%0 Journal Article
	%A S. Zhuiykov and  Zh. Hai and  H. Xu and  C. Xue
	%D 2017
	%J International Journal of Materials and Metallurgical Engineering
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 121, 2017
	%T Development of Single Layer of WO3 on Large Spatial Resolution by Atomic Layer Deposition Technique
	%U https://publications.waset.org/pdf/10006167
	%V 121
	%X Unique and distinctive properties could be obtained on such two-dimensional (2D) semiconductor as tungsten trioxide (WO3) when the reduction from multi-layer to one fundamental layer thickness takes place. This transition without damaging single-layer on a large spatial resolution remained elusive until the atomic layer deposition (ALD) technique was utilized. Here we report the ALD-enabled atomic-layer-precision development of a single layer WO3 with thickness of 0.77±0.07 nm on a large spatial resolution by using (tBuN)2W(NMe2)2 as tungsten precursor and H2O as oxygen precursor, without affecting the underlying SiO2/Si substrate. Versatility of ALD is in tuning recipe in order to achieve the complete WO3 with desired number of WO3 layers including monolayer. Governed by self-limiting surface reactions, the ALD-enabled approach is versatile, scalable and applicable for a broader range of 2D semiconductors and various device applications.
	%P 46 - 49