Search results for: neutron transmutation doping
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 87

Search results for: neutron transmutation doping

57 Effect of Cladding Direction on Residual Stress Distribution in Laser Cladded Rails

Authors: Taposh Roy, Anna Paradowska, Ralph Abrahams, Quan Lai, Michael Law, Peter Mutton, Mehdi Soodi, Wenyi Yan

Abstract:

In this investigation, a laser cladding process with a powder feeding was used to deposit stainless steel 410L (high strength, excellent resistance to abrasion and corrosion, and great laser compatibility) onto railhead (higher strength, heat treated hypereutectoid rail grade manufactured in accordance with the requirements of European standard EN 13674 Part 1 for R400HT grade), to investigate the development and controllability of process-induced residual stress in the cladding, heat-affected zone (HAZ) and substrate and to analyse their correlation with hardness profile during two different laser cladding directions (across and along the track). Residual stresses were analysed by neutron diffraction at OPAL reactor, ANSTO. Neutron diffraction was carried out on the samples in longitudinal (parallel to the rail), transverse (perpendicular to the rail) and normal (through thickness) directions with high spatial resolution through the thickness. Due to the thick rail and thin cladding, 4 mm thick reference samples were prepared from every specimen by Electric Discharge Machining (EDM). Metallography across the laser claded sample revealed four distinct zones: The clad zone, the dilution zone, HAZ and the substrate. Compressive residual stresses were found in the clad zone and tensile residual stress in the dilution zone and HAZ. Laser cladding in longitudinally cladding induced higher tensile stress in the HAZ, whereas transversely cladding rail showed lower tensile behavior.

Keywords: Laser cladding, residual stress, neutron diffraction, HAZ.

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56 Vertically Grown p–Type ZnO Nanorod on Ag Thin Film

Authors: Jihyun Park, Tae Il Lee, Jae-Min Myoung

Abstract:

A Silver (Ag) thin film is introduced as a template and doping source for vertically aligned p–type ZnO nanorods. ZnO nanorods were grown using an ammonium hydroxide based hydrothermal process. During the hydrothermal process, the Ag thin film was dissolved to generate Ag ions in the solution. The Ag ions can contribute to doping in the wurzite structure of ZnO and the (111) grain of Ag thin film can be the epitaxial temporal template for the (0001) plane of ZnO. Hence, Ag–doped p–type ZnO nanorods were successfully grown on the substrate, which can be an electrode or semiconductor for the device application. To demonstrate the potentials of this idea, p–n diode was fabricated and its electrical characteristics were demonstrated.

Keywords: Ag–doped ZnO nanorods, Hydrothermal process, p–n homo–junction diode, p–type ZnO.

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55 Doping Profile Measurement and Characterization by Scanning Capacitance Microscope for PocketImplanted Nano Scale n-MOSFET

Authors: Muhibul Haque Bhuyan, Farseem Mannan Mohammedy, Quazi Deen Mohd Khosru

Abstract:

This paper presents the doping profile measurement and characterization technique for the pocket implanted nano scale n-MOSFET. Scanning capacitance microscopy and atomic force microscopy have been used to image the extent of lateral dopant diffusion in MOS structures. The data are capacitance vs. voltage measurements made on a nano scale device. The technique is nondestructive when imaging uncleaved samples. Experimental data from the published literature are presented here on actual, cleaved device structures which clearly indicate the two-dimensional dopant profile in terms of a spatially varying modulated capacitance signal. Firstorder deconvolution indicates the technique has much promise for the quantitative characterization of lateral dopant profiles. The pocket profile is modeled assuming the linear pocket profiles at the source and drain edges. From the model, the effective doping concentration is found to use in modeling and simulation results of the various parameters of the pocket implanted nano scale n-MOSFET. The potential of the technique to characterize important device related phenomena on a local scale is also discussed.

Keywords: Linear Pocket Profile, Pocket Implanted n-MOSFET, Scanning Capacitance Microscope, Atomic Force Microscope.

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54 First-Principles Density Functional Study of Nitrogen-Doped P-Type ZnO

Authors: Abdusalam Gsiea, Ramadan Al-habashi, Mohamed Atumi, Khaled Atmimi

Abstract:

We present a theoretical investigation on the structural, electronic properties and vibrational mode of nitrogen impurities in ZnO. The atomic structures, formation and transition energies and vibrational modes of (NO3)i interstitial or NO4 substituting on an oxygen site ZnO were computed using ab initio total energy methods. Based on Local density functional theory, our calculations are in agreement with one interpretation of bound-excition photoluminescence for N-doped ZnO. First-principles calculations show that (NO3)i defects interstitial or NO4 substituting on an Oxygen site in ZnO are important suitable impurity for p-type doping in ZnO. However, many experimental efforts have not resulted in reproducible p-type material with N2 and N2O doping. by means of first-principle pseudo-potential calculation we find that the use of NO or NO2 with O gas might help the experimental research to resolve the challenge of achieving p-type ZnO.

Keywords: Density functional theory, nitrogen, p-type, ZnO.

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53 Saturated Gain of Doped Multilayer Quantum Dot Semiconductor Optical Amplifiers

Authors: Omar Qasaimeh

Abstract:

The effect of the number of quantum dot (QD) layers on the saturated gain of doped QD semiconductor optical amplifiers (SOAs) has been studied using multi-population coupled rate equations. The developed model takes into account the effect of carrier coupling between adjacent layers. It has been found that increasing the number of QD layers (K) increases the unsaturated optical gain for K<8 and approximately has no effect on the unsaturated gain for K ≥ 8. Our analysis shows that the optimum ptype concentration that maximizes the unsaturated optical gain of the ground state is NA Ôëê 0.75 ×1018cm-3 . On the other hand, it has been found that the saturated optical gain for both the ground state and the excited state are strong function of both the doping concentration and K where we find that it is required to dope the dots with n-type concentration for very large K at high photon energy.

Keywords: doping, multilayer, quantum dot optical amplifier, saturated gain.

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52 C-V Characterization and Analysis of Temperature and Channel Thickness Effects on Threshold Voltage of Ultra-thin SOI MOSFET by Self-Consistent Model

Authors: Shuvro Chowdhury, Esmat Farzana, Rizvi Ahmed, A. T. M. Golam Sarwar, M. Ziaur Rahman Khan

Abstract:

The threshold voltage and capacitance voltage characteristics of ultra-thin Silicon-on-Insulator MOSFET are greatly influenced by the thickness and doping concentration of the silicon film. In this work, the capacitance voltage characteristics and threshold voltage of the device have been analyzed with quantum mechanical effects using the Self-Consistent model. Reduction of channel thickness and adding doping impurities cause an increase in the threshold voltage. Moreover, the temperature effects cause a significant amount of threshold voltage shift. The temperature dependence of threshold voltage has also been observed with Self- Consistent approach which are well supported from experimental performance of practical devices.

Keywords: C-V characteristics, Self-Consistent Analysis, Siliconon-Insulator, Ultra-thin film.

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51 Thermoelectric Properties of Doped Polycrystalline Silicon Film

Authors: Li Long, Thomas Ortlepp

Abstract:

The transport properties of carriers in polycrystalline silicon film affect the performance of polycrystalline silicon-based devices. They depend strongly on the grain structure, grain boundary trap properties and doping concentration, which in turn are determined by the film deposition and processing conditions. Based on the properties of charge carriers, phonons, grain boundaries and their interactions, the thermoelectric properties of polycrystalline silicon are analyzed with the relaxation time approximation of the Boltzmann transport equation. With this approach, thermal conductivity, electrical conductivity and Seebeck coefficient as a function of grain size, trap properties and doping concentration can be determined. Experiment on heavily doped polycrystalline silicon is carried out and measurement results are compared with the model.

Keywords: Conductivity, polycrystalline silicon, relaxation time approximation, Seebeck coefficient, thermoelectric property.

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50 Influences of Si and C- Doping on the Al-27 and N-14 Quardrupole Coupling Constants in AlN Nanotubes: A DFT Study

Authors: A.Seif, H.Aghaie, K.Majlesi

Abstract:

A computational study at the level density functional theory (DFT) was carried out to investigate the influences of Si and C-doping on the 14N and 27Al quadrupole coupling constant in the (10, 0) zigzag single ? walled Aluminum-Nitride nanotube (AlNNT). To this aim, a 1.16nm, length of AlNNT consisting of 40 Al atoms and 40 N atoms were selected where the end atoms are capped by hydrogen atom. To follow the purpose, three Si atoms and three C atoms were doped instead of three Al atoms and three N atoms as a central ring in the surface of the Si and C-doped AlNNT. At first both of systems optimized at the level of BLYP method and 6-31G (d) basis set and after that, the NQR parameters were calculated at the level BLYP method and 6-311+G** basis set in two optimized forms. The calculate CQ values for both optimized AlNNT systems, raw and Si and C-doped, reveal different electronic environments in the mentioned systems. It was also demonstrated that the end nuclei have the largest CQ values in both considered AlNNT systems. All the calculations were carried out using Gaussian 98 package of program.

Keywords: DFT, Quadrupole Coupling Constant, Si and CDoping, Single-Walled AlN nanotubes.

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49 Iron(III)-Tosylate Doped PEDOT and PEG: A Nanoscale Conductivity Study of an Electrochemical System with Biosensing Applications

Authors: Giulio Rosati, Luciano Sappia, Rossana Madrid, Noemi Rozlòsnik

Abstract:

The addition of PEG of different molecular weights has important effects on the physical, electrical and electrochemical properties of iron(III)-tosylate doped PEDOT. This particular polymer can be easily spin coated over plastic discs, optimizing thickness and uniformity of the PEDOT-PEG films. The conductivity and morphological analysis of the hybrid PEDOT-PEG polymer by 4-point probe (4PP), 12-point probe (12PP), and conductive AFM (C-AFM) show strong effects of the PEG doping. Moreover, the conductive films kinetics at the nanoscale, in response to different bias voltages, change radically depending on the PEG molecular weight. The hybrid conductive films show also interesting electrochemical properties, making the PEDOT PEG doping appealing for biosensing applications both for EIS-based and amperometric affinity/catalytic biosensors.

Keywords: Atomic force microscopy, biosensors, four-point probe, nano-films, PEDOT.

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48 CLASS, A New Tool for Nuclear Scenarios: Description and First Application

Authors: B. Mouginot, J.B. Clavel, N Thiolliere

Abstract:

The presented work is motivated by a french law regarding nuclear waste management. In order to avoid the limitation coming with the usage of the existing scenario codes, as COSI, VISION or FAMILY, the Core Library for Advance Scenario Simulation (CLASS) is being develop. CLASS is an open source tool, which allows any user to simulate an electronuclear scenario. The main CLASS asset, is the possibility to include any type of reactor, even a complitely new concept, through the generation of its ACSII evolution database. In the present article, the CLASS working basis will be presented as well as a simple exemple in order to show his potentiel. In the considered exemple, the effect of the transmutation will be assessed on Minor Actinide Inventory produced by PWR reactors.

Keywords: Electronuclear scenario, reactor, simulation, nuclear waste.

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47 Optical Reflectance of Pure and Doped Tin Oxide: From Thin Films to Poly-Crystalline Silicon/Thin Film Device

Authors: Smaali Assia, Outemzabet Ratiba, Media El Mahdi, Kadi Mohamed

Abstract:

Films of pure tin oxide SnO2 and in presence of antimony atoms (SnO2-Sb) deposited onto glass substrates have shown a sufficiently high energy gap to be transparent in the visible region, a high electrical mobility and a carrier concentration which displays a good electrical conductivity [1]. In this work, the effects of polycrystalline silicon substrate on the optical properties of pure and Sb doped tin oxide is investigated. We used the APCVD (atmospheric pressure chemical vapour deposition) technique, which is a low-cost and simple technique, under nitrogen ambient, for growing this material. A series of SnO2 and SnO2-Sb have been deposited onto polycrystalline silicon substrates with different contents of antimony atoms at the same conditions of deposition (substrate temperature, flow oxygen, duration and nitrogen atmosphere of the reactor). The effect of the substrate in terms of morphology and nonlinear optical properties, mainly the reflectance, was studied. The reflectance intensity of the device, compared to the reflectance of tin oxide films deposited directly on glass substrate, is clearly reduced on the overall wavelength range. It is obvious that the roughness of the poly-c silicon plays an important role by improving the reflectance and hence the optical parameters. A clear shift in the minimum of the reflectance upon doping level is observed. This minimum corresponds to strong free carrier absorption, resulting in different plasma frequency. This effect is followed by an increase in the reflectance depending of the antimony doping. Applying the extended Drude theory to the combining optical and electrical obtained results these effects are discussed.

Keywords: Doping, oxide, reflectance.

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46 Simulation of Hydrogenated Boron Nitride Nanotube’s Mechanical Properties for Radiation Shielding Applications

Authors: Joseph E. Estevez, Mahdi Ghazizadeh, James G. Ryan, Ajit D. Kelkar

Abstract:

Radiation shielding is an obstacle in long duration space exploration. Boron Nitride Nanotubes (BNNTs) have attracted attention as an additive to radiation shielding material due to B10’s large neutron capture cross section. The B10 has an effective neutron capture cross section suitable for low energy neutrons ranging from 10-5 to 104 eV and hydrogen is effective at slowing down high energy neutrons. Hydrogenated BNNTs are potentially an ideal nanofiller for radiation shielding composites. We use Molecular Dynamics (MD) Simulation via Material Studios Accelrys 6.0 to model the Young’s Modulus of Hydrogenated BNNTs. An extrapolation technique was employed to determine the Young’s Modulus due to the deformation of the nanostructure at its theoretical density. A linear regression was used to extrapolate the data to the theoretical density of 2.62g/cm3. Simulation data shows that the hydrogenated BNNTs will experience a 11% decrease in the Young’s Modulus for (6,6) BNNTs and 8.5% decrease for (8,8) BNNTs compared to non-hydrogenated BNNT’s. Hydrogenated BNNTs are a viable option as a nanofiller for radiation shielding nanocomposite materials for long range and long duration space exploration.

Keywords: Boron Nitride Nanotube, Radiation Shielding, Young Modulus, Atomistic Modeling.

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45 Inversion Layer Effective Mobility Model for Pocket Implanted Nano Scale n-MOSFET

Authors: Muhibul Haque Bhuyan, Quazi D. M. Khosru

Abstract:

Carriers scattering in the inversion channel of n- MOSFET dominates the drain current. This paper presents an effective electron mobility model for the pocket implanted nano scale n-MOSFET. The model is developed by using two linear pocket profiles at the source and drain edges. The channel is divided into three regions at source, drain and central part of the channel region. The total number of inversion layer charges is found for these three regions by numerical integration from source to drain ends and the number of depletion layer charges is found by using the effective doping concentration including pocket doping effects. These two charges are then used to find the effective normal electric field, which is used to find the effective mobility model incorporating the three scattering mechanisms, such as, Coulomb, phonon and surface roughness scatterings as well as the ballistic phenomena for the pocket implanted nano-scale n-MOSFET. The simulation results show that the derived mobility model produces the same results as found in the literatures.

Keywords: Linear Pocket Profile, Pocket Implanted n-MOSFET, Effective Electric Field and Effective Mobility Model.

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44 Synthesis and Fluorescence Spectroscopy of Sulphonic Acid-Doped Polyaniline When Exposed to Oxygen Gas

Authors: S.F.S. Draman, R. Daik, A. Musa

Abstract:

Three sulphonic acid-doped polyanilines were synthesized through chemical oxidation at low temperature (0-5 oC) and potential of these polymers as sensing agent for O2 gas detection in terms of fluorescence quenching was studied. Sulphuric acid, dodecylbenzene sulphonic acid (DBSA) and camphor sulphonic acid (CSA) were used as doping agents. All polymers obtained were dark green powder. Polymers obtained were characterized by Fourier transform infrared spectroscopy, ultraviolet-visible absorption spectroscopy, thermogravimetry analysis, elemental analysis, differential scanning calorimeter and gel permeation chromatography. Characterizations carried out showed that polymers were successfully synthesized with mass recovery for sulphuric aciddoped polyaniline (SPAN), DBSA-doped polyaniline (DBSA-doped PANI) and CSA-doped polyaniline (CSA-doped PANI) of 71.40%, 75.00% and 39.96%, respectively. Doping level of SPAN, DBSAdoped PANI and CSA-doped PANI were 32.86%, 33.13% and 53.96%, respectively as determined based on elemental analysis. Sensing test was carried out on polymer sample in the form of solution and film by using fluorescence spectrophotometer. Samples of polymer solution and polymer film showed positive response towards O2 exposure. All polymer solutions and films were fully regenerated by using N2 gas within 1 hour period. Photostability study showed that all samples of polymer solutions and films were stable towards light when continuously exposed to xenon lamp for 9 hours. The relative standard deviation (RSD) values for SPAN solution, DBSA-doped PANI solution and CSA-doped PANI solution for repeatability were 0.23%, 0.64% and 0.76%, respectively. Meanwhile RSD values for reproducibility were 2.36%, 6.98% and 1.27%, respectively. Results for SPAN film, DBSAdoped PANI film and CSA-doped PANI film showed the same pattern with RSD values for repeatability of 0.52%, 4.05% and 0.90%, respectively. Meanwhile RSD values for reproducibility were 2.91%, 10.05% and 7.42%, respectively. The study on effect of the flow rate on response time was carried out using 3 different rates which were 0.25 mL/s, 1.00 mL/s and 2.00 mL/s. Results obtained showed that the higher the flow rate, the shorter the response time.

Keywords: conjugated polymer, doping, fluorescence quenching, oxygen gas.

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43 Effective Charge Coupling in Low Dimensional Doped Quantum Antiferromagnets

Authors: Suraka Bhattacharjee, Ranjan Chaudhury

Abstract:

The interaction between the charge degrees of freedom for itinerant antiferromagnets is investigated in terms of generalized charge stiffness constant corresponding to nearest neighbour t-J model and t1-t2-t3-J model. The low dimensional hole doped antiferromagnets are the well known systems that can be described by the t-J-like models. Accordingly, we have used these models to investigate the fermionic pairing possibilities and the coupling between the itinerant charge degrees of freedom. A detailed comparison between spin and charge couplings highlights that the charge and spin couplings show very similar behaviour in the over-doped region, whereas, they show completely different trends in the lower doping regimes. Moreover, a qualitative equivalence between generalized charge stiffness and effective Coulomb interaction is also established based on the comparisons with other theoretical and experimental results. Thus it is obvious that the enhanced possibility of fermionic pairing is inherent in the reduction of Coulomb repulsion with increase in doping concentration. However, the increased possibility can not give rise to pairing without the presence of any other pair producing mechanism outside the t-J model. Therefore, one can conclude that the t-J-like models themselves solely are not capable of producing conventional momentum-based superconducting pairing on their own.

Keywords: Generalized charge stiffness constant, charge coupling, effective Coulomb interaction, t-J-like models, momentum-space pairing.

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42 Appraisal of Trace Elements in Scalp Hair of School Children in Kandal Province, Cambodia

Authors: A. Yavar, S. Sarmani, K. S. Khoo

Abstract:

The analysis of trace elements in human hair provides crucial insights into an individual's nutritional status and environmental exposure. This research aimed to examine the levels of toxic and essential elements in the scalp hair of school children aged 12-17 from three villages (Anglong Romiot (AR), Svay Romiot (SR), and Kampong Kong (KK)) in Cambodia's Kandal province, a region where residents are especially vulnerable to toxic elements, notably arsenic (As), due to their dietary habits, lifestyle, and environmental conditions. The scalp hair samples were analyzed using the k0-Instrumental Neutron Activation method (k0-INAA), with a six-hour irradiation period in the Malaysian Nuclear Agency (MNA) research reactor followed by High Purity Germanium (HPGe) detector use to identify the gamma peaks of radionuclides. The analysis identified 31 elements in the human hair from the study area, including As, Au, Br, Ca, Ce, Co, Dy, Eu-152m, Hg-197, Hg-203, Ho, Ir, K, La, Lu, Mn, Na, Pa, Pt-195m, Pt-197, Sb, Sc-46, Sc-47, Sm, Sn-117m, W-181, W-187, Yb-169, Yb-175, Zn, and Zn-69m. The accuracy of the method was verified through the analysis of ERM-DB001-human hair as a Certified Reference Material (CRM), with the results demonstrating consistency with the certified values. Given the prevalent arsenic pollution in the research area, the study also examined the relationship between the concentration of As and other elements using Pearson's correlation test. The outcomes offer a comprehensive resource for future investigations into toxic and essential element presence in the region. In the main body of the paper, a more extensive discussion on the implications of arsenic pollution and the correlations observed is provided to enhance understanding and inform future research directions.

Keywords: Human scalp hair, toxic and essential elements, Kandal Province, Cambodia, k0-Instrumental Neutron Activation Method.

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41 Gyrotactic Microorganisms Mixed Convection Nanofluid Flow along an Isothermal Vertical Wedge in Porous Media

Authors: A. Mahdy

Abstract:

The main objective of the present article is to explore the state of mixed convection nanofluid flow of gyrotactic microorganisms from an isothermal vertical wedge in porous medium. In our pioneering investigation, the easiest possible boundary conditions have been employed, in other words when the temperature, the nanofluid and motile microorganisms’ density have been considered to be constant on the wedge wall. Adding motile microorganisms to the nanofluid tends to enhance microscale mixing, mass transfer, and improve the nanofluid stability. Upon the Oberbeck–Boussinesq approximation and non-similarity transmutation, the paradigm of nonlinear equations are obtained and tackled numerically by using the R.K. Gill and shooting methods to obtain the dimensionless velocity, temperature, nanoparticle concentration and motile microorganisms density together with the reduced Sherwood, Nusselt, and numbers. Bioconvection parameters have strong effect upon the motile microorganism, heat, and volume fraction of nanoparticle transport rates. In the case when bioconvection is neglected, the obtained computations were found in very good agreement with the previous published data.

Keywords: Bioconvection, wedge, gyrotactic microorganisms, porous media, nanofluid, mixed.

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40 Effect of Manganese Doping on Ferrroelectric Properties of (K0.485Na0.5Li0.015)(Nb0.98V0.02)O3 Lead-Free Piezoceramic

Authors: Chongtham Jiten, Radhapiyari Laishram, K. Chandramani Singh

Abstract:

Alkaline niobate (Na0.5K0.5)NbO3 ceramic system has attracted major attention in view of its potential for replacing the highly toxic but superior lead zirconate titanate (PZT) system for piezoelectric applications. Recently, a more detailed study of this system reveals that the ferroelectric and piezoelectric properties are optimized in the Li- and V-modified system having the composition (K0.485Na0.5Li0.015)(Nb0.98V0.02)O3. In the present work, we further study the pyroelectric behaviour of this composition along with another doped with Mn4+. So, (K0.485Na0.5Li0.015)(Nb0.98V0.02)O3 + x MnO2 (x = 0, and 0.01 wt. %) ceramic compositions were synthesized by conventional ceramic processing route. X-ray diffraction study reveals that both the undoped and Mn4+-doped ceramic samples prepared crystallize into a perovskite structure having orthorhombic symmetry. Dielectric study indicates that Mn4+ doping has little effect on both the Curie temperature (Tc) and tetragonal-orthorhombic phase transition temperature (Tot). The bulk density, room-temperature dielectric constant (εRT), and room-c The room-temperature coercive field (Ec) is observed to be lower in Mn4+ doped sample. The detailed analysis of the P-E hysteresis loops over the range of temperature from about room temperature to Tot points out that enhanced ferroelectric properties exist in this temperature range with better thermal stability for the Mn4+ doped ceramic. The study reveals that small traces of Mn4+ can modify (K0.485Na0.5Li0.015)(Nb0.98V0.02)O3 system so as to improve its ferroelectric properties with good thermal stability over a wide range of temperature.

Keywords: Ceramics, dielectric properties, ferroelectric properties, lead-free, sintering, thermal stability.

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39 Oxygen-Interstitials and Group-V Element Doping for p-Type ZnO

Authors: A. M. Gsiea, J. P. Goss, P. R. Briddon, K. M. Etmimi

Abstract:

In realizing devices using ZnO, a key challenge is the production of p-type material. Substitution of oxygen by a group-V impurity is thought to result in deep acceptor levels, but a candidate made up from a complex of a group-V impurity (P, As, Sb) on a Zn site coupled with two vacant Zn sites is widely viewed as a candidate. We show using density-functional simulations that in contrast to such a view, complexes involving oxygen interstitials are energetically more favorable, resulting in group-V impurities coordinated with four, five or six oxygen atoms.

Keywords: DFT, Oxygen, p-Type, ZnO.

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38 The Efficiency of Irrigation System and Nitrogen Fixation for inoculated Soybeans by using N15 Tracer Techniques

Authors: Hisham Nuri Akrim, Abubaker Edkymish, Nissreen Gryani

Abstract:

Repeated additions of the unfertilized bacteria led to increase the activity of Nitrogen-fixing bacteria in the root zone with drip irrigation system compared to traditional manual vaccination to increase the proportion of Nitrogen from 29% to 64%, and the efficiency of adding Nitrogen fertilizer did not exceed 9.5% while dropped to 4%, due to the amount of fertilizer added was not exceed 20kg N/h, and the second was the existence of a large amount of available Nitrogen in the soil by fixation, while the efficiency of irrigation system between 2.08 to 2.26 kg/m3.

Keywords: Drip irrigation system, Nitrogen Biological Fixation, Neutron Probe, N-15 Tracer Techniques

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37 Design Optimization of the Primary Containment Building of a Pressurized Water Reactor

Authors: M. Hossain, A. H. Khan, M. A. R. Sarkar

Abstract:

Primary containment structure is one of the five safety layers of a nuclear facility which is needed to be designed in such a manner that it can withstand the pressure and excessive radioactivity during accidental situations. It is also necessary to ensure minimization of cost with maximum possible safety in order to make the design economically feasible and attractive. This paper attempts to identify the optimum design conditions for primary containment structure considering both mechanical and radiation safety keeping the economic aspects in mind. This work takes advantage of commercial simulation software to identify the suitable conditions without the requirement of costly experiments. Generated data may be helpful for further studies.

Keywords: PWR, concrete containment, finite element approach, neutron attenuation, Von Mises Stress.

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36 Computer Software for Calculating Electron Mobility of Semiconductors Compounds; Case Study for N-Gan

Authors: Emad A. Ahmed

Abstract:

Computer software to calculate electron mobility with respect to different scattering mechanism has been developed. This software is adopted completely Graphical User Interface (GUI) technique and its interface has been designed by Microsoft Visual basic 6.0. As a case study the electron mobility of n-GaN was performed using this software. The behavior of the mobility for n-GaN due to elastic scattering processes and its relation to temperature and doping concentration were discussed. The results agree with other available theoretical and experimental data.

Keywords: Electron mobility, relaxation time, GaN, Scattering, Computer software, computation physics.

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35 Online Measurement of Fuel Stack Elongation

Authors: Sung Ho Ahn, Jintae Hong, Chang Young Joung, Tae Ho Yang, Sung Ho Heo, Seo Yun Jang

Abstract:

The performances of nuclear fuels and materials are qualified at an irradiation system in research reactors operating under the commercial nuclear power plant conditions. Fuel centerline temperature, coolant temperature, neutron flux, deformations of fuel stack and swelling are important parameters needed to analyze the nuclear fuel performances. The dimensional stability of nuclear fuels is a key parameter measuring the fuel densification and swelling. In this study, the fuel stack elongation is measured using a LVDT. A mockup LVDT instrumented fuel rod is developed. The performances of mockup LVDT instrumented fuel rod is evaluated by experiments.

Keywords: Axial deformation, elongation measurement, in-pile instrumentation, LVDT.

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34 Gamma Irradiation Effects on the Magnetic Properties of Hard Ferrites

Authors: F. Abbas Pour Khotbehsara, B. Salehpour, A. Kianvash

Abstract:

Many industrial materials like magnets need to be tested for the radiation environment expected at linear colliders (LC) where the accelerator and detectors will be subjected to large influences of beta, neutron and gamma’s over their life Gamma irradiation of the permanent sample magnets using a 60Co source was investigated up to an absorbed dose of 700Mrad shows a negligible effect on some magnetic properties of Nd-Fe-B. In this work it has been tried to investigate the change of some important properties of Barium hexa ferrite. Results showed little decreases of magnetic properties at doses rang of 0.5 to 2.5 Mrad. But at the gamma irradiation dose up to 10 Mrad it is showed a few increase of properties. Also study of gamma irradiation of Nd-Fe-B showed considerably increase of magnetic properties.

Keywords: Gamma ray irradiation, Hard Ferrite, Magnetic coefficient, Radiation dose.

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33 A Parallel Algorithm for 2-D Cylindrical Geometry Transport Equation with Interface Corrections

Authors: Wei Jun-xia, Yuan Guang-wei, Yang Shu-lin, Shen Wei-dong

Abstract:

In order to make conventional implicit algorithm to be applicable in large scale parallel computers , an interface prediction and correction of discontinuous finite element method is presented to solve time-dependent neutron transport equations under 2-D cylindrical geometry. Domain decomposition is adopted in the computational domain.The numerical experiments show that our parallel algorithm with explicit prediction and implicit correction has good precision, parallelism and simplicity. Especially, it can reach perfect speedup even on hundreds of processors for large-scale problems.

Keywords: Transport Equation, Discontinuous Finite Element, Domain Decomposition, Interface Prediction And Correction

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32 Impact of Process Variations on the Vertical Silicon Nanowire Tunneling FET (TFET)

Authors: Z. X. Chen, T. S. Phua, X. P. Wang, G. -Q. Lo, D. -L. Kwong

Abstract:

This paper presents device simulations on the vertical silicon nanowire tunneling FET (VSiNW TFET). Simulations show that a narrow nanowire and thin gate oxide is required for good performance, which is expected even for conventional MOSFETs. The gate length also needs to be more than the nanowire diameter to prevent short channel effects. An effect more unique to TFET is the need for abrupt source to channel junction, which is shown to improve the performance. The ambipolar effect suppression by reducing drain doping concentration is also explored and shown to have little or no effect on performance.

Keywords: Device simulation, MEDICI, tunneling FET (TFET), vertical silicon nanowire.

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31 Characterization of the In0.53Ga0.47As n+nn+ Photodetectors

Authors: Fatima Zohra Mahi, Luca Varani

Abstract:

We present an analytical model for the calculation of the sensitivity, the spectral current noise and the detective parameter for an optically illuminated In0.53Ga0.47As n+nn+ diode. The photocurrent due to the excess carrier is obtained by solving the continuity equation. Moreover, the current noise level is evaluated at room temperature and under a constant voltage applied between the diode terminals. The analytical calculation of the current noise in the n+nn+ structure is developed by considering the free carries fluctuations. The responsivity and the detection parameter are discussed as functions of the doping concentrations and the emitter layer thickness in one-dimensional homogeneous n+nn+ structure.

Keywords: Responsivity, detection parameter, photo-detectors, continuity equation, current noise.

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30 Seismic Inversion to Improve the Reservoir Characterization: Case Study in Central Blue Nile Basin - Sudan

Authors: S. E. Musa, N. E. Mohamed, N. A. Ahmed

Abstract:

In this study, several crossplots of the P-impedance with the lithology logs (gamma ray, neutron porosity, deep resistivity, water saturation and Vp/Vs curves) were made in three available wells, which were drilled in central part of the Blue Nile basin in depths varies from 1460m to 1600m. These crossplots were successful to discriminate between sand and shale when using PImpedance values, and between the wet sand and the pay sand when using both P-impedance and Vp/Vs together. Also some impedance sections were converted to porosity sections using linear formula to characterize the reservoir in terms of porosity. The used crossplots were created on log resolution, while the seismic resolution can identify only the reservoir, unless a 3D seismic angle stacks were available; then it would be easier to identify the pay sand with great confidence; through high resolution seismic inversion and geostatistical approach when using P-impedance and Vp/Vs volumes.

Keywords: Basin, Blue Nile, Inversion, Seismic.

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29 Screened Potential in a Reverse Monte Carlo (RMC) Simulation

Authors: M. Habchi, S. M. Mesli, M. Kotbi

Abstract:

A structural study of an aqueous electrolyte whose experimental results are available. It is a solution of LiCl-6H2O type at glassy state (120K) contrasted with pure water at room temperature by means of Partial Distribution Functions (PDF) issue from neutron scattering technique. Based on these partial functions, the Reverse Monte Carlo method (RMC) computes radial and angular correlation functions which allow exploring a number of structural features of the system. The obtained curves include some artifacts. To remedy this, we propose to introduce a screened potential as an additional constraint. Obtained results show a good matching between experimental and computed functions and a significant improvement in PDFs curves with potential constraint. It suggests an efficient fit of pair distribution functions curves.

Keywords: RMC simulation; Screened potential; partial and pair distribution functions; glassy and liquid state

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28 Monte Carlo Simulation of the Transport Phenomena in Degenerate Hg0.8Cd0.2Te

Authors: N. Dahbi, M. Daoudi, A.Belghachi

Abstract:

The present work deals with the calculation of transport properties of Hg0.8Cd0.2Te (MCT) semiconductor in degenerate case. Due to their energy-band structure, this material becomes degenerate at moderate doping densities, which are around 1015 cm-3, so that the usual Maxwell-Boltzmann approximation is inaccurate in the determination of transport parameters. This problem is faced by using Fermi-Dirac (F-D) statistics, and the non-parabolic behavior of the bands may be approximated by the Kane model. The Monte Carlo (MC) simulation is used here to determinate transport parameters: drift velocity, mean energy and drift mobility versus electric field and the doped densities. The obtained results are in good agreement with those extracted from literature.

Keywords: degeneracy case, Hg0.8Cd0.2Te semiconductor, Monte Carlo simulation, transport parameters.

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