Search results for: Thin Wafer
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 392

Search results for: Thin Wafer

302 Elastic-Plastic Transition in a Thin Rotating Disc with Inclusion

Authors: Pankaj, Sonia R. Bansal

Abstract:

Stresses for the elastic-plastic transition and fully plastic state have been derived for a thin rotating disc with inclusion and results have been discussed numerically and depicted graphically. It has been observed that the rotating disc with inclusion and made of compressible material requires lesser angular speed to yield at the internal surface whereas it requires higher percentage increase in angular speed to become fully plastic as compare to disc made of incompressible material.

Keywords: Angular speed, Elastic-Plastic, Inclusion, Rotatingdisc, Stress, Transition.

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301 Mechanical Properties and Microstructural Properties of CrSiN Coating

Authors: Dhiflaoui Hafedh, Khlifi Kaouthar, Ben Cheikh Larbi Ahmed

Abstract:

The present study deals with the characterization of CrSiN coatings obtained by PVD magnetron sputtering systems. CrSiN films were deposited with different Si contents, in order to check the effect of at.% variation on the different properties of the Cr–N system. Coatings were characterized by scanning electron microscopy (SEM) for thickness measurements, X-ray diffraction. Surface morphology and the roughness characteristics were explored using AFM, Mechanicals properties, elastic and plastic deformation resistance of thin films were investigated using nanoindentation test. We observed that the Si addition improved the hardness and the Young’s modulus of the Cr–N system. Indeed, the hardness value is 18,56 GPa for CrSiN coatings. Besides, the Young’s modulus value is 224,22 GPa for CrSiN coatings for Si content of 1.2 at.%.

Keywords: Thin film, mechanicals properties, PVD.

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300 Comparison between the Efficiency of Heterojunction Thin Film InGaP\GaAs\Ge and InGaP\GaAs Solar Cell

Authors: F. Djaafar, B. Hadri, G. Bachir

Abstract:

This paper presents the design parameters for a thin film 3J InGaP/GaAs/Ge solar cell with a simulated maximum efficiency of 32.11% using Tcad Silvaco. Design parameters include the doping concentration, molar fraction, layers’ thickness and tunnel junction characteristics. An initial dual junction InGaP/GaAs model of a previous published heterojunction cell was simulated in Tcad Silvaco to accurately predict solar cell performance. To improve the solar cell’s performance, we have fixed meshing, material properties, models and numerical methods. However, thickness and layer doping concentration were taken as variables. We, first simulate the InGaP\GaAs dual junction cell by changing the doping concentrations and thicknesses which showed an increase in efficiency. Next, a triple junction InGaP/GaAs/Ge cell was modeled by adding a Ge layer to the previous dual junction InGaP/GaAs model with an InGaP /GaAs tunnel junction.

Keywords: Heterojunction, modeling, simulation, thin film, Tcad Silvaco.

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299 Preparation of Porous Metal Membrane by Thermal Annealing for Thin Film Encapsulation

Authors: Jaibir Sharma, Lee JaeWung, Merugu Srinivas, Navab Singh

Abstract:

This paper presents thermal annealing de-wetting technique for the preparation of porous metal membrane for Thin Film Encapsulation (TFE) application. Thermal annealing de-wetting experimental results reveal that pore size formation in porous metal membrane depend upon i.e. 1. The substrate at which metal is deposited, 2. Melting point of metal used for porous metal cap layer membrane formation, 3. Thickness of metal used for cap layer, 4. Temperature used for formation of porous metal membrane. In order to demonstrate this technique, Silver (Ag) was used as a metal for preparation of porous metal membrane on amorphous silicon (a-Si) and silicon oxide. The annealing of the silver thin film of various thicknesses was performed at different temperature. Pores in porous silver film were analyzed using Scanning Electron Microscope (SEM). In order to check the usefulness of porous metal film for TFE application, the porous silver film prepared on amorphous silicon (a- Si) and silicon oxide was released using XeF2 and VHF, respectively. Finally, guide line and structures are suggested to use this porous membrane for robust TFE application.

Keywords: De-wetting, thermal annealing, metal, melting point, porous.

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298 Effect of Support Distance on Damage of Drilled Thin CFRP Laminates

Authors: Jean François Chatelain, Imed Zaghbani, Gilbert Lebrun, Kaml Hasni

Abstract:

Severe damages may occur during the drilling of carbon fiber reinforced plastics (CFRP). In practice, this damage is limited by adding a backup support to the drilled parts. For some aeronautical parts with curvatures, backing up parts is a demanding process. In order to simplify the operation, this research studies the effect of using a configurable setup to support parts on the resulting quality of drilled holes. The test coupons referenced in this study are twenty four-plies unidirectional laminates made of carbon fibers and epoxy resin. Different signals were measured during the drilling process for these laminates, including the thrust force, the displacement and the acceleration. The processing of these signals demonstrated that the damage is due to the combination of two main factors: the spring-back of the thin part and the thrust force. The results found were confirmed for different feeds and speeds. When the distance between supports is increased, it is observed that the spring-back increases but the thrust force decreases. The study proves the feasibility of unsupported drilling of thin CFRP laminates without creating any observable damage.

Keywords: CFRP, Damage, Drilling, Flexible setup.

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297 Approximate Tension Buckling Capacity of Thin Edge-Cracked Web Plate Subjected to Pure Bending

Authors: Sebastian B. Mendes

Abstract:

The presence of a vertical edge-crack within a web plate subjected to pure bending induces local compressive stresses about the crack which may cause tension buckling. Approximate theoretical expressions were derived for the critical far-field tensile stress and bending moment capacity of an edge-cracked web plate associated with tension buckling. These expressions were validated with finite element analyses and used to investigate the possibility of tension buckling in web-cracked trial girders. It was found that tension buckling is an unlikely occurrence unless the web is relatively thin or the crack is very long.

Keywords: Fatigue crack, tension buckling, Rayleigh-Ritz, structural stability.

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296 Temperature Sensor IC Design for Intracranial Monitoring Device

Authors: Wai Pan Chan, Minkyu Je

Abstract:

A precision CMOS chopping amplifier is adopted in this work to improve a CMOS temperature sensor high sensitive enough for intracranial temperature monitoring. An amplified temperature sensitivity of 18.8 ± 3*0.2 mV/oC is attained over the temperature range from 20 oC to 80 oC from a given 10 samples of the same wafer. The analog frontend design outputs the temperature dependent and the temperature independent signals which can be directly interfaced to a 10 bit ADC to accomplish an accurate temperature instrumentation system.

Keywords: Chopping, analog frontend, CMOS temperature sensor, traumatic brain injury (TBI), intracranial temperature monitoring.

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295 Creep Transition in a Thin Rotating Disc Having Variable Density with Inclusion

Authors: Pankaj, Sonia R. Bansal

Abstract:

Creep stresses and strain rates have been obtained for a thin rotating disc having variable density with inclusion by using Seth-s transition theory. The density of the disc is assumed to vary radially, i.e. ( ) 0 ¤ü ¤ü r/b m - = ; ¤ü 0 and m being real positive constants. It has been observed that a disc, whose density increases radially, rotates at higher angular speed, thus decreasing the possibility of a fracture at the bore, whereas for a disc whose density decreases radially, the possibility of a fracture at the bore increases.

Keywords: Elastic-Plastic, Inclusion, Rotating disc, Stress, Strain rates, Transition, variable density.

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294 The Effects of RCA Clean Variables on Particle Removal Efficiency

Authors: Siti Kudnie Sahari, Jane Chai Hai Sing, Khairuddin Ab. Hamid

Abstract:

Shrunken patterning for integrated device manufacturing requires surface cleanliness and surface smoothness in wet chemical processing [1]. It is necessary to control all process parameters perfectly especially for the common cleaning technique RCA clean (SC-1 and SC-2) [2]. In this paper the characteristic and effect of surface preparation parameters are discussed. The properties of RCA wet chemical processing in silicon technology is based on processing time, temperature, concentration and megasonic power of SC-1 and QDR. An improvement of wafer surface preparation by the enhanced variables of the wet cleaning chemical process is proposed.

Keywords: RCA, SC-1, SC-2, QDR

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293 Nano Effects of Nitrogen Ion Implantation on TiN Hard Coatings Deposited by PVD and IBAD

Authors: Branko Skoric, Aleksandar Miletic, Pal Terek, Lazar Kovacevic, Milan Kukuruzovic

Abstract:

In this paper, we present the results of a study of TiN thin films which are deposited by a Physical Vapour Deposition (PVD) and Ion Beam Assisted Deposition (IBAD). In the present investigation the subsequent ion implantation was provided with N5+ ions. The ion implantation was applied to enhance the mechanical properties of surface. The thin film deposition process exerts a number of effects such as crystallographic orientation, morphology, topography, densification of the films. A variety of analytic techniques were used for characterization, such as scratch test, calo test, Scanning electron microscopy (SEM), Atomic Force Microscope (AFM), X-ray diffraction (XRD) and Energy Dispersive X-ray analysis (EDAX).

Keywords: Steel, coating, super hard, ion implantation, nanohardness.

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292 A Compact Wearable Slot Antenna for LTE and WLAN Applications

Authors: Haider K. Raad

Abstract:

In this paper, a compact wide-band, ultra-thin and flexible slot antenna intended for wearable applications is presented. The presented antenna is designed to provide Wireless Local Area Network (WLAN) and Long Term Evolution (LTE) connectivity. The presented design exhibits a relatively wide bandwidth (1600-3500 MHz below -6 dB impedance bandwidth limit). The antenna is positioned on a 33 mm x 30 mm flexible substrate with a thickness of 50 µm. Antenna properties, such as the far-field radiation patterns, scattering parameter S11 are provided. The presented compact, thin and flexible design along with excellent radiation characteristics are deemed suitable for integration into flexible and wearable devices.

Keywords: Wearable Electronics, Slot Antenna, LTE, WLAN.

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291 Effect of Thickness on Structural and Electrical Properties of CuAlS2 Thin Films Grown by Two Stage Vacuum Thermal Evaporation Technique

Authors: A. U. Moreh, M. Momoh, H. N. Yahya, B. Hamza, I. G. Saidu, S. Abdullahi

Abstract:

This work studies the effect of thickness on structural and electrical properties of CuAlS2 thin films grown by two stage vacuum thermal evaporation technique. CuAlS2 thin films of thicknesses 50nm, 100nm and 200nm were deposited on suitably cleaned corning 7059 glass substrate at room temperature (RT). In the first stage Cu-Al precursors were grown at room temperature by thermal evaporation and in the second stage Cu-Al precursors were converted to CuAlS2 thin films by sulfurisation under sulfur atmosphere at the temperature of 673K. The structural properties of the films were examined by X-ray diffraction (XRD) technique while electrical properties of the specimens were studied using four point probe method. The XRD studies revealed that the films are of crystalline in nature having tetragonal structure. The variations of the micro-structural parameters, such as crystallite size (D), dislocation density ( ), and micro-strain ( ), with film thickness were investigated. The results showed that the crystallite sizes increase as the thickness of the film increases. The dislocation density and micro-strain decreases as the thickness increases. The resistivity (  ) of CuAlS2 film is found to decrease with increase in film thickness, which is related to the increase of carrier concentration with film thickness. Thus thicker films exhibit the lowest resistivity and high carrier concentration, implying these are the most conductive films. Low electrical resistivity and high carrier concentration are widely used as the essential components in various optoelectronic devices such as light-emitting diode and photovoltaic cells.

Keywords: Crystalline, CuAlS2, evaporation, resistivity, sulfurisation, thickness.

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290 Graphene/ZnO/Polymer Nanocomposite Thin Film for Separation of Oil-Water Mixture

Authors: Suboohi Shervani, Jingjing Ling, Jiabin Liu, Tahir Husain

Abstract:

Offshore oil-spill has become the most emerging problem in the world. In the current paper, a graphene/ZnO/polymer nanocomposite thin film is coated on stainless steel mesh via layer by layer deposition method. The structural characterization of materials is determined by Scanning Electron Microscopy (SEM) and X-ray diffraction (XRD). The total petroleum hydrocarbons (TPHs) and separation efficiency have been measured via gas chromatography – flame ionization detector (GC-FID). TPHs are reduced to 2 ppm and separation efficiency of the nanocomposite coated mesh is reached ≥ 99% for the final sample. The nanocomposite coated mesh acts as a promising candidate for the separation of oil- water mixture.

Keywords: Oil-spill, graphene, oil-water separation, nanocomposite.

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289 Estimation of the Moisture Diffusivity and Activation Energy in Thin Layer Drying of Ginger Slices

Authors: Ebru Kavak Akpinar, Seda Toraman

Abstract:

In the present work, the effective moisture diffusivity and activation energy were calculated using an infinite series solution of Fick-s diffusion equation. The results showed that increasing drying temperature accelerated the drying process. All drying experiments had only falling rate period. The average effective moisture diffusivity values varied from 2.807x10-10 to 6.977x10-10m2 s_1 over the temperature and velocity range. The temperature dependence of the effective moisture diffusivity for the thin layer drying of the ginger slices was satisfactorily described by an Arrhenius-type relationship with activation energy values of 19.313- 22.722 kJ.mol-1 within 40–70 °C and 0.8-3 ms-1 temperature range.

Keywords: Ginger, Drying, Activation energy, Moisture diffusivity.

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288 ICF Neutron Detection Techniques Based on Doped ZnO Crystal

Authors: L. Chen, X. P. Ouyang, Z. B. Zhang, J. F. Zhang, J. L. Liu

Abstract:

Ultrafast doped zinc oxide crystal promised us a good opportunity to build new instruments for ICF fusion neutron measurement. Two pulsed neutron detectors based on ZnO crystal wafer have been conceptually designed, the superfast ZnO timing detector and the scintillation recoil proton neutron detection system. The structure of these detectors was presented, and some characters were studied as well. The new detectors could be much faster than existing systems, and would be more competent for ICF neutron diagnostics.

Keywords: ICF fusion neutron detection, proton recoil telescope, superfast timing, ZnO crystal

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287 Comparative Forensic Analysis of Lipsticks Using Thin Layer Chromatography and Gas Chromatography

Authors: M. O. Ezegbogu, H. B. Osadolor

Abstract:

Lipsticks constitute a significant source of transfer evidence, and can, therefore, provide corroborative or inclusionary evidence in criminal investigation. This study aimed to determine the uniqueness and persistence of different lipstick smears using Thin Layer Chromatography (TLC), and Gas Chromatography with a Flame Ionisation Detector (GC-FID). In this study, we analysed lipstick smears retrieved from tea cups exposed to the environment for up to four weeks. The n-alkane content of each sample was determined using GC-FID, while TLC was used to determine the number of bands, and retention factor of each band per smear. This study shows that TLC gives more consistent results over a 4-week period than GC-FID. It also proposes a maximum exposure time of two weeks for the analysis of lipsticks left in the open using GC-FID. Finally, we conclude that neither TLC nor GC-FID can distinguish lipstick evidence recovered from hypothetical crime scenes.

Keywords: Forensic science, chromatography, identification, lipstick.

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286 Switching Studies on Ge15In5Te56Ag24 Thin Films

Authors: Diptoshi Roy, G. Sreevidya Varma, S. Asokan, Chandasree Das

Abstract:

Germanium Telluride based quaternary thin film switching devices with composition Ge15In5Te56Ag24, have been deposited in sandwich geometry on glass substrate with aluminum as top and bottom electrodes. The bulk glassy form of the said composition is prepared by melt quenching technique. In this technique, appropriate quantity of elements with high purity are taken in a quartz ampoule and sealed under a vacuum of 10-5 mbar. Then, it is allowed to rotate in a horizontal rotary furnace for 36 hours to ensure homogeneity of the melt. After that, the ampoule is quenched into a mixture of ice - water and NaOH to get the bulk ingot of the sample. The sample is then coated on a glass substrate using flash evaporation technique at a vacuum level of 10-6 mbar. The XRD report reveals the amorphous nature of the thin film sample and Energy - Dispersive X-ray Analysis (EDAX) confirms that the film retains the same chemical composition as that of the base sample. Electrical switching behavior of the device is studied with the help of Keithley (2410c) source-measure unit interfaced with Lab VIEW 7 (National Instruments). Switching studies, mainly SET (changing the state of the material from amorphous to crystalline) operation is conducted on the thin film form of the sample. This device is found to manifest memory switching as the device remains 'ON' even after the removal of the electric field. Also it is found that amorphous Ge15In5Te56Ag24 thin film unveils clean memory type of electrical switching behavior which can be justified by the absence of fluctuation in the I-V characteristics. The I-V characteristic also reveals that the switching is faster in this sample as no data points could be seen in the negative resistance region during the transition to on state and this leads to the conclusion of fast phase change during SET process. Scanning Electron Microscopy (SEM) studies are performed on the chosen sample to study the structural changes at the time of switching. SEM studies on the switched Ge15In5Te56Ag24 sample has shown some morphological changes at the place of switching wherein it can be explained that a conducting crystalline channel is formed in the device when the device switches from high resistance to low resistance state. From these studies it can be concluded that the material may find its application in fast switching Non-Volatile Phase Change Memory (PCM) Devices.

Keywords: Chalcogenides, vapor deposition, electrical switching, PCM.

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285 Microwave Shielding of Magnetized Hydrogen Plasma in Carbon Nanotubes

Authors: Afshin Moradi, Mohammad Hosain Teimourpour

Abstract:

We derive simple sets of equations to describe the microwave response of a thin film of magnetized hydrogen plasma in the presence of carbon nanotubes, which were grown by ironcatalyzed high-pressure disproportionation (HiPco). By considering the interference effects due to multiple reflections between thin plasma film interfaces, we present the effects of the continuously changing external magnetic field and plasma parameters on the reflected power, absorbed power, and transmitted power in the system. The simulation results show that the interference effects play an important role in the reflectance, transmittance and absorptance of microwave radiation at the magnetized plasma slab. As a consequence, the interference effects lead to a sinusoidal variation of the reflected intensity and can greatly reduce the amount of reflection power, but the absorption power increases.

Keywords:

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284 Analysis of Normal Penetration of Ogive -Nose Projectiles into Thin Metallic Plates

Authors: M. H. Pol, A. Bidi, A.V. Hoseini, G.H. Liaghat

Abstract:

In this note, a theoretical model for analyzing of normal penetration of the ogive – nose projectile into metallic targets is presented .The failure is assumed to be asymmetry petalling and the analysis is performed by using the energy balance and work done .The work done consist of the work required for plastic deformation Wp, the work for transferring the matter to new position Wd and the work for bending of the petals Wb. In several studies, it has been shown that we can neglect the loss of energy by temperature. In this present study, in first, by assuming the crater formation after perforation, the value of work done is calculated during the normal penetration of conical projectiles into thin metallic targets. Then the value of residual velocity and ballistic limit of the projectile is predicated by using the energy balance. In final, theoretical and experimental results is compared.

Keywords: Ogive Projectile, normal impact, penetration, thinmetallic target.

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283 Interfacial Layer Effect on Novel p-Ni1-xO:Li/n-Si Heterojunction Solar Cells

Authors: Feng-Hao Hsu, Na-Fu Wang, Yu-Zen Tsai, Yu-Song Cheng, Cheng-Fu Yang, Mau-Phon Houng

Abstract:

This study fabricates p-type Ni1xO:Li/n-Si heterojunction solar cells (P+/n HJSCs) by using radio frequency (RF) magnetron sputtering and investigates the effect of substrate temperature on photovoltaic cell properties. Grazing incidence x-ray diffraction, four point probe, and ultraviolet-visible-near infrared discover the optoelectrical properties of p-Ni1-xO thin films. The results show that p-Ni1-xO thin films deposited at 300 oC has the highest grain size (22.4 nm), average visible transmittance (~42%), and electrical resistivity (2.7 Ωcm). However, the conversion efficiency of cell is shown only 2.33% which is lower than the cell (3.39%) fabricated at room temperature. This result can be mainly attributed to interfacial layer thickness (SiOx) reduces from 2.35 nm to 1.70 nm, as verified by high-resolution transmission electron microscopy.

Keywords: Heterojunction, nickel oxide, solar cells, sputtering.

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282 A High-Crosstalk Silicon Photonic Arrayed Waveguide Grating

Authors: Qing Fang, Lianxi Jia, Junfeng Song, Chao Li, Xianshu Luo, Mingbin Yu, Guoqiang Lo

Abstract:

In this paper, we demonstrated a 1 × 4 silicon photonic cascaded arrayed waveguide grating, which is fabricated on a SOI wafer with a 220 nm top Si layer and a 2µm buried oxide layer. The measured on-chip transmission loss of this cascaded arrayed waveguide grating is ~ 5.6 dB, including the fiber-to-waveguide coupling loss. The adjacent crosstalk is 33.2 dB. Compared to the normal single silicon photonic arrayed waveguide grating with a crosstalk of ~ 12.5 dB, the crosstalk of this device has been dramatically increased.

Keywords: Silicon photonic, arrayed waveguide grating, high-crosstalk, cascaded structure.

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281 Loss Reduction and Reliability Improvement of Industrial Distribution System through Network Reconfiguration

Authors: Ei Ei Phyu, Kyaw Myo Lin, Thin Thin Moe

Abstract:

The paper presents an approach to improve the reliability and reduce line losses of practical distribution system applying network reconfiguration. The change of the topology redirects the power flow within the distribution network to obtain better performance of the system. Practical distribution network (Pyigyitagon Industrial Zone (I)) is used as the case study network. The detailed calculations of the reliability indices are done by using analytical method and power flow calculation is performed by Newton-Rephason solver. The comparison of various network reconfiguration techniques are described with respect to power loss and reliability index levels. Finally, the optimal reconfigured network is selected among difference cases based on the two factors: the most reliable network and the least loss minimization.

Keywords: Distribution system reliability, loss reduction, network reconfiguration, reliability enhancement, reliability indices.

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280 The Light Response Characteristics of Oxide-Based Thin Film Transistors

Authors: Soo-Yeon Lee, Seung-Min Song, Moon-Kyu Song, Woo-Geun Lee, Kap-Soo Yoon, Jang-Yeon Kwon, Min-Koo Han

Abstract:

We fabricated the inverted-staggered etch stopper structure oxide-based TFT and investigated the characteristics of oxide TFT under the 400 nm wavelength light illumination. When 400 nm light was illuminated, the threshold voltage (Vth) decreased and subthreshold slope (SS) increased at forward sweep, while Vth and SS were not altered when larger wavelength lights, such as 650 nm, 550 nm and 450 nm, were illuminated. At reverse sweep, the transfer curve barely changed even under 400 nm light. Our experimental results support that photo-induced hole carriers are captured by donor-like interface trap and it caused the decrease of Vth and increase of SS. We investigated the interface trap density increases proportionally to the photo-induced hole concentration at active layer.

Keywords: thin film transistor, oxide-based semiconductor, lightresponse

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279 Synthesis and Characterization of Plasma Polymerized Thin Films Deposited from Benzene and Hexamethyldisiloxane using (PECVD) Method

Authors: Hisham M. Abourayana, Nuri A. Zreiba, Abdulkader M. Elamin

Abstract:

Polymer-like organic thin films were deposited on both aluminum alloy type 6061 and glass substrates at room temperature by Plasma Enhanced Chemical Vapor Deposition (PECVD) methodusing benzene and hexamethyldisiloxane (HMDSO) as precursor materials. The surface and physical properties of plasma-polymerized organic thin films were investigated at different r.f. powers. The effects of benzene/argon ratio on the properties of plasma polymerized benzene films were also investigated. It is found that using benzene alone results in a non-coherent and non-adherent powdery deposited material. The chemical structure and surface properties of the asgrown plasma polymerized thin films were analyzed on glass substrates with FTIR and contact angle measurements. FTIR spectra of benzene deposited film indicated that the benzene rings are preserved when increasing benzene ratio and/or decreasing r.f. powers. FTIR spectra of HMDSO deposited films indicated an increase of the hydrogen concentration and a decrease of the oxygen concentration with the increase of r.f. power. The contact angle (θ) of the films prepared from benzene was found to increase by about 43% as benzene ratio increases from 10% to 20%. θ was then found to decrease to the original value (51°) when the benzene ratio increases to 100%. The contact angle, θ, for both benzene and HMDSO deposited films were found to increase with r.f. power. This signifies that the plasma polymerized organic films have substantially low surface energy as the r.f power increases. The corrosion resistance of aluminum alloy substrate both bare and covered with plasma polymerized thin films was carried out by potentiodynamic polarization measurements in standard 3.5 wt. % NaCl solution at room temperature. The results indicate that the benzene and HMDSO deposited films are suitable for protection of the aluminum substrate against corrosion. The changes in the processing parameters seem to have a strong influence on the film protective ability. Surface roughness of films deposited on aluminum alloy substrate was investigated using scanning electron microscopy (SEM). The SEM images indicate that the surface roughness of benzene deposited films increase with decreasing the benzene ratio. SEM images of benzene and HMDSO deposited films indicate that the surface roughness decreases with increasing r.f. power. Studying the above parameters indicate that the films produced are suitable for specific practical applications.

Keywords: Plasma polymerization, potentiodynamic test, Contact angle.

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278 Analysis of the Strip Shape and Microstructure with Consideration of Roll Crossing and Shifting

Authors: Z. Y. Jiang, H. B. Tibar, A. Aljabri

Abstract:

Optimisation of the physical and mechanical properties of cold rolled thin strips is achieved by controlling the rolling parameters. In this paper, the factors affecting the asymmetrical cold rolling of thin low carbon steel strip have been studied at a speed ratio of 1.1 without lubricant applied. The effect of rolling parameters on the resulting microstructure was also investigated. It was found that under dry condition, work roll shifting and work roll cross angle can improve the strip profile, and the result is more significant with an increase of work roll cross angle rather than that of work roll shifting. However, there was no obvious change in microstructure. In addition, effects of rolling parameters on strip profile and microstructure have also been discussed.

Keywords: Reduction ratio, rolling speed ratio, strip shape, work rolls cross angle, work roll shifting.

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277 Separation of Vitamin B2 and B12 byImpregnate HPTLC Plates with Boric Acid

Authors: Homayon Ahmad Panahi, Hossein Sid Kalal, Atyeh Rahimi

Abstract:

A high performance thin layer chromatography system (HPTLC) for the separation of vitamin B2 and B12 has been developed. The separation was successfully using a solvent system of methanol, water, ammonia 7.3.1 (V/V) as mobile phase on HPTLC plates impregnated with boric acid. The effect of other mobile phases on the separation of vitamins was also examined. The method is based on different behavior of investigated compounds in impregnated TLC plates with different amount of boric acid. The Rf values of vitamin B2 and B12 are considered on non impregnated and impregnated silica gel HPTLC plate with boric acid. The effect of boric acid in the mobile phase and on HPTLC plates on the RF values of the vitamins has also been studied.

Keywords: High performance thin layer chromatography, HPTLC, Vitamin B2, Vitamin B12, Separation.

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276 Glutamic Acid Production from Potato by Brevibacterium linens

Authors: Marzieh Moosavi-Nasab, Masoumeh Izadi, Sara Hosseinpour

Abstract:

In this study, the possibility of using potato as a substrate for glutamic acid production by Brevibacterium linens was investigated. For preparation of fermentation medium, potato was hydrolyzed by hydrochloridric acid. The medium contained potato hydrolysate, tween 80, mineral solution, glucose, and potassium hydrogen phosphate. The initial pH of the medium was adjusted to 7-7.5. For achieving the optimum time with maximum yield, the beakers containing the medium and the inoculums were incubated in a rotary water bath flask shaker for one to five days. Thin layer choromatography was used for quantitative and qualitative assay of the glutamic acid produced. The results revealed that as fermentation time increased, pH of the fermentation medium significantly decreased (P<0.05). Furthermore, glutamic acid concentration in fermentation medium increased significantly (P<0.05). The highest amount of the glutamic acid obtained was 5.6 g/l on the forth day of fermentation.

Keywords: Brevibacterium linens, Fermentation, Glutamicacid, Thin layer choromatography

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275 Sensing Characteristics to Acid Vapors of a TPPS Coated Fiber Optic: A Preliminary Analysis

Authors: A. Bahrampour, A. Iadicicco, G. De Luca, M. Giordano, A. Cutolo, L. Monsù Scolaro, A. Cusano

Abstract:

In this work we report on preliminary analysis of a novel optoelectronic gas sensor based on an optical fiber integrated with a tetrakis(4-sulfonatophenyl)porphyrin (TPPS) thin film. The sensitive materials are selectively deposited on the core region of a fiber tip by UV light induced deposition technique. A simple and cheap process which can be easily extended to different porphyrin derivatives. When the TPPS film on the fiber tip is exposed to acid and/or base vapors, dramatic changes occur in the aggregation structure of the dye molecules in the film, from J- to H-type, resulting in a profound modification of their corresponding reflectance spectra. From the achieved experimental results it is evident that the presence of intense and narrow band peaks in the reflected spectra could be monitored to detect hazardous vapors.

Keywords: Optical fiber sensor, Porphyrins, Thin films UV induced deposition, TPPS.

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274 Nanocrystalline Na0.1V2O5.nH2O Xerogel Thin Film for Gas Sensing

Authors: M. S. Al-Assiri, M. M. El-Desoky, Ahmed A. Ibrahim, M. Abaker, A. A. Bahgat

Abstract:

Nanocrystalline thin film of Na0.1V2O5.nH2O xerogel obtained by sol gel synthesis was used as gas sensor. Gas sensing properties of different gases such as hydrogen, petroleum and humidity were investigated. Applying XRD and TEM the size of the nanocrystals is found to be 7.5 nm. SEM shows a highly porous structure with submicron meter-sized voids present throughout the sample. FTIR measurement shows different chemical groups identifying the obtained series of gels. The sample was n-type semiconductor according to the thermoelectric power and electrical conductivity. It can be seen that the sensor response curves from 130oC to 150oC show a rapid increase in sensitivity for all types of gas injection, low response values for heating period and the rapid high response values for cooling period. This result may suggest that this material is able to act as gas sensor during the heating and cooling process.

Keywords: Sol gel, Thermoelectric power, XRD, TEM, Gas sensing.

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273 A Comparative Study of Electrical Transport Phenomena in Ultrathin vs. Nanoscale SOI MOSFETs Devices

Authors: A. Karsenty, A. Chelly

Abstract:

Ultrathin (UTD) and Nanoscale (NSD) SOI-MOSFET devices, sharing a similar W/L but with a channel thickness of 46nm and 1.6nm respectively, were fabricated using a selective “gate recessed” process on the same silicon wafer. The electrical transport characterization at room temperature has shown a large difference between the two kinds of devices and has been interpreted in terms of a huge unexpected series resistance. Electrical characteristics of the Nanoscale device, taken in the linear region, can be analytically derived from the ultrathin device ones. A comparison of the structure and composition of the layers, using advanced techniques such as Focused Ion Beam (FIB) and High Resolution TEM (HRTEM) coupled with Energy Dispersive X-ray Spectroscopy (EDS), contributes an explanation as to the difference of transport between the devices.

Keywords: Nanoscale Devices, SOI MOSFET, Analytical Model, Electron Transport.

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