: Yu Ren Lin, Yu Hong Li

Abstract:

Vision-based intelligent vehicle applications often require large amounts of memory to handle video streaming and image processing, which in turn increases complexity of hardware and software. This paper presents an FPGA implement of a vision-based blind spot warning system. Using video frames, the information of the blind spot area turns into one-dimensional information. Analysis of the estimated entropy of image allows the detection of an object in time. This idea has been implemented in the XtremeDSP video starter kit. The blind spot warning system uses only 13% of its logic resources and 95k bits block memory, and its frame rate is over 30 frames per sec (fps).

Keywords: blind-spot area, image, FPGA

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Authors: Lalita Gupta, R. P. Singh

Abstract:

Array signal processing involves signal enumeration and source localization. Array signal processing is centered on the ability to fuse temporal and spatial information captured via sampling signals emitted from a number of sources at the sensors of an array in order to carry out a specific estimation task: source characteristics (mainly localization of the sources) and/or array characteristics (mainly array geometry) estimation. Array signal processing is a part of signal processing that uses sensors organized in patterns or arrays, to detect signals and to determine information about them. Beamforming is a general signal processing technique used to control the directionality of the reception or transmission of a signal. Using Beamforming we can direct the majority of signal energy we receive from a group of array. Multiple signal classification (MUSIC) is a highly popular eigenstructure-based estimation method of direction of arrival (DOA) with high resolution. This Paper enumerates the effect of missing sensors in DOA estimation. The accuracy of the MUSIC-based DOA estimation is degraded significantly both by the effects of the missing sensors among the receiving array elements and the unequal channel gain and phase errors of the receiver.

Keywords: Array Signal Processing, Beamforming, ULA, Direction of Arrival, MUSIC

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Authors: Damola O. Lawal, David W. Gresty, Diane E. Gan, Louise Hewitt

Abstract:

This paper investigates the feasibility of using a programmable USB such as the O.MG Cable to perform a file tampering attack. Here, the O.MG Cable, an apparently harmless mobile device charger is used in an unauthorised way, to alter the content of a file (an accounts record-January_Contributions.xlsx). The aim is to determine if a forensics analyst can reliably determine who has altered the target file; the O.MG Cable or the user of the machine. This work highlights some of the traces of the O.MG Cable left behind on the target computer itself such as the Product ID (PID) and Vendor ID (ID). Also discussed is the O.MG Cable’s behaviour during the experiments. We determine if a forensics analyst could identify if any evidence has been left behind by the programmable device on the target file once it has been removed from the computer to establish if the analyst would be able to link the traces left by the O.MG Cable to the file tampering. It was discovered that the forensic analyst might mistake the actions of the O.MG Cable for the computer users. Experiments carried out in this work could further the discussion as to whether an innocent user could be punished for the unauthorised changes made by a programmable device.

Keywords: O.MG Cable, programmable USB, file tampering attack, digital evidence credibility, miscarriage of justice, cyber fraud.

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Authors: Tapan Trivedi, Pramod Agarwal, Rajendrasinh Jadeja, Pragnesh Bhatt

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Space Vector Pulse Width Modulation is popular for variable frequency drives. The method has several advantages over carried based PWM and is computation intensive. The implementation of SVPWM for multilevel inverter requires special attention and at the same time consumes considerable resources. Due to faster processing power and reduced over all computational burden, FPGAs are being investigated as an alternative for other controllers. In this paper, a space vector PWM algorithm is implemented using FPGA which requires less computational area and is modular in structure. The algorithm is verified experimentally for Neutral Point Clamped inverter using FPGA development board xc3s5000-4fg900.

Keywords: Modular structure, Multilevel inverter, Space Vector PWM, Switching States.

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Authors: K. Karami, S. Hassan, S. Taking, A. Ofiare, A. Dhongde, A. Al-Khalidi, E. Wasige

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We have made a comparative study on the influence of Al2O3 and HfO2 grown using Atomic Layer Deposition (ALD) technique as dielectric in the AlGaN/GaN metal oxide semiconductor high electron mobility transistor (MOS-HEMT) structure. Five samples consisting of 20 nm and 10 nm each of A2lO3 and HfO2 respectively and a Schottky gate HEMT, were fabricated and measured. The threshold voltage shifts towards negative by 0.1 V and 1.8 V for 10 nm thick HfO2 and 10 nm thick Al2O3 gate dielectric layers, respectively. The negative shift for the 20 nm HfO2 and 20 nm Al2O3 were 1.2 V and 4.9 V, respectively. Higher gm/IDS (transconductance to drain current) ratio was also obtained in HfO2 than Al2O3. With both materials as dielectric, a significant reduction in the gate leakage current in the order of 104 was obtained compared to the sample without the dielectric material.

Keywords: AlGaN/GaN HEMTs, Al2O3, HfO2, MOSHEMTs.

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Authors: T.F.Lai, Wan Nor Liza Mahadi, Norhayati Soin

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This paper present a circular patch microstrip array antenna operate in KU-band (10.9GHz – 17.25GHz). The proposed circular patch array antenna will be in light weight, flexible, slim and compact unit compare with current antenna used in KU-band. The paper also presents the detail steps of designing the circular patch microstrip array antenna. An Advance Design System (ADS) software is used to compute the gain, power, radiation pattern, and S11 of the antenna. The proposed Circular patch microstrip array antenna basically is a phased array consisting of 'n' elements (circular patch antennas) arranged in a rectangular grid. The size of each element is determined by the operating frequency. The incident wave from satellite arrives at the plane of the antenna with equal phase across the surface of the array. Each 'n' element receives a small amount of power in phase with the others. There are feed network connects each element to the microstrip lines with an equal length, thus the signals reaching the circular patches are all combined in phase and the voltages add up. The significant difference of the circular patch array antenna is not come in the phase across the surface but in the magnitude distribution.

Keywords: Circular patch microstrip array antenna, gain, radiation pattern, S-Parameter.

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