Search results for: high breakdown voltage

Authors: Ahmed A. Al-Mudhafar, Ali A. Abduljabar, Hayder Jawad Albattat

Abstract:

This work suggests a microwave resonator sensor (MRS) device for measuring the oil’s breakdown voltage of high voltage transformers. A precise high-sensitivity sensor is designed and manufactured based on a microstrip split ring resonator (SRR). To improve the sensor sensitivity, a radio frequency (RF) amplifier of 30 dB gain is linked through a transmission line of 50Ω. The sensor operates at a microwave band (L) with a quality factor of 1.35 × 105 when it is loaded with an empty tube. In this work, the sensor has been tested with three samples of high voltage transformer oil of different ages (new, middle, and damaged) where the quality factor differs with each sample. A mathematical model was built to calculate the breakdown voltage of the transformer oils and the accuracy of the results was higher than 90%.

Keywords: Active resonator sensor, oil breakdown voltage, transformers oils, quality factor.

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Authors: Chia-Jui Yu, Chien-Ju Chen, Jyun-Hao Liao, Chia-Ching Wu, Meng-Chyi Wu

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In this letter, we demonstrate high-performance AlGaN/GaN planar Schottky barrier diodes (SBDs) on the silicon substrate with field plate structure for increasing breakdown voltage V_B. A low turn-on resistance R_ON (3.55 mΩ-cm²), low reverse leakage current (< 0.1 µA) at -100 V, and high reverse breakdown voltage V_B (> 1.1 kV) SBD has been fabricated. A virgin SBD exhibited a breakdown voltage (measured at 1 mA/mm) of 615 V, and with the field plate technology device exhibited a breakdown voltage (measured at 1 mA/mm) of 1525 V (the anode–cathode distance was L_AC = 40 µm). Devices without the field plate design exhibit a Baliga’s figure of merit of V_B²/ R_ON = 60.2 MW/cm², whereas devices with the field plate design show a Baliga’s figure of merit of V_B²/ R_ON = 340.9 MW/cm² (the anode–cathode distance was L_AC = 20 µm).

Keywords: AlGaN/GaN heterostructure, silicon substrate, Schottky barrier diode, high breakdown voltage, field plate, Baliga’s figure-of-merit.

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Authors: M. G. Rostedt, M. J. Hall, L. Shi, R. D. Matthews

Abstract:

Silicon substrates coated with multiwalled carbon nanotubes (MWCNTs) were experimentally investigated to determine spark breakdown voltages relative to uncoated surfaces, the degree of surface degradation associated with the spark discharge, and techniques to minimize the surface degradation. The results may be applicable to instruments or processes that use MWCNT as a means of increasing local electric field strength and where spark breakdown is a possibility that might affect the devices’ performance or longevity. MWCNTs were shown to reduce the breakdown voltage of a 1mm gap in air by 30-50%. The relative decrease in breakdown voltage was maintained over gap distances of 0.5 to 2mm and gauge pressures of 0 to 4 bar. Degradation of the MWCNT coated surfaces was observed. Several techniques to improve durability were investigated. These included: chromium and gold-palladium coatings, tube annealing, and embedding clusters of MWCNT in a ceramic matrix.

Keywords: Ionization sensor, spark, nanotubes, electrode, breakdown.

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Authors: Sabah I. Wais, Raghad Y. Mohammed, Sedki O. Yousif

Abstract:

The influence of axial magnetic field (B=0.48 T) on the variation of ionization efficiency coefficient h and secondary electron emission coefficient g with respect to reduced electric field E/P is studied at a new range of plane-parallel electrode spacing (0< d< 20 cm) and different nitrogen working pressure between 0.5-20 Pa. The axial magnetic field is produced from an inductive copper coil of radius 5.6 cm. The experimental data of breakdown voltage is adopted to estimate the mean Paschen curves at different working features. The secondary electron emission coefficient is calculated from the mean Paschen curve and used to determine the minimum breakdown voltage. A reduction of discharge voltage of about 25% is investigated by the applied of axial magnetic field. At high interelectrode spacing, the effect of axial magnetic field becomes more significant for the obtained values of h but it was less for the values of g.

Keywords: Paschen curve, Townsend coefficient, Secondaryelectron emission, Magnetic field, Minimum breakdown voltage.

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Authors: Shibesh Dutta, Sivaramakrishnan R., Sundar Gopalan, Balakrishnan Shankar

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MOSCAPs of various combinations of Hafnium oxide and Titanium oxide of varying thickness with Aluminum as gate electrode have been fabricated and electrically characterized. The effects of voltage stress on the I-V characteristics for prolonged time durations have been studied and compared. Results showed hard breakdown and negligible degradation of reliability under stress.

Keywords: breakdown, MOSCAP, voltage stress.

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Authors: C. Kocatepe, E. Taslak, C. F. Kumru, O. Arıkan

Abstract:

While choosing insulating oil, characteristic features such as thermal cooling, endurance, efficiency and being environment-friendly should be considered. Mineral oils are referred as petroleum-based oil. In this study, vegetable oils investigated as an alternative insulating liquid to mineral oil. Dissipation factor, breakdown voltage, relative dielectric constant and resistivity changes with the frequency and voltage of mineral, rapeseed and nut oils were measured. Experimental studies were performed according to ASTM D924 and IEC 60156 standards.

Keywords: Breakdown voltage, dielectric dissipation factor, mineral oil, vegetable oils.

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Authors: N. Sumathi, R. Srinivasa Rao

Abstract:

This paper presents the experimental results of 11 kV and 33 kV silicon composite insulators under artificial salt and urea polluted conditions. The tests were carried out under different seasons like summer, winter, and monsoon. The artificial pollution is prepared by properly dissolving the salt and urea in the water. The prepared salt and urea pollutions are sprayed on the insulators and dried up for sufficiently large time. The process is continued until a uniform layer is formed on the surface of insulator. For each insulator rating, four samples were tested. The maximum leakage current and breakdown voltage were measured. From experimental data, performance of test specimen is evaluated by comparing breakdown voltage and leakage current during different seasons when exposed to salt and urea polluted conditions. From these results the performance of the insulators can be predicted when they are installed in industrial, agricultural, and coastal areas. The experimental tests were carried out in the High Voltage laboratory using two stage cascade transformer having the rating of 1000 kVA, 500 kV.

Keywords: Silicon composite insulators, Urea pollution, Leakage current, Breakdown voltage, salt pollution, artificial pollution.

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Authors: Elyse Sili, Jean Pascal Cambronne

Abstract:

In aircraft applications, according to the nature of electrical equipment its location may be in unpressurized area or very close to the engine; thus, the environmental conditions may change from atmospheric pressure to less than 100 mbar, and the temperature may be higher than the ambient one as in most real working conditions of electrical equipment. Then, the classical Paschen curve has to be replotted since these parameters may affect the discharge ignition voltage. In this paper, we firstly investigate the domain of validity of two corrective expressions on the Paschen-s law found in the literature, in case of changing the air environment and known as Peek and Dunbar corrections. Results show that these corrections are no longer valid for combined variation of temperature and pressure. After that, a new empirical expression for breakdown voltage is proposed and is validated in the case of combined variations of temperature and pressure.

Keywords: Gas breakdown, gas density, Paschen curve, temperature effects

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Authors: Eka PW, T. Okazaki, Y. Murakami, N., Hozumi, M. Nagao

Abstract:

The breakdown strength characteristic of Low Density Polyethylene films (LDPE) under DC voltage application and the effect of water absorption have been studied. Mainly, our experiment was investigated under two conditions; dry and heavy water absorption. Under DC ramp voltage, the result found that the breakdown strength under heavy water absorption has a lower value than dry condition. In order to clarify the effect, the temperature rise of film was observed using non contact thermograph until the occurrence of the electrical breakdown and the conduction current of the sample was also measured in correlation with the thermograph measurement. From the observations, it was shown that under the heavy water absorption, the hot spot in the samples appeared at lower voltage. At the same voltage the temperature of the hot spot and conduction current was higher than that under the dry condition. The measurement result has a good correlation between the existence of a critical field for conduction current and thermograph observation. In case of the heavy water absorption, the occurrence of the threshold field was earlier than the dry condition as result lead to higher of conduction current and the temperature rise appears after threshold field was significantly increased in increasing of field. The higher temperature rise was caused by the higher current conduction as the result the insulation leads to breakdown to the lower field application.

Keywords: Low density polyethylene, heavy water absorption, conduction current, temperature rise.

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Authors: A. Rawangpai, B. Maraungsri, N. Chomnawang

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This paper presents the experimental results on artificial ageing test of 22 kV XLPE cable for distribution system application in Thailand. XLPE insulating material of 22 kV cable was sliced to 60-70 μm in thick and was subjected to ac high voltage at 23 Ôùª C, 60 Ôùª C and 75 Ôùª C. Testing voltage was constantly applied to the specimen until breakdown. Breakdown voltage and time to breakdown were used to evaluate life time of insulating material. Furthermore, the physical model by J. P. Crine for predicts life time of XLPE insulating material was adopted as life time model and was calculated in order to compare the experimental results. Acceptable life time results were obtained from Crine-s model comparing with the experimental result. In addition, fourier transform infrared spectroscopy (FTIR) for chemical analysis and scanning electron microscope (SEM) for physical analysis were conducted on tested specimens.

Keywords: Artificial accelerated ageing test, XLPE cable, distribution system, insulating material, life time, life time model

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Authors: E. Taslak, C. Kocatepe, O. Arıkan, C. F. Kumru

Abstract:

In insulation and cooling of power transformers various liquids are used. Mineral oils have wide availability and low cost. However, they have a poor biodegradability potential and lower fire point in comparison with other insulating liquids. Use of a liquid having high biodegradability is important due to environmental consideration. This paper investigates edible corn oil as an alternative to mineral oil. Various properties of mineral and corn oil like breakdown voltage, dissipation factor, relative dielectric constant, power loss and resistivity were measured according to different standards.

Keywords: Breakdown voltage, corn oil, dissipation factor, mineral oil, power loss, relative dielectric constant, resistivity.

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Authors: Fei Sun, Ning Duan, Guo-Qiang Lo

Abstract:

A silicon photomultiplier (SiPM) was designed, fabricated and characterized. The SiPM was based on SACM (Separation of Absorption, Charge and Multiplication) structure, which was optimized for blue light detection in application of positron emission tomography (PET). The achieved SiPM array has a high geometric fill factor of 64% and a low breakdown voltage of about 22V, while the temperature dependence of breakdown voltage is only 17mV/°C. The gain and photon detection efficiency of the device achieved were also measured under illumination of light at 405nm and 460nm wavelengths. The gain of the device is in the order of 10⁶. The photon detection efficiency up to 60% has been observed under 1.8V overvoltage.

Keywords: Photon Detection Efficiency, Positron Emission Tomography, Silicon Photomultiplier.

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Authors: Hee-Guk Chae, Bo-Bae Song, Kyoung-Il Do, Jeong-Yun Seo, Yong-Seo Koo

Abstract:

In this study, an improved Electrostatic Discharge (ESD) protection circuit with low trigger voltage and high holding voltage is proposed. ESD has become a serious problem in the semiconductor process because the semiconductor density has become very high these days. Therefore, much research has been done to prevent ESD. The proposed circuit is a stacked structure of the new unit structure combined by the Zener Triggering (SCR ZTSCR) and the High Holding Voltage SCR (HHVSCR). The simulation results show that the proposed circuit has low trigger voltage and high holding voltage. And the stack technology is applied to adjust the various operating voltage. As the results, the holding voltage is 7.7 V for 2-stack and 10.7 V for 3-stack.

Keywords: ESD, SCR, latch-up, power clamp, holding voltage.

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Authors: A. Ahadpour Shal, A. Ghadimi, A. Azadbar

Abstract:

In this paper a new method for increasing the speed of SAGCM-APD is proposed. Utilizing carrier rate equations in different regions of the structure, a circuit model for the structure is obtained. In this research, in addition to frequency response, the effect of added new charge layer on some transient parameters like slew-rate, rising and falling times have been considered. Finally, by trading-off among some physical parameters such as different layers widths and droppings, a noticeable decrease in breakdown voltage has been achieved. The results of simulation, illustrate some features of proposed structure improvement in comparison with conventional SAGCM-APD structures.

Keywords: Optical communication systems (OCS), Circuit modeling, breakdown voltage, SAGCM APD

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Authors: Kyoung-il Do, Byung-seok Lee, Hee-guk Chae, Jeong-yun Seo Yong-seo Koo

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In this paper, a Silicon Controlled Rectifier (SCR)-based Electrostatic Discharge (ESD) protection circuit with high holding voltage and high robustness characteristics is proposed. Unlike conventional SCR, the proposed circuit has low trigger voltage and high holding voltage and provides effective ESD protection with latch-up immunity. In addition, the TCAD simulation results show that the proposed circuit has better electrical characteristics than the conventional SCR. A stack technology was used for voltage-specific applications. Consequentially, the proposed circuit has a trigger voltage of 17.60 V and a holding voltage of 3.64 V.

Keywords: ESD, SCR, latch-up, power clamp, holding voltage.

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Authors: Bo Bae Song, Byung Seok Lee, Hyun Young Kim, Chung Kwang Lee, Yong Seo Koo

Abstract:

This paper proposed a silicon controller rectifier (SCR) based ESD protection device to protect low voltage ESD for integrated circuit. The proposed ESD protection device has low trigger voltage and high holding voltage compared with conventional SCR-based ESD protection devices. The proposed ESD protection circuit is verified and compared by TCAD simulation. This paper verified effective low voltage ESD characteristics with low trigger voltage of 5.79V and high holding voltage of 3.5V through optimization depending on design variables (D1, D2, D3 and D4).

Keywords: ESD, SCR, Holding voltage, Latch-up.

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Authors: Kimberly Jane S. Uy, Patricia Angela Reyes-Abu, Wen Yaw Chung

Abstract:

A high precision temperature insensitive current and voltage reference generator is presented. It is specifically developed for temperature compensated oscillator. The circuit, designed using MXIC 0.5um CMOS technology, has an operating voltage that ranges from 2.6V to 5V and generates a voltage of 1.21V and a current of 6.38 ӴA. It exhibits a variation of ±0.3nA for the current reference and a stable output for voltage reference as the temperature is varied from 0°C to 70°C. The power supply rejection ratio obtained without any filtering capacitor at 100Hz and 10MHz is -30dB and -12dB respectively.

Keywords: Current reference, voltage reference, threshold voltage, temperature compensation, mobility.

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Authors: Hyun-Young Kim, Chung-Kwang Lee, Han-Hee Cho, Sang-Woon Cho, Yong-Seo Koo

Abstract:

In this paper, we proposed a novel SCR (Silicon Controlled Rectifier) - based ESD (Electrostatic Discharge) protection device for I/O and power clamp. The proposed device has a higher holding voltage characteristic than conventional SCR. These characteristics enable to have latch-up immunity under normal operating conditions as well as superior full chip ESD protection. The proposed device was analyzed to figure out electrical characteristics and tolerance robustness in term of individual design parameters (D1, D2, D3). They are investigated by using the Synopsys TCAD simulator. As a result of simulation, holding voltage increased with different design parameters. The holding voltage of the proposed device changes from 3.3V to 7.9V. Also, N-Stack structure ESD device with the high holding voltage is proposed. In the simulation results, 2-stack has holding voltage of 6.8V and 3-stack has holding voltage of 10.5V. The simulation results show that holding voltage of stacking structure can be larger than the operation voltage of high-voltage application.

Keywords: ESD, SCR, holding voltage, stack, power clamp.

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Authors: Neeraj K. Chasta

Abstract:

This paper presents an idea for analog current comparison which compares input signal and reference currents with high speed and accuracy. Proposed circuit utilizes amplification properties of common gate configuration, where voltage variations of input current are amplified and a compared output voltage is developed. Cascaded inverter stages are used to generate final CMOS compatible output voltage. Power consumption of circuit can be controlled by the applied gate bias voltage. The comparator is designed and studied at 180nm CMOS process technology for a supply voltage of 3V.

Keywords: Current Mode, Comparator, High Resolution, High Speed.

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Authors: Yong Seo Koo, Jong Ho Nam, Yong Nam Choi, Dae Yeol Yoo, Jung Woo Han

Abstract:

This paper presents a silicon controller rectifier (SCR) based ESD protection circuit for IC. The proposed ESD protection circuit has low trigger voltage and high holding voltage compared with conventional SCR ESD protection circuit. Electrical characteristics of the proposed ESD protection circuit are simulated and analyzed using TCAD simulator. The proposed ESD protection circuit verified effective low voltage ESD characteristics with low trigger voltage and high holding voltage.

Keywords: ESD (Electro-Static Discharge), SCR (Silicon Controlled Rectifier), holding Voltage.

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Authors: Abdar Ali, Rizwan Ullah, Zahid Ullah

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This paper focuses on the study of DC-to-DC converters, which are suitable for low-voltage high-power applications. The output voltages generated by renewable energy sources such as photovoltaic arrays and fuel cell stacks are generally low and required to be increased to high voltage levels. Development of DC-to-DC converters, which provide high step-up voltage conversion ratios with high efficiencies and low voltage stresses, is one of the main issues in the development of renewable energy systems. A procedure for three converters−conventional DC-to-DC converter, interleaved boost converter, and isolated flyback based converter, is illustrated for a given set of specifications. The selection among the converters for the given application is based on the voltage conversion ratio, efficiency, and voltage stresses.

Keywords: Flyback converter, interleaved boost, photovoltaic array, fuel cell, switch stress, voltage conversion ratio, renewable energy.

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Authors: Nur Syarafina Binti Othman, Tsubasa Jindo, Makato Yamada, Miho Tsuyama, Hitoshi Nakano

Abstract:

A novel method to produce a fast high voltage solid states switch using Insulated Gate Bipolar Transistors (IGBTs) is presented for discharge-pumped gas lasers. The IGBTs are connected in series to achieve a high voltage rating. An avalanche transistor is used as the gate driver. The fast pulse generated by the avalanche transistor quickly charges the large input capacitance of the IGBT, resulting in a switch out of a fast high-voltage pulse. The switching characteristic of fast-high voltage solid state switch has been estimated in the multi-stage series-connected IGBT with the applied voltage of several tens of kV. Electrical circuit diagram and the mythology of fast-high voltage solid state switch as well as experimental results obtained are presented.

Keywords: High voltage, IGBT, Solid states switch.

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Authors: A. Faruk Bakan, İsmail Aksoy, Nihan Altintaş

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In this paper, half bridge DC-DC converters with transformer isolation presented in the literature are analyzed for highcurrent and low-voltage applications under the same operation conditions, and compared in terms of losses and efficiency. The conventional and improved half-bridge DC-DC converters are simulated, and current and voltage waveforms are obtained for input voltage Vdc=500V, output current IO=450A, output voltage VO=38V and switching frequency fS=20kHz. IGBTs are used as power semiconductor switches. The power losses of the semiconductor devices are calculated from current and voltage waveforms. From simulation results, it is seen that the capacitor switched half bridge converter has the best efficiency value, and can be preferred at high power and high frequency applications.

Keywords: Isolated half bridge DC-DC converter, high-current low-voltage applications, soft switching, high efficiency.

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Authors: Yngvar Berg, Omid Mirmotahari

Abstract:

In this paper we ultra low-voltage and high speed CMOS domino logic. For supply voltages below 500mV the delay for a ultra low-voltage NAND2 gate is aproximately 10% of a complementary CMOS inverter. Furthermore, the delay variations due to mismatch is much less than for conventional CMOS. Differential domino gates for AND/NAND and OR/NOR operation are presented.

Keywords: Low-voltage, high-speed, NAND, NOR, CMOS.

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Authors: Ahmad Zahran, Ahmed Herzallah, Ahmad Ahmad, Mahran Quraan

Abstract:

Generation of high DC voltages is necessary for testing the insulation material of high voltage AC transmission lines with long lengths. The harmonic and ripple contents of the output DC voltage supplied by high voltage DC circuits require the use of costly capacitors to smooth the output voltage after rectification. This paper proposes a new modular multiplier high voltage DC generator with embedded Cockcroft-Walton circuits that achieve a negligible harmonic and ripple contents of the output DC voltage without the need for costly filters to produce a nearly constant output voltage. In this new topology, Cockcroft-Walton modules are connected in series to produce a high DC output voltage. The modules are supplied by low input AC voltage sources that have the same magnitude and frequency and shifted from each other by a certain angle to eliminate the harmonics from the output voltage. The small ripple factor is provided by the smoothing column capacitors and the phase shifted input voltages of the cascaded modules. The constituent harmonics within each module are determined using Fourier analysis. The viability of the proposed DC generator for testing purposes and the effectiveness of the cascaded connection are confirmed by numerical simulations using MATLAB/Simulink.

Keywords: Cockcroft-Walton circuit, Harmonics, Ripple factor, HVDC generator.

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Authors: Sh. Javadi, A. Alijani, A.H. Mazinan

Abstract:

This paper reviews the optimization available transmission capability (ATC) of power systems using a device of FACTS named SSSC equipped with energy storage devices. So that, emplacement and improvement of parameters of SSSC will be illustrated. Thus, voltage magnitude constraints of network buses, line transient stability constraints and voltage breakdown constraints are considered. To help the calculations, a comprehensive program in DELPHI is provided, which is able to simulate and trace the parameters of SSSC has been installed on a specific line. Furthermore, the provided program is able to compute ATC, TTC and maximum value of their enhancement after using SSSC.

Keywords: available transmission capability (ATC), total transmission capability (TTC), voltage constraints, stability constraints, FACTS, SSSC.

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Authors: M. Nageswara Rao

Abstract:

In this paper, a topology for high voltage gain half-bridge z-source inverter with low voltage stress on capacitors is proposed. The proposed inverter has only one impedance network. It can generate symmetric and asymmetric voltages with different magnitudes during both half-cycles. By selecting the duty cycle it can also produce conventional half-bridge inverter characteristics. It is used in special applications like, electrochemical and electro plating applications. Calculations of voltage ripple of capacitors, capacitors voltage stress inductors current ripple are presented. The proposed topology is simulated using PSCAD software and the simulated values are compared with the theoretical values.

Keywords: Half-bridge inverter, impedance network-source inverter, high voltage gain inverter, power system computer aided design.

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Authors: Khalil Monfaredi, Hassan Faraji Baghtash, Majid Abbasi

Abstract:

In this paper a novel high output impedance, low input impedance, wide bandwidth, very simple current mirror with input and output voltage requirements less than that of a simple current mirror is presented. These features are achieved with very simple structure avoiding extra large node impedances to ensure high bandwidth operation. The circuit's principle of operation is discussed and compared to simple and low voltage cascode (LVC) current mirrors. Such outstanding features of this current mirror as high output impedance ~384K, low input impedance~6.4, wide bandwidth~178MHz, low input voltage ~ 362mV, low output voltage ~ 38mV and low current transfer error ~4% (all at 50μA) makes it an outstanding choice for high performance applications. Simulation results in BSIM 0.35μm CMOS technology with HSPICE are given in comparison with simple, and LVC current mirrors to verify and validate the performance of the proposed current mirror.

Keywords: Analog circuits, Current mirror, high frequency, Low power, Low voltage.

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Authors: Harun Gülan, Muhsin Tunay Gencoglu, Mehmet Cebeci

Abstract:

The main function of the insulators used in high voltage (HV) transmission lines is to insulate the energized conductor from the pole and hence from the ground. However, when the insulators fail to perform this insulation function due to various effects, failures occur. The deterioration of the insulation results either from breakdown or surface flashover. The surface flashover is caused by the layer of pollution that forms conductivity on the surface of the insulator, such as salt, carbonaceous compounds, rain, moisture, fog, dew, industrial pollution and desert dust. The source of the majority of failures and interruptions in HV lines is surface flashover. This threatens the continuity of supply and causes significant economic losses. Pollution flashover in HV insulators is still a serious problem that has not been fully resolved. In this study, a water jet test system has been established in order to investigate the behavior of insulators under dirty conditions and to determine their flashover performance. Flashover behavior of the insulators is examined by applying impulse voltages in the test system. This study aims to investigate the insulator behaviour under high impulse voltages. For this purpose, a water jet test system was installed and experimental results were obtained over a real system and analyzed. By using the water jet test system instead of the actual insulator, the damage to the insulator as a result of the flashover that would occur under impulse voltage was prevented. The results of the test system performed an important role in determining the insulator behavior and provided predictability.

Keywords: Insulator, pollution flashover, high impulse voltage, water jet model.

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Authors: M. Nassereddine, J. Rizk, G. Nasserddine

Abstract:

Performing High Voltage (HV) tasks with a multi craft work force create a special set of safety circumstances. This paper aims to present vital information relating to when it is acceptable to use a single or a two-layer soil structure. Also it discusses the implication of the high voltage infrastructure on the earth grid and the safety of this implication under a single or a two-layer soil structure. A multiple case study is investigated to show the importance of using the right soil resistivity structure during the earthing system design.

Keywords: Earth Grid, EPR, High Voltage, Soil Resistivity Structure, Step Voltage, Touch Voltage.

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