Search results for: Vertical drain

Authors: Seyed Abolhasan Naeini, Ali Namaei

Abstract:

This study presents the effect of prefabricated vertical drain system properties on embankment behavior by calculating the settlement, lateral displacement and induced excess pore pressure by numerical method. In order to investigate this behavior, three different prefabricated vertical drains have been simulated under an embankment. The finite element software PLAXIS has been carried out for analyzing the displacements and excess pore pressures. The results showed that the consolidation time and induced excess pore pressure are highly depended to the discharge capacity of the prefabricated vertical drain. The increase in the discharge capacity leads to decrease the consolidation process and the induced excess pore pressure. Moreover, it was seen that the vertical drains spacing does not have any significant effect on the consolidation time. However, the increase in the drains spacing would decrease the system stiffness.

Keywords: Vertical drain, prefabricated, consolidation, embankment.

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Authors: N. Shen, T. T. Le, H. Y. Yu, Z. X. Chen, K. T. Win, N. Singh, G. Q. Lo, D. -L. Kwong

Abstract:

In this paper, we present a vertical nanowire thin film transistor with gate-all-around architecture, fabricated using CMOS compatible processes. A novel method of fabricating polysilicon vertical nanowires of diameter as small as 30 nm using wet-etch is presented. Both n-type and p-type vertical poly-silicon nanowire transistors exhibit superior electrical characteristics as compared to planar devices. On a poly-crystalline nanowire of 30 nm diameter, high Ion/Ioff ratio of 106, low drain-induced barrier lowering (DIBL) of 50 mV/V, and low sub-threshold slope SS~100mV/dec are demonstrated for a device with channel length of 100 nm.

Keywords: Nanowire (NW), Gate-all-around (GAA), polysilicon (poly-Si), thin-film transistor (TFT).

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Authors: Z. X. Chen, T. S. Phua, X. P. Wang, G. -Q. Lo, D. -L. Kwong

Abstract:

This paper presents device simulations on the vertical silicon nanowire tunneling FET (VSiNW TFET). Simulations show that a narrow nanowire and thin gate oxide is required for good performance, which is expected even for conventional MOSFETs. The gate length also needs to be more than the nanowire diameter to prevent short channel effects. An effect more unique to TFET is the need for abrupt source to channel junction, which is shown to improve the performance. The ambipolar effect suppression by reducing drain doping concentration is also explored and shown to have little or no effect on performance.

Keywords: Device simulation, MEDICI, tunneling FET (TFET), vertical silicon nanowire.

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Authors: Muhammad Wajid Tahir, Rubina Kauser, Majid Ali Tahir

Abstract:

Pakistani doctors (MBBS) are emigrating towards developed countries for professional adjustments. This study aims to highlight causes and consequences of doctors- brain drain from Pakistan. Primary data was collected from Mayo Hospital, Lahore by interviewing doctors (n=100) through systematic random sampling technique. It found that various socio-economic and political conditions are working as push and pull factors for brain drain of doctors in Pakistan. Majority of doctors (83%) declared poor remunerations and professional infrastructure of health department as push factor of doctors- brain drain. 81% claimed that continuous instability in political situation and threats of terrorism are responsible for emigration of doctors. 84% respondents considered fewer opportunities of further studies responsible for their emigration. Brain drain of doctors is affecting health sector-s policies / programs, standard doctor-patient ratios and quality of health services badly.

Keywords: Brain Drain, Emigration, Remuneration, Politicalinstability, MBBS doctors

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Authors: E. Yosry, W. Fikry, A. El-henawy, M. Marzouk

Abstract:

This work offers a study of new simple compact model of dual-drain Magnetic Field Effect Transistor (MAGFET) including geometrical effects and biasing dependency. An explanation of the sensitivity is investigated, involving carrier deflection as the dominant operating principle. Finally, model verification with simulation results is introduced to ensure that acceptable error of 2% is achieved.

Keywords: MAGFET, Modeling, Simulation, Split-drain.

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Authors: Muhibul Haque Bhuyan, Quazi D. M. Khosru

Abstract:

Carrier scatterings in the inversion channel of MOSFET dominates the carrier mobility and hence drain current. This paper presents an analytical model of the subthreshold drain current incorporating the effective electron mobility model of the pocket implanted nano scale n-MOSFET. The model is developed by assuming two linear pocket profiles at the source and drain edges at the surface and by using the conventional drift-diffusion equation. Effective electron mobility model includes three scattering mechanisms, such as, Coulomb, phonon and surface roughness scatterings as well as ballistic phenomena in the pocket implanted n-MOSFET. The model is simulated for various pocket profile and device parameters as well as for various bias conditions. Simulation results show that the subthreshold drain current data matches the experimental data already published in the literature.

Keywords: Linear Pocket Profile, Pocket Implanted n-MOSFET, Subthreshold Drain Current and Effective Mobility Model.

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Authors: A. Hamdoune, M. Abdelmoumene, A. Hamroun

Abstract:

The objective of this paper is to simulate static I-V and dynamic characteristics of an appropriated and recessed n-GaN/AlxGa1-xN/GaN high electron mobility (HEMT). Using SILVACO TCAD device simulation, and optimized technological parameters; we calculate the drain-source current (lDS) as a function of the drain-source voltage (VDS) for different values ​​of the gate-source voltage (VGS), and the drain-source current (lDS) depending on the gate-source voltage (VGS) for a drain-source voltage (VDS) of 20 V, for various temperatures. Then, we calculate the cut-off frequency and the maximum oscillation frequency for different temperatures.

We obtain a high drain-current equal to 60 mA, a low knee voltage (Vknee) of 2 V, a high pinch-off voltage (VGS0) of 53.5 V, a transconductance greater than 600 mS/mm, a cut-off frequency (f_T) of about 330 GHz, and a maximum oscillation frequency (fmax) of about 1 THz.

Keywords: n-GaN/AlGaN/GaN HEMT, drain-source current (IDS), transconductance (gm), cut-off frequency (fT), maximum oscillation frequency (fmax).

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Authors: George C. Yao, Chao-Yu Tu, Wei-Chung Chen, Fung-Wen Kuo, Yu-Shan Chang

Abstract:

Building structures are subjected to both horizontal and vertical ground motions during earthquakes, but only the horizontal ground motion has been extensively studied and considered in design. Most of the prevailing seismic codes assume the vertical component to be 1/2 to 2/3 of the horizontal one. In order to understand the building responses from vertical ground motions, many earthquakes records are studied in this paper. System identification methods (ARX Model) are used to analyze the strong motions and to find out the characteristics of the vertical amplification factors and the natural frequencies of buildings. Analysis results show that the vertical amplification factors for high-rise buildings and low-rise building are 1.78 and 2.52 respectively, and the average vertical amplification factor of all buildings is about 2. The relationship between the vertical natural frequency and building height was regressed to a suggested formula in this study. The result points out an important message; the taller the building is, the greater chance of resonance of vertical vibration on the building will be.

Keywords: Vertical ground motion, vertical amplification factor, natural frequency, component.

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Authors: Salam Khalid Al-Agha, Inamullah Bhatti, Hossam Adel Zaqoot, Shaukat Hayat Khan, Abdul Khalique Ansari

Abstract:

This paper presents the results of preliminary assessment of water quality along the coastal areas in the vicinity of Left Bank Outfall Drainage (LBOD) and Tidal Link Drain (TLD) in Sindh province after the cyclone 2A occurred in 1999. The water samples were collected from various RDs of Tidal Link Drain and lakes during September 2001 to April 2002 and were analysed for salinity, nitrite, phosphate, ammonia, silicate and suspended material in water. The results of the study showed considerable variations in water quality depending upon the location along the coast in the vicinity of LBOD and RDs. The salinity ranged between 4.39–65.25 ppt in Tidal Link Drain samples whereas 2.4–38.05 ppt in samples collected from lakes. The values of suspended material at various RDs of Tidal Link Drain ranged between 56.6–2134 ppm and at the lakes between 68–297 ppm. The data of continuous monitoring at RD–93 showed the range of PO4 (8.6–25.2 μg/l), SiO3 (554.96–1462 μg/l), NO2 (0.557.2–25.2 μg/l) and NH3 (9.38–23.62 μg/l). The concentration of nutrients in water samples collected from different RDs was found in the range of PO4 (10.85 to 11.47 μg/l), SiO3 (1624 to 2635.08 μg/l), NO2 (20.38 to 44.8 μg/l) and NH3 (24.08 to 26.6 μg/l). Sindh coastal areas which situated at the north-western boundary the Arabian Sea are highly vulnerable to flood damages due to flash floods during SW monsoon or impact of sea level rise and storm surges coupled with cyclones passing through Arabian Sea along Pakistan coast. It is hoped that the obtained data in this study would act as a database for future investigations and monitoring of LBOD and Tidal Link Drain coastal waters.

Keywords: Tidal Link Drain, Salinity, Nutrients, Nitrite salts, Coastal areas.

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Authors: W. Benaatou, A. Latif

Abstract:

In this document we studied more in detail the Performances of the vertical handover in the networks WLAN, WiMAX, UMTS before studying of it the Procedure of Handoff Vertical, the whole buckled by simulations putting forward the performances of the handover in the heterogeneous networks. The goal of Vertical Handover is to carry out several accesses in real-time in the heterogeneous networks. This makes it possible a user to use several networks (such as WLAN UMTS andWiMAX) in parallel, and the system to commutate automatically at another basic station, without disconnecting itself, as if there were no cut and with little loss of data as possible.

Keywords: Vertical handoff, WLAN, UMTS, WIMAX, Heterogeneous.

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Authors: Dawit Burusie Abdi, Mamidala Jagadesh Kumar

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In this paper, using 2D TCAD simulations, the application of a dual material gate (DMG) for suppressing ambipolar conduction in a tunnel field effect transistor (TFET) is demonstrated. Using the proposed DMG concept, the ambipolar conduction can be effectively suppressed even if the drain doping is as high as that of the source doping. Achieving this symmetrical doping, without the ambipolar conduction in TFETs, gives the advantage of realizing both n-type and p-type devices with the same doping sequences. Furthermore, the output characteristics of the DMG TFET exhibit a good saturation when compared to that of the gate-drain underlap approach. This improved behavior of the DMG TFET makes it a good candidate for inverter based logic circuits.

Keywords: Dual material gate, suppressing ambipolar current, symmetrically doped TFET, tunnel FETs, PNPN TFET.

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Authors: M. Yoneda

Abstract:

The purpose of this study is to identify human walking vertical force by using FFT power spectrum density from the experimental acceleration data of the human body. An experiment on human walking is carried out on a stationary floor especially paying attention to higher components of dynamic vertical walking force. Based on measured acceleration data of the human lumbar part, not only in-phase component with frequency of 2fw, 3fw, but also in-opposite-phase component with frequency of 0.5 fw, 1.5 fw, 2.5 fw where fw is the walking rate is observed. The vertical vibration of pedestrian bridge induced by higher components of human walking vertical force is also discussed in this paper. A full scale measurement for the existing pedestrian bridge with center span length of 33 m is carried out focusing on the resonance phenomenon due to higher components of human walking vertical force. Dynamic response characteristics excited by these vertical higher components of human walking are revealed from the dynamic design viewpoint of pedestrian bridge.

Keywords: Simplified method, Human walking vertical force, Higher component, Pedestrian bridge vibration.

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Authors: Yomna Amr Ahmed Lotfi Koraim, Dalia Moati Rasmi Elkhateeb

Abstract:

Vertical landscape is introduced in this study as an alternative innovative technology for urban sustainable developments for its diverse environmental, economic, and psycho-social advantages. The main aim is to investigate the social acceptance of vertical landscape in Cairo, Egypt. The study objectives were to explore the perceptions of residents concerning this certain phenomenon and their opinions about its implementation. Survey questionnaires were administrated to 60 male and female residents from the Greater Cairo area. Despite the various concerns expressed about the application of vertical landscape, there was a clear majority of approval about its suitability. This is quite encouraging for the prospect of vertical landscape implementation in Cairo, Egypt.

Keywords: Vertical landscape, green facades, social acceptance, sustainable urban development.

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Authors: Muhibul Haque Bhuyan, Quazi D. M. Khosru

Abstract:

Carriers scattering in the inversion channel of n- MOSFET dominates the drain current. This paper presents an effective electron mobility model for the pocket implanted nano scale n-MOSFET. The model is developed by using two linear pocket profiles at the source and drain edges. The channel is divided into three regions at source, drain and central part of the channel region. The total number of inversion layer charges is found for these three regions by numerical integration from source to drain ends and the number of depletion layer charges is found by using the effective doping concentration including pocket doping effects. These two charges are then used to find the effective normal electric field, which is used to find the effective mobility model incorporating the three scattering mechanisms, such as, Coulomb, phonon and surface roughness scatterings as well as the ballistic phenomena for the pocket implanted nano-scale n-MOSFET. The simulation results show that the derived mobility model produces the same results as found in the literatures.

Keywords: Linear Pocket Profile, Pocket Implanted n-MOSFET, Effective Electric Field and Effective Mobility Model.

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Authors: Cheng-Hsien Chang, Jyi-Tsong Lin, Po-Hsieh Lin, Hung-Pei Hsu, Chan-Hsiang Chang, Ming-Tsung Shih, Shih-Chuan Tseng, Min-Yan Lin

Abstract:

In this paper, we have proposed a novel FinFET with extended body under the poly gate, which is called EB-FinFET, and its characteristic is demonstrated by using three-dimensional (3-D) numerical simulation. We have analyzed and compared it with conventional FinFET. The extended body height dependence on the drain induced barrier lowering (DIBL) and subthreshold swing (S.S) have been also investigated. According to the 3-D numerical simulation, the proposed structure has a firm structure, an acceptable short channel effect (SCE), a reduced series resistance, an increased on state drain current (I on) and a large normalized I DS. Furthermore, the structure can also improve corner effect and reduce self-heating effect due to the extended body. Our results show that the EBFinFET is excellent for nanoscale device.

Keywords: SOI, FinFET, tri-gate, self-heating effect.

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Authors: Hung-Pei Hsu, Jyi-Tsong Lin, Po-Hsieh Lin, Cheng-Hsien Chang, Ming-Tsung Shih, Chan-Hsiang Chang, Shih-Chuan Tseng, Min-Yan Lin, Shih-Wen Hsu

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In this paper, we propose a novel metal oxide semiconductor field effect transistor with L-shaped channel structure (LMOS), and several type of L-shaped structures are also designed, studied and compared with the conventional MOSFET device for the same average gate length (Lavg). The proposed device electrical characteristics are analyzed and evaluated by three dimension (3-D) ISE-TCAD simulator. It can be confirmed that the LMOS devices have higher on-state drain current and both lower drain-induced barrier lowering (DIBL) and subthreshold swing (S.S.) than its conventional counterpart has. In addition, the transconductance and voltage gain properties of the LMOS are also improved.

Keywords: Average gate length (Lavg), drain-induced barrier lowering (DIBL), L-shaped channel MOSFET (LMOS), subthreshold swing (S.S.).

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Authors: M. Azadbakht, B. Azadbakht, R. Janzade Galogah, A. Kiapei, H. Jafari

Abstract:

In this research, performance of rotavator with horizontal rotary axis and vertical rotary axis has been evaluated and compared. The mean weight diameter (MWD), cross-sectional area disturbed and cone index of soil investigated. Factorial experiments based on a randomized complete block with 18 treatments, three different velocities 2.2, 3.5, 6.1 km/h; three different depth of 5, 10, 15cm and with two rotary plows horizontal axis and vertical axis with three replications were used. Result showed that maximum MWD in 6.1 km/h and 15cm of depth were 55.6 and 52.5mm for horizontal axis rotavator, respectively. The minimum MWD in 2.2 km/h and 5cm of depth for vertical axis rotavator were 34.9 and 35.1mm, respectively. The values of cone index 1861.1 and 2339.5 kPa for vertical axis rotavator and horizontal axis rotavator were obtained, respectively, also the values of cross-sectional area disturbed 687 and 497.2cm² for vertical axis rotavator and horizontal axis rotavator were obtained, respectively.

Keywords: Horizontal rotary axis, vertical rotary axis, rotavator, MWD, cone index, cross-sectional area.

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Authors: S. Matour, M. Mahdavinejad, R. Fayaz

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Daylight utilization is a key factor in achieving visual and thermal comfort, and energy savings in integrated building design. However, lack of measured data related to this topic has become a major challenge with the increasing need for integrating lighting concepts and simulations in the early stages of design procedures. The current paper deals with the values of daylight illuminance on horizontal and south facing vertical surfaces; the data are estimated using IESNA model and measured values of the horizontal and vertical illuminance, and a regression model with an acceptable linear correlation is obtained. The resultant illuminance frequency curves are useful for estimating daylight availability on south facing surfaces in Tehran. In addition, the relationship between indirect vertical illuminance and the corresponding global horizontal illuminance is analyzed. A simple parametric equation is proposed in order to predict the vertical illumination on a shaded south facing surface. The equation correlates the ratio between the vertical and horizontal illuminance to the solar altitude and is used with another relationship for prediction of the vertical illuminance. Both equations show good agreement, which allows for calculation of indirect vertical illuminance on a south facing surface at any time throughout the year.

Keywords: Tehran daylight availability, horizontal illuminance, vertical illuminance, diffuse illuminance.

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Authors: M. Pasbani Khiavi, M. A. Ghorbani

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This paper presents an analytical solution to get a reliable estimation of the hydrodynamic pressure on gravity dams induced by vertical component earthquake when solving the fluid and dam interaction problem. Presented analytical technique is presented for calculation of earthquake-induced hydrodynamic pressure in the reservoir of gravity dams allowing for water compressibility and wave absorption at the reservoir bottom. This new analytical solution can take into account the effect of bottom material on seismic response of gravity dams. It is concluded that because the vertical component of ground motion causes significant hydrodynamic forces in the horizontal direction on a vertical upstream face, responses to the vertical component of ground motion are of special importance in analysis of concrete gravity dams subjected to earthquakes.

Keywords: Dam, Reservoir, Analytical solution, Vertical component, Earthquake

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Authors: C. Papapicco

Abstract:

Motherhood is an existential human relationship that lasts for the whole life and is always interwoven with subjectivity and culture. As a result of the brain drain, the motherhood becomes motherhood at distance. Starting from the hypothesis that re-signification of the mother at distance practices is culturally relevant; the research aims to understand the experience of mother at a distance in order to extrapolate the strategies of management of the empty nest. Specifically, the research aims to evaluate the experience of a brain drain’s mother, who created a blog that intends to take care of other parents at a distance. Actually, the blog is the only artifact symbol of the Italian culture of motherhood at distance. In the research, a Netnographic Analysis of the blog mammedicervelliinfuga.com is offered with the aim of understanding if the online world becomes an opportunity to manage the role of mother at a distance. A narrative interview with the blog creator was conducted and then the texts were analyzed by means of a Diatextual Analysis approach. It emerged that the migration projects of talented children take on different meanings and representations for parents. Thus, it is shown that the blog becomes a new form of understanding and practicing motherhood at a distance.

Keywords: Brain drain, diatextual analysis, distance motherhood blog, online and offline narrations.

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Authors: Priyanka Malik A, Rishu Chaujar B, Mridula Gupta C, R.S. Gupta D

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In this paper, for the first time, a two-dimensional (2D) analytical drain current model for sub-100 nm multi-layered gate material engineered trapezoidal recessed channel (MLGMETRC) MOSFET: a novel design is presented and investigated using ATLAS and DEVEDIT device simulators, to mitigate the large gate leakages and increased standby power consumption that arise due to continued scaling of SiO2-based gate dielectrics. The twodimensional (2D) analytical model based on solution of Poisson-s equation in cylindrical coordinates, utilizing the cylindrical approximation, has been developed which evaluate the surface potential, electric field, drain current, switching metric: ION/IOFF ratio and transconductance for the proposed design. A good agreement between the model predictions and device simulation results is obtained, verifying the accuracy of the proposed analytical model.

Keywords: ATLAS, DEVEDIT, NJD, MLGME- TRCMOSFET.

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Authors: Three-Dimensional Modeling of a Twisted-Blade Darrieus Vertical-Axis Wind Turbine

Abstract:

A complete CAD procedure to model a twisted-bladed vertical-axis wind turbine (VAWT) is presented with the aim of determining some practical guidelines to be used for the generation of an easily-meshable CAD geometry to be adopted as the basis of both CFD and FEM numerical simulations.

Keywords: Vertical-axis wind turbine (VAWT), twisted blade, CAD, 3D modeling.

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Authors: Ashwani K. Rana, Narottam Chand, Vinod Kapoor

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In this paper, gate leakage current has been mitigated by the use of novel nanoscale MOSFET with Source/Drain-to-Gate Non-overlapped and high-k spacer structure for the first time. A compact analytical model has been developed to study the gate leakage behaviour of proposed MOSFET structure. The result obtained has found good agreement with the Sentaurus Simulation. Fringing gate electric field through the dielectric spacer induces inversion layer in the non-overlap region to act as extended S/D region. It is found that optimal Source/Drain-to-Gate Non-overlapped and high-k spacer structure has reduced the gate leakage current to great extent as compared to those of an overlapped structure. Further, the proposed structure had improved off current, subthreshold slope and DIBL characteristic. It is concluded that this structure solves the problem of high leakage current without introducing the extra series resistance.

Keywords: Gate tunneling current, analytical model, spacer dielectrics, DIBL, subthreshold slope.

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Authors: K. E. Kaharudin, A. H. Hamidon, F. Salehuddin

Abstract:

Vertical Double Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is believed to suppress various short channel effect problems. The gate to channel coupling in vertical DG-MOSFET are doubled, thus resulting in higher current density. By having two gates, both gates are able to control the channel from both sides and possess better electrostatic control over the channel. In order to ensure that the transistor possess a superb turn-off characteristic, the subs-threshold swing (SS) must be kept at minimum value (60-90mV/dec). By utilizing SILVACO TCAD software, an n-channel vertical DG-MOSFET was successfully designed while keeping the sub-threshold swing (SS) value as minimum as possible. From the observation made, the value of sub-threshold swing (SS) was able to be varied by adjusting the height of the silicon pillar. The minimum value of sub-threshold swing (SS) was found to be 64.7mV/dec with threshold voltage (V_TH) of 0.895V. The ideal height of the vertical DG-MOSFET pillar was found to be at 0.265 µm.

Keywords: DG-MOSFET, pillar, SCE, vertical

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Authors: Said M. Easa, Shinya Kikuchi

Abstract:

When the profile information of an existing road is missing or not up-to-date and the parameters of the vertical alignment are needed for engineering analysis, the engineer has to recreate the geometric design features of the road alignment using collected profile data. The profile data may be collected using traditional surveying methods, global positioning systems, or digital imagery. This paper develops a method that estimates the parameters of the geometric features that best characterize the existing vertical alignments in terms of tangents and the expressions of the curve, that may be symmetrical, asymmetrical, reverse, and complex vertical curves. The method is implemented using an Excel-based optimization method that minimizes the differences between the observed profile and the profiles estimated from the equations of the vertical curve. The method uses a 'wireframe' representation of the profile that makes the proposed method applicable to all types of vertical curves. A secondary contribution of this paper is to introduce the properties of the equal-arc asymmetrical curve that has been recently developed in the highway geometric design field.

Keywords: Optimization, parameters, data, reverse, spreadsheet, vertical curves

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Authors: Gu Wei, Gao Wei

Abstract:

In this report, an OTA which is used in fully differential pipelined ADC was described. Using gain-boost architecture with difference-ended amplifier, this OTA achieve high-gain and high-speed. Besides, the CMFB circuit is also used, and some methods are concerned to improve the performance. Then, by optimization the layout design, OTA-s mismatch was reduced. This design was using TSMC 0.18um CMOS process and simulation both schematic and layout in Cadence. The result of the simulation shows that the OTA has a gain up to 80dB,a unity gain bandwidth of about 1.437GHz for a 2pF load, a slew rate is about 428V/μs, a output swing is 0.2V~1.35V, with the power supply of 1.8V, the power consumption is 88mW. This amplifier was used in a 10bit 150MHz pipelined ADC.

Keywords: OTA, common drain, CMFB, pipelined ADC

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Authors: Kais Hafsaoui

Abstract:

In this paper, we propose to study the synthesis of the vertical dipole antenna over imperfect ground. The synthesis implementation-s method for this type of antenna permits to approach the appropriated radiance-s diagram. The used approach is based on neural network. Our main contribution in this paper is the extension of a synthesis model of this vertical dipole antenna over imperfect ground.

Keywords: Vertical dipole antenna, imperfect ground, neural network.

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Authors: Fatemeh Karimi, Morteza Fathipour, Hamdam Ghanatian, Vala Fathipour

Abstract:

In this paper we investigate the electrical characteristics of a new structure of gate all around strained silicon nanowire field effect transistors (FETs) with dual dielectrics by changing the radius (RSiGe) of silicon-germanium (SiGe) wire and gate dielectric. Indeed the effect of high-κ dielectric on Field Induced Barrier Lowering (FIBL) has been studied. Due to the higher electron mobility in tensile strained silicon, the n-type FETs with strained silicon channel have better drain current compare with the pure Si one. In this structure gate dielectric divided in two parts, we have used high-κ dielectric near the source and low-κ dielectric near the drain to reduce the short channel effects. By this structure short channel effects such as FIBL will be reduced indeed by increasing the RSiGe, ID-VD characteristics will be improved. The leakage current and transfer characteristics, the threshold-voltage (Vt), the drain induced barrier height lowering (DIBL), are estimated with respect to, gate bias (VG), RSiGe and different gate dielectrics. For short channel effects, such as DIBL, gate all around strained silicon nanowire FET have similar characteristics with the pure Si one while dual dielectrics can improve short channel effects in this structure.

Keywords: SNWT (silicon nanowire transistor), Tensile Strain, high-κ dielectric, Field Induced Barrier Lowering (FIBL), cylindricalnano wire (CW), drain induced barrier lowering (DIBL).

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Authors: M. Raciti Castelli, S. De Betta, E. Benini

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The optimal grid spacing and turbulence model for the 2D numerical analysis of a vertical-axis water turbine (VAWaterT) operating in a 2 m/s freestream current has been investigated. The results of five different spatial domain discretizations and two turbulence models (k-ω SST and k-ε RNG) have been compared, in order to gain the optimal y+ parameter distribution along the blade walls during a full rotor revolution. The resulting optimal mesh has appeared to be quite similar to that obtained for the numerical analysis of a vertical-axis wind turbine.

Keywords: CFD, vertical axis water turbine, NACA 0025, blade y+.

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Authors: M. Khaouani, A. Guen-Bouazza, B. Bouazza, Z. Kourdi

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The integrity and issues related to electrostatic performance associated with scaling Si MOSFET bulk sub 10nm channel length promotes research in new device architectures such as SOI, double gate and GAA MOSFET. In this paper, we present some novel characteristic of horizontal rectangular gate\gate all around MOSFETs with dual metal of gate we obtained using SILVACO TCAD tools. We will also exhibit some simulation results we obtained relating to the influence of some parameters variation on our structure, that having a direct impact on their threshold voltage and drain current. In addition, our TFET showed reasonable I_ON/I_OFF ratio of (10⁴) and low drain induced barrier lowering (DIBL) of 39 mV/V.

Keywords: GAA, SILVACO, QUANTUM, MOSFETs.

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