@article{(Open Science Index):https://publications.waset.org/pdf/9998912, title = {Interfacial Layer Effect on Novel p-Ni1-xO:Li/n-Si Heterojunction Solar Cells }, author = {Feng-Hao Hsu and Na-Fu Wang and Yu-Zen Tsai and Yu-Song Cheng and Cheng-Fu Yang and Mau-Phon Houng}, country = {}, institution = {}, abstract = {This study fabricates p-type Ni1−xO:Li/n-Si heterojunction solar cells (P+/n HJSCs) by using radio frequency (RF) magnetron sputtering and investigates the effect of substrate temperature on photovoltaic cell properties. Grazing incidence x-ray diffraction, four point probe, and ultraviolet-visible-near infrared discover the optoelectrical properties of p-Ni1-xO thin films. The results show that p-Ni1-xO thin films deposited at 300 oC has the highest grain size (22.4 nm), average visible transmittance (~42%), and electrical resistivity (2.7 Ωcm). However, the conversion efficiency of cell is shown only 2.33% which is lower than the cell (3.39%) fabricated at room temperature. This result can be mainly attributed to interfacial layer thickness (SiOx) reduces from 2.35 nm to 1.70 nm, as verified by high-resolution transmission electron microscopy. }, journal = {International Journal of Physical and Mathematical Sciences}, volume = {8}, number = {7}, year = {2014}, pages = {683 - 686}, ee = {https://publications.waset.org/pdf/9998912}, url = {https://publications.waset.org/vol/91}, bibsource = {https://publications.waset.org/}, issn = {eISSN: 1307-6892}, publisher = {World Academy of Science, Engineering and Technology}, index = {Open Science Index 91, 2014}, }