@article{(Open Science Index):https://publications.waset.org/pdf/10006167,
	  title     = {Development of Single Layer of WO3 on Large Spatial Resolution by Atomic Layer Deposition Technique},
	  author    = {S. Zhuiykov and  Zh. Hai and  H. Xu and  C. Xue},
	  country	= {},
	  institution	= {},
	  abstract     = {Unique and distinctive properties could be obtained on such two-dimensional (2D) semiconductor as tungsten trioxide (WO3) when the reduction from multi-layer to one fundamental layer thickness takes place. This transition without damaging single-layer on a large spatial resolution remained elusive until the atomic layer deposition (ALD) technique was utilized. Here we report the ALD-enabled atomic-layer-precision development of a single layer WO3 with thickness of 0.77±0.07 nm on a large spatial resolution by using (tBuN)2W(NMe2)2 as tungsten precursor and H2O as oxygen precursor, without affecting the underlying SiO2/Si substrate. Versatility of ALD is in tuning recipe in order to achieve the complete WO3 with desired number of WO3 layers including monolayer. Governed by self-limiting surface reactions, the ALD-enabled approach is versatile, scalable and applicable for a broader range of 2D semiconductors and various device applications.},
	    journal   = {International Journal of Materials and Metallurgical Engineering},
	  volume    = {11},
	  number    = {1},
	  year      = {2017},
	  pages     = {46 - 49},
	  ee        = {https://publications.waset.org/pdf/10006167},
	  url   	= {https://publications.waset.org/vol/121},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 121, 2017},
	}