%0 Journal Article %A Y. Liu and M. K. Bera and L. M. Kyaw and G. Q. Lo and E. F. Chor %D 2012 %J International Journal of Electrical and Computer Engineering %B World Academy of Science, Engineering and Technology %I Open Science Index 69, 2012 %T Low resistivity Hf/Al/Ni/Au Ohmic Contact Scheme to n-Type GaN %U https://publications.waset.org/pdf/6868 %V 69 %X The electrical and structural properties of Hf/Al/Ni/Au (20/100/25/50 nm) ohmic contact to n-GaN are reported in this study. Specific contact resistivities of Hf/Al/Ni/Au based contacts have been investigated as a function of annealing temperature and achieve the lowest value of 1.09´10-6 Ω·cm2 after annealing at 650 oC in vacuum. A detailed mechanism of ohmic contact formation is discussed. By using different chemical analyses, it is anticipated that the formation of Hf-Al-N alloy might be responsible to form low temperature ohmic contacts for the Hf-based scheme to n-GaN. %P 957 - 960