Kyoung-il Do and Byung-seok Lee and Hee-guk Chae and Jeong-yun Seo Yong-seo Koo
A Silicon Controlled RectifierBased ESD Protection Circuit with High Holding Voltage and High Robustness Characteristics
244 - 247
2018
12
3
International Journal of Electrical and Computer Engineering
https://publications.waset.org/pdf/10008991
https://publications.waset.org/vol/135
World Academy of Science, Engineering and Technology
In this paper, a Silicon Controlled Rectifier (SCR)based Electrostatic Discharge (ESD) protection circuit with high holding voltage and high robustness characteristics is proposed. Unlike conventional SCR, the proposed circuit has low trigger voltage and high holding voltage and provides effective ESD protection with latchup immunity. In addition, the TCAD simulation results show that the proposed circuit has better electrical characteristics than the conventional SCR. A stack technology was used for voltagespecific applications. Consequentially, the proposed circuit has a trigger voltage of 17.60 V and a holding voltage of 3.64 V.
Open Science Index 135, 2018