Search results for: Semiconductor Optical Amplifier (SOA).

Authors: Andres Piña, Amy Meléndez, Pablo Cano, Tomas Cahuich

Abstract:

The purpose of this project is to propose a quick and environmentally friendly alternative to measure the quality of oils used in food industry. There is evidence that repeated and indiscriminate use of oils in food processing cause physicochemical changes with formation of potentially toxic compounds that can affect the health of consumers and cause organoleptic changes. In order to assess the quality of oils, non-destructive optical techniques such as Interferometry offer a rapid alternative to the use of reagents, using only the interaction of light on the oil. Through this project, we used interferograms of samples of oil placed under different heating conditions to establish the changes in their quality. These interferograms were obtained by means of a Mach-Zehnder Interferometer using a beam of light from a HeNe laser of 10mW at 632.8nm. Each interferogram was captured, analyzed and measured full width at half-maximum (FWHM) using the software from Amcap and ImageJ. The total of FWHMs was organized in three groups. It was observed that the average obtained from each of the FWHMs of group A shows a behavior that is almost linear, therefore it is probable that the exposure time is not relevant when the oil is kept under constant temperature. Group B exhibits a slight exponential model when temperature raises between 373 K and 393 K. Results of the t-Student show a probability of 95% (0.05) of the existence of variation in the molecular composition of both samples. Furthermore, we found a correlation between the Iodine Indexes (Physicochemical Analysis) and the Interferograms (Optical Analysis) of group C. Based on these results, this project highlights the importance of the quality of the oils used in food industry and shows how Interferometry can be a useful tool for this purpose.

Keywords: Food industry, interferometric, oils, quality control.

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Authors: Soo-Yeon Lee, Seung-Min Song, Moon-Kyu Song, Woo-Geun Lee, Kap-Soo Yoon, Jang-Yeon Kwon, Min-Koo Han

Abstract:

We fabricated the inverted-staggered etch stopper structure oxide-based TFT and investigated the characteristics of oxide TFT under the 400 nm wavelength light illumination. When 400 nm light was illuminated, the threshold voltage (Vth) decreased and subthreshold slope (SS) increased at forward sweep, while Vth and SS were not altered when larger wavelength lights, such as 650 nm, 550 nm and 450 nm, were illuminated. At reverse sweep, the transfer curve barely changed even under 400 nm light. Our experimental results support that photo-induced hole carriers are captured by donor-like interface trap and it caused the decrease of Vth and increase of SS. We investigated the interface trap density increases proportionally to the photo-induced hole concentration at active layer.

Keywords: thin film transistor, oxide-based semiconductor, lightresponse

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Authors: Muhammad Tahir, Muhammad H. Sayyad, Dil N. Khan, Fazal Wahab

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Herein, the organic semiconductor methyl orange (MO), is investigated for the first time for its electronic applications. For this purpose, Al/MO/n-Si heterojunction is fabricated through economical cheap and simple “drop casting” technique. The currentvoltage (I-V) measurements of the device are made at room temperature under dark conditions. The I-V characteristics of Al/MO/n-Si junction exhibits asymmetrical and rectifying behavior that confirms the formation of diode. The diode parameters such as rectification ratio (RR), turn on voltage (Vturn on), reverse saturation current (I0), ideality factor (n), barrier height ( b f ), series resistance (Rs) and shunt resistance (Rsh) are determined from I-V curves using Schottky equations. These values of these parameters are also extracted and verified by applying Cheung’s functions. The conduction mechanisms are explained from the forward bias I-V characteristics using the power law.

Keywords: Electrical properties, Organic/inorganic heterojunction diode, Methyl Orange, Cheungs Functions

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Authors: Liu Dan, Wang Xue, Wang Guiqin, Qian Zhihong

Abstract:

The burst noise is a kind of noises that are destructive and frequently found in semiconductor devices and ICs, yet detecting and removing the noise has proved challenging for IC designers or users. According to the properties of burst noise, a methodological approach is presented (proposed) in the paper, by which the burst noise can be analysed and detected in time domain. In this paper, principles and properties of burst noise are expounded first, Afterwards, feasibility (viable) of burst noise detection by means of wavelet transform in the time domain is corroborated in the paper, and the multi-resolution characters of Gaussian noise, burst noise and blurred burst noise are discussed in details by computer emulation. Furthermore, the practical method to decide parameters of wavelet transform is acquired through a great deal of experiment and data statistics. The methodology may yield an expectation in a wide variety of applications.

Keywords: Burst noise, detection, wavelet transform

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Authors: Jawad Ahmad, Hee-Jun Kim

Abstract:

This paper describes the design of a voltage based maximum power point tracker (MPPT) for photovoltaic (PV) applications. Of the various MPPT methods, the voltage based method is considered to be the simplest and cost effective. The major disadvantage of this method is that the PV array is disconnected from the load for the sampling of its open circuit voltage, which inevitably results in power loss. Another disadvantage, in case of rapid irradiance variation, is that if the duration between two successive samplings, called the sampling period, is too long there is a considerable loss. This is because the output voltage of the PV array follows the unchanged reference during one sampling period. Once a maximum power point (MPP) is tracked and a change in irradiation occurs between two successive samplings, then the new MPP is not tracked until the next sampling of the PV array voltage. This paper proposes an MPPT circuit in which the sampling interval of the PV array voltage, and the sampling period have been shortened. The sample and hold circuit has also been simplified. The proposed circuit does not utilize a microcontroller or a digital signal processor and is thus suitable for low cost and low power applications.

Keywords: Maximum power point tracker, Sample and hold amplifier, Sampling interval, Sampling period.

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Authors: Rohana Musa, Yuzman Yusoff, Chia Chieu Yin, Hanif Che Lah

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This paper presents the design and characterization of a low power Complementary Metal Oxide Semiconductor (CMOS) process sensor. The design is targeted for implementation using Silterra’s 180 nm CMOS process technology. The proposed process sensor employs a voltage threshold (V_th) extractor architecture for detection of variations in the fabrication process. The process sensor generates output voltages in the range of 401 mV (fast-fast corner) to 443 mV (slow-slow corner) at nominal condition. The power dissipation for this process sensor is 6.3 µW with a supply voltage of 1.8V with a silicon area of 190 µm X 60 µm. The preliminary result of this process sensor that was fabricated indicates a close resemblance between test and simulated results.

Keywords: CMOS Process sensor, Process, Voltage and Temperature (PVT) sensor, threshold extractor circuit, Vth extractor circuit.

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Authors: Nawang Chhunid, Gagnesh Kumar

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On-chip memories consume a significant portion of the overall die space and power in modern microprocessors. On-chip caches depend on Static Random-Access Memory (SRAM) cells and scaling of technology occurring as per Moore’s law. Unfortunately, the scaling is affecting stability, performance, and leakage power which will become major problems for future SRAMs in aggressive nanoscale technologies due to increasing device mismatch and variations. 3T1D Dynamic Random-Access Memory (DRAM) cell is a non-destructive read DRAM cell with three transistors and a gated diode. In 3T1D DRAM cell gated diode (D1) acts as a storage device and also as an amplifier, which leads to fast read access. Due to its high tolerance to process variation, high density, and low cost of memory as compared to 6T SRAM cell, it is universally used by the advanced microprocessor for on chip data and program memory. In the present paper, it has been shown that 3T1D DRAM cell can perform better in terms of fast read access as compared to 6T, 4T, 3T SRAM cells, respectively.

Keywords: DRAM cell, read access time, tanner EDA tool write access time and retention time, average power dissipation.

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Authors: M.Jalali Azizpour, S.Norouzi, H.Mohammadi Majd

Abstract:

The mechanical and tribological properties in WC-Co coatings are strongly affected by hardness and elasticity specifications. The results revealed the effect of spraying distance on microhardness and elasticity modulus of coatings. The metallurgical studies have been made on coated samples using optical microscopy, scanning electron microscopy (SEM).

Keywords: HVOF, Micro-indentation, Thermal spray, WC-Co.

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Authors: Hai-Qing Xie, Yun Zeng, Yong-Hong Yan, Jian-Ping Zeng, Tai-Hong Wang

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Photo-BJMOSFET (Bipolar Junction Metal-Oxide- Semiconductor Field Effect Transistor) fabricated on SOI film was proposed. ITO film is adopted in the device as gate electrode to reduce light absorption. Depletion region but not inversion region is formed in film by applying gate voltage (but low reverse voltage) to achieve high photo-to-dark-current ratio. Comparisons of photoelectriccharacteristics executed among VGK=0V, 0.3V, 0.6V, 0.9V and 1.0V (reverse voltage VAK is equal to 1.0V for total area of 10×10μm2). The results indicate that the greatest improvement in photo-to-dark-current ratio is achieved up to 2.38 at VGK=0.6V. In addition, photo-BJMOSFET is compatible with CMOS integration due to big input resistance

Keywords: Photo-BJMOSFET, Responsivity, Sensitivity, Spectral response.

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Authors: M.Jalali Azizpour, S.Norouzi, D.Sajedipour, H.Mohammadi majd, S.A.Hosseini, H.Talebi, A.Ghamari

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In this paper, the bond strength of thermal spray coatings in high speed shafts has been studied. The metallurgical and mechanical studies has been made on the coated samples and shaft using optical microscopy, scanning electron microscopy (SEM).

Keywords: Thermal spray, Residual stress, Wear mechanism, HVOF, Gas compressor shafts

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Authors: Pepin Magnangana Zoko Goyoro, Ibrahim James Moumouni, Sroy Abouty

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Orthogonal Frequency Division Multiplexing (OFDM) is an efficient method of data transmission for high speed communication systems. However, the main drawback of OFDM systems is that, it suffers from the problem of high Peak-to-Average Power Ratio (PAPR) which causes inefficient use of the High Power Amplifier and could limit transmission efficiency. OFDM consist of large number of independent subcarriers, as a result of which the amplitude of such a signal can have high peak values. In this paper, we propose an effective reduction scheme that combines DCT and SLM techniques. The scheme is composed of the DCT followed by the SLM using the Riemann matrix to obtain phase sequences for the SLM technique. The simulation results show PAPR can be greatly reduced by applying the proposed scheme. In comparison with OFDM, while OFDM had high values of PAPR –about 10.4dB our proposed method achieved about 4.7dB reduction of the PAPR with low complexities computation. This approach also avoids randomness in phase sequence selection, which makes it simpler to decode at the receiver. As an added benefit, the matrices can be generated at the receiver end to obtain the data signal and hence it is not required to transmit side information (SI).

Keywords: DCT transform, OFDM, PAPR, Riemann matrix, SLM.

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Authors: H. Bentarzi, A. Zitouni

Abstract:

The reliability of the power grid depends on the successful operation of thousands of protective relays. The failure of one relay to operate as intended may lead the entire power grid to blackout. In fact, major power system failures during transient disturbances may be caused by unnecessary protective relay tripping rather than by the failure of a relay to operate. Adequate relay testing provides a first defense against false trips of the relay and hence improves power grid stability and prevents catastrophic bulk power system failures. The goal of this research project is to design and enhance the relay tester using a technology such as Field Programmable Gate Array (FPGA) card NI 7851. A PC based tester framework has been developed using Simulink power system model for generating signals under different conditions (faults or transient disturbances) and LabVIEW for developing the graphical user interface and configuring the FPGA. Besides, the interface system has been developed for outputting and amplifying the signals without distortion. These signals should be like the generated ones by the real power system and large enough for testing the relay’s functionality. The signals generated that have been displayed on the scope are satisfactory. Furthermore, the proposed testing system can be used for improving the performance of protective relay.

Keywords: Amplifier class D, FPGA, protective relay, tester.

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Authors: M. S. Al-Assiri, M. M. El-Desoky, Ahmed A. Ibrahim, M. Abaker, A. A. Bahgat

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Nanocrystalline thin film of Na0.1V2O5.nH2O xerogel obtained by sol gel synthesis was used as gas sensor. Gas sensing properties of different gases such as hydrogen, petroleum and humidity were investigated. Applying XRD and TEM the size of the nanocrystals is found to be 7.5 nm. SEM shows a highly porous structure with submicron meter-sized voids present throughout the sample. FTIR measurement shows different chemical groups identifying the obtained series of gels. The sample was n-type semiconductor according to the thermoelectric power and electrical conductivity. It can be seen that the sensor response curves from 130oC to 150oC show a rapid increase in sensitivity for all types of gas injection, low response values for heating period and the rapid high response values for cooling period. This result may suggest that this material is able to act as gas sensor during the heating and cooling process.

Keywords: Sol gel, Thermoelectric power, XRD, TEM, Gas sensing.

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Authors: Isao Tomita

Abstract:

The detection of environmental gases, 12CO2, 13CO2, and CH4, using near-infrared semiconductor lasers with a short laser path length is studied by means of wavelength-modulation spectroscopy. The developed system is compact and has high sensitivity enough to detect the absorption peaks of isotopic 13CO2 of a 3-% CO2 gas at 2 μm with a path length of 2.4 m, where its peak size is two orders of magnitude smaller than that of the ordinary 12CO2 peaks. In addition, the detection of 12CO2 peaks of a 385-ppm (0.0385-%) CO2 gas in the air is made at 2 μm with a path length of 1.4 m. Furthermore, in pursuing the detection of an ancient environmental CH4 gas confined to a bubble in ice at the polar regions, measurements of the absorption spectrum for a trace gas of CH4 in a small area are attempted. For a 100-% CH4 gas trapped in a ∼ 1 mm3 glass container, the absorption peaks of CH4 are obtained at 1.65 μm with a path length of 3 mm, and also the gas pressure is extrapolated from the measured data.

Keywords: Environmental Gases, Near-Infrared Laser Detection, Wavelength-Modulation Spectroscopy.

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Authors: S. Zhuiykov, Zh. Hai, H. Xu, C. Xue

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Unique and distinctive properties could be obtained on such two-dimensional (2D) semiconductor as tungsten trioxide (WO₃) when the reduction from multi-layer to one fundamental layer thickness takes place. This transition without damaging single-layer on a large spatial resolution remained elusive until the atomic layer deposition (ALD) technique was utilized. Here we report the ALD-enabled atomic-layer-precision development of a single layer WO₃ with thickness of 0.77±0.07 nm on a large spatial resolution by using (^tBuN)₂W(NMe₂)₂ as tungsten precursor and H₂O as oxygen precursor, without affecting the underlying SiO₂/Si substrate. Versatility of ALD is in tuning recipe in order to achieve the complete WO₃ with desired number of WO₃ layers including monolayer. Governed by self-limiting surface reactions, the ALD-enabled approach is versatile, scalable and applicable for a broader range of 2D semiconductors and various device applications.

Keywords: Atomic layer deposition, tungsten oxide, WO3, two-dimensional semiconductors, single fundamental layer.

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Authors: K. E. Kaharudin, A. H. Hamidon, F. Salehuddin

Abstract:

Vertical Double Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is believed to suppress various short channel effect problems. The gate to channel coupling in vertical DG-MOSFET are doubled, thus resulting in higher current density. By having two gates, both gates are able to control the channel from both sides and possess better electrostatic control over the channel. In order to ensure that the transistor possess a superb turn-off characteristic, the subs-threshold swing (SS) must be kept at minimum value (60-90mV/dec). By utilizing SILVACO TCAD software, an n-channel vertical DG-MOSFET was successfully designed while keeping the sub-threshold swing (SS) value as minimum as possible. From the observation made, the value of sub-threshold swing (SS) was able to be varied by adjusting the height of the silicon pillar. The minimum value of sub-threshold swing (SS) was found to be 64.7mV/dec with threshold voltage (V_TH) of 0.895V. The ideal height of the vertical DG-MOSFET pillar was found to be at 0.265 µm.

Keywords: DG-MOSFET, pillar, SCE, vertical

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Authors: M. Chitsazi, B. Maraghechi, M. H. Rouhani

Abstract:

Three-dimensional simulation of harmonic up generation in free electron laser amplifier operating simultaneously with a cold and relativistic electron beam is presented in steady-state regime where the slippage of the electromagnetic wave with respect to the electron beam is ignored. By using slowly varying envelope approximation and applying the source-dependent expansion to wave equations, electromagnetic fields are represented in terms of the Hermit Gaussian modes which are well suited for the planar wiggler configuration. The electron dynamics is described by the fully threedimensional Lorentz force equation in presence of the realistic planar magnetostatic wiggler and electromagnetic fields. A set of coupled nonlinear first-order differential equations is derived and solved numerically. The fundamental and third harmonic radiation of the beam is considered. In addition to uniform beam, prebunched electron beam has also been studied. For this effect of sinusoidal distribution of entry times for the electron beam on the evolution of radiation is compared with uniform distribution. It is shown that prebunching reduces the saturation length substantially. For efficiency enhancement the wiggler is set to decrease linearly when the radiation of the third harmonic saturates. The optimum starting point of tapering and the slope of radiation in the amplitude of wiggler are found by successive run of the code.

Keywords: Free electron laser, Prebunching, Undulator, Wiggler.

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Authors: Mingyu Zhong, Yi Xie

Abstract:

Results in one field necessarily give insight into the others, and all have much potential for scientific and technological application. The Hadamard-transform technique once been applied to the spectrometry also has its use in the SNR Enhancement of OTDR. In this report, a new set of code (Simplex-codes) is discussed and where the addition gain of SNR come from is implied.

Keywords: Hadamard-transform, matrixes, averaging, opticaltime-domain reflectometry (OTDR).

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Authors: A. Apostolopoulou, D. Sygkridou, A. N. Kalarakis, E. Stathatos

Abstract:

Mesoscopic perovskite solar cells (mp-PSCs) with mesoporous bilayer were fabricated under ambient conditions. The bilayer was formed by capping the mesoporous TiO₂ layer with a layer of In₂O₃. CH₃NH₃I_3-xCl_x mixed halide perovskite was prepared through the one-step method and was used as the light absorber. The mp-PSCs with the composite TiO₂/In₂O₃ mesoporous layer exhibited optimized electrical parameters, compared with the PSCs that employed only a TiO₂ mesoporous layer, with a current density of 23.86 mA/cm², open circuit voltage of 0.863 V, fill factor of 0.6 and a power conversion efficiency of 11.2%. These results indicate that the formation of a proper semiconductor capping layer over the basic TiO₂ mesoporous layer can facilitate the electron transfer, suppress the recombination and subsequently lead to higher charge collection efficiency.

Keywords: Ambient conditions, high efficiency solar cells, mesoscopic perovskite solar cells, TiO2/In2O3 bilayer.

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Authors: Devin Atkin, Orly Yadid-Pecht

Abstract:

The continual demands for increasing resolution and dynamic range in complimentary metal-oxide semiconductor (CMOS) image sensors have resulted in exponential increases in the amount of data that need to be read out of an image sensor, and existing readouts cannot keep up with this demand. Interesting approaches such as sparse and burst readouts have been proposed and show promise, but at considerable trade-offs in other specifications. To this end, we have begun designing and evaluating various readout topologies centered around an attempt to parallelize the sensor readout. In this paper, we have designed, simulated, and started testing a light-controlled oscillator topology with dual column and row readouts. We expect the parallel readout structure to offer greater speed and alleviate the trade-off typical in this topology, where slow pixels present a major framerate bottleneck.

Keywords: CMOS image sensors, high-speed capture, wide dynamic range, light controlled oscillator.

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Authors: Ravneet Kaur, Joydeep Acharya, Sudhanshu Gaur

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Artificial Intelligence (AI) has the potential to transform manufacturing by improving shop floor processes such as production, maintenance and quality. However, industrial datasets are notoriously difficult to extract in a real-time, streaming fashion thus, negating potential AI benefits. The main example is some specialized industrial controllers that are operated by custom software which complicates the process of connecting them to an Information Technology (IT) based data acquisition network. Security concerns may also limit direct physical access to these controllers for data acquisition. To connect the Operational Technology (OT) data stored in these controllers to an AI application in a secure, reliable and available way, we propose a novel Industrial IoT (IIoT) solution in this paper. In this solution, we demonstrate how video cameras can be installed in a factory shop floor to continuously obtain images of the controller HMIs. We propose image pre-processing to segment the HMI into regions of streaming data and regions of fixed meta-data. We then evaluate the performance of multiple Optical Character Recognition (OCR) technologies such as Tesseract and Google vision to recognize the streaming data and test it for typical factory HMIs and realistic lighting conditions. Finally, we use the meta-data to match the OCR output with the temporal, domain-dependent context of the data to improve the accuracy of the output. Our IIoT solution enables reliable and efficient data extraction which will improve the performance of subsequent AI applications.

Keywords: Human machine interface, industrial internet of things, internet of things, optical character recognition, video analytic.

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Authors: Hung-Pei Hsu, Jyi-Tsong Lin, Po-Hsieh Lin, Cheng-Hsien Chang, Ming-Tsung Shih, Chan-Hsiang Chang, Shih-Chuan Tseng, Min-Yan Lin, Shih-Wen Hsu

Abstract:

In this paper, we propose a novel metal oxide semiconductor field effect transistor with L-shaped channel structure (LMOS), and several type of L-shaped structures are also designed, studied and compared with the conventional MOSFET device for the same average gate length (Lavg). The proposed device electrical characteristics are analyzed and evaluated by three dimension (3-D) ISE-TCAD simulator. It can be confirmed that the LMOS devices have higher on-state drain current and both lower drain-induced barrier lowering (DIBL) and subthreshold swing (S.S.) than its conventional counterpart has. In addition, the transconductance and voltage gain properties of the LMOS are also improved.

Keywords: Average gate length (Lavg), drain-induced barrier lowering (DIBL), L-shaped channel MOSFET (LMOS), subthreshold swing (S.S.).

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Authors: Halil Tanyer Eyyuboğu

Abstract:

For a generalized Hermite sinosiodal / hyperbolic Gaussian beam passing through an ABCD system with a finite aperture, the propagation properties are derived using the Collins integral. The results are obtained in the form of intensity graphs indicating that previously demonstrated rules of reciprocity are applicable, while the existence of the aperture accelerates this transformation.

Keywords: Optical communications, Hermite-Gaussian beams, ABCD system.

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Authors: M. Ferguson, T. Konkova, I. Violatos

Abstract:

Microstructure analysis of additively manufactured (AM) materials is an important step in understanding the interrelationship between mechanical properties and materials performance. Literature on the effect of a laser-based AM process parameters on the microstructure in the substrate-deposit interface is limited. The interface region, the adjoining area of substrate and deposit, is characterized by the presence of the fusion zone (FZ) and heat affected zone (HAZ) experiencing rapid thermal gyrations resulting in thermal induced transformations. Inconel 718 was utilized as a work material for both the substrate and deposit. Three blocks of Inconel 718 material were deposited by Direct Energy Deposition (DED) using three different laser powers, 550W, 750W and 950W, respectively. A coupled thermo-mechanical transient approach was utilized to correlate temperature history to the evolution of microstructure. Thermal history of the deposition process was monitored with the thermocouples installed inside the substrate material. Interface region of the blocks were analysed with Optical Microscopy (OM) and Scanning Electron Microscopy (SEM) including electron back-scattered diffraction (EBSD) technique. Laser power was found to influence the dissolution of intermetallic precipitated phases in the substrate and grain growth in the interface region. Microstructure and thermal history data were utilized to draw conclusive comparisons between the investigated process parameters.

Keywords: Additive manufacturing, direct energy deposition, electron back-scatter diffraction, finite element analysis, Inconel 718, microstructure, optical microscopy, scanning electron microscopy, substrate-deposit interface region.

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Authors: Kaige Shi, Chao Jiang, Xin Li

Abstract:

The swirl gripper is an electrically activated noncontact handling device that uses swirling airflow to generate a lifting force. This force can be used to pick up a workpiece placed underneath the swirl gripper without any contact. It is applicable, for example, in the semiconductor wafer production line, where contact must be avoided during the handling and moving of a workpiece to minimize damage. When a workpiece levitates underneath a swirl gripper, the gap height between them is crucial for safe handling. Therefore, in this paper, we propose a method to estimate the levitation gap height by detecting pressure at two points. The method is based on theoretical model of the swirl gripper, and has been experimentally verified. Furthermore, the force between the gripper and the workpiece can also be estimated using the detected pressure. As a result, the nonlinear relationship between the force and gap height can be linearized by adjusting the rotating speed of the fan in the swirl gripper according to the estimated force and gap height. The linearized relationship is expected to enhance handling stability of the workpiece.

Keywords: Swirl gripper, noncontact handling, levitation, gap height estimation.

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Authors: Su Jeong Lee, Tae Il Lee, Jung Han Kim, Chul-Hong Kim, Gee Sung Chae, Jae-Min Myoung

Abstract:

The contact resistance between source/drain electrodes and semiconductor layer is an important parameter affecting electron transporting performance in the thin film transistor (TFT). In this work, we introduced a transparent and the solution prossable single-walled carbon nanotube (SWCNT)/Al-doped ZnO nano particle (AZO NP) bilayer electrodes showing low contact resistance with indium-oxide (In2O3) sol gel thin film. By inserting low work function AZO NPs into the interface between the SWCNTs and the In2O3 which has a high energy barrier, we could obtain an electrical Ohmic contact between them. Finally, with the SWCNT-AZO NP bilayer electrodes, we successfully fabricated a TFT showing a field effect mobility of 5.38 cm2/V·s at 250°C.

Keywords: Single-walled carbon nanotube (SWCNT), Al-doped ZnO (AZO) nanoparticle, contact resistance, Thin-film transistor (TFT).

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Authors: C. M. M. Paschoal, D. do N. Souza, L. A. P. Santos

Abstract:

In this study three commercial semiconductor devices were characterized in the laboratory for computed tomography dosimetry: one photodiode and two phototransistors. It was evaluated four responses to the irradiation: dose linearity, energy dependence, angular dependence and loss of sensitivity after X ray exposure. The results showed that the three devices have proportional response with the air kerma; the energy dependence displayed for each device suggests that some calibration factors would be applied for each one; the angular dependence showed a similar pattern among the three electronic components. In respect to the fourth parameter analyzed, one phototransistor has the highest sensitivity however it also showed the greatest loss of sensitivity with the accumulated dose. The photodiode was the device with the smaller sensitivity to radiation, on the other hand, the loss of sensitivity after irradiation is negligible. Since high accuracy is a desired feature for a dosimeter, the photodiode can be the most suitable of the three devices for dosimetry in tomography. The phototransistors can also be used for CT dosimetry, however it would be necessary a correction factor due to loss of sensitivity with accumulated dose.

Keywords: Dosimetry, computed tomography, phototransistor, photodiode

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Authors: M.Jalali Azizpour, S.Norouzi, H.mohammadi Majd, M.M.Rabieh, D.Sajedipour, A. Jaderi

Abstract:

The mechanical and tribological properties in WC-Co coatings are strongly affected by hardness and elasticity specifications. The results revealed the effect of spraying distance on microhardness and elasticity modulus of coatings. The metallurgical studies have been made on coated samples using optical microscopy, scanning electron microscopy (SEM).

Keywords: Elasticity modulus, HVOF, Micro-indentation, Thermal spray, WC-Co

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Authors: Debesh R. Roy

Abstract:

The fundamental issue in understanding the origin and growth mechanism of nanomaterials, from a fundamental unit is a big challenging problem to the scientists. Recently, an immense attention is generated to the researchers for prediction of exceptionally stable atomic cluster units as the building units for future smart materials. The present study is a systematic investigation on the stability and electronic properties of a series of bimetallic (semiconductor-alkaline earth) clusters, viz., BxMg3 (x=1-5) is performed, in search for exceptional and/ or unusual stable motifs. A very popular hybrid exchange-correlation functional, B3LYP along with a higher basis set, viz., 6-31+G[d,p] is employed for this purpose under the density functional formalism. The magic stability among the concerned clusters is explained using the jellium model. It is evident from the present study that the magic stability of B4Mg3 cluster arises due to the jellium shell closure.

Keywords: Atomic Clusters, Density Functional Theory, Jellium Model, Magic Clusters, Smart Nanomaterials.

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Authors: Tadayuki Kyoutani, Shigeyuki Haruyama, Ken Kaminishi, Zefry Darmawan

Abstract:

Japan’s semiconductor industries have developed greatly in recent years. Many were started from a Small and Medium-sized Enterprises (SMEs) that found at a good circumstance and now become the prosperous industries in the world. Sustainable growth factors that support the creation of spirit value inside the Japanese company were strongly embedded through performance. Those factors were not clearly defined among each company. A series of literature research conducted to explore quantitative text mining about the definition of sustainable growth factors. Sustainable criteria were developed from previous research to verify the definition of the factors. A typical frame work was proposed as a systematical approach to develop sustainable growth factor in a specific company. Result of approach was review in certain period shows that factors influenced in sustainable growth was importance for the company to achieve the goal.

Keywords: SME, manufacture, sustainable, growth factor.

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