Search results for: Bipolar switching
312 Oxide Based Resistive Random Access Memory Device for High Density Non Volatile Memory Applications
Authors: Z. Fang, X. P. Wang, G. Q. Lo, D. L. Kwong
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In this work, we demonstrated vertical RRAM device fabricated at the sidewall of contact hole structures for possible future 3-D stacking integrations. The fabricated devices exhibit polarity dependent bipolar resistive switching with small operation voltage of less than 1V for both set and reset process. A good retention of memory window ~50 times is maintained after 1000s voltage bias.
Keywords: Bipolar switching, non volatile memory, resistive random access memory, 3-D stacking.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2197311 Efficiency Enhancement of PWM Controlled Water Electrolysis Cells
Authors: S.K. Mazloomi, Nasri b. Sulaiman
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By analyzing the sources of energy and power loss in PWM (Pulse Width Modulation) controlled drivers of water electrolysis cells, it is possible to reduce the power dissipation and enhance the efficiency of such hydrogen production units. A PWM controlled power driver is based on a semiconductor switching element where its power dissipation might be a remarkable fraction of the total power demand of an electrolysis system. Power dissipation in a semiconductor switching element is related to many different parameters which could be fitted into two main categories: switching losses and conduction losses. Conduction losses are directly related to the built, structure and capabilities of a switching device itself and indeed the conditions in which the element is handling the switching application such as voltage, current, temperature and of course the fabrication technology. On the other hand, switching losses have some other influencing variables other than the mentioned such as control system, switching method and power electronics circuitry of the PWM power driver. By analyzings the characteristics of recently developed power switching transistors from different families of Bipolar Junction Transistors (BJT), Metal Oxide Semiconductor Field Effect Transistors (MOSFET) and Insulated Gate Bipolar Transistors (IGBT), some recommendations are made in this paper which are able to lead to achieve higher hydrogen production efficiency by utilizing PWM controlled water electrolysis cells.Keywords: Power switch, PWM, Semiconductor switch, Waterelectrolysis
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 3471310 Integration of Resistive Switching Memory Cell with Vertical Nanowire Transistor
Authors: Xiang Li, Zhixian Chen, Zheng Fang, Aashit Kamath, Xinpeng Wang, Navab Singh, Guo-Qiang Lo, Dim-Lee Kwong
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We integrate TiN/Ni/HfO2/Si RRAM cell with a vertical gate-all-around (GAA) nanowire transistor to achieve compact 4F2 footprint in a 1T1R configuration. The tip of the Si nanowire (source of the transistor) serves as bottom electrode of the memory cell. Fabricated devices with nanowire diameter ~ 50nm demonstrate ultra-low current/power switching; unipolar switching with 10μA/30μW SET and 20μA/30μW RESET and bipolar switching with 20nA/85nW SET and 0.2nA/0.7nW RESET. Further, the switching current is found to scale with nanowire diameter making the architecture promising for future scaling.Keywords: RRAM, 1T1R, gate-all-around FET, nanowire FET, vertical MOSFETs
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2146309 Resistive Switching in TaN/AlNx/TiN Cell
Authors: Hsin-Ping Huang, Shyankay Jou
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Resistive switching of aluminum nitride (AlNx) thin film was demonstrated in a TaN/AlNx/TiN memory cell that was prepared by sputter deposition techniques. The memory cell showed bipolar switching of resistance between +3.5 V and –3.5 V. The resistance ratio of high resistance state (HRS) to low resistance state (HRS), RHRS/RLRS, was about 2 over 100 cycles of endurance test. Both the LRS and HRS of the memory cell exhibited ohmic conduction at low voltages and Poole-Frenkel emission at high voltages. The electrical conduction in the TaN/AlNx/TiN memory cell was possibly attributed to the interactions between charges and defects in the AlNx film.
Keywords: Aluminum nitride, nonvolatile memory, resistive switching, thin films.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2698308 Modification of Electrical and Switching Characteristics of a Non Punch-Through Insulated Gate Bipolar Transistor by Gamma Irradiation
Authors: Hani Baek, Gwang Min Sun, Chansun Shin, Sung Ho Ahn
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Fast neutron irradiation using nuclear reactors is an effective method to improve switching loss and short circuit durability of power semiconductor (insulated gate bipolar transistors (IGBT) and insulated gate transistors (IGT), etc.). However, not only fast neutrons but also thermal neutrons, epithermal neutrons and gamma exist in the nuclear reactor. And the electrical properties of the IGBT may be deteriorated by the irradiation of gamma. Gamma irradiation damages are known to be caused by Total Ionizing Dose (TID) effect and Single Event Effect (SEE), Displacement Damage. Especially, the TID effect deteriorated the electrical properties such as leakage current and threshold voltage of a power semiconductor. This work can confirm the effect of the gamma irradiation on the electrical properties of 600 V NPT-IGBT. Irradiation of gamma forms lattice defects in the gate oxide and Si-SiO2 interface of the IGBT. It was confirmed that this lattice defect acts on the center of the trap and affects the threshold voltage, thereby negatively shifted the threshold voltage according to TID. In addition to the change in the carrier mobility, the conductivity modulation decreases in the n-drift region, indicating a negative influence that the forward voltage drop decreases. The turn-off delay time of the device before irradiation was 212 ns. Those of 2.5, 10, 30, 70 and 100 kRad(Si) were 225, 258, 311, 328, and 350 ns, respectively. The gamma irradiation increased the turn-off delay time of the IGBT by approximately 65%, and the switching characteristics deteriorated.Keywords: NPT-IGBT, gamma irradiation, switching, turn-off delay time, recombination, trap center.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 870307 Design of Non-Blocking and Rearrangeable Modified Banyan Network with Electro-Optic MZI Switching Elements
Authors: Ghanshyam Singh, Tirtha Pratim Bhattacharjee, R. P. Yadav, V. Janyani
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Banyan networks are really attractive for serving as the optical switching architectures due to their unique properties of small depth and absolute signal loss uniformity. The fact has been established that the limitations of blocking nature and the nonavailability of proper connections due to non-rearrangeable property can be easily ruled out using electro-optic MZI switches as basic switching elements. Combination of the horizontal expansion and vertical stacking of optical banyan networks is an appropriate scheme for constructing non-blocking banyan-based optical switching networks. The interconnected banyan switching fabrics (IBSF) have been considered and analyzed to best serve the purpose of optical switching with electro-optic MZI basic elements. The cross/bar state interchange for the switches has been facilitated by appropriate voltage switching or the by the switching of operating wavelength. The paper is dedicated to the modification of the basic switching element being used as well as the architecture of the switching network.Keywords: MZI switch, Banyan network, Reconfigurable switches.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1644306 Relaxing Convergence Constraints in Local Priority Hysteresis Switching Logic
Authors: Mubarak Alhajri
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This paper addresses certain inherent limitations of local priority hysteresis switching logic. Our main result establishes that under persistent excitation assumption, it is possible to relax constraints requiring strict positivity of local priority and hysteresis switching constants. Relaxing these constraints allows the adaptive system to reach optimality which implies the performance improvement. The unconstrained local priority hysteresis switching logic is examined and conditions for global convergence are derived.Keywords: Adaptive control, convergence, hysteresis constant, hysteresis switching.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 890305 Cardiopulmonary Disease in Bipolar Disorder Patient with History of SJS: Evidence Based Case Report
Authors: Zuhrotun Ulya, Muchammad Syamsulhadi, Debree Septiawan
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Patients with bipolar disorder are three times more likely to suffer cardiovascular disorders than the general population, which will influence their level of morbidity and rate of mortality. Bipolar disorder also affects the pulmonary system. The choice of long term-monotherapy and other combinative therapies have clinical impacts on patients. This study investigates the case of a woman who has been suffering from bipolar disorder for 16 years, and who has a history of Steven Johnson Syndrome. At present she is suffering also from cardiovascular and pulmonary disorder. An analysis of the results of this study suggests that there is a relationship between cardiovascular disorder, drug therapies, Steven Johnson Syndrome and mood stabilizer obtained from the PubMed, Cochrane, Medline, and ProQuest (publications between 2005 and 2015). Combination therapy with mood stabilizer is recommended for patients who do not have side effect histories from these drugs. The replacement drugs and combinations may be applied, especially for those with bipolar disorders, and the combination between atypical antipsychotic groups and mood stabilizers is often made. Clinicians, however, should be careful with the patients’ physical and metabolic changes, especially those who have experienced long-term therapy and who showed a history of Steven Johnson Syndrome (for which clinicians probably prescribed one type of medicine).Keywords: Cardio-pulmonary disease, bipolar disorder, Steven Johnson Syndrome, therapy.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1500304 A Novel Switched Reluctance Motor with U-type Segmental Rotor Pairs: Design, Analysis and Simulation Results
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This paper describes the design and modeling procedure of a novel 5-phase segment type switched reluctance motor (ST-SRM) under simultaneous two-phase (bipolar) excitation of windings. The rotor cores of ST-SRM are embedded in an aluminum block as well as to improve the performance characteristics. The magnetic circuit of the produced ST-SRM is constructed so that the magnetic flux paths are short and exclusive to each phase, thereby minimizing the commutation switching and eddy current losses in the laminations. The design and simulation principles presented apply primarily to conventional SRM and ST-SRM. It is proved that the novel 5-phase switched reluctance motor under two-phase excitation is superior among the criteria used in comparison. The purposed model is particularly well suited for high torque and weight constrained applications such as automobiles, aerospace and military applications.Keywords: Segmental Rotor Pairs, Two-phase Excitation, Commutation Switching, Aluminum Block.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 3262303 Implementation and Simulation of Half-Bridge Series Resonant Inverter in Zero Voltage Switching
Authors: Buket Turan Azizoğlu
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In switch mode power inverters, small sized inverters can be obtained by increasing the switching frequency. Switching frequency increment causes high driver losses. Also, high dt di and dt dv produced by the switching action creates high Electromagnetic Interference (EMI) and Radio Frequency Interference (RFI). In this paper, a series half bridge series resonant inverter circuit is simulated and evaluated practically to demonstrate the turn-on and turn-off conditions during zero or close to zero voltage switching. Also, the reverse recovery current effects of the body diode of the MOSFETs were investigated by operating above and below resonant frequency.Keywords: Driver losses, Half Bridge series resonant inverter, Zero Voltage Switching
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 3767302 Fast High Voltage Solid State Switch Using Insulated Gate Bipolar Transistor for Discharge-Pumped Lasers
Authors: Nur Syarafina Binti Othman, Tsubasa Jindo, Makato Yamada, Miho Tsuyama, Hitoshi Nakano
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A novel method to produce a fast high voltage solid states switch using Insulated Gate Bipolar Transistors (IGBTs) is presented for discharge-pumped gas lasers. The IGBTs are connected in series to achieve a high voltage rating. An avalanche transistor is used as the gate driver. The fast pulse generated by the avalanche transistor quickly charges the large input capacitance of the IGBT, resulting in a switch out of a fast high-voltage pulse. The switching characteristic of fast-high voltage solid state switch has been estimated in the multi-stage series-connected IGBT with the applied voltage of several tens of kV. Electrical circuit diagram and the mythology of fast-high voltage solid state switch as well as experimental results obtained are presented.
Keywords: High voltage, IGBT, Solid states switch.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 5911301 Code-Switching in Facebook Chatting Among Maldivian Teenagers
Authors: Aaidha Hammad
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This study examines the phenomenon of code switching among teenagers in the Maldives while they carry out conversations through Facebook in the form of “Facebook Chatting”. The current study aims at evaluating the frequency of code-switching and it investigates between what languages code-switching occurs. Besides the study identifies the types of words that are often codeswitched and the triggers for code switching. The methodology used in this study is mixed method of qualitative and quantitative approach. In this regard, the chat log of a group conversation between 10 teenagers was collected and analyzed. A questionnaire was also administered through online to 24 different teenagers from different corners of the Maldives. The age of teenagers ranged between 16 and 19 years. The findings of the current study revealed that while Maldivian teenagers chat in Facebook they very often code switch and these switches are most commonly between Dhivehi and English, but some other languages are also used to some extent. It also identified the different types of words that are being often code switched among the teenagers. Most importantly it explored different reasons behind code switching among the Maldivian teenagers in Facebook chatting.
Keywords: Code-switching, Facebook, Facebook chatting Maldivian teenagers.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1097300 Bipolar Square Wave Pulses for Liquid Food Sterilization using Cascaded H-Bridge Multilevel Inverter
Authors: Hanifah Jambari, Naziha A. Azli, M. Afendi M. Piah
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This paper presents the generation of bipolar square wave pulses with characteristics that are suitable for liquid food sterilization using a Cascaded H-bridge Multilevel Inverter (CHMI). Bipolar square waves pulses have been reported as stable for a longer time during the sterilization process with minimum heat emission and increased efficiency. The CHMI allows the system to produce bipolar square wave pulses and yielding high output voltage without using a transformer while fulfilling the pulse requirements for effective liquid food sterilization. This in turn can reduce power consumption and cost of the overall liquid food sterilization system. The simulation results have shown that pulses with peak output voltage of 2.4 kV, pulse width of between 1 2s and 1 ms at frequencies of 50 Hz and 100 Hz can be generated by a 7-level CHMI. Results from the experimental set-up based on a 5-level CHMI has indicated the potential of the proposed circuit in producing bipolar square wave output pulses with peak values that depends on the DC source level supplied to the CHMI modules, pulse width of between 12.5 2s and 1 ms at frequencies of 50 Hz and 100 Hz.Keywords: pulsed electric field, multilevel inverter, bipolarsquare wave, food sterilization
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2542299 A Comprehensive Evaluation of IGBTs Performance under Zero Current Switching
Authors: Ly. Benbahouche
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Currently, several soft switching topologies have been studied to achieve high power switching efficiency, reduced cost, improved reliability and reduced parasites. It is well known that improvement in power electronics systems always depend on advanced in power devices. The IGBT has been successfully used in a variety of switching applications such as motor drives and appliance control because of its superior characteristics.
The aim of this paper is focuses on simulation and explication of the internal dynamics of IGBTs behaviour under the most popular soft switching schemas that is Zero Current Switching (ZCS) environments.
The main purpose of this paper is to point out some mechanisms relating to current tail during the turn-off and examination of the response at turn-off with variation of temperature, inductance L, snubber capacitors Cs, and bus voltage in order to achieve an improved understanding of internal carrier dynamics. It is shown that the snubber capacitor, the inductance and even the temperature controls the magnitude and extent of the tail current, hence the turn-off time (switching speed of the device).
Moreover, it has also been demonstrated that the ZCS switching can be utilized efficiently to improve and reduce the power losses as well as the turn-off time. Furthermore, the turn-off loss in ZCS was found to depend on the time of switching of the device.
Keywords: PT-IGBT, ZCS, turn-off losses, dV/dt.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2587298 Study on the Effect of Bolt Locking Method on the Deformation of Bipolar Plate in PEMFC
Authors: Tao Chen, ShiHua Liu, JiWei Zhang
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Assembly of the proton exchange membrane fuel cells (PEMFC) has a very important influence on its performance and efficiency. The various components of PEMFC stack are usually locked and fixed by bolts. Locking bolt will cause the deformation of the bipolar plate and the other components, which will affect directly the deformation degree of the integral parts of the PEMFC as well as the performance of PEMFC. This paper focuses on the object of three-cell stack of PEMFC. Finite element simulation is used to investigate the deformation of bipolar plate caused by quantity and layout of bolts, bolt locking pressure, and bolt locking sequence, etc. Finally, we made a conclusion that the optimal combination packaging scheme was adopted to assemble the fuel cell stack. The scheme was in use of 3.8 MPa locking pressure imposed on the fuel cell stack, type Ⅱ of four locking bolts and longitudinal locking method. The scheme was obtained by comparatively analyzing the overall displacement contour of PEMFC stack, absolute displacement curve of bipolar plate along the given three paths in the Z direction and the polarization curve of fuel cell. The research results are helpful for the fuel cell stack assembly.
Keywords: Bipolar plate, deformation, finite element simulation, fuel cell, locking bolt.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 833297 Comparison of Zero Voltage Soft Switching and Hard Switching Boost Converter with Maximum Power Point Tracking
Authors: N. Ravi Kumar, R. Kamalakannan
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The inherent nature of normal boost converter has more voltage stress across the power electronics switch and ripple. The presented formation of the front end rectifier stage for a photovoltaic (PV) organization is mainly used to give the supply. Further increasing of the solar efficiency is achieved by connecting the zero voltage soft switching boost converter. The zero voltage boost converter is used to convert the low level DC voltage to high level DC voltage. The inherent nature of zero voltage switching boost converter is used to shrink the voltage tension across the power electronics switch and ripple. The input stage allows the determined power point tracking to be used to extract supreme power from the sun when it is available. The hardware setup was implemented by using PIC Micro controller (16F877A).
Keywords: Boost converter, duty cycle, hard switching, MOSFET, maximum power point tracking, photovoltaic, soft switching, zero voltage switching.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1203296 Synchronization Technique for Random Switching Frequency Pulse-Width Modulation
Authors: Apinan Aurasopon, Worawat Sa-ngiavibool
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This paper proposes a synchronized random switching frequency pulse width modulation (SRSFPWM). In this technique, the clock signal is used to control the random noise frequency which is produced by the feedback voltage of a hysteresis circuit. These make the triangular carrier frequency equaling to the random noise frequency in each switching period with the symmetrical positive and negative slopes of triangular carrier. Therefore, there is no error voltage in PWM signal. The PSpice simulated results shown the proposed technique improved the performance in case of low frequency harmonics of PWM signal comparing with conventional random switching frequency PWM.
Keywords: Random switching frequency pulse - width modulation.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2795295 Multi-Level Pulse Width Modulation to Boost the Power Efficiency of Switching Amplifiers for Analog Signals with Very High Crest Factor
Authors: Jan Doutreloigne
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The main goal of this paper is to develop a switching amplifier with optimized power efficiency for analog signals with a very high crest factor such as audio or DSL signals. Theoretical calculations show that a switching amplifier architecture based on multi-level pulse width modulation outperforms all other types of linear or switching amplifiers in that respect. Simulations on a 2 W multi-level switching audio amplifier, designed in a 50 V 0.35 mm IC technology, confirm its superior performance in terms of power efficiency. A real silicon implementation of this audio amplifier design is currently underway to provide experimental validation.
Keywords: Audio amplifier, multi-level switching amplifier, power efficiency, pulse width modulation, PWM, self-oscillating amplifier.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 865294 Switching Behaviors of TiN/HfOx/Pt Based RRAM
Authors: B. B. Weng, Z. Fang, Z. X. Chen, X. P. Wang, G. Q. Lo, D. L. Kwong
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Resistive Random Access Memory (RRAM) had received great amount of attention from various research efforts in recent years, owing to its promising performance as a next generation memory device. In this paper, samples based on TiN/HfOx/Pt stack were prepared and its electrical switching behaviors were characterized and discussed in brief.
Keywords: HfOx, resistive switching, RRAM.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1847293 Comparison of Different Discontinuous PWM Technique for Switching Losses Reduction in Modular Multilevel Converters
Authors: Kaumil B. Shah, Hina Chandwani
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The modular multilevel converter (MMC) is one of the advanced topologies for medium and high-voltage applications. In high-power, high-voltage MMC, a large number of switching power devices are required. These switching power devices (IGBT) considerable switching losses. This paper analyzes the performance of different discontinuous pulse width modulation (DPWM) techniques and compares the results against a conventional carrier based pulse width modulation method, in order to reduce the switching losses of an MMC. The DPWM reference wave can be generated by adding the zero-sequence component to the original (sine) reference modulation signal. The result of the addition gives the reference signal of DPWM techniques. To minimize the switching losses of the MMC, the clamping period is controlled according to the absolute value of the output load current. No switching is generated in the clamping period so overall switching of the power device is reduced. The simulation result of the different DPWM techniques is compared with conventional carrier-based pulse-width modulation technique.Keywords: Modular multilevel converter, discontinuous pulse width modulation, switching losses, zero-sequence voltage.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 918292 A Novel Zero Voltage Transition Synchronous Buck Converter for Portable Application
Authors: S. Pattnaik, A. K. Panda, Aroul K., K. K. Mahapatra
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This paper proposes a zero-voltage transition (ZVT) PWM synchronous buck converter, which is designed to operate at low output voltage and high efficiency typically required for portable systems. To make the DC-DC converter efficient at lower voltage, synchronous converter is an obvious choice because of lower conduction loss in the diode. The high-side MOSFET is dominated by the switching losses and it is eliminated by the soft switching technique. Additionally, the resonant auxiliary circuit designed is also devoid of the switching losses. The suggested procedure ensures an efficient converter. Theoretical analysis, computer simulation, and experimental results are presented to explain the proposed schemes.
Keywords: DC-DC Converter, Switching loss, Synchronous Buck, Soft switching, ZVT.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 3150291 Bipolar PWM and LCL Filter Configuration to Reduce Leakage Currents in Transformerless PV System Connected to Utility Grid
Authors: Shanmuka Naga Raju
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This paper presents PV system without considering transformer connected to electric grid. This is considered more economic compared to present PV system. The problem that occurs when transformer is not considered appears with a leakage current near capacitor connected to ground. Bipolar Pulse Width Modulation (BPWM) technique along with filter L-C-L configuration in the circuit is modeled to shrink the leakage current in the circuit. The DC/AC inverter is modeled using H-bridge Insulated Gate Bipolar Transistor (IGBT) module which is controlled using proposed Bipolar PWM control technique. To extract maximum power, Maximum Power Point Technique (MPPT) controller is used in this model. Voltage and current regulators are used to determine the reference voltage for the inverter from active and reactive current where reactive current is set to zero. The PLL is modeled to synchronize the measurements. The model is designed with MATLAB Simulation blocks and compared with the methods available in literature survey to show its effectiveness.Keywords: Photovoltaic, PV, pulse width modulation, PWM, perturb and observe, phase locked loop.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1018290 A Supervisory Scheme for Step-Wise Safe Switching Controllers
Authors: Fotis N. Koumboulis, Maria P. Tzamtzi
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A supervisory scheme is proposed that implements Stepwise Safe Switching Logic. The functionality of the supervisory scheme is organized in the following eight functional units: Step- Wise Safe Switching unit, Common controllers design unit, Experimentation unit, Simulation unit, Identification unit, Trajectory cruise unit, Operating points unit and Expert system unit. The supervisory scheme orchestrates both the off-line preparative actions, as well as the on-line actions that implement the Stepwise Safe Switching Logic. The proposed scheme is a generic tool, that may be easily applied for a variety of industrial control processes and may be implemented as an automation software system, with the use of a high level programming environment, like Matlab.
Keywords: Supervisory systems, safe switching, nonlinear systems.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1451289 Verification of the Simultaneous Local Extraction Method of Base and Thermal Resistance of Bipolar Transistors
Authors: Robert Setekera, Luuk Tiemeijer, Ramses van der Toorn
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In this paper an extensive verification of the extraction method (published earlier) that consistently accounts for self-heating and Early effect to accurately extract both base and thermal resistance of bipolar junction transistors is presented. The method verification is demonstrated on advanced RF SiGe HBTs were the extracted results for the thermal resistance are compared with those from another published method that ignores the effect of Early effect on internal base-emitter voltage and the extracted results of the base resistance are compared with those determined from noise measurements. A self-consistency of our method in the extracted base resistance and thermal resistance using compact model simulation results is also carried out in order to study the level of accuracy of the method.
Keywords: Avalanche, Base resistance, Bipolar transistor, Compact modeling, Early voltage, Thermal resistance, Self-heating, parameter extraction.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2048288 Optimal Switching Strategies for Tracking of Currents of Voltage Source Converters
Authors: R. Oloomi, M. A. Sadrnia
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This paper proposes a new optimal feedback controller for voltage source converters VSC's, for current regulated voltage source converters, which allows compensate the harmonics of current produced by nonlinear loads and load reactive power. The aim of the present paper is to describe a novel switching signal generation technique called optimal controller which guarantees that the injected currents follow the reference currents determined by the compensation strategy, with the smallest possible tracking error and fixed switching frequency. It is compared with well-known hysteresis current controller HCC. The validity of presented method and its comparison with HCC is studied through simulation results.Keywords: Hysteresis Current Controller, Optimal Controller, Switching pattern, Voltage Source Converter.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1479287 Pulse Skipping Modulated DC to DC Step Down Converter Under Discontinuous Conduction Mode
Authors: Ramamurthy S, Ranjan P V, Raghavendiran T A
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Reduced switching loss favours Pulse Skipping Modulation mode of switching dc-to-dc converters at light loads. Under certain conditions the converter operates in discontinuous conduction mode (DCM). Inductor current starts from zero in each switching cycle as the switching frequency is constant and not adequately high. A DC-to-DC buck converter is modelled and simulated in this paper under DCM. Effect of ESR of the filter capacitor in input current frequency components is studied. The converter is studied for its operation under input voltage and load variation. The operating frequency is selected to be close to and above audio range.Keywords: Buck converter, Discontinuous conduction mode, Electromagnetic Interference, Pulse Skipping Modulation.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 4927286 A Single Switch High Step-Up DC/DC Converter with Zero Current Switching Condition
Authors: Rahil Samani, Saeed Soleimani, Ehsan Adib, Majid Pahlevani
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This paper presents an inverting high step-up DC/DC converter. Basically, this high step-up DC/DC converter is an appealing interface for solar applications. The proposed topology takes advantage of using coupled inductors. Due to the leakage inductances of these coupled inductors, the power MOSFET has the zero current switching (ZCS) condition, which results in decreased switching losses. This will substantially improve the overall efficiency of the power converter. Furthermore, employing coupled inductors has led to a higher voltage gain. Theoretical analysis and experimental results of a 100W 20V/220V prototype are presented to verify the superior performance of the proposed DC/DC converter.Keywords: Coupled inductors, high step-up DC/DC converter, zero-current switching, cuk converter, sepic converter.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 720285 Low Power Bus Binding Based on Dynamic Bit Reordering
Authors: Jihyung Kim, Taejin Kim, Sungho Park, Jun-Dong Cho
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In this paper, the problem of reducing switching activity in on-chip buses at the stage of high-level synthesis is considered, and a high-level low power bus binding based on dynamic bit reordering is proposed. Whereas conventional methods use a fixed bit ordering between variables within a bus, the proposed method switches a bit ordering dynamically to obtain a switching activity reduction. As a result, the proposed method finds a binding solution with a smaller value of total switching activity (TSA). Experimental result shows that the proposed method obtains a binding solution having 12.0-34.9% smaller TSA compared with the conventional methods.Keywords: bit reordering, bus binding, low power, switching activity matrix
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1303284 A Single Phase ZVT-ZCT Power Factor Correction Boost Converter
Authors: Yakup Sahin, Naim Suleyman Ting, Ismail Aksoy
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In this paper, a single phase soft switched Zero Voltage Transition and Zero Current Transition (ZVT-ZCT) Power Factor Correction (PFC) boost converter is proposed. In the proposed PFC converter, the main switch turns on with ZVT and turns off with ZCT without any additional voltage or current stresses. Auxiliary switch turns on and off with zero current switching (ZCS). Also, the main diode turns on with zero voltage switching (ZVS) and turns off with ZCS. The proposed converter has features like low cost, simple control and structure. The output current and voltage are controlled by the proposed PFC converter in wide line and load range. The theoretical analysis of converter is clarified and the operating steps are given in detail. The simulation results of converter are obtained for 500 W and 100 kHz. It is observed that the semiconductor devices operate with soft switching (SS) perfectly. So, the switching power losses are minimum. Also, the proposed converter has 0.99 power factor with sinusoidal current shape.Keywords: Power factor correction, zero-voltage transition, zero-current transition, soft switching.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2008283 Energy Recovery Soft Switching Improved Efficiency Half Bridge Inverter for Electronic Ballast Applications
Authors: A. Yazdanpanah Goharrizi
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An improved topology of a voltage-fed quasi-resonant soft switching LCrCdc series-parallel half bridge inverter with a constant-frequency for electronic ballast applications is proposed in this paper. This new topology introduces a low-cost solution to reduce switching losses and circuit rating to achieve high-efficiency ballast. Switching losses effect on ballast efficiency is discussed through experimental point of view. In this discussion, an improved topology in which accomplishes soft switching operation over a wide power regulation range is proposed. The proposed structure uses reverse recovery diode to provide better operation for the ballast system. A symmetrical pulse wide modulation (PWM) control scheme is implemented to regulate a wide range of out-put power. Simulation results are kindly verified with the experimental measurements obtained by ballast-lamp laboratory prototype. Different load conditions are provided in order to clarify the performance of the proposed converter.Keywords: Electronic ballast, Pulse wide modulation (PWM) Reverse recovery diode, Soft switching.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2189