%0 Journal Article
	%A Feng-Hao Hsu and  Na-Fu Wang and  Yu-Zen Tsai and  Yu-Song Cheng and  Cheng-Fu Yang and  Mau-Phon Houng
	%D 2014
	%J International Journal of Physical and Mathematical Sciences
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 91, 2014
	%T Interfacial Layer Effect on Novel p-Ni1-xO:Li/n-Si Heterojunction Solar Cells 
	%U https://publications.waset.org/pdf/9998912
	%V 91
	%X This study fabricates p-type Ni1−xO:Li/n-Si heterojunction solar cells (P+/n HJSCs) by using radio frequency (RF) magnetron sputtering and investigates the effect of substrate temperature on photovoltaic cell properties. Grazing incidence x-ray diffraction, four point probe, and ultraviolet-visible-near infrared discover the optoelectrical properties of p-Ni1-xO thin films. The results show that p-Ni1-xO thin films deposited at 300 oC has the highest grain size (22.4 nm), average visible transmittance (~42%), and electrical resistivity (2.7 Ωcm). However, the conversion efficiency of cell is shown only 2.33% which is lower than the cell (3.39%) fabricated at room temperature. This result can be mainly attributed to interfacial layer thickness (SiOx) reduces from 2.35 nm to 1.70 nm, as verified by high-resolution transmission electron microscopy.

	%P 683 - 686