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Gate Voltage Controlled Humidity Sensing Using MOSFET of VO2 Particles

Authors: A. A. Akande, B. P. Dhonge, B. W. Mwakikunga, A. G. J. Machatine


This article presents gate-voltage controlled humidity sensing performance of vanadium dioxide nanoparticles prepared from NH4VO3 precursor using microwave irradiation technique. The X-ray diffraction, transmission electron diffraction, and Raman analyses reveal the formation of VO2 (B) with V2O5 and an amorphous phase. The BET surface area is found to be 67.67 m2/g. The humidity sensing measurements using the patented lateral-gate MOSFET configuration was carried out. The results show the optimum response at 5 V up to 8 V of gate voltages for 10 to 80% of relative humidity. The dose-response equation reveals the enhanced resilience of the gated VO2 sensor which may saturate above 272% humidity. The response and recovery times are remarkably much faster (about 60 s) than in non-gated VO2 sensors which normally show response and recovery times of the order of 5 minutes (300 s).

Keywords: MOSFET, VO2, humidity sensor, gate voltage, VO2 (B), V2O5

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[1] A.A. Akande, E.C Linganiso, B.P Dhonge, K.E. Rammutla, A. Machatine, L. Prinsloo, H. Kunert, B.W. Mwakikunga, “Phase evolution of vanadium oxides obtained through temperature programmed calcinations of ammonium vanadate in hydrogen atmosphere and their humidity sensing” J of Mat. Chem.and Phy. 151, 206, April 2015.
[2] A.A. Akande, K. E. Rammutla, T. Moyo, N. S.E. Osman, Steven S. Nkosi, C.J. Jafta, and Bonex W. Mwakikunga, “Magnetism variations and susceptibility hysteresis at metakl-insulator phase temperature of VO2 in a composite film containing vanadium and tungsten oxides” J Magn. Magn. Mater. 375, Feb. 2015.
[3] E. Volker “The metal-to-insulator transitions of VO2: A band theoretical approach” Ann. Phy Leipzig 11 (1-6) (2002) 9
[4] E. Strelcov, Y. Lilach, A. Kolmakov, “Gas sensor based on metal to insulator transition in VO2 nanowire thermistor” Nano Lett. 9 (2009) 2322-2322
[5] C. Wang, X. Liu, W. Xiong, Y. Zheng, “PEG-Assisted hydrothermal synthesis of VO2 (A) nanowire with remarkable optical switching properties” International Conference on Mechanics and structural Engineering (ICMMSE 2016)
[6] Z. Yang, C. Ko, S. Ramanathan, “Oxide Electronics Ultilizing Ultrafast Metal to Insulator Transitions” Annu. Rev. Mater. Res. 41 (2001) 337-367
[7] M. Maaza, O. Nemraoui, C. Sella, A. C. Beye and B. Baruch-Barak, Thermal induced tenability of surface plasmon resonance in Au-VO2 nano-photonics, Optics Comm. 254 (2005) 188-195.
[8] B. W. Mwakikunga, A field effect transistor and a gas detector including a plurality of field effect transistors, PA158013/P No. WO2014191892 A1 PCT/IB2014/061713 also published as China (CN105474006A) Germany (DE112014002575T5) ans USA (US20160116434)
[9] A.A. Akande, B.W. Mwakikunga, K.E. Rammutla, A. Machatine, L., “Lager selectivity of the V2O5 nano-particles sensitivity to NO2 than NH3” J of Sensor and Trasducers 151, 206, Sept.2015)
[10] B. Mwakikunga, M. Maaza, K.t. Hillie, C.J. Arendse, T. Malwela, E. Sideras Hadded “From Phonon confinement to phonon spllitings in flat single nanostructures, A case of [email protected] core-shell nano-ribbons,” Ranan spectr. (2012).
[11] A.A. Akande “Vanadium dioxide Nanostructure Production and Applications in Sensors” MSc Thesis 2014 (Unpublished).