Search results for: silicon refinement

Authors: V. Geza, J. Vencels, G. Zageris, S. Pavlovs

Abstract:

One of the most perspective methods to produce SoG-Si is refinement via metallurgical route. The most critical part of this route is refinement from boron and phosphorus. Therefore, a new approach could address this problem. We propose an approach of creating surface waves on silicon melt’s surface in order to enlarge its area and accelerate removal of boron via chemical reactions and evaporation of phosphorus. A two dimensional numerical model is created which includes coupling of electromagnetic and fluid dynamic simulations with free surface dynamics. First results show behaviour similar to experimental results from literature.

Keywords: Numerical modelling, silicon refinement, surface waves, VOF method.

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Authors: Ashot Navasardian, Mariam Vardanian, Vladik Vardanian

Abstract:

The photovoltaic and the semiconductor industries are in growth and it is necessary to supply a large amount of silicon to maintain this growth. Since silicon is still the best material for the manufacturing of solar cells and semiconductor components so the pure silicon like solar grade and semiconductor grade materials are demanded. There are two main routes for silicon production: metallurgical and chemical. In this article, we reviewed the electrotecnological installations and systems for semiconductor manufacturing. The main task is to design the installation which can produce SOG Silicon from river sand by one work unit.

Keywords: Metallurgical grade silicon, solar grade silicon, impurity, refining, plasma.

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Authors: Mehrnaz Najafi, Hassan Haghighi

Abstract:

Morgan-s refinement calculus (MRC) is one of the well-known methods allowing the formality presented in the program specification to be continued all the way to code. On the other hand, Object-Z (OZ) is an extension of Z adding support for classes and objects. There are a number of methods for obtaining code from OZ specifications that can be categorized into refinement and animation methods. As far as we know, only one refinement method exists which refines OZ specifications into code. However, this method does not have fine-grained refinement rules and thus cannot be automated. On the other hand, existing animation methods do not present mapping rules formally and do not support the mapping of several important constructs of OZ, such as all cases of operation expressions and most of constructs in global paragraph. In this paper, with the aim of providing an automatic path from OZ specifications to code, we propose an approach to map OZ specifications into their counterparts in MRC in order to use fine-grained refinement rules of MRC. In this way, having counterparts of our specifications in MRC, we can refine them into code automatically using MRC tools such as RED. Other advantages of our work pertain to proposing mapping rules formally, supporting the mapping of all important constructs of Object-Z, and considering dynamic instantiation of objects while OZ itself does not cover this facility.

Keywords: Formal method, Formal specification, Formalprogram development, Morgan's Refinement Calculus, Object-Z

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Authors: Shiyang Zhu, G. Q. Lo, D. L. Kwong

Abstract:

Silicon photonics has generated an increasing interest in recent years mainly for optical communications optical interconnects in microelectronic circuits or bio-sensing applications. The development of elementary passive and active components (including detectors and modulators), which are mainly fabricated on the silicon on insulator platform for CMOS-compatible fabrication, has reached such a performance level that the integration challenge of silicon photonics with microelectronic circuits should be addressed. Since crystalline silicon can only be grown from another silicon crystal, making it impossible to deposit in this state, the optical devices are typically limited to a single layer. An alternative approach is to integrate a photonic layer above the CMOS chip using back-end CMOS fabrication process. In this paper, various materials, including silicon nitride, amorphous silicon, and polycrystalline silicon, for this purpose are addressed.

Keywords: Silicon photonics, CMOS, Integration.

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Authors: W. L. Liong, Srimala Sreekantan, Sabar D. Hutagalung

Abstract:

The effect of concentration of reduction agent of sodium borohydrate (NaBH4) on the properties of silicon nanoparticles synthesized via microemulsion route is reported. In this work, the concentration of the silicon tetrachloride (SiCl4) that served as silicon source with sodium hydroxide (NaOH) and polyethylene glycol (PEG) as stabilizer and surfactant, respectively, are keep fixed. Four samples with varied concentration of NaBH4 from 0.05 M to 0.20 M were synthesized. It was found that the lowest concentration of NaBH4 gave better formation of silicon nanoparticles.

Keywords: Microelmusion, nanoparticles, reduction, silicon

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Authors: C. Bunsanit

Abstract:

This paper presents the refinement method for two beams formation of wideband smart antenna. The refinement method for weighting coefficients is based on Fully Spatial Signal Processing by taking Inverse Discrete Fourier Transform (IDFT), and its simulation results are presented using MATLAB. The radiation pattern is created by multiplying the incoming signal with real weights and then summing them together. These real weighting coefficients are computed by IDFT method; however, the range of weight values is relatively wide. Therefore, for reducing this range, the refinement method is used. The radiation pattern concerns with five input parameters to control. These parameters are maximum weighting coefficient, wideband signal, direction of mainbeam, beamwidth, and maximum of minor lobe level. Comparison of the obtained simulation results between using refinement method and taking only IDFT shows that the refinement method works well for wideband two beams formation.

Keywords: Fully spatial signal processing, beam forming, refinement method, smart antenna, weighting coefficient, wideband.

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Authors: Lazim Abdullah, Nurhakimah Ab. Rahman

Abstract:

Linear systems are widely used in many fields of science and engineering. In many applications, at least some of the parameters of the system are represented by fuzzy rather than crisp numbers. Therefore it is important to perform numerical algorithms or procedures that would treat general fuzzy linear systems and solve them using iterative methods. This paper aims are to solve fuzzy linear systems using four types of Jacobi based iterative methods. Four iterative methods based on Jacobi are used for solving a general n × n fuzzy system of linear equations of the form Ax = b , where A is a crisp matrix and b an arbitrary fuzzy vector. The Jacobi, Jacobi Over-Relaxation, Refinement of Jacobi and Refinement of Jacobi Over-Relaxation methods was tested to a five by five fuzzy linear system. It is found that all the tested methods were iterated differently. Due to the effect of extrapolation parameters and the refinement, the Refinement of Jacobi Over-Relaxation method was outperformed the other three methods.

Keywords: Fuzzy linear systems, Jacobi, Jacobi Over- Relaxation, Refinement of Jacobi, Refinement of Jacobi Over- Relaxation.

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Authors: M. R. Gad El- Kareem, A. M. K. Abdel Aal, A. Y. Mohamed

Abstract:

During 2011 and 2012 seasons, Zaghloul date palms received four sprays of silicon (Si) at 0.05 to 0.1% and selenium (Se) at 0.01 to 0.02%. Growth, nutritional status, yield as well as physical and chemical characteristics of the fruits in response to application of silicon and selenium were investigated. Single and combined applications of silicon at 0.05 to 0.1% and selenium at 0.01 to 0.02% was very effective in enhancing the leaf area, total chlorophylls, percentages of N, P and K in the leaves, yield, bunch weight as well as physical and chemical characteristics of the fruits in relative to the check treatment. Silicon was superior to selenium in this respect. Combined application was favorable than using each alone in this connection. Treating Zaghloul date palms four times with a mixture of silicon at 0.05% + selenium at 0.01% resulted in an economical yield and producing better fruit quality.

Keywords: Date Palms, Zaghloul, Silicon, Selenium, leaf area.

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Authors: A. Ould-Abbas, M. Bouchaour, , M. Madani, D. Trari, O. Zeggai, M. Boukais, N.-E.Chabane-Sari

Abstract:

The porous silicon (PS), formed from the anodization of a p+ type substrate silicon, consists of a network organized in a pseudo-column as structure of multiple side ramifications. Structural micro-topology can be interpreted as the fraction of the interconnected solid phase contributing to thermal transport. The reduction of dimensions of silicon of each nanocristallite during the oxidation induced a reduction in thermal conductivity. Integration of thermal sensors in the Microsystems silicon requires an effective insulation of the sensor element. Indeed, the low thermal conductivity of PS consists in a very promising way in the fabrication of integrated thermal Microsystems.In this work we are interesting in the measurements of thermal conductivity (on the surface and in depth) of PS by the micro-Raman spectroscopy. The thermal conductivity is studied according to the parameters of anodization (initial doping and current density. We also, determine porosity of samples by spectroellipsometry.

Keywords: micro-Raman spectroscopy, mono-crysatl silicon, porous silicon, thermal conductivity

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Authors: N. I. Kargin, G. K. Safaraliev, A. S. Gusev, A. O. Sultanov, N. V. Siglovaya, S. M. Ryndya, A. A. Timofeev

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In this paper, an experimental and theoretical study of the processes of mesoporous silicon carbonization during the formation of buffer layers for the subsequent epitaxy of 3C-SiC films and related wide-band-gap semiconductors is performed. Experimental samples were obtained by the method of chemical vapor deposition and investigated by scanning electron microscopy. Analytic expressions were obtained for the effective diffusion factor and carbon atoms diffusion length in a porous system. The proposed model takes into account the processes of Knudsen diffusion, coagulation and overgrowing of pores during the formation of a silicon carbide layer.

Keywords: Silicon carbide, porous silicon, carbonization, electrochemical etching, diffusion.

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Authors: Shahrazed Medeghri, Saad Hamzaoui, Mokhtar Zerdali

Abstract:

The metallurgical grade silicon (MG-Si) is obtained from the reduction of silica (SiO₂) in an induction furnace or an electric arc furnace. Impurities inherent in reduction process also depend on the quality of the raw material used. Among the applications of the silicon, it is used as a substrate for the photovoltaic conversion of solar energy and this conversion is wider as the purity of the substrate is important. Research is being done where the purpose is looking for new methods of manufacturing and purification of silicon, as well as new materials that can be used as substrates for the photovoltaic conversion of light energy. In this research, the technique of production of silicon in an induction furnace, using a high vacuum for fusion. Diatomaceous Silica (SiO2) used is 99 mass% initial purities, the carbon used is 6N of purity and the particle size of 63μm as starting materials. The final achieved purity of the material was above 50% by mass. These results demonstrate that this method is a technically reliable, and allows obtaining a better return on the amount 50% of silicon.

Keywords: Induction, amorphous silica, carbon microstructure, silicon.

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Authors: Li Long, Thomas Ortlepp

Abstract:

The transport properties of carriers in polycrystalline silicon film affect the performance of polycrystalline silicon-based devices. They depend strongly on the grain structure, grain boundary trap properties and doping concentration, which in turn are determined by the film deposition and processing conditions. Based on the properties of charge carriers, phonons, grain boundaries and their interactions, the thermoelectric properties of polycrystalline silicon are analyzed with the relaxation time approximation of the Boltzmann transport equation. With this approach, thermal conductivity, electrical conductivity and Seebeck coefficient as a function of grain size, trap properties and doping concentration can be determined. Experiment on heavily doped polycrystalline silicon is carried out and measurement results are compared with the model.

Keywords: Conductivity, polycrystalline silicon, relaxation time approximation, Seebeck coefficient, thermoelectric property.

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Authors: Qing Fang, Lianxi Jia, JunFeng Song, Xiaoguang Tu, Mingbin Yu, Andy Eu-jin Lim, Guo Qiang Lo

Abstract:

The first pn-type carrier-induced silicon Bragg-grating filter is demonstrated. The extinction-ratio modulations are 11.5 dB and 10 dB with reverse and forward biases, respectively. 8-Gpbs data rate is achieved with a reverse bias.

Keywords: Silicon photonics, Waveguide grating, Carrier-induced, Extinction-ratio modulation.

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Authors: Isao Tomita

Abstract:

The principle of all-silicon Raman lasers for an output wavelength of 1.3 μm is presented, which employs quasi-phase-matched structures and resonators to enhance the output power. 1.3-μm laser beams for GE-PONs in FTTH systems generated from a silicon device are very important because such a silicon device can be monolithically integrated with the silicon planar lightwave circuits (Si PLCs) used in the GE-PONs. This reduces the device fabrication processes and time and also optical losses at the junctions between optical waveguides of the Si PLCs and Si laser devices when compared with 1.3-μm III-V semiconductor lasers set on the Si PLCs employed at present. We show that the quasi-phase-matched Si Raman laser with resonators can produce about 174 times larger laser power at 1.3 μm (at maximum) than that without resonators for a Si waveguide of Raman gain 20 cm/GW and optical loss 1.2 dB/cm, pumped at power 10 mW, where the length of the waveguide is 3 mm and its cross-section is (1.5 μm)2.

Keywords: All-silicon raman laser, FTTH, GE-PON, quasi-phase-matched structure, resonator.

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Authors: Qing Fang, Lianxi Jia, Junfeng Song, Chao Li, Xianshu Luo, Mingbin Yu, Guoqiang Lo

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In this paper, we demonstrated a 1 × 4 silicon photonic cascaded arrayed waveguide grating, which is fabricated on a SOI wafer with a 220 nm top Si layer and a 2µm buried oxide layer. The measured on-chip transmission loss of this cascaded arrayed waveguide grating is ~ 5.6 dB, including the fiber-to-waveguide coupling loss. The adjacent crosstalk is 33.2 dB. Compared to the normal single silicon photonic arrayed waveguide grating with a crosstalk of ~ 12.5 dB, the crosstalk of this device has been dramatically increased.

Keywords: Silicon photonic, arrayed waveguide grating, high-crosstalk, cascaded structure.

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Authors: V.Fathipour, M. A. Malakootian, S. Fathipour, M. Fathipour

Abstract:

In this paper we propose a novel RF LDMOS structure which employs a thin strained silicon layer at the top of the channel and the N-Drift region. The strain is induced by a relaxed Si0.8 Ge0.2 layer which is on top of a compositionally graded SiGe buffer. We explain the underlying physics of the device and compare the proposed device with a conventional LDMOS in terms of energy band diagram and carrier concentration. Numerical simulations of the proposed strained silicon laterally diffused MOS using a 2 dimensional device simulator indicate improvements in saturation and linear transconductance, current drivability, cut off frequency and on resistance. These improvements are however accompanied with a suppression in the break down voltage.

Keywords: High Frequency MOSFET, Design of RF LDMOS, Strained-Silicon, LDMOS.

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Authors: Wei Sun, Ruilin Zheng, Xuyuan Chen

Abstract:

Micro power sources are required to be used in autonomous microelectromechanical system (MEMS). In this paper,  we designed and fabricated a three dimensional (3D) MEMS supercapacitor, which is consisting of conformal silicon  dioxide/titanium/polypyrrole (PPy) layers on silicon substrate. At first, ''through-structure'' was fabricated on the silicon substrate by high-aspect-ratio deep reactive ion etching (DRIE) method, which enlarges the available surface area significantly. Then the SiO2/Ti/PPy layers grew sequentially on the ³through-structure´. Finally, the supercapacitor was investigated by electrochemical methods.

Keywords: MEMS, Supercapacitor, DRIE, 3D.

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Authors: Q. Wei, D. G. Hwang, Z. Mohy-Udin, D. H. Shin, J. H. Park, M. Y. Kang, J. H. Cho

Abstract:

This study presents design of a carbon silicon electrode for iontophorsis treatment towards alopecia. The alopecia is a medical description means loss of hair from the body. For solving this problem, the drug need to be delivered into the scalp, therefore, the iontophoresis was chosen to use in this treatment. However, almost common electrodes of iontophoresis device are made with metal material, the electrodes could give patients hurt when they using it, and it is hard to avoid the hair for attaching the hair. For this reason, an electrode is made with silicon material to decrease the hurt from the electrodes, and the carbon material is mixed in it for increasing conductance. The several cones with stainless material on the electrode make the electrode is able to void hair to attach the affected part. According to the results of a vivo-experiment, the carbon silicon electrode showed a good performance and in treatment comfortably.

Keywords: Carbon silicon, drug delivery system, iontophoresis

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Authors: Jianguo Tang, Kun She, William Zhu

Abstract:

Covering-based rough sets is an extension of rough sets and it is based on a covering instead of a partition of the universe. Therefore it is more powerful in describing some practical problems than rough sets. However, by extending the rough sets, covering-based rough sets can increase the roughness of each model in recognizing objects. How to obtain better approximations from the models of a covering-based rough sets is an important issue. In this paper, two concepts, determinate elements and indeterminate elements in a universe, are proposed and given precise definitions respectively. This research makes a reasonable refinement of the covering-element from a new viewpoint. And the refinement may generate better approximations of covering-based rough sets models. To prove the theory above, it is applied to eight major coveringbased rough sets models which are adapted from other literature. The result is, in all these models, the lower approximation increases effectively. Correspondingly, in all models, the upper approximation decreases with exceptions of two models in some special situations. Therefore, the roughness of recognizing objects is reduced. This research provides a new approach to the study and application of covering-based rough sets.

Keywords: Determinate element, indeterminate element, refinementof covering-element, refinement of covering, covering-basedrough sets.

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Authors: V. Swarnalatha, A. V. Narasimha Rao, P. Pal

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The present research reports the investigation of fast etching of silicon for the fabrication of microelectromechanical systems (MEMS) structures using silicon wet bulk micromachining. Low concentration tetramethyl-ammonium hydroxide (TMAH) and hydroxylamine (NH₂OH) are used as main etchant and additive, respectively. The concentration of NH₂OH is varied to optimize the composition to achieve best etching characteristics such as high etch rate, significantly high undercutting at convex corner for the fast release of the microstructures from the substrate, and improved etched surface morphology. These etching characteristics are studied on Si{100} and Si{110} wafers as they are most widely used in the fabrication of MEMS structures as wells diode, transistors and integrated circuits.

Keywords: KOH, MEMS, micromachining, silicon, TMAH, wet anisotropic etching.

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Authors: Satoru Kaneko, Takeshi Ito, Kensuke Akiyama, Manabu Yasui, Chihiro Kato, Satomi Tanaka, Yasuo Hirabayashi, Takeshi Ozawa, Akira Matsuno, Takashi Nire, Hiroshi Funakubo, Mamoru Yoshimoto

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As application of re-activation of backside on power device Insulated Gate Bipolar Transistor (IGBT), laser annealing was employed to irradiate amorphous silicon substrate, and resistivities were measured using four point probe measurement. For annealing the amorphous silicon two lasers were used at wavelength of visible green (532 nm) together with Infrared (793 nm). While the green laser efficiently increased temperature at top surface the Infrared laser reached more deep inside and was effective for melting the top surface. A finite element method was employed to evaluate time dependent thermal distribution in silicon substrate.

Keywords: laser, annealing, silicon, recrystallization, thermal distribution, resistivity, finite element method, absorption, melting point, latent heat of fusion.

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Authors: J. H. Choi, S. J. Kim, M. S. Jung, S. J. Kim, S. J. Joo, S. C. Kim

Abstract:

There are a many of needs for the development of SiC-based hydrogen sensor for harsh environment applications. We fabricated and investigated Pd/Ta2O5/SiC-based hydrogen sensors with MOS capacitor structure for high temperature process monitoring and leak detection applications in such automotive, chemical and petroleum industries as well as direct monitoring of combustion processes. In this work, we used silicon carbide (SiC) as a substrate to replace silicon which operating temperatures are limited to below 200°C. Tantalum oxide was investigated as dielectric layer which has high permeability for hydrogen gas and high dielectric permittivity, compared with silicon dioxide or silicon nitride. Then, electrical response properties, such as I-V curve and dependence of capacitance on hydrogen concentrations were analyzed in the temperature ranges of room temperature to 500°C for performance evaluation of the sensor.

Keywords: High temperature, hydrogen sensor, SiC, Ta2O5 dielectric layer.

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Authors: Abbas Ghanbari-Malidareh

Abstract:

Silicon is a beneficial element for plant growth. It helps plants to overcome multiple stresses, alleviates metal toxicity and improves nutrient imbalance. Field experiment was conducted as split-split plot arranged in a randomized complete block design with four replications. Irrigation system include continues flooding and deficit as main plots and nitrogen rates N0, N46, N92, and N138 kg/ha as sub plots and silicon rates Si0 & Si500 kg/ha as sub-subplots. Results indicate that grain yield had not significant difference between irrigation systems. Flooding irrigation had higher biological yield than deficit irrigation whereas, no significant difference in grain and straw yield. Nitrogen application increased grain, biological and straw yield. Silicon application increased grain, biological and straw yield but, decreased harvest index. Flooding irrigation had higher number of total tillers / hill than deficit irrigation, but deficit irrigation had higher number of fertile tillers / hill than flooding irrigation. Silicon increased number of filled spikelet and decreased blank spikelet. With high nitrogen application decreased 1000-grain weight. It can be concluded that if the nitrogen application was high and water supplied was available we could have silicon application until increase grain yield.

Keywords: Grain yield, Irrigation, Nitrogen, Rice, Silicon.

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Authors: Woei-Shyan Lee, Shuo-Ling Chang

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The nanoindentation behaviour and phase transformation of annealed single-crystal silicon wafers are examined. The silicon specimens are annealed at temperatures of 250, 350 and 450ºC, respectively, for 15 minutes and are then indented to maximum loads of 30, 50 and 70 mN. The phase changes induced in the indented specimens are observed using transmission electron microscopy (TEM) and micro-Raman scattering spectroscopy (RSS). For all annealing temperatures, an elbow feature is observed in the unloading curve following indentation to a maximum load of 30 mN. Under higher loads of 50 mN and 70 mN, respectively, the elbow feature is replaced by a pop-out event. The elbow feature reveals a complete amorphous phase transformation within the indented zone, whereas the pop-out event indicates the formation of Si XII and Si III phases. The experimental results show that the formation of these crystalline silicon phases increases with an increasing annealing temperature and indentation load. The hardness and Young’s modulus both decrease as the annealing temperature and indentation load are increased.

Keywords: Nanoindentation, silicon, phase transformation, amorphous, annealing.

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Authors: P. Nadimi, D. D. Caviglia, E. Di Zitti

Abstract:

We propose an all optical flip-flop circuit composedof two Silicon-on-insulator microring resonators coupled to straightwaveguides by exploiting the optical bistability behavior due to thenonlinear Kerr effect. We used the transfer matrix analysis toinvestigate continuous wave propagation through microrings, as wellwe considered the nonlinear switching characteristics of an opticaldevice using a double-coupler silicon ring resonator in presence ofthe Kerr nonlinearity, thus obtaining the bistability behavior of theoutput port, the drop port and also inside the silicon microringresonator. It is shown that the bistability behavior depends on thecontrol of the input wavelength.KeywordsAll optical flip-flops, Kerr effect, microringresonator, optical bistability.

Keywords: All optical flip-flops, Kerr effect, microring resonator, optical bistability.

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Authors: Janet Amiri, Shekoofeh Entesari, Kourosh Delavar, Mahshid Saadatmand, Nasrin Aghamohammad Rafie

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The beneficial effects of Si are mainly associated with its high deposition in plant tissue and enhancing their strength and rigidity. We investigated the role of Si against cadmium stress in (Echium C) in house green condition. When the seventh leaves was be appeared, plants were pretreated with five levels of Si: 0, 0.2, 0.5, 0.7and 1.5 mM Si (as sodium trisilicate, Na2(SiO2)3) and after that plants were treated with two levels of Cd (30 and 90 mM). The effects of Silicon and Cd were investigated on some physiological and biochemical parameters such as: lipid peroxidation (malondialdehyde (MDA) and other aldehydes, antocyanin and flavonoid content. Our results showed that Cd significantly increased MDA, other aldehydes, antocyanin and flavonoids content in Echium and silicon offset the negative effect and increased tolerance of Echium against Cd stress. From this results we concluded that Si increase membrane integrity and antioxidative ability in this plant against cd stress.

Keywords: Silicon, Cadmium, Echium, MDA, antocyanin, flavonoid

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Authors: Alexey P. Antropov, Alexander V. Ragutkin, Nicolay A. Yashtulov

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The original controlled technology for power active nanocomposite membrane-electrode assembly engineering on the basis of porous silicon is presented. The functional nanocomposites were studied by electron microscopy and cyclic voltammetry methods. The application possibility of the obtained nanocomposites as high performance renewable energy sources for micro-power electronic devices is demonstrated.

Keywords: Cyclic voltammetry, electron microscopy, nanotechnology, platinum-palladium nanocomposites, porous silicon, power activity, renewable energy sources.

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Authors: M. Bagci, H. Imrek, Omari M. Khalfan

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Materials added to the matrix help improving operating properties of a composite. This experimental study has targeted to investigate this aim where Silicon Oxide particles were added to glass fibre and epoxy resin at an amount of 15% to the main material to obtain a sort of new composite material. Erosive wear behavior of epoxy-resin dipped composite materials reinforced with glass fibre and Silicon Oxide under three different impingement angles (30°, 60° and 90°), three different impact velocities (23, 34 and 53 m/s), two different angular Aluminum abrasive particle sizes (approximately 200 and 400 μm) and the fibre orientation of 45° (45/-45) were investigated. In the test results, erosion rates were obtained as functions of impingement angles, impact velocities, particle sizes and fibre orientation. Moreover, materials with addition of Silicon Oxide filler material exhibited lower wear as compared to neat materials with no added filler material. In addition, SEM views showing worn out surfaces of the test specimens were scrutinized.

Keywords: Erosive wear, fibre orientation, GF/EP, silicon oxide.

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Authors: Jessie Yiying Quah, Vivian Netto, Jack Sheng Kee, Eric Mouchel La Fosse, Mi Kyoung Park

Abstract:

We present a dextran modified silicon microring resonator sensor for high density antibody immobilization. An array of sensors consisting of three sensor rings and a reference ring was fabricated and its surface sensitivity and the limit of detection were obtained using polyelectrolyte multilayers. The mass sensitivity and the limit of detection of the fabricated sensor ring are 0.35 nm/ng mm-2 and 42.8 pg/mm2 in air, respectively. Dextran modified sensor surface was successfully prepared by covalent grafting of oxidized dextran on 3-aminopropyltriethoxysilane (APTES) modified silicon sensor surface. The antibody immobilization on hydrogel dextran matrix improves 40% compared to traditional antibody immobilization method via APTES and glutaraldehyde linkage.

Keywords: Antibody immobilization, Dextran, Immunosensor, Label-free detection, Silicon micro-ring resonator

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Authors: Luc Conti, Dimitry Dumont-Fillon, Harald van Lintel, Eric Chappel

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Flow control valves comprise a silicon flexible membrane that deflects against a substrate, usually made of glass, containing pillars, an outlet hole, and anti-stiction features. However, there is a strong interest in using silicon instead of glass as substrate material, as it would simplify the process flow by allowing the use of well controlled anisotropic etching. Moreover, specific devices demanding a bending of the substrate would also benefit from the inherent outstanding mechanical strength of monocrystalline silicon. Unfortunately, direct Si-Si bonding is not easily achieved with highly structured wafers since residual stress may prevent the good adhesion between wafers. Using a thermoplastic polymer, such as parylene, as intermediate layer is not well adapted to this design as the wafer-to-wafer alignment is critical. An alternative anodic bonding method using an intermediate borosilicate layer has been successfully tested. This layer has been deposited onto the silicon substrate. The bonding recipe has been adapted to account for the presence of the SOI buried oxide and intermediate glass layer in order not to exceed the breakdown voltage. Flow control valves dedicated to infusion of viscous fluids at very high pressure have been made and characterized. The results are compared to previous data obtained using the standard anodic bonding method.

Keywords: Anodic bonding, evaporated glass, microfluidic valve, drug delivery.

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