Search results for: CMOS amplifier

Authors: Abbas Ali Mahmood Karwi

Abstract:

For gamma radiation detection, assemblies having scintillation crystals and a photomultiplier tube, also there is a preamplifier connected to the detector because the signals from photomultiplier tube are of small amplitude. After pre-amplification the signals are sent to the amplifier and then to the multichannel analyser. The multichannel analyser sorts all incoming electrical signals according to their amplitudes and sorts the detected photons in channels covering small energy intervals. The energy range of each channel depends on the gain settings of the multichannel analyser and the high voltage across the photomultiplier tube. The exit spectrum data of the two main isotopes studied ,putting data in biomass program ,process it by Matlab program to get the solid holdup image (solid spherical nuclear fuel)

Keywords: Multichannel analyzer, Spectrum, Energies, Fluids holdup, Image

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Authors: Shubhajit Roy Chowdhury, Aritra Banerjee, Aniruddha Roy, Hiranmay Saha

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The paper proposes the novel design of a 3T XOR gate combining complementary CMOS with pass transistor logic. The design has been compared with earlier proposed 4T and 6T XOR gates and a significant improvement in silicon area and power-delay product has been obtained. An eight transistor full adder has been designed using the proposed three-transistor XOR gate and its performance has been investigated using 0.15um and 0.35um technologies. Compared to the earlier designed 10 transistor full adder, the proposed adder shows a significant improvement in silicon area and power delay product. The whole simulation has been carried out using HSPICE.

Keywords: XOR gate, full adder, improvement in speed, area minimization, transistor count minimization.

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Authors: Kah-Hyong Chang, Xin Liu, Jia Hao Cheong, Saisundar Sankaranarayanan, Dexing Pang, Hongzhao Zheng

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A digital baseband Application-Specific Integrated Circuit (ASIC) (yclic Redundancy Checkis developed for a microchip transponder to transmit signals and temperature levels from biomedical monitoring devices. The transmission protocol is adapted from the ISO/IEC 11784/85 standard. The module has a decimation filter that employs only a single adder-subtractor in its datapath. The filtered output is coded with cyclic redundancy check and transmitted through backscattering Load Shift Keying (LSK) modulation to a reader. Fabricated using the 0.18-μm CMOS technology, the module occupies 0.116 mm² in chip area (digital baseband: 0.060 mm², decimation filter: 0.056 mm²), and consumes a total of less than 0.9 μW of power (digital baseband: 0.75 μW, decimation filter: 0.14 μW).

Keywords: Biomedical sensor, decimation filter, Radio Frequency Integrated Circuit (RFIC) baseband, temperature sensor.

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Authors: C. Chanapromma, T. Worachak, P. Silapan

Abstract:

This paper presents positive and negative full-wave rectifier. The proposed structure is based on OTA using commercially available ICs (LT1228). The features of the proposed circuit are that: it can rectify and amplify voltage signal with controllable output magnitude via input bias current: the output voltage is free from temperature variation. The circuit description merely consists of 1 single ended and 3 fully differential OTAs. The performance of the proposed circuit are investigated though PSpice. They show that the proposed circuit can function as positive/negative full-wave rectifier, where the voltage input wide-dynamic range from -5V to 5V. Furthermore, the output voltage is slightly dependent on the temperature variations.

Keywords: Full-wave rectifier, Positive/negative, OTA, Electronically controllable, Wide-dynamic range

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Authors: JanuszKwaśniewski, IreneuszDominik, KrzysztofLalik

Abstract:

The knowledge about rock layers thickness,especially above drilled mining pavements is crucial for workers safety. The measuring systems used nowadays are generally imperfect and there is a strong demand for improvement. The application of a new type of a measurement system called Self-excited Acoustical System is presentedin the paper. The system was applied until now to monitor stress changes in metal and concrete constructions. The change in measurement methodology resulted in possibility of measuring the thickness of the rocks above the tunnels as well as thickness of a singular rocklayer. The idea is to find two resonance frequencies of the self-exited system,which consists of a vibration exciter and vibration receiver placed at a distance, which are coupled with a proper power amplifier, and which operate in a closed loop with a positive feedback. The resonance with the higher amplitude determines thickness of the whole rock, whereas the lower amplitude resonance indicates thickness of a singular layer. The results of the laboratory tests conducted on a group of different rock materials are also presented.

Keywords: Autooscillator, non-destructive testing, rock thickness measurement.

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Authors: P.K. Sharma, B. Bhargava, S. Akashe

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Power dissipation due to leakage current in the digital circuits is a biggest factor which is considered specially while designing nanoscale circuits. This paper is exploring the ideas of reducing leakage current in static CMOS circuits by stacking the transistors in increasing numbers. Clearly it means that the stacking of OFF transistors in large numbers result a significant reduction in power dissipation. Increase in source voltage of NMOS transistor minimizes the leakage current. Thus stacking technique makes circuit with minimum power dissipation losses due to leakage current. Also some of digital circuits such as full adder, D flip flop and 6T SRAM have been simulated in this paper, with the application of reduction technique on ‘cadence virtuoso tool’ using specter at 45nm technology with supply voltage 0.7V.

Keywords: Stack, 6T SRAM cell, low power, threshold voltage

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Authors: Kritphon Phanruttanachai, Winai Jaikla

Abstract:

This article presents a current-mode quadrature oscillator using differential different current conveyor (DDCC) and voltage differencing transconductance amplifier (VDTA) as active elements. The proposed circuit is realized fro m a non-inverting lossless integrator and an inverting second order low-pass filter. The oscillation condition and oscillation frequency can be electronically/orthogonally controlled via input bias currents. The circuit description is very simple, consisting of merely 1 DDCC, 1 VDTA, 1 grounded resistor and 3 grounded capacitors. Using only grounded elements, the proposed circuit is then suitable for IC architecture. The proposed oscillator has high output impedance which is easy to cascade or dive the external load without the buffer devices. The PSPICE simulation results are depicted, and the given results agree well with the theoretical anticipation. The power consumption is approximately 1.76mW at ±1.25V supply voltages.

Keywords: Current-mode, oscillator, integrated circuit, DDCC, VDTA

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Authors: Hassan Faraji Baghtash

Abstract:

In this paper, a low voltage high performance current mirror is presented. Its most important specifications, which are improved in this work, are analyzed and formulated proving that it has such outstanding merits as: Very low input resistance of 26mΩ, very wide current dynamic range of 8 decades from 10pA to 1mA (160dB) together with an extremely low current copy error of less than 0.6ppm, and very low input and output voltages. Furthermore, the proposed current mirror bandwidth is 944MHz utilizing very low power consumption (267μW) and transistors count. HSPICE simulation results are performed using TSMC 0.18μm CMOS technology utilizing 1.8V single power supply, confirming the theoretically proved outstanding performance of the proposed current mirror. Monte Carlo simulation of its most important parameter is also examined showing its sufficiently resistance against technology process variations.

Keywords: Current mirror/source, high accuracy, low voltage, wide dynamic range.

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Authors: S. Abdollahi Pour, M. Saneei

Abstract:

This paper propose a new circuit design which monitor total leakage current during standby mode and generates the optimal reverse body bias voltage, by using the adaptive body bias (ABB) technique to compensate die-to-die parameter variations. Design details of power monitor are examined using simulation framework in 65nm and 32nm BTPM model CMOS process. Experimental results show the overhead of proposed circuit in terms of its power consumption is about 10 μW for 32nm technology and about 12 μW for 65nm technology at the same power supply voltage as the core power supply. Moreover the results show that our proposed circuit design is not far sensitive to the temperature variations and also process variations. Besides, uses the simple blocks which offer good sensitivity, high speed, the continuously feedback loop.

Keywords: leakage current, leakage power monitor, body biasing, low power

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Authors: Néjib Hassen, Thouraya Ettaghzouti, Kamel Besbes

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In this paper, a modified CCCII is presented. We have used a current mirror with low supply voltage. This circuit is operated at low supply voltage of ±1V. Tspice simulations for TSMC 0.18μm CMOS Technology has shown that the current and voltage bandwidth are respectively 3.34GHz and 4.37GHz, and parasitic resistance at port X has a value of 169.320 for a control current of 120μA. In order to realize this circuit, we have implemented in this first step a universal current mode filter where the frequency can reach the 134.58MHz. In the second step, we have implemented two simulated inductors: one floating and the other grounded. These two inductors are operated in high frequency and variable depending on bias current I0. Finally, we have used the two last inductors respectively to implement two sinusoidal oscillators domains of frequencies respectively: [470MHz, 692MHz], and [358MHz, 572MHz] for bias currents I0 [80μA, 350μA].

Keywords: Current controlled current conveyor CCCII, floating inductor, grounded inductor, oscillator, universal filter.

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Authors: Peter Drotar, Juraj Gazda, Pavol Galajda, Dusan Kocur

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The study in this paper underlines the importance of correct joint selection of the spreading codes for uplink of multicarrier code division multiple access (MC-CDMA) at the transmitter side and detector at the receiver side in the presence of nonlinear distortion due to high power amplifier (HPA). The bit error rate (BER) of system for different spreading sequences (Walsh code, Gold code, orthogonal Gold code, Golay code and Zadoff-Chu code) and different kinds of receivers (minimum mean-square error receiver (MMSE-MUD) and microstatistic multi-user receiver (MSF-MUD)) is compared by means of simulations for MC-CDMA transmission system. Finally, the results of analysis will show, that the application of MSF-MUD in combination with Golay codes can outperform significantly the other tested spreading codes and receivers for all mostly used models of HPA.

Keywords: HPA, MC-CDMA, microstatistic filter, multi-user receivers, PAPR.

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Authors: Shilpi Lavania

Abstract:

As the frequency of operation has attained a range of GHz and signal rise time continues to increase interconnect technology is suffering due to various high frequency effects as well as ground bounce problem. In some recent studies a high frequency effect i.e. skin effect has been modeled and its drawbacks have been discussed. This paper strives to make an impression on the advantage side of modeling skin effect for interconnect line. The proposed method has considered a CMOS with RC interconnect. Delay and noise considering ground bounce problem and with skin effect are discussed. The simulation results reveal an advantage of considering skin effect for minimization of ground bounce problem during the working of the model. Noise and delay variations with temperature are also presented.

Keywords: Interconnect, Skin effect, Ground Bounce, Delay, Noise.

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Authors: Ki-Jin Kim, Sanghoon Park, K. H. Ahn

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A way of generating millimeter wave I/Q signal using inductive resonator matched poly-phase filter is suggested. Normally the poly-phase filter generates quite accurate I/Q phase and magnitude but the loss of the filter is considerable due to series connection of passive RC components. This loss term directly increases system noise figure when the poly-phase filter is used in RF Front-end. The proposed matching method eliminates above mentioned loss and in addition provides gain on the passive filter. The working algorithm is illustrated by mathematical analysis. The generated I/Q signal is used in implementing millimeter wave phase shifter for the 60 GHz communication system to verify its effectiveness. The circuit is fabricated in 90 nm TSMC RF CMOS process under 1.2 V supply voltage. The measurement results showed that the suggested method improved gain by 6.5 dB and noise by 2.3 dB. The summary of the proposed I/Q generation is compared with previous works.

Keywords: Millimeter Wave Circuits, Local Distribution, I/Q Generator.

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Authors: S. Mohamed Rabeek, Mi Kyoung Park, M. Annamalai Arasu

Abstract:

This paper presents a design of a wireless read out system for tracking the frequency shift of the polymer coated piezoelectric micro electromechanical resonator due to gas absorption. The measure of this frequency shift indicates the percentage of a particular gas the sensor is exposed to. It is measured using an oscillator and an FPGA based frequency counter by employing the resonator as a frequency determining element in the oscillator. This system consists of a Gas Sensing Wireless Readout (GSWR) and an USB Wireless Transceiver (UWT). GSWR consists of an oscillator based on a trans-impedance sustaining amplifier, an FPGA based frequency readout, a sub 1GHz wireless transceiver and a micro controller. UWT can be plugged into the computer via USB port and function as a wireless module to transfer gas sensor data from GSWR to the computer through its USB port. GUI program running on the computer periodically polls for sensor data through UWT - GSWR wireless link, the response from GSWR is logged in a file for post processing as well as displayed on screen.

Keywords: Gas sensor, GSWR, micro-mechanical system, UWT, volatile emissions.

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Authors: Khalil Monfaredi, Hassan Faraji Baghtash, Majid Abbasi

Abstract:

In this paper a novel high output impedance, low input impedance, wide bandwidth, very simple current mirror with input and output voltage requirements less than that of a simple current mirror is presented. These features are achieved with very simple structure avoiding extra large node impedances to ensure high bandwidth operation. The circuit's principle of operation is discussed and compared to simple and low voltage cascode (LVC) current mirrors. Such outstanding features of this current mirror as high output impedance ~384K, low input impedance~6.4, wide bandwidth~178MHz, low input voltage ~ 362mV, low output voltage ~ 38mV and low current transfer error ~4% (all at 50μA) makes it an outstanding choice for high performance applications. Simulation results in BSIM 0.35μm CMOS technology with HSPICE are given in comparison with simple, and LVC current mirrors to verify and validate the performance of the proposed current mirror.

Keywords: Analog circuits, Current mirror, high frequency, Low power, Low voltage.

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Authors: Sanjay Singh, M Sathish Kumar, H. S Mruthyunjaya

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Multicarrier transmission system such as Orthogonal Frequency Division Multiplexing (OFDM) is a promising technique for high bit rate transmission in wireless communication systems. OFDM is a spectrally efficient modulation technique that can achieve high speed data transmission over multipath fading channels without the need for powerful equalization techniques. A major drawback of OFDM is the high Peak-to-Average Power Ratio (PAPR) of the transmit signal which can significantly impact the performance of the power amplifier. In this paper we have compared the PAPR reduction performance of Golay and Reed-Muller coded OFDM signal. From our simulation it has been found that the PAPR reduction performance of Golay coded OFDM is better than the Reed-Muller coded OFDM signal. Moreover, for the optimum PAPR reduction performance, code configuration for Golay and Reed-Muller codes has been identified.

Keywords: OFDM, PAPR, Perfect Codes, Golay Codes, Reed-Muller Codes

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Authors: P.Ramanathan, P.T.Vanathi

Abstract:

Parallel Prefix addition is a technique for improving the speed of binary addition. Due to continuing integrating intensity and the growing needs of portable devices, low-power and highperformance designs are of prime importance. The classical parallel prefix adder structures presented in the literature over the years optimize for logic depth, area, fan-out and interconnect count of logic circuits. In this paper, a new architecture for performing 8-bit, 16-bit and 32-bit Parallel Prefix addition is proposed. The proposed prefix adder structures is compared with several classical adders of same bit width in terms of power, delay and number of computational nodes. The results reveal that the proposed structures have the least power delay product when compared with its peer existing Prefix adder structures. Tanner EDA tool was used for simulating the adder designs in the TSMC 180 nm and TSMC 130 nm technologies.

Keywords: Parallel Prefix Adder (PPA), Dot operator, Semi-Dotoperator, Complementary Metal Oxide Semiconductor (CMOS), Odd-dot operator, Even-dot operator, Odd-semi-dot operator andEven-semi-dot operator.

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Authors: Bilel Gassara, Mahmoud Abdellaoui, Nouri Masmoud

Abstract:

The 4G front-end transceiver needs a high performance which can be obtained mainly with an optimal architecture and a multi-band Local Oscillator. In this study, we proposed and presented a new architecture of multi-band frequency synthesizer based on an Inverse Sine Phase Detector Phase Locked Loop (ISPD PLL) without any filters and any controlled gain block and associated with adapted multi band LC tuned VCO using a several numeric controlled capacitive branches but not binary weighted. The proposed architecture, based on 0.35μm CMOS process technology, supporting Multi-band GSM/DCS/DECT/ UMTS/WiMax application and gives a good performances: a phase noise @1MHz -127dBc and a Factor Of Merit (FOM) @ 1MHz - 186dB and a wide band frequency range (from 0.83GHz to 3.5GHz), that make the proposed architecture amenable for monolithic integration and 4G multi-band application.

Keywords: GSM/DCS/DECT/UMTS/WiMax, ISPD PLL, keep and capture range, Multi-Band, Synthesizer, Wireless.

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Authors: Deogratius Musiige, François Anton, Vital Yatskevich, Laulagnet Vincent, Darka Mioc, Nguyen Pierre

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This paper presents a methodology towards the emulation of the electrical power consumption of the RF device during the cellular phone/handset transmission mode using the LTE technology. The emulation methodology takes the physical environmental variables and the logical interface between the baseband and the RF system as inputs to compute the emulated power dissipation of the RF device. The emulated power, in between the measured points corresponding to the discrete values of the logical interface parameters is computed as a polynomial interpolation using polynomial basis functions. The evaluation of polynomial and spline curve fitting models showed a respective divergence (test error) of 8% and 0.02% from the physically measured power consumption. The precisions of the instruments used for the physical measurements have been modeled as intervals. We have been able to model the power consumption of the RF device operating at 5MHz using homotopy between 2 continuous power consumptions of the RF device operating at the bandwidths 3MHz and 10MHz.

Keywords: Radio frequency, high power amplifier, baseband, LTE, power, emulation, homotopy, interval analysis, Tx power, register-transfer level.

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Authors: M. Fadlallah, G. Ghibaudo, C. G. Theodorou

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The dynamic variation in memory devices such as the Static Random Access Memory can give errors in read or write operations. In this paper, the effect of low-frequency and random telegraph noise on the dynamic variation of one SRAM cell is detailed. The effect on circuit noise, speed, and length of time of processing is examined, using the Supply Read Retention Voltage and the Read Static Noise Margin. New test run methods are also developed. The obtained results simulation shows the importance of noise caused by dynamic variation, and the impact of Random Telegraph noise on SRAM variability is examined by evaluating the statistical distributions of Random Telegraph noise amplitude in the pull-up, pull-down. The threshold voltage mismatch between neighboring cell transistors due to intrinsic fluctuations typically contributes to larger reductions in static noise margin. Also the contribution of each of the SRAM transistor to total dynamic variation has been identified.

Keywords: Low-frequency noise, Random Telegraph Noise, Dynamic Variation, SRRV.

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Authors: Jun Sung Go, Jong Kang Park, Jong Tae Kim

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As semi-conductor manufacturing technology evolves; the single event transient problem becomes more significant issue. Single event transient has a critical impact on both combinational and sequential logic circuits, so it is important to evaluate the soft error tolerance of the circuits at the design stage. In this paper, we present a soft error detecting simulation using scan chain. The simulation model generates a single event transient randomly in the circuit, and detects the soft error during the execution of the test patterns. We verified this model by inserting a scan chain in an 8051 microprocessor using 65 nm CMOS technology. While the test patterns generated by ATPG program are passing through the scan chain, we insert a single event transient and detect the number of soft errors per sub-module. The experiments show that the soft error rates per cell area of the SFR module is 277% larger than other modules.

Keywords: Scan chain, single event transient, soft error, 8051 processor.

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Authors: Kittipong Tripetch, Nobuhiko Nakano

Abstract:

Two types of floating active resistors based on a complementary regulated cascode topology with cross-coupled regulated transistors are presented in this paper. The first topology is a high swing complementary regulated cascode active resistor. The second topology is a complementary common gate with a regulated cross coupled transistor. The small-signal input resistances of the floating resistors are derived. Three graphs of the input current versus the input voltage for different aspect ratios are designed and plotted using the Cadence Spectre 0.18-µm Rohm Semiconductor process. The total harmonic distortion graphs are plotted for three different aspect ratios with different input-voltage amplitudes and different input frequencies. From the simulation results, it is observed that a resistance of approximately 8.52 MΩ can be obtained from supply voltage at  ±0.9 V.

Keywords: Complementary common gate, complementary regulated cascode, current mirror, floating active resistors.

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Authors: Chang Soo Kang, In Ho Im, Sergey Churayev, Timour Paltashev

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This paper describes the design of new method of propagation delay measurement in micro and nanostructures during characterization of ASIC standard library cell. Providing more accuracy timing information about library cell to the design team we can improve a quality of timing analysis inside of ASIC design flow process. Also, this information could be very useful for semiconductor foundry team to make correction in technology process. By comparison of the propagation delay in the CMOS element and result of analog SPICE simulation. It was implemented as digital IP core for semiconductor manufacturing process. Specialized method helps to observe the propagation time delay in one element of the standard-cell library with up-to picoseconds accuracy and less. Thus, the special useful solutions for VLSI schematic to parameters extraction, basic cell layout verification, design simulation and verification are announced.

Keywords: phase error accumulation methodology, gatepropagation delay, Processor Testing, MEMS Testing

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Authors: Ahmed Shariful Alam, Abu Hena M. Mustafa Kamal, M. Abdul Rahman, M. Nasmus Sakib Khan Shabbir, Atiqul Islam

Abstract:

According to the rules of quantum mechanics there is a non-vanishing probability of for an electron to tunnel through a thin insulating barrier or a thin capacitor which is not possible according to the laws of classical physics. Tunneling of electron through a thin insulating barrier or tunnel junction is a random event and the magnitude of current flowing due to the tunneling of electron is very low. As the current flowing through a Single Electron Transistor (SET) is the result of electron tunneling through tunnel junctions of its source and drain the supply voltage requirement is also very low. As a result, the power consumption across a Single Electron Transistor is ultra-low in comparison to that of a MOSFET. In this paper simulations have been done with PSPICE for an inverter built with both SETs and MOSFETs. 35mV supply voltage was used for a SET built inverter circuit and the supply voltage used for a CMOS inverter was 3.5V.

Keywords: ITRS, enhancement type MOSFET, island, DC analysis, transient analysis, power consumption, background charge co-tunneling.

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Authors: Somaye Abdollahi Pour, Mohsen Saneei

Abstract:

This paper describes a novel monitoring scheme to minimize total active power in digital circuits depend on the demand frequency, by adjusting automatically both supply voltage and threshold voltages based on circuit operating conditions such as temperature, process variations, and desirable frequency. The delay monitoring results, will be control and apply so as to be maintained at the minimum value at which the chip is able to operate for a given clock frequency. Design details of power monitor are examined using simulation framework in 32nm BTPM model CMOS process. Experimental results show the overhead of proposed circuit in terms of its power consumption is about 40 μW for 32nm technology; moreover the results show that our proposed circuit design is not far sensitive to the temperature variations and also process variations. Besides, uses the simple blocks which offer good sensitivity, high speed, the continuously feedback loop. This design provides up to 40% reduction in power consumption in active mode.

Keywords: active mode, delay monitor, body biasing, VDD scaling, low power.

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Authors: I Made Darmayuda, Zhou Jun, Krishna Mainali, Simon Ng Sheung Yan, Saisundar S, Eran Ofek

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Personnel protection devices are cardinal in safety hazard applications. They are widely used in home, office and in industry environments to reduce the risk of lethal shock to human being and equipment safety. This paper briefly reviews various personnel protection devices also describes the basic working principle of conventional ground fault circuit interrupter (GFCI) or ground fault isolator (GFI), its disadvantages and ways to overcome the disadvantages with solid-state relay (SSR) based GFI with ultrafast response up on fault implemented in printed circuit board. This solid state GFI comprises discrete MOSFET based alternating current (AC) switches, linear optical amplifier, photovoltaic isolator and sense resistor. In conventional GFI, current transformer is employed as a sensing element to detect the difference in current flow between live and neutral conductor. If there is no fault in equipment powered through GFI, due to insulation failure of internal wires and windings of motors, both live and neutral currents will be equal in magnitude and opposite in phase.

Keywords: current transformer, electrocution, GFCI, GFI

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Authors: Jingjing Lan, Jun Yu, Muthukumaraswamy Annamalai Arasu

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This paper presents a digital non-linear pulse-width modulation (PWM) controller in a high-voltage (HV) buck-boost DC-DC converter for the piezoelectric transducer of the down-hole acoustic telemetry system. The proposed design controls the generation of output signal with voltage higher than the supply voltage and is targeted to work under high temperature. To minimize the power consumption and silicon area, a simple and efficient design scheme is employed to develop the PWM controller. The proposed PWM controller consists of serial to parallel (S2P) converter, data assign block, a mode and duty cycle controller (MDC), linearly PWM (LPWM) and noise shaper, pulse generator and clock generator. To improve the reliability of circuit operation at higher temperature, this design is fabricated with the 1.0-μm silicon-on-insulator (SOI) CMOS process. The implementation results validated that the proposed design has the advantages of smaller size, lower power consumption and robust thermal stability.

Keywords: DC-DC power conversion, digital control, high temperatures, pulse-width modulation.

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Authors: Vijay Kumar Sharma, Manisha Pattanaik, Balwinder Raj

Abstract:

Minimizations of power dissipation, chip area with higher circuit performance are the necessary and key parameters in deep submicron regime. The leakage current increases sharply in deep submicron regime and directly affected the power dissipation of the logic circuits. In deep submicron region the power dissipation as well as high performance is the crucial concern since increasing importance of portable systems. Number of leakage reduction techniques employed to reduce the leakage current in deep submicron region but they have some trade-off to control the leakage current. ONOFIC approach gives an excellent agreement between power dissipation and propagation delay for designing the efficient CMOS logic circuits. In this article ONOFIC approach is compared with LECTOR technique and output results show that ONOFIC approach significantly reduces the power dissipation and enhance the speed of the logic circuits. The lower power delay product is the big outcome of this approach and makes it an influential leakage reduction technique.

Keywords: Deep submicron, Leakage Current, LECTOR, ONOFIC, Power Delay Product

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Authors: Jawad Ahmad, Hee-Jun Kim

Abstract:

This paper describes the design of a voltage based maximum power point tracker (MPPT) for photovoltaic (PV) applications. Of the various MPPT methods, the voltage based method is considered to be the simplest and cost effective. The major disadvantage of this method is that the PV array is disconnected from the load for the sampling of its open circuit voltage, which inevitably results in power loss. Another disadvantage, in case of rapid irradiance variation, is that if the duration between two successive samplings, called the sampling period, is too long there is a considerable loss. This is because the output voltage of the PV array follows the unchanged reference during one sampling period. Once a maximum power point (MPP) is tracked and a change in irradiation occurs between two successive samplings, then the new MPP is not tracked until the next sampling of the PV array voltage. This paper proposes an MPPT circuit in which the sampling interval of the PV array voltage, and the sampling period have been shortened. The sample and hold circuit has also been simplified. The proposed circuit does not utilize a microcontroller or a digital signal processor and is thus suitable for low cost and low power applications.

Keywords: Maximum power point tracker, Sample and hold amplifier, Sampling interval, Sampling period.

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Authors: Arash Azizi Mazreah, Mohammad T. Manzuri Shalmani, Hamid Barati, Ali Barati, Ali Sarchami

Abstract:

This paper proposes a low power SRAM based on five transistor SRAM cell. Proposed SRAM uses novel word-line decoding such that, during read/write operation, only selected cell connected to bit-line whereas, in conventional SRAM (CV-SRAM), all cells in selected row connected to their bit-lines, which in turn develops differential voltages across all bit-lines, and this makes energy consumption on unselected bit-lines. In proposed SRAM memory array divided into two halves and this causes data-line capacitance to reduce. Also proposed SRAM uses one bit-line and thus has lower bit-line leakage compared to CV-SRAM. Furthermore, the proposed SRAM incurs no area overhead, and has comparable read/write performance versus the CV-SRAM. Simulation results in standard 0.25μm CMOS technology shows in worst case proposed SRAM has 80% smaller dynamic energy consumption in each cycle compared to CV-SRAM. Besides, energy consumption in each cycle of proposed SRAM and CV-SRAM investigated analytically, the results of which are in good agreement with the simulation results.

Keywords: SRAM, write Operation, read Operation, capacitances, dynamic energy consumption.

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