Search results for: Complementary common gate

Authors: Jae-Chang Kwak, Yong-Seo Koo

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The high efficiency power management IC (PMIC) with switching device is presented in this paper. PMIC is controlled with PFM control method in order to have high power efficiency at high current level. Dynamic Threshold voltage CMOS (DT-CMOS) with low on-resistance is designed to decrease conduction loss. The threshold voltage of DT-CMOS drops as the gate voltage increase, resulting in a much higher current handling capability than standard MOSFET. PFM control circuits consist of a generator, AND gate and comparator. The generator is made to have 1.2MHz oscillation voltage. The DC-DC converter based on PFM control circuit and low on-resistance switching device is presented in this paper.

Keywords: DT-CMOS, PMIC, PFM, DC-DC converter.

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Authors: G. Renuka Devi

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This paper analyzes the experimental investigation of indirect field oriented control of Field Programmable Gate Array (FPGA) based five-phase induction motor drive. A detailed d-q modeling and Space Vector Pulse Width Modulation (SVPWM) technique of 5-phase drive is elaborated in this paper. In the proposed work, the prototype model of 1 hp 5-phase Voltage Source Inverter (VSI) fed drive is implemented in hardware. SVPWM pulses are generated in FPGA platform through Very High Speed Integrated Circuit Hardware Description Language (VHDL) coding. The experimental results are observed under different loading conditions and compared with simulation results to validate the simulation model.

Keywords: Five-phase induction motor drive, field programmable gate array, indirect field oriented control, multi-phase, space vector pulse width modulation, voltage source inverter, very high speed integrated circuit hardware description language.

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Authors: Shipra Upadhyay , R. K. Nagaria, R. A. Mishra

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In this paper, we present the design and experimental evaluation of complementary energy path adiabatic logic (CEPAL) based 1 bit full adder circuit. A simulative investigation on the proposed full adder has been done using VIRTUOSO SPECTRE simulator of cadence in 0.18μm UMC technology and its performance has been compared with the conventional CMOS full adder circuit. The CEPAL based full adder circuit exhibits the energy saving of 70% to the conventional CMOS full adder circuit, at 100 MHz frequency and 1.8V operating voltage.

Keywords: Adiabatic, CEPAL, full adder, power clock

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Authors: Seung-Mok Han, Woo-Jin Nam, Seongsoo Lee

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This paper proposes and implements an core transform architecture, which is one of the major processes in HEVC video compression standard. The proposed core transform architecture is implemented with only adders and shifters instead of area-consuming multipliers. Shifters in the proposed core transform architecture are implemented in wires and multiplexers, which significantly reduces chip area. Also, it can process from 4×4 to 16×16 blocks with common hardware by reusing processing elements. Designed core transform architecture in 0.13um technology can process a 16×16 block with 2-D transform in 130 cycles, and its gate count is 101,015 gates.

Keywords: HEVC, Core transform, Low area, Shift-and-add, PE reuse

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Authors: Shobha Sharma, Amita Dev

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This research paper presents highly optimized barrel shifter at 22nm Hi K metal gate strained Si technology node. This barrel shifter is having a unique combination of static and dynamic body bias which gives lowest power delay product. This power delay product is compared with the same circuit at same technology node with static forward biasing at ‘supply/2’ and also with normal reverse substrate biasing and still found to be the lowest. The power delay product of this barrel sifter is .39362X10-17J and is lowered by approximately 78% to reference proposed barrel shifter at 32nm bulk CMOS technology. Power delay product of barrel shifter at 22nm Hi K Metal gate technology with normal reverse substrate bias is 2.97186933X10-17J and can be compared with this design’s PDP of .39362X10-17J. This design uses both static and dynamic substrate biasing and also has approximately 96% lower power delay product compared to only forward body biased at half of supply voltage. The NMOS model used are predictive technology models of Arizona state university and the simulations to be carried out using HSPICE simulator.

Keywords: Dynamic body biasing, highly optimized barrel shifter, PDP, Static body biasing.

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Authors: Farid Moshgelani, Dhamin Al-Khalili, Côme Rozon

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In this paper, FinFET devices are analyzed with emphasis on sub-threshold leakage current control. This is achieved through proper biasing of the back gate, and through the use of asymmetric work functions for the four terminal FinFET devices. We are also examining different configurations of multiplexers and XOR gates using transistors of symmetric and asymmetric work functions. Based on extensive characterization data for MUX circuits, our proposed configuration using symmetric devices lead to leakage current and delay improvements of 65% and 47% respectively compared to results in the literature. For XOR gates, a 90% improvement in the average leakage current is achieved by using asymmetric devices. All simulations are based on a 25nm FinFET technology using the University of Florida UFDG model.

Keywords: FinFET, logic functions, asymmetric workfunction devices, back gate biasing, sub-threshold leakage current.

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Authors: M. M. Karkhanehchi, A. Ammani

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A simple analytical model has been developed to optimize biasing conditions for obtaining maximum linearity among lattice-matched, pseudomorphic and metamorphic HEMT types as well as enhancement and depletion HEMT modes. A nonlinear current-voltage model has been simulated based on extracted data to study and select the most appropriate type and mode of HEMT in terms of a given gate-source biasing voltage within the device so as to employ the circuit for the highest possible output current or voltage linear swing. Simulation results can be used as a basis for the selection of optimum gate-source biasing voltage for a given type and mode of HEMT with regard to a circuit design. The consequences can also be a criterion for choosing the optimum type or mode of HEMT for a predetermined biasing condition.

Keywords: Biasing, characteristic, linearity, simulation.

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Authors: Spyridon Nikolaidis

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A modeling approach for CMOS gates is presented based on the use of the equivalent inverter. A new model for the inverter has been developed using a simplified transistor current model which incorporates the nanoscale effects for the planar technology. Parametric expressions for the output voltage are provided as well as the values of the output and supply current to be compatible with the CCS technology. The model is parametric according the input signal slew, output load, transistor widths, supply voltage, temperature and process. The transistor widths of the equivalent inverter are determined by HSPICE simulations and parametric expressions are developed for that using a fitting procedure. Results for the NAND gate shows that the proposed approach offers sufficient accuracy with an average error in propagation delay about 5%.

Keywords: CMOS gate modeling, Inverter modeling, transistor current model, timing model.

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Authors: Hai-Qing Xie, Yun Zeng, Yong-Hong Yan, Jian-Ping Zeng, Tai-Hong Wang

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Photo-BJMOSFET (Bipolar Junction Metal-Oxide- Semiconductor Field Effect Transistor) fabricated on SOI film was proposed. ITO film is adopted in the device as gate electrode to reduce light absorption. Depletion region but not inversion region is formed in film by applying gate voltage (but low reverse voltage) to achieve high photo-to-dark-current ratio. Comparisons of photoelectriccharacteristics executed among VGK=0V, 0.3V, 0.6V, 0.9V and 1.0V (reverse voltage VAK is equal to 1.0V for total area of 10×10μm2). The results indicate that the greatest improvement in photo-to-dark-current ratio is achieved up to 2.38 at VGK=0.6V. In addition, photo-BJMOSFET is compatible with CMOS integration due to big input resistance

Keywords: Photo-BJMOSFET, Responsivity, Sensitivity, Spectral response.

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Authors: N. Massoum, A. Guen. Bouazza, B. Bouazza, A. El Ouchdi

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The progress of industry integrated circuits in recent years has been pushed by continuous miniaturization of transistors. With the reduction of dimensions of components at 0.1 micron and below, new physical effects come into play as the standard simulators of two dimensions (2D) do not consider. In fact the third dimension comes into play because the transverse and longitudinal dimensions of the components are of the same order of magnitude. To describe the operation of such components with greater fidelity, we must refine simulation tools and adapted to take into account these phenomena. After an analytical study of the static characteristics of the component, according to the different operating modes, a numerical simulation is performed of field-effect transistor with submicron gate MESFET GaInP. The influence of the dimensions of the gate length is studied. The results are used to determine the optimal geometric and physical parameters of the component for their specific applications and uses.

Keywords: Monte Carlo simulation, transient electron transport, MESFET device.

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Authors: Cheng-Hsien Chang, Jyi-Tsong Lin, Po-Hsieh Lin, Hung-Pei Hsu, Chan-Hsiang Chang, Ming-Tsung Shih, Shih-Chuan Tseng, Min-Yan Lin

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In this paper, we have proposed a novel FinFET with extended body under the poly gate, which is called EB-FinFET, and its characteristic is demonstrated by using three-dimensional (3-D) numerical simulation. We have analyzed and compared it with conventional FinFET. The extended body height dependence on the drain induced barrier lowering (DIBL) and subthreshold swing (S.S) have been also investigated. According to the 3-D numerical simulation, the proposed structure has a firm structure, an acceptable short channel effect (SCE), a reduced series resistance, an increased on state drain current (I on) and a large normalized I DS. Furthermore, the structure can also improve corner effect and reduce self-heating effect due to the extended body. Our results show that the EBFinFET is excellent for nanoscale device.

Keywords: SOI, FinFET, tri-gate, self-heating effect.

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Authors: K. E. Kaharudin, A. H. Hamidon, F. Salehuddin

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Vertical Double Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is believed to suppress various short channel effect problems. The gate to channel coupling in vertical DG-MOSFET are doubled, thus resulting in higher current density. By having two gates, both gates are able to control the channel from both sides and possess better electrostatic control over the channel. In order to ensure that the transistor possess a superb turn-off characteristic, the subs-threshold swing (SS) must be kept at minimum value (60-90mV/dec). By utilizing SILVACO TCAD software, an n-channel vertical DG-MOSFET was successfully designed while keeping the sub-threshold swing (SS) value as minimum as possible. From the observation made, the value of sub-threshold swing (SS) was able to be varied by adjusting the height of the silicon pillar. The minimum value of sub-threshold swing (SS) was found to be 64.7mV/dec with threshold voltage (V_TH) of 0.895V. The ideal height of the vertical DG-MOSFET pillar was found to be at 0.265 µm.

Keywords: DG-MOSFET, pillar, SCE, vertical

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Authors: Hung-Pei Hsu, Jyi-Tsong Lin, Po-Hsieh Lin, Cheng-Hsien Chang, Ming-Tsung Shih, Chan-Hsiang Chang, Shih-Chuan Tseng, Min-Yan Lin, Shih-Wen Hsu

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In this paper, we propose a novel metal oxide semiconductor field effect transistor with L-shaped channel structure (LMOS), and several type of L-shaped structures are also designed, studied and compared with the conventional MOSFET device for the same average gate length (Lavg). The proposed device electrical characteristics are analyzed and evaluated by three dimension (3-D) ISE-TCAD simulator. It can be confirmed that the LMOS devices have higher on-state drain current and both lower drain-induced barrier lowering (DIBL) and subthreshold swing (S.S.) than its conventional counterpart has. In addition, the transconductance and voltage gain properties of the LMOS are also improved.

Keywords: Average gate length (Lavg), drain-induced barrier lowering (DIBL), L-shaped channel MOSFET (LMOS), subthreshold swing (S.S.).

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Authors: Wei Zhang

Abstract:

With the rapid development of deep learning, neural network and deep learning algorithms play a significant role in various practical applications. Due to the high accuracy and good performance, Convolutional Neural Networks (CNNs) especially have become a research hot spot in the past few years. However, the size of the networks becomes increasingly large scale due to the demands of the practical applications, which poses a significant challenge to construct a high-performance implementation of deep learning neural networks. Meanwhile, many of these application scenarios also have strict requirements on the performance and low-power consumption of hardware devices. Therefore, it is particularly critical to choose a moderate computing platform for hardware acceleration of CNNs. This article aimed to survey the recent advance in Field Programmable Gate Array (FPGA)-based acceleration of CNNs. Various designs and implementations of the accelerator based on FPGA under different devices and network models are overviewed, and the versions of Graphic Processing Units (GPUs), Application Specific Integrated Circuits (ASICs) and Digital Signal Processors (DSPs) are compared to present our own critical analysis and comments. Finally, we give a discussion on different perspectives of these acceleration and optimization methods on FPGA platforms to further explore the opportunities and challenges for future research. More helpfully, we give a prospect for future development of the FPGA-based accelerator.

Keywords: Deep learning, field programmable gate array, FPGA, hardware acceleration, convolutional neural networks, CNN.

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Authors: Sachin Kamble, Shradha Gawankar

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This paper presents the findings of successful implementation of Business Process Reengineering (BPR) of cement dispatch activities in a cement manufacturing plant located in India. Simulation model was developed for the purpose of identifying and analyzing the areas for improvement. The company was facing a problem of low throughput rate and subsequent forced stoppages of the plant leading to a high production loss of 15000MT per month. It was found from the study that the present systems and procedures related to the in-plant logistics plant required significant changes. The major recommendations included process improvement at the entry gate, reducing the cycle time at the security gate and installation of an additional weigh bridge. This paper demonstrates how BPR can be implemented for improving the in-plant logistics process. Various recommendations helped the plant to increase its throughput by 14%.

Keywords: Business process reengineering, simulation modeling, in-plant logistics, distribution process, cement industry.

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Authors: Imran C.T., Syibrah M.N., Mohd Lazim A.

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Fuzzy sets theory affirmed that the linguistic value for every contraries relation is complementary. It was stressed in the intuitionistic fuzzy sets (IFS) that the conditions for contraries relations, which are the fuzzy values, cannot be greater than one. However, complementary in two contradict phenomena are not always true. This paper proposes a new idea condition for conflicting bifuzzy sets by relaxing the condition of intuitionistic fuzzy sets. Here, we will critically forward examples using triangular fuzzy number in formulating a new condition for conflicting bifuzzy sets (CBFS). Evaluation of positive and negative in conflicting phenomena were calculated concurrently by relaxing the condition in IFS. The hypothetical illustration showed the applicability of the new condition in CBFS for solving non-complement contraries intuitionistic evaluation. This approach can be applied to any decision making where conflicting is very much exist.

Keywords: Conflicting bifuzzy set, conflicting degree, fuzzy sets, fuzzy numbers.

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Authors: C. Kalamani, V. Abishek Karthick, S. Anitha, K. Kavin Kumar

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The fault tolerant system plays a crucial role in the critical applications which are being used in the present scenario. A fault may change the functionality of circuits. Aim of this paper is to design multiplier using fault tolerant hybrid full adder. Fault tolerant hybrid full adder is designed to check and repair any fault in the circuit using self-checking circuit and the self-repairing circuit. Further, the use of conventional logic circuits may result in more area, delay as well as power consumption. In order to reduce these parameters of the circuit, GDI (Gate Diffusion Input) techniques with less number of transistors are used compared to conventional full adder circuit. This reduces the area, delay and power consumption. The proposed method solves the major problems occurring in the most crucial and critical applications.

Keywords: Gate diffusion input, hybrid full adder, self-checking, fault tolerant.

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Authors: Ala'eddin A. Saif , Z. A. Z. Jamal, Z. Sauli, P. Poopalan

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The ferroelectric behavior of barium strontium titanate (BST) in thin film form has been investigated in order to study the possibility of using BST for ferroelectric gate-field effect transistor (FeFET) for memory devices application. BST thin films have been fabricated as Al/BST/Pt/SiO2/Si-gate configuration. The variation of the dielectric constant (ε) and tan δ with frequency have been studied to ensure the dielectric quality of the material. The results show that at low frequencies, ε increases as the Ba content increases, whereas at high frequencies, it shows the opposite variation, which is attributed to the dipole dynamics. tan δ shows low values with a peak at the mid-frequency range. The ferroelectric behavior of the Al/BST/Pt/SiO2/Si has been investigated using C-V characteristics. The results show that the strength of the ferroelectric hysteresis loop increases as the Ba content increases; this is attributed to the grain size and dipole dynamics effect.

Keywords: BST thin film, Electrical properties, Ferroelectrichysteresis, Ferroelectric FET.

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Authors: David M. Lucas, Charles W. Jarrett

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In the culture of Thailand, the Yak serve as a mediated icon representing strength, power, and mystical protection not only for the Buddha, but for population of worshipers. Originating from the forests of China, the Yak continues to stand guard at the gates of Buddhist temples. The Yak represents Thai culture in the hearts of Thai people. This paper presents a qualitative study regarding the curious mix of media, culture, and religion that projects the Yak of Thailand as a larger than life message throughout the political, cultural, and religious spheres. The gate guardians, or gods as they are sometimes called, appear throughout the religious temples of Asian cultures. However, the Asian cultures demonstrate differences in artistic renditions (or presentations) of such sentinels. Thailand gate guards (the Yak) stand in front of many Buddhist temples, and these iconic figures display unique features with varied symbolic significance. The temple (or wat), plays a vital role in every community; and, for many people, Thailand’s temples are the country’s most endearing sights. The authors applied folknography as a methodology to illustrate the importance of the Thai Yak in serving as meaningful icons that transcend not only time, but the culture, religion, and mass media. The Yak represents mythical, religious, artistic, cultural, and militaristic significance for the Thai people. Data collection included interviews, focus groups, and natural observations. This paper summarizes the perceptions of the Thai people concerning their gate sentries and the relationship, communication, connection, and the enduring respect that Thai people hold for their guardians of the gates.

Keywords: Communication, Culture, Folknography, Icon, Image, Media, Protection, Religion, Yak.

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Authors: Padmanabhan Balasubramanian, Ryuta Arisaka

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Factoring Boolean functions is one of the basic operations in algorithmic logic synthesis. A novel algebraic factorization heuristic for single-output combinatorial logic functions is presented in this paper and is developed based on the set theory paradigm. The impact of factoring is analyzed mainly from a low power design perspective for standard cell based digital designs in this paper. The physical implementation of a number of MCNC/IWLS combinational benchmark functions and sub-functions are compared before and after factoring, based on a simple technology mapping procedure utilizing only standard gate primitives (readily available as standard cells in a technology library) and not cells corresponding to optimized complex logic. The power results were obtained at the gate-level by means of an industry-standard power analysis tool from Synopsys, targeting a 130nm (0.13μm) UMC CMOS library, for the typical case. The wire-loads were inserted automatically and the simulations were performed with maximum input activity. The gate-level simulations demonstrate the advantage of the proposed factoring technique in comparison with other existing methods from a low power perspective, for arbitrary examples. Though the benchmarks experimentation reports mixed results, the mean savings in total power and dynamic power for the factored solution over a non-factored solution were 6.11% and 5.85% respectively. In terms of leakage power, the average savings for the factored forms was significant to the tune of 23.48%. The factored solution is expected to better its non-factored counterpart in terms of the power-delay product as it is well-known that factoring, in general, yields a delay-efficient multi-level solution.

Keywords: Factorization, Set theory, Logic function, Standardcell based design, Low power.

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Authors: Piyush Samant, Ravinder Agarwal

Abstract:

Complementary and Alternative Medicine (CAM) techniques are quite popular and effective for chronic diseases. Iridology is more than 150 years old CAM technique which analyzes the patterns, tissue weakness, color, shape, structure, etc. for disease diagnosis. The objective of this paper is to validate the use of iridology for the diagnosis of the diabetes. The suggested model was applied in a systemic disease with ocular effects. 200 subject data of 100 each diabetic and non-diabetic were evaluated. Complete procedure was kept very simple and free from the involvement of any iridologist. From the normalized iris, the region of interest was cropped. All 63 features were extracted using statistical, texture analysis, and two-dimensional discrete wavelet transformation. A comparison of accuracies of six different classifiers has been presented. The result shows 89.66% accuracy by the random forest classifier.

Keywords: Complementary and alternative medicine, Iridology, iris, feature extraction, classification, disease prediction.

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Authors: Muhammad H. Rais,

Abstract:

Truncated multiplier is a good candidate for digital signal processing (DSP) applications including finite impulse response (FIR) and discrete cosine transform (DCT). Through truncated multiplier a significant reduction in Field Programmable Gate Array (FPGA) resources can be achieved. This paper presents for the first time a comparison of resource utilization of Spartan-3AN and Virtex-5 implementation of standard and truncated multipliers using Very High Speed Integrated Circuit Hardware Description Language (VHDL). The Virtex-5 FPGA shows significant improvement as compared to Spartan-3AN FPGA device. The Virtex-5 FPGA device shows better performance with a percentage ratio of number of occupied slices for standard to truncated multipliers is increased from 40% to 73.86% as compared to Spartan- 3AN is decreased from 68.75% to 58.78%. Results show that the anomaly in Spartan-3AN FPGA device average connection and maximum pin delay have been efficiently reduced in Virtex-5 FPGA device.

Keywords: Digital Signal Processing (DSP), FieldProgrammable Gate Array (FPGA), Spartan-3AN, TruncatedMultiplier, Virtex-5, VHDL.

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Authors: M. R. Naghavi, M. Maleki, S. F. Tabatabaei

Abstract:

In order to study floristic and molecular classification of common wild wheat (Triticum boeoticum Boiss.), an analysis was conducted on populations of the Triticum boeoticum collected from different regions of Iran. Considering all floristic compositions of habitats, six floristic groups (syntaxa) within the populations were identified. A high level of variation of T. boeoticum also detected using SSR markers. Our results showed that molecular method confirmed the grouping of floristic method. In other word, the results from our study indicate that floristic classification are still useful, efficient, and economic tools for characterizing the amount and distribution of genetic variation in natural populations of T. boeoticum. Nevertheless, molecular markers appear as useful and complementary techniques for identification and for evaluation of genetic diversity in studied populations.

Keywords: T. boeoticum, diversity, floristic, SSRs.

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Authors: Rajesh Mehra, Bharti Thakur

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In this paper, an Infinite Impulse Response (IIR) filter has been designed and simulated on an Field Programmable Gate Arrays (FPGA). The implementation is based on Multiply Add and Accumulate (MAC) algorithm which uses multiply operations for design implementation. Parallel Pipelined structure is used to implement the proposed IIR Filter taking optimal advantage of the look up table of target device. The designed filter has been synthesized on Digital Signal Processor (DSP) slice based FPGA to perform multiplier function of MAC unit. The DSP slices are useful to enhance the speed performance. The proposed design is simulated with Matlab, synthesized with Xilinx Synthesis Tool, and implemented on FPGA devices. The Virtex 5 FPGA based design can operate at an estimated frequency of 81.5 MHz as compared to 40.5 MHz in case of Spartan 3 ADSP based design. The Virtex 5 based implementation also consumes less slices and slice flip flops of target FPGA in comparison to Spartan 3 ADSP based implementation to provide cost effective solution for signal processing applications.

Keywords: Butterworth, DSP, IIR, MAC, FPGA.

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Authors: Hao Cheng, Zhiwu Wang, Guozheng Yan, Pingping Jiang, Shijia Qin, Shuai Kuang

Abstract:

Autofluorescence Imaging (AFI) is a technology for detecting early carcinogenesis of the gastrointestinal tract in recent years. Compared with traditional white light endoscopy (WLE), this technology greatly improves the detection accuracy of early carcinogenesis, because the colors of normal tissues are different from cancerous tissues. Thus, edge detection can distinguish them in grayscale images. In this paper, based on the traditional Sobel edge detection method, optimization has been performed on this method which considers the environment of the gastrointestinal, including adaptive threshold and morphological processing. All of the processes are implemented on our self-designed system based on the image sensor OV6930 and Field Programmable Gate Array (FPGA), The system can capture the gastrointestinal image taken by the lens in real time and detect edges. The final experiments verified the feasibility of our system and the effectiveness and accuracy of the edge detection algorithm.

Keywords: AFI, edge detection, adaptive threshold, morphological processing, OV6930, FPGA.

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Authors: H. A. Lopez-Aguilar, E. A. Huerta-Reynoso, J. A. Gomez, J. A. Duarte-Moller, A. Perez-Hernandez

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Environmental performance of artisanal brick manufacture was studied by Lifecycle Assessment (LCA) methodology and Computational Fluid Dynamics (CFD) analysis in Mexico. The main objective of this paper is to evaluate the environmental impact during artisanal brick manufacture. LCA cradle-to-gate approach was complemented with CFD analysis to carry out an Environmental Impact Assessment (EIA). The lifecycle includes the stages of extraction, baking and transportation to the gate. The functional unit of this study was the production of a single brick in Chihuahua, Mexico and the impact categories studied were carcinogens, respiratory organics and inorganics, climate change radiation, ozone layer depletion, ecotoxicity, acidification/ eutrophication, land use, mineral use and fossil fuels. Laboratory techniques for fuel characterization, gas measurements in situ, and AP42 emission factors were employed in order to calculate gas emissions for inventory data. The results revealed that the categories with greater impacts are ecotoxicity and carcinogens. The CFD analysis is helpful in predicting the thermal diffusion and contaminants from a defined source. LCA-CFD synergy complemented the EIA and allowed us to identify the problem of thermal efficiency within the system.

Keywords: LCA, CFD, brick, artisanal.

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Authors: Ebrahim Safarian, Kadir Bilen, Akif Ceviz

Abstract:

The turbocharger and turbocharging have been the inherent component of diesel engines, so that critical parameters of such engines, as BSFC (Brake Specific Fuel Consumption) or thermal efficiency, fuel consumption, BMEP (Brake Mean Effective Pressure), the power density output and emission level have been improved extensively. In general, the turbocharger can be considered as the most complex component of diesel engines, because it has closely interrelated turbomachinery concepts of the turbines and the compressors to thermodynamic fundamentals of internal combustion engines and stress analysis of all components. In this paper, a waste gate for a conventional single stage radial turbine is investigated by consideration of turbochargers operation constrains and engine operation conditions, without any detail designs in the turbine and the compressor. Amount of opening waste gate which extended between the ranges of full opened and closed valve, is demonstrated by limiting compressor boost pressure ratio. Obtaining of an optimum point by regard above mentioned items is surveyed by three linked meanline modeling programs together which consist of Turbomatch®, Compal®, Rital® madules in concepts NREC® respectively.

Keywords: Turbocharger, Wastegate, diesel engine, CONCEPT NREC programs.

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Authors: Hafiz ul Azad, Dragan V.Lazic, Waqar Shahid

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This paper presents implementation of attitude controller for a small UAV using field programmable gate array (FPGA). Due to the small size constrain a miniature more compact and computationally extensive; autopilot platform is needed for such systems. More over UAV autopilot has to deal with extremely adverse situations in the shortest possible time, while accomplishing its mission. FPGAs in the recent past have rendered themselves as fast, parallel, real time, processing devices in a compact size. This work utilizes this fact and implements different attitude controllers for a small UAV in FPGA, using its parallel processing capabilities. Attitude controller is designed in MATLAB/Simulink environment. The discrete version of this controller is implemented using pipelining followed by retiming, to reduce the critical path and thereby clock period of the controller datapath. Pipelined, retimed, parallel PID controller implementation is done using rapidprototyping and testing efficient development tool of “system generator", which has been developed by Xilinx for FPGA implementation. The improved timing performance enables the controller to react abruptly to any changes made to the attitudes of UAV.

Keywords: Field Programmable gate array (FPGA), Hardwaredescriptive Language (HDL), PID, Pipelining, Retiming, XilinxSystem Generator.

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Authors: Subal Kar, Madhuja Ghosh, Amitesh Kumar, Arijit Majumder

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Complementary split-ring resonator (CSRR) loaded microstrip square patch antenna has been optimally designed with the help of high frequency structure simulator (HFSS). The antenna has been fabricated on the basis of the simulation design data and experimentally tested in anechoic chamber to evaluate its gain, bandwidth, efficiency and polarization characteristics. The CSRR loaded microstrip patch antenna has been found to realize significant size miniaturization (to the extent of 24%) compared to the conventional-type microstrip patch antenna both operating at the same frequency (5.2 GHz). The fabricated antenna could realize a maximum gain of 4.17 dB, 10 dB impedance bandwidth of 34 MHz, efficiency 50.73% and with maximum cross-pol of 10.56 dB down at the operating frequency. This practically designed antenna with its miniaturized size is expected to be useful for airborne and space borne applications at microwave frequency.

Keywords: Split ring resonator, metamaterial, CSRR loaded patch antenna, microstrip patch antenna, LC resonator.

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Authors: Q. Zafar, R. Akram, Kh.S. Karimov, T.A. Khan, M. Farooq, M.M. Tahir

Abstract:

In this study we present the effect of elevated temperatures from 300K to 400K on the electrical properties of copper Phthalocyanine (CuPc) based organic field effect transistors (OFET). Thin films of organic semiconductor CuPc (40nm) and semitransparent Al (20nm) were deposited in sequence, by vacuum evaporation on a glass substrate with previously deposited Ag source and drain electrodes with a gap of 40 μm. Under resistive mode of operation, where gate was suspended it was observed that drain current of this organic field effect transistor (OFET) show an increase with temperature. While in grounded gate condition metal (aluminum) – semiconductor (Copper Phthalocyanine) Schottky junction dominated the output characteristics and device showed switching effect from low to high conduction states like Zener diode at higher bias voltages. This threshold voltage for switching effect has been found to be inversely proportional to temperature and shows an abrupt decrease after knee temperature of 360K. Change in dynamic resistance (Rd = dV/dI) with respect to temperature was observed to be -1%/K.

Keywords: Copper Phthalocyanine, Metal-Semiconductor Schottky Junction, Organic Field Effect Transistor, Switching effect, Temperature Sensor

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