Identification of States and Events for the Static and Dynamic Simulation of Single Electron Tunneling Circuits
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 33122
Identification of States and Events for the Static and Dynamic Simulation of Single Electron Tunneling Circuits

Authors: Sharief F. Babiker, Abdelkareem Bedri, Rania Naeem

Abstract:

The implementation of single-electron tunneling (SET) simulators based on the master-equation (ME) formalism requires the efficient and accurate identification of an exhaustive list of active states and related tunnel events. Dynamic simulations also require the control of the emerging states and guarantee the safe elimination of decaying states. This paper describes algorithms for use in the stationary and dynamic control of the lists of active states and events. The paper presents results obtained using these algorithms with different SET structures.

Keywords: Active state, Coulomb blockade, Master Equation, Single electron devices

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1075008

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1394

References:


[1] K. Likharev, "Correlated discrete transfer of single electrons in ultrasmall tunnel junctions", IBM J. Res. & Dev. Vol (32),1, pp. 144-158, 1988
[2] S. Gustavsson et. al. "Electrons in quantum dots: One by one", J. Applied Physics, 105, 122401, 2009.
[3] P. Heshfield, J. Davies, P. Hydgaard, C. Stanton & J. Wilkinson, "Zerofrequency current noise for the double tunnel junction Coulomb blockade", Phys Rev B, 47 (4), pp. 1967-1979, 1992.
[4] L. Fonseca, A. N. Korotkov and K. Likharev, "SENECA: a New Program for the Analysis of Single-Electron Devices", VLSI Design, Vol. 6, Nos. (1--4), pp. 57-60, 1998.
[5] V. Nguyen and V. Nguyena, "Shot noise in metallic double dot structures with a negative differential conductance", Appl. Phys Lett, 87, 123107, 2005.
[6] C. Wasshuber, H. Kosina & S. Selberherr, "SIMON-A simulator for single-electron tunnel devices and circuits", IEEE Trans. Computer- Aided Design of Integrated Circuits and Systems, 6 (9), 937-944, 2002.
[7] Y. S. Yu, J. H. OH, S. W. Hwang, and D. Ahn, "Implementation of Single Electron Circuit", Simulation by PSPICE: KOSEC SPICE," IEIC Technical Report vol. 100, no. 150, pp. 85-90, 2000.
[8] G. Zardalidis, and I. G. Karafyllidis, "SECS: A New Single-Electron- Circuit Simulator,", IEEE Transactions on Circuits and Systems - I, vol. 55, no. 9, pp. 2774-2784, 2008.
[9] S. Amakawa1 et. al, "Single-electron logic based on multiple-tunnel junctions", in Mesoscopic Tunneling Devices, ed. H. Nakashima, 2004.
[10] J. Bylander, T. Duty and P. Delsing, "LineWidths of Single-Electron Tunneling Oscillations: Experiment and Numerical Simulations", 24th International Conference on Low Temperature Physics - LT24. AIP Conference Proceedings, Volume 850, pp. 1442-1443 (2006).
[11] S. Babiker, "Simulation of single-electron transport in nanostructured quantum dots", IEEE Trans. On Electron Devices, vol. 52, no. 3, pp. 392-396, 2005.