@article{(Open Science Index):https://publications.waset.org/pdf/6868, title = {Low resistivity Hf/Al/Ni/Au Ohmic Contact Scheme to n-Type GaN}, author = {Y. Liu and M. K. Bera and L. M. Kyaw and G. Q. Lo and E. F. Chor}, country = {}, institution = {}, abstract = {The electrical and structural properties of Hf/Al/Ni/Au (20/100/25/50 nm) ohmic contact to n-GaN are reported in this study. Specific contact resistivities of Hf/Al/Ni/Au based contacts have been investigated as a function of annealing temperature and achieve the lowest value of 1.09´10-6 Ω·cm2 after annealing at 650 oC in vacuum. A detailed mechanism of ohmic contact formation is discussed. By using different chemical analyses, it is anticipated that the formation of Hf-Al-N alloy might be responsible to form low temperature ohmic contacts for the Hf-based scheme to n-GaN.}, journal = {International Journal of Electrical and Computer Engineering}, volume = {6}, number = {9}, year = {2012}, pages = {957 - 960}, ee = {https://publications.waset.org/pdf/6868}, url = {https://publications.waset.org/vol/69}, bibsource = {https://publications.waset.org/}, issn = {eISSN: 1307-6892}, publisher = {World Academy of Science, Engineering and Technology}, index = {Open Science Index 69, 2012}, }