%0 Journal Article
	%A Nur Syarafina Binti Othman and  Tsubasa Jindo and  Makato Yamada and  Miho Tsuyama and  Hitoshi Nakano
	%D 2014
	%J International Journal of Electrical and Computer Engineering
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 96, 2014
	%T Fast High Voltage Solid State Switch Using Insulated Gate Bipolar Transistor for Discharge-Pumped Lasers
	%U https://publications.waset.org/pdf/9999918
	%V 96
	%X A novel method to produce a fast high voltage solid
states switch using Insulated Gate Bipolar Transistors (IGBTs) is
presented for discharge-pumped gas lasers. The IGBTs are connected
in series to achieve a high voltage rating. An avalanche transistor is
used as the gate driver. The fast pulse generated by the avalanche
transistor quickly charges the large input capacitance of the IGBT,
resulting in a switch out of a fast high-voltage pulse. The switching
characteristic of fast-high voltage solid state switch has been estimated
in the multi-stage series-connected IGBT with the applied voltage of
several tens of kV. Electrical circuit diagram and the mythology of
fast-high voltage solid state switch as well as experimental results
obtained are presented.

	%P 1876 - 1879