Commenced in January 2007
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Gate Voltage Controlled Humidity Sensing Using MOSFET of VO2 Particles

Authors: A. A. Akande, B. P. Dhonge, B. W. Mwakikunga, A. G. J. Machatine


This article presents gate-voltage controlled humidity sensing performance of vanadium dioxide nanoparticles prepared from NH4VO3 precursor using microwave irradiation technique. The X-ray diffraction, transmission electron diffraction, and Raman analyses reveal the formation of VO2 (B) with V2O5 and an amorphous phase. The BET surface area is found to be 67.67 m2/g. The humidity sensing measurements using the patented lateral-gate MOSFET configuration was carried out. The results show the optimum response at 5 V up to 8 V of gate voltages for 10 to 80% of relative humidity. The dose-response equation reveals the enhanced resilience of the gated VO2 sensor which may saturate above 272% humidity. The response and recovery times are remarkably much faster (about 60 s) than in non-gated VO2 sensors which normally show response and recovery times of the order of 5 minutes (300 s).

Keywords: VO2, VO2 (B), V2O5, MOSFET, gate voltage, humidity sensor.

Digital Object Identifier (DOI):

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[9] A.A. Akande, B.W. Mwakikunga, K.E. Rammutla, A. Machatine, L., “Lager selectivity of the V2O5 nano-particles sensitivity to NO2 than NH3” J of Sensor and Trasducers 151, 206, Sept.2015)
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[11] A.A. Akande “Vanadium dioxide Nanostructure Production and Applications in Sensors” MSc Thesis 2014 (Unpublished).