WASET
	@article{(Open Science Index):https://publications.waset.org/pdf/12190,
	  title     = {Doping Profile Measurement and Characterization by Scanning Capacitance Microscope for PocketImplanted Nano Scale n-MOSFET},
	  author    = {Muhibul Haque Bhuyan and  Farseem Mannan Mohammedy and Quazi Deen Mohd Khosru},
	  country	= {},
	  institution	= {},
	  abstract     = {This paper presents the doping profile measurement
and characterization technique for the pocket implanted nano scale
n-MOSFET. Scanning capacitance microscopy and atomic force
microscopy have been used to image the extent of lateral dopant
diffusion in MOS structures. The data are capacitance vs. voltage
measurements made on a nano scale device. The technique is nondestructive
when imaging uncleaved samples. Experimental data from
the published literature are presented here on actual, cleaved device
structures which clearly indicate the two-dimensional dopant profile
in terms of a spatially varying modulated capacitance signal. Firstorder
deconvolution indicates the technique has much promise for
the quantitative characterization of lateral dopant profiles. The pocket
profile is modeled assuming the linear pocket profiles at the source
and drain edges. From the model, the effective doping concentration
is found to use in modeling and simulation results of the various
parameters of the pocket implanted nano scale n-MOSFET. The
potential of the technique to characterize important device related
phenomena on a local scale is also discussed.},
	    journal   = {International Journal of Electronics and Communication Engineering},
	  volume    = {5},
	  number    = {8},
	  year      = {2011},
	  pages     = {1082 - 1089},
	  ee        = {https://publications.waset.org/pdf/12190},
	  url   	= {https://publications.waset.org/vol/56},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 56, 2011},
	}