Search results for: boron nitride

Authors: Tadahiro Wada, Koji Iwamoto

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In turning hardened steel, polycrystalline cubic boron nitride (cBN) compacts are widely used, due to their higher hardness and higher thermal conductivity. However, in milling hardened steel, fracture of cBN cutting tools readily occurs because they have poor fracture toughness. Therefore, coated cemented carbide tools, which have good fracture toughness and wear resistance, are generally widely used. In this study, hardened steel (ASTM D2, JIS SKD11, 60HRC) was milled with three physical vapor deposition (PVD)-coated cemented carbide end mill cutters in order to determine effective tool materials for cutting hardened steel at high cutting speeds. The coating films used were (Ti,W)N/(Ti,W,Si)N and (Ti,W)N/(Ti,W,Si,Al)N coating films. (Ti,W,Si,Al)N is a new type of coating film. The inner layer of the (Ti,W)N/(Ti,W,Si)N and (Ti,W)N/(Ti,W,Si,Al)N coating system is (Ti,W)N coating film, and the outer layer is (Ti,W,Si)N and (Ti,W,Si,Al)N coating films, respectively. Furthermore, commercial (Ti,Al)N-based coating film was also used. The following results were obtained: (1) In milling hardened steel at a cutting speed of 3.33 m/s, the tool wear width of the (Ti,W)N/(Ti,W,Si,Al)N-coated tool was smaller than that of the (Ti,W)N/(Ti,W,Si)N-coated tool. And, compared with the commercial (Ti,Al)N, the tool wear width of the (Ti,W)N/(Ti,W,Si,Al)N-coated tool was smaller than that of the (Ti,Al)N-coated tool. (2) The tool wear of the (Ti,W)N/(Ti,W,Si,Al)N-coated tool increased with an increase in cutting speed. (3) The (Ti,W)N/(Ti,W,Si,Al)N-coated cemented carbide was an effective tool material for high-speed cutting below a cutting speed of 3.33 m/s.

Keywords: cutting, physical vapor deposition (PVD) coating system, hardened steel, tool wear

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Authors: Hamdi Muhyuddin D. Barra, Henry J. Ramos

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Titanium nitride (TiN) has been synthesized using the sheet plasma negative ion source (SPNIS). The parameters used for its effective synthesis has been determined from previous experiments and studies. In this study, further enhancement of the deposition rate of TiN synthesis and advancement of the SPNIS operation is presented. This is primarily achieved by the addition of Sm-Co permanent magnets and a modification of the configuration in the TiN deposition process. The magnetic enhancement is aimed at optimizing the sputtering rate and the sputtering yield of the process. The Sm-Co permanent magnets are placed below the Ti target for better sputtering by argon. The Ti target is biased from –250V to – 350V and is sputtered by Ar plasma produced at discharge current of 2.5–4A and discharge potential of 60–90V. Steel substrates of dimensions 20x20x0.5mm3 were prepared with N2:Ar volumetric ratios of 1:3, 1:5 and 1:10. Ocular inspection of samples exhibit bright gold color associated with TiN. XRD characterization confirmed the effective TiN synthesis as all samples exhibit the (200) and (311) peaks of TiN and the non-stoichiometric Ti2N (220) facet. Cross-sectional SEM results showed increase in the TiN deposition rate of up to 0.35μm/min. This doubles what was previously obtained [1]. Scanning electron micrograph results give a comparative morphological picture of the samples. Vickers hardness results gave the largest hardness value of 21.094GPa.

Keywords: Chemical vapor deposition, Magnetized sheetplasma, Thin-film synthesis, Titanium nitride.

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Authors: D. Geringswald, B. Hintze

Abstract:

The miniaturization of circuits is advancing. During chip manufacturing, structures are filled for example by metal organic chemical vapor deposition (MOCVD). Since this process reaches its limits in case of very high aspect ratios, the use of alternatives such as the atomic layer deposition (ALD) is possible, requiring the extension of existing coating systems. However, it is an unsolved question to what extent MOCVD can achieve results similar as an ALD process. In this context, this work addresses the characterization of a metal organic vapor deposition of titanium nitride. Based on the current state of the art, the film properties coating thickness, sheet resistance, resistivity, stress and chemical composition are considered. The used setting parameters are temperature, plasma gas ratio, plasma power, plasma treatment time, deposition time, deposition pressure, number of cycles and TDMAT flow. The derived process instructions for unstructured wafers and inside a structure with high aspect ratio include lowering the process temperature and increasing the number of cycles, the deposition and the plasma treatment time as well as the plasma gas ratio of hydrogen to nitrogen (H₂:N₂). In contrast to the current process configuration, the deposited titanium nitride (TiN) layer is more uniform inside the entire test structure. Consequently, this paper provides approaches to employ the MOCVD for structures with increasing aspect ratios.

Keywords: ALD, high aspect ratio, PE-MOCVD, TiN.

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Authors: Nasim Abuali Galehdari, Venkat Mani, Ajit D. Kelkar

Abstract:

Space Radiation has become one of the major factors in successful long duration space exploration. Exposure to space radiation not only can affect the health of astronauts but also can disrupt or damage materials and electronics. Hazards to materials include degradation of properties, such as, modulus, strength, or glass transition temperature. Electronics may experience single event effects, gate rupture, burnout of field effect transistors and noise. Presently aluminum is the major component in most of the space structures due to its lightweight and good structural properties. However, aluminum is ineffective at blocking space radiation. Therefore, most of the past research involved studying at polymers which contain large amounts of hydrogen. Again, these materials are not structural materials and would require large amounts of material to achieve the structural properties needed. One of the materials to alleviate this problem is polymeric composite materials, which has good structural properties and use polymers that contained large amounts of hydrogen. This paper presents steps involved in fabrication of multi-functional hybrid sandwich panels that can provide beneficial radiation shielding as well as structural strength. Multifunctional hybrid sandwich panels were manufactured using vacuum assisted resin transfer molding process and were subjected to radiation treatment. Study indicates that various nanoparticles including Boron Nano powder, Boron Carbide and Gadolinium nanoparticles can be successfully used to block the space radiation without sacrificing the structural integrity.

Keywords: Multi-functional, polymer composites, radiation shielding, sandwich composites.

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Authors: Y. Liu, M. K. Bera, L. M. Kyaw, G. Q. Lo, E. F. Chor

Abstract:

The electrical and structural properties of Hf/Al/Ni/Au (20/100/25/50 nm) ohmic contact to n-GaN are reported in this study. Specific contact resistivities of Hf/Al/Ni/Au based contacts have been investigated as a function of annealing temperature and achieve the lowest value of 1.09´10-6 Ω·cm2 after annealing at 650 oC in vacuum. A detailed mechanism of ohmic contact formation is discussed. By using different chemical analyses, it is anticipated that the formation of Hf-Al-N alloy might be responsible to form low temperature ohmic contacts for the Hf-based scheme to n-GaN.

Keywords: Gallium nitride, ohmic contact, Hafnium

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Authors: M. Ardelean, F. Manea, A. Pop, J. Schoonman

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The presence of pharmaceuticals in the environment and especially in water has gained increasing attention. They are included in emerging class of pollutants, and for most of them, legal limits have not been set-up due to their impact on human health and ecosystem was not determined and/or there is not the advanced analytical method for their quantification. In this context, the development of various advanced analytical methods for the quantification of pharmaceuticals in water is required. The electrochemical methods are known to exhibit the great potential for high-performance analytical methods but their performance is in direct relation to the electrode material and the operating techniques. In this study, two types of carbon-based electrodes materials, i.e., boron-doped diamond (BDD) and carbon nanofiber (CNF)-epoxy composite electrodes have been investigated through voltammetric techniques for the detection of naproxen in water. The comparative electrochemical behavior of naproxen (NPX) on both BDD and CNF electrodes was studied by cyclic voltammetry, and the well-defined peak corresponding to NPX oxidation was found for each electrode. NPX oxidation occurred on BDD electrode at the potential value of about +1.4 V/SCE (saturated calomel electrode) and at about +1.2 V/SCE for CNF electrode. The sensitivities for NPX detection were similar for both carbon-based electrode and thus, CNF electrode exhibited superiority in relation to the detection potential. Differential-pulsed voltammetry (DPV) and square-wave voltammetry (SWV) techniques were exploited to improve the electroanalytical performance for the NPX detection, and the best results related to the sensitivity of 9.959 µA·µM^-1 were achieved using DPV. In addition, the simultaneous detection of NPX and fluoxetine -a very common antidepressive drug, also present in water, was studied using CNF electrode and very good results were obtained. The detection potential values that allowed a good separation of the detection signals together with the good sensitivities were appropriate for the simultaneous detection of both tested pharmaceuticals. These results reclaim CNF electrode as a valuable tool for the individual/simultaneous detection of pharmaceuticals in water.

Keywords: Boron-doped diamond electrode, carbon nanofiber-epoxy composite electrode, emerging pollutants, pharmaceuticals.

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Authors: R. Joseph Raviselvan, K. Ramanathan, P. Perumal, M. R. Thansekhar

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Hard coatings are widely used in cutting and forming tool industries. Titanium Nitride (TiN) possesses good hardness, strength, and corrosion resistance. The coating properties are influenced by many process parameters. The coatings were deposited on steel substrate by changing the process parameters such as substrate temperature, nitrogen flow rate and target power in a D.C planer magnetron sputtering. The structure of coatings were analysed using XRD. The hardness of coatings was found using Micro hardness tester. From the experimental data, a regression model was developed and the optimum response was determined using Response Surface Methodology (RSM).

Keywords: Hardness, RSM, sputtering, TiN XRD.

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Authors: M. Ertas, A. C. Onel, G. Ekinci, B. Toydemir, S. Durdu, M. Usta, L. Colakerol Arslan

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To develop AZ91D magnesium alloys with improved properties, we have applied TiN and VN/TiN multilayer coatings using DC magnetron sputter technique. Coating structure, surface morphology, chemical bonding and corrosion resistance of coatings were analyzed by x-ray diffraction (XRD), scanning electron microscope (SEM), x-ray photoelectron spectroscopy (XPS), and tafel extrapolation method, respectively. XPS analysis reveal that VN overlayer reacts with oxygen at the VN/TiN interface and forms more stable TiN layer. Morphological investigations and the corrosion results show that VN/TiN multilayer thin film coatings are quite effective to optimize the corrosion resistance of Mg alloys.

Keywords: AZ91D Mg alloys, High corrosion resistance, Transition metal nitride coatings, Magnetron sputter.

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Authors: W. Z. Wang, S. Todd, S. B. Dolmanan, K. B. Lee, L. Yuan, H. F. Sun, S. L. Selvaraj, M.Krishnakumar, G. Q. Lo, S. Tripathy

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The crystalline quality of the AlGaN/GaN high electron mobility transistor (HEMT) structure grown on a 200 mm silicon substrate has been investigated using UV-visible micro- Raman scattering and photoluminescence (PL). The visible Raman scattering probes the whole nitride stack with the Si substrate and shows the presence of a small component of residual in-plane stress in the thick GaN buffer resulting from a wafer bowing, while the UV micro-Raman indicates a tensile interfacial stress induced at the top GaN/AlGaN/AlN layers. PL shows a good crystal quality GaN channel where the yellow band intensity is very low compared to that of the near-band-edge transition. The uniformity of this sample is shown by measurements from several points across the epiwafer.

Keywords: Raman, photo luminescence, AlGaN/GaN, HEMT.

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Authors: S. M. Thahab, H. Abu Hassan, Z. Hassan

Abstract:

The optical properties of InGaN/GaN laser diode based on quaternary alloys stopper and superlattice layers are numerically studied using ISE TCAD (Integrated System Engineering) simulation program. Improvements in laser optical performance have been achieved using quaternary alloy as superlattice layers in InGaN/GaN laser diodes. Lower threshold current of 18 mA and higher output power and slope efficiency of 22 mW and 1.6 W/A, respectively, at room temperature have been obtained. The laser structure with InAlGaN quaternary alloys as an electron blocking layer was found to provide better laser performance compared with the ternary AlxGa1-xN blocking layer.

Keywords: Nitride semiconductors, InAlGaN quaternary, laserdiode, superlattice.

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Authors: N. Dahraoui, M. Boulakroune, D. Benatia

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In this paper, the improvement by deconvolution of the depth resolution in Secondary Ion Mass Spectrometry (SIMS) analysis is considered. Indeed, we have developed a new Tikhonov- Miller deconvolution algorithm where a priori model of the solution is included. This is a denoisy and pre-deconvoluted signal obtained from: firstly, by the application of wavelet shrinkage algorithm, secondly by the introduction of the obtained denoisy signal in an iterative deconvolution algorithm. In particular, we have focused the light on the effect of the iterations number on the evolution of the deconvoluted signals. The SIMS profiles are multilayers of Boron in Silicon matrix.

Keywords: DRF, in-depth resolution, multiresolution deconvolution, SIMS, wavelet shrinkage.

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Authors: Srikanta Bose, Sudip K. Mazumder

Abstract:

We report here, the results of molecular dynamics simulation of p-doped (Ga-face)GaN over n-doped (Siface)( 0001)4H-SiC hetero-epitaxial material system with one-layer each of Ga-flux and (Al-face)AlN, as the interface materials, in the form of, the total Density of States (DOS). It is found that the total DOS at the Fermi-level for the heavily p-doped (Ga-face)GaN and ndoped (Si-face)4H-SiC hetero-epitaxial system, with one layer of (Al-face)AlN as the interface material, is comparatively higher than that of the various cases studied, indicating that there could be good vertical conduction across the (Ga-face)GaN over (Si-face)(0001)4HSiC hetero-epitaxial material system.

Keywords: Molecular dynamics, GaN, 4H-SiC, hetero-epitaxy.

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Authors: N. Tugrul, A. S. Kipcak, E. MoroydorDerun, S. Piskin

Abstract:

Zinc borate is an important boron compound that can be used as multi-functional flame retardant additive due to its high dehydration temperature property. In this study, theraw materials of ZnSO₄.7H₂O, NaOH and H₃BO₃werecharacterized by X-Ray Diffraction (XRD) and Fourier Transform Infrared Spectroscopy (FT-IR) and used in the synthesis of zinc borates.The synthesis parameters were set to 100°C reaction temperature and 120 minutes of reaction time, with different molar ratio of starting materials (ZnSO₄.7H₂O:NaOH:H₃BO₃). After the zinc borate synthesis, the identifications of the products were conducted by XRD and FT-IR. As a result,Zinc Oxide Borate Hydrate [Zn₃B₆O₁₂.3.5H₂O], were synthesized at the molar ratios of 1:1:3, 1:1:4, 1:2:5 and 1:2:6. Among these ratios 1:2:6 had the best results.

Keywords: Zinc borate, ZnSO4.7H2O, NaOH, H3BO3, XRD, FT-IR.

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Authors: J. H. Choi, S. J. Kim, M. S. Jung, S. J. Kim, S. J. Joo, S. C. Kim

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There are a many of needs for the development of SiC-based hydrogen sensor for harsh environment applications. We fabricated and investigated Pd/Ta2O5/SiC-based hydrogen sensors with MOS capacitor structure for high temperature process monitoring and leak detection applications in such automotive, chemical and petroleum industries as well as direct monitoring of combustion processes. In this work, we used silicon carbide (SiC) as a substrate to replace silicon which operating temperatures are limited to below 200°C. Tantalum oxide was investigated as dielectric layer which has high permeability for hydrogen gas and high dielectric permittivity, compared with silicon dioxide or silicon nitride. Then, electrical response properties, such as I-V curve and dependence of capacitance on hydrogen concentrations were analyzed in the temperature ranges of room temperature to 500°C for performance evaluation of the sensor.

Keywords: High temperature, hydrogen sensor, SiC, Ta2O5 dielectric layer.

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Authors: H. Hashim, B. F. Usher

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InGaAsN and GaAsN epitaxial layers with similar nitrogen compositions in a sample were successfully grown on a GaAs (001) substrate by solid source molecular beam epitaxy. An electron cyclotron resonance nitrogen plasma source has been used to generate atomic nitrogen during the growth of the nitride layers. The indium composition changed from sample to sample to give compressive and tensile strained InGaAsN layers. Layer characteristics have been assessed by high-resolution x-ray diffraction to determine the relationship between the lattice constant of the GaAs1-yNy layer and the fraction x of In. The objective was to determine the In fraction x in an InxGa1-xAs1-yNy epitaxial layer which exactly cancels the strain present in a GaAs1-yNy epitaxial layer with the same nitrogen content when grown on a GaAs substrate.

Keywords: Indium, molecular beam epitaxy, nitrogen, straincancellation.

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Authors: Shiyang Zhu, G. Q. Lo, D. L. Kwong

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Silicon photonics has generated an increasing interest in recent years mainly for optical communications optical interconnects in microelectronic circuits or bio-sensing applications. The development of elementary passive and active components (including detectors and modulators), which are mainly fabricated on the silicon on insulator platform for CMOS-compatible fabrication, has reached such a performance level that the integration challenge of silicon photonics with microelectronic circuits should be addressed. Since crystalline silicon can only be grown from another silicon crystal, making it impossible to deposit in this state, the optical devices are typically limited to a single layer. An alternative approach is to integrate a photonic layer above the CMOS chip using back-end CMOS fabrication process. In this paper, various materials, including silicon nitride, amorphous silicon, and polycrystalline silicon, for this purpose are addressed.

Keywords: Silicon photonics, CMOS, Integration.

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Authors: E. Moroydor Derun, F. T. Senberber, A. S. Kipcak, N. Tugrul, S. Piskin

Abstract:

Dehydration behavior gives a hint about thermal properties of materials. It is important for the usage areas and transportation of minerals. Magnesium borates can be used as additive materials in areas such as in the production of superconducting materials, in the composition of detergents, due to the content of boron in the friction-reducing additives in oils and insulating coating compositions due to their good mechanic and thermal properties. In this study, thermal dehydration behavior of admontite (MgO(B2O3)3.7(H2O)), which is a kind of magnesium borate mineral, is experimented by microwave energy at 360W. Structure of admontite is suitable for the investigation of dehydration behavior by microwave because of its seven moles of crystal water. It is seen that admontite lost its 28.7% of weight at the end of the 120 minutes heating in microwave furnace. 

Keywords: Admontite, dehydration, magnesium borate, microwave.

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Authors: Abo-El-Nour N. Abd-Alla, Fatimah A. Alsheikh

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This study deals with the phenomena of reflection and transmission (refraction) of qSV-waves, for an incident of quasi transverse vertically waves, at a plane interface of two semi-infinite piezoelectric elastic media under the influence of the initial stresses. The relations governing the reflection and transmission coefficients of these reflected waves for various suitable boundary conditions are derived. We have shown analytically that reflection and transmission coefficients of (qP) and (qSV) waves depend upon the angle of incidence, the parameters of electric potential, the material constants of the medium as will as the initial stresses presented in the media. The numerical calculations of the reflection and transmission amplitude ratios for different values of initial stresses have been carried out by computer for different materials as examples and the results are given in the form of graphs. Finally, some of particular cases are considered.

Keywords: Quasi plane vertical transverse waves, reflection and transmission coefficients, initial stresses, PZT-5H Ceramic, Aluminum Nitride (AlN), Piezoelectricity

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Authors: G. Çelik Gül, F. Kurtuluş

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Colemanite is the most common borate mineral, and the main source of the boron required by plants, human, and earth. Transition metals exhibit optical and physical properties such as; non-linear optical character, structural diversity, thermal stability, long cycle life and luminescent radiation. The doping of colemanite with a transition metal, bring it very interesting and attractive properties which make them applicable in industry. Iron doped calcium borate was synthesized by conventional solid state method at 1200 °C for 12 h with a systematic pathway. X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, scanning electron microscopy/energy dispersive analyze (SEM/EDS) were used to characterize structural and morphological properties. Also, thermal properties were recorded by thermogravimetric-differential thermal analysis (TG/DTA). 

Keywords: Colemanite, conventional synthesis, powder x-ray diffraction, borates.

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Authors: Betül Özgenç Kaya, Soner Kuslu, Sabri Çolak, Turan Çalban

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Ulexite (Na2O.2CaO.5B2O3.16H2O) is boron mineral that is found in large quantities in the Turkey and world. In this study, the dissolution of this mineral in the disodium hydrogen phosphate solutions has been studied. Temperature, concentration, stirring speed, solid liquid ratio and particle size were selected as parameters. The experimental results were successfully correlated by linear regression using Statistica program. Dissolution curves were evaluated shrinking core models for solid-fluid systems. It was observed that increase in the reaction temperature and decrease in the solid/liquid ratio causes an increase the dissolution rate of ulexite. The activation energy was found to be 63.4 kJ/mol. The leaching of ulexite was controlled by chemical reaction.

Keywords: Disodium hydrogen phosphate, Leaching kinetics, Ulexite.

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Authors: A.Seif, H.Aghaie, K.Majlesi

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A computational study at the level density functional theory (DFT) was carried out to investigate the influences of Si and C-doping on the 14N and 27Al quadrupole coupling constant in the (10, 0) zigzag single ? walled Aluminum-Nitride nanotube (AlNNT). To this aim, a 1.16nm, length of AlNNT consisting of 40 Al atoms and 40 N atoms were selected where the end atoms are capped by hydrogen atom. To follow the purpose, three Si atoms and three C atoms were doped instead of three Al atoms and three N atoms as a central ring in the surface of the Si and C-doped AlNNT. At first both of systems optimized at the level of BLYP method and 6-31G (d) basis set and after that, the NQR parameters were calculated at the level BLYP method and 6-311+G** basis set in two optimized forms. The calculate CQ values for both optimized AlNNT systems, raw and Si and C-doped, reveal different electronic environments in the mentioned systems. It was also demonstrated that the end nuclei have the largest CQ values in both considered AlNNT systems. All the calculations were carried out using Gaussian 98 package of program.

Keywords: DFT, Quadrupole Coupling Constant, Si and CDoping, Single-Walled AlN nanotubes.

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Authors: M. M. Fercan, A. S. Kipcak, O. Dere Ozdemir, M. B. Piskin, E. Moroydor Derun

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Coffee is a widely consumed beverage with many components such as caffeine, flavonoids, phenolic compounds, and minerals. Coffee consumption continues to increase due to its physiological effects, its pleasant taste, and aroma. Robusta and Arabica are two basic types of coffee beans. The coffee bean used for Turkish coffee is Arabica. There are many elements in the structure of coffee and have various effect on human health such as Sodium (Na), Boron (B), Magnesium (Mg) and Iron (Fe). In this study, the amounts of Mg, Na, Fe, and B contents in Turkish coffee are determined and effect of sugar addition is investigated for conscious consumption. The analysis of the contents of coffees was determined by using inductively coupled plasma optical emission spectrometry (ICP-OES). From the results of the experiments the Mg, Na, Fe and B contents of Turkish coffee after sugar addition were found as 19.83, 1.04, 0.02, 0.21 ppm, while without using sugar these concentrations were found 21.46, 0.81, 0.008 and 0.16 ppm. In addition, element contents were calculated for 1, 3 and 5 cups of coffee in order to investigate the health effects.

Keywords: Health effect, ICP-OES, sugar, Turkish coffee.

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Authors: AlNPhannee Saengkaew, Armin Dadgar, Juergen Blaesing, Thomas Hempel, Sakuntam Sanorpim, Chanchana Thanachayanont, Visittapong Yordsri, Watcharee Rattanasakulthong, Alois Krost

Abstract:

Group-III nitride material as particularly AlxGa1-xN is one of promising optoelectronic materials to require for shortwavelength devices. To achieve the high-quality AlxGa1-xN films for a high performance of such devices, AlN-nucleation layers are the important factor. To improve the AlN-nucleation layers with a variation of Ga-addition, XRD measurements were conducted to analyze the crystalline quality of the subsequent Al0.1Ga0.9N with the minimum ω-FWHMs of (0002) and (10-10) reflections of 425 arcsec and 750 arcsec, respectively. SEM and AFM measurements were performed to observe the surface morphology and TEM measurements to identify the microstructures and orientations. Results showed that the optimized Ga-atoms in the Al(Ga)Nnucleation layers improved the surface diffusion to form moreuniform crystallites in structure and size, better alignment of each crystallite, and better homogeneity of island distribution. This, hence, improves the orientation of epilayers on the Si-surface and finally improves the crystalline quality and reduces the residual strain of subsequent Al0.1Ga0.9N layers.

Keywords: AlGaN, UV-LEDs, seed layers, AFM, TEM

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Authors: N.S. Pradhan, S.K. Dubey, A. D.Yadav, Arvind Singh, D.C. Kothari

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Un-doped GaN film of thickness 1.90 mm, grown on sapphire substrate were uniformly implanted with 325 keV Mn+ ions for various fluences varying from 1.75 x 1015 - 2.0 x 1016 ions cm-2 at 3500 C substrate temperature. The structural, morphological and magnetic properties of Mn ion implanted gallium nitride samples were studied using XRD, AFM and SQUID techniques. XRD of the sample implanted with various ion fluences showed the presence of different magnetic phases of Ga3Mn, Ga0.6Mn0.4 and Mn4N. However, the compositions of these phases were found to be depended on the ion fluence. AFM images of non-implanted sample showed micrograph with rms surface roughness 2.17 nm. Whereas samples implanted with the various fluences showed the presence of nano clusters on the surface of GaN. The shape, size and density of the clusters were found to vary with respect to ion fluence. Magnetic moment versus applied field curves of the samples implanted with various fluences exhibit the hysteresis loops. The Curie temperature estimated from zero field cooled and field cooled curves for the samples implanted with the fluence of 1.75 x 1015, 1.5 x 1016 and 2.0 x 1016 ions cm-2 was found to be 309 K, 342 K and 350 K respectively.

Keywords: GaN, Ion implantation, XRD, AFM, SQUID

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Authors: E. Moroydor Derun, A. S. Kipcak, A. Kaplan, S. Piskin

Abstract:

Magnesium wastes are produced by many industrial activities. This waste problem is becoming a future problem for the world. Magnesium borates have many advantages such as; high corrosion resistance, heat resistance, high coefficient of elasticity and can also be used in the production of material against radiation. Addition, magnesium borates have great potential in sectors including ceramic and detergents industry and superconducting materials. In this study, using the starting materials of waste magnesium and H3BO3 the hydrothermal method was applied at a moderate temperature of 70oC. Several mole ratios of waste magnesium to H3BO3 are selected as; 1:2, 1:4, 1:6, 1:8, 1:10. Reaction time was determined as 1 hour. After the synthesis, X-Ray Diffraction (XRD) and Fourier Transform Infrared Spectroscopy (FT-IR) techniques are applied to products. As a result the forms of mcallisterite “Mg2(B6O7(OH)6)2.9(H2O)”, admontite “MgO(B2O3)3.7(H2O)” and magnesium boron hydrate (MgO(B2O3)3.6(H2O)” are obtained. 

Keywords: Hydrothermal synthesis, magnesium borates, waste magnesium.

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Authors: Bijay Kumar Sahoo, Ashok Kumar Srivastav

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We have investigated the effect of piezoelectric (PZ) polarization property in binary as well as in ternary wurtzite nitrides. It is found that with the presence of PZ polarization property, the phonon group velocity is modified. The change in phonon group velocity due to PZ polarization effect directly depends on piezoelectric tensor value. Using different piezoelectric tensor values recommended by different workers in the literature, percent change in group velocities of phonons has been estimated. The Debye temperatures and frequencies of binary nitrides GaN, AlN and InN are also calculated using the modified group velocities. For ternary nitrides AlxGa(1-x)N, InxGa(1-x)N and InxAl(1-x)N, the phonon group velocities have been calculated as a functions of composition. A small positive bowing is observed in phonon group velocities of ternary alloys. Percent variations in phonon group velocities are also calculated for a straightforward comparison among ternary nitrides. The results are expected to show a change in phonon relaxation rates and thermal conductivity of III-nitrides when piezoelectric polarization property is taken into consideration.

Keywords: Wirtzite nitrides, piezoelectric polarization, Phonon group velocity, Debye frequency and Debye temperature.

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Authors: S. M. Thahab, H. Abu Hassan, Z. Hassan

Abstract:

The InAlGaN alloy has only recently began receiving serious attention into its growth and application. High quality InGaN films have led to the development of light emitting diodes (LEDs) and blue laser diodes (LDs). The quaternary InAlGaN however, represents a more versatile material since the bandgap and lattice constant can be independently varied. We report an ultraviolet (UV) quaternary InAlGaN multi-quantum wells (MQWs) LD study by using the simulation program of Integrated System Engineering (ISE TCAD). Advanced physical models of semiconductor properties were used in order to obtain an optimized structure. The device performance which is affected by piezoelectric and thermal effects was studied via drift-diffusion model for carrier transport, optical gain and loss. The optical performance of the UV LD with different numbers of quantum wells was numerically investigated. The main peak of the emission wavelength for double quantum wells (DQWs) was shifted from 358 to 355.8 nm when the forward current was increased. Preliminary simulated results indicated that better output performance and lower threshold current could be obtained when the quantum number is four, with output power of 130 mW and threshold current of 140 mA.

Keywords: Nitride semiconductors, InAlGaN quaternary, UVLD, numerical simulation.

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Authors: M. Yildirim, A. S. Kipcak, F. T. Senberber, M. O. Asensio, E. M. Derun, S. Piskin

Abstract:

Potassium borates, which are widely used in welding and metal refining industry, as a lubricating oil additive, cement additive, fiberglass additive and insulation compound, are one of the important groups of borate minerals. In this study the production of a potassium borate mineral via hydrothermal method is aimed. The potassium source of potassium nitrate (KNO3) was used along with a sodium source of sodium hydroxide (NaOH) and boron source of boric acid (H3BO3). The constant parameters of reaction temperature and reaction time were determined as 80°C and 1 h, respectively. The molar ratios of 1:1:3 (as KNO3:NaOH:H3BO3), 1:1:4, 1:1:5, 1:1:6 and 1:1:7 were used. Following the synthesis the identifications of the produced products were conducted by X-Ray Diffraction (XRD), Fourier Transform Infrared Spectroscopy (FT-IR) and Raman Spectroscopy. The results of the experiments and analysis showed in the ratio of 1:1:6, the Santite mineral with powder diffraction file number (pdf no.) of 01-072-1688, which is known as potassium pentaborate (KB5O8·4H2O) was synthesized as best.

Keywords: Hydrothermal synthesis, potassium borate, potassium nitrate, santite.

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Authors: Muhibul Haque Bhuyan

Abstract:

This paper reports on the impact study with the variation of the gate insulation material and thickness on different models of pocket implanted sub-100 nm n-MOS device. The gate materials used here are silicon dioxide (SiO₂), aluminum silicate (Al₂SiO₅), silicon nitride (Si₃N₄), alumina (Al₂O₃), hafnium silicate (HfSiO₄), tantalum pentoxide (Ta₂O₅), hafnium dioxide (HfO₂), zirconium dioxide (ZrO₂), and lanthanum oxide (La₂O₃) upon a p-type silicon substrate material. The gate insulation thickness was varied from 2.0 nm to 3.5 nm for a 50 nm channel length pocket implanted n-MOSFET. There are several models available for this device. We have studied and simulated threshold voltage model incorporating drain and substrate bias effects, surface potential, inversion layer charge, pinch-off voltage, effective electric field, inversion layer mobility, and subthreshold drain current models based on two linear symmetric pocket doping profiles. We have changed the values of the two parameters, viz. gate insulation material and thickness gradually fixing the other parameter at their typical values. Then we compared and analyzed the simulation results. This study would be helpful for the nano-scaled MOS device designers for various applications to predict the device behavior.

Keywords: Linear symmetric pocket profile, pocket implanted n-MOS Device, model, impact of gate material, insulator thickness.

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Authors: I. Kurashvili, G. Darsavelidze, T. Kimeridze, G. Chubinidze, I. Tabatadze

Abstract:

At present, a number of modern semiconductor devices based on SiGe alloys have been created in which the latest achievements of high technologies are used. These devices might cause significant changes to networking, computing, and space technology. In the nearest future new materials based on SiGe will be able to restrict the A³B⁵ and Si technologies and firmly establish themselves in medium frequency electronics. Effective realization of these prospects requires the solution of prediction and controlling of structural state and dynamical physical –mechanical properties of new SiGe materials. Based on these circumstances, a complex investigation of structural defects and structural-sensitive dynamic mechanical characteristics of SiGe alloys under different external impacts (deformation, radiation, thermal cycling) acquires great importance. Internal friction (IF) and shear modulus temperature and amplitude dependences of the monocrystalline boron-doped Si_1-xGe_x(x≤0.05) alloys grown by Czochralski technique is studied in initial and ⁶⁰Co gamma-irradiated states. In the initial samples, a set of dislocation origin relaxation processes and accompanying modulus defects are revealed in a temperature interval of 400-800 ⁰C. It is shown that after gamma-irradiation intensity of relaxation internal friction in the vicinity of 280 ⁰C increases and simultaneously activation parameters of high temperature relaxation processes reveal clear rising. It is proposed that these changes of dynamical mechanical characteristics might be caused by a decrease of the dislocation mobility in the Cottrell atmosphere enriched by the radiation defects.

Keywords: Gamma-irradiation, internal friction, shear modulus, SiGe alloys.

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