**Commenced**in January 2007

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**Edition:**International

**Paper Count:**30835

##### Doping Profile Measurement and Characterization by Scanning Capacitance Microscope for PocketImplanted Nano Scale n-MOSFET

**Authors:**
Muhibul Haque Bhuyan,
Quazi Deen Mohd Khosru,
Farseem Mannan Mohammedy

**Abstract:**

**Keywords:**
atomic force microscope,
Linear pocket profile,
Pocket Implanted n-MOSFET,
Scanning Capacitance Microscope

**Digital Object Identifier (DOI):**
doi.org/10.5281/zenodo.1078727

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[24] M. H. Bhuyan and Q. D. M. Khosru, "Linear pocket profile based threshold voltage model for sub-100 nm n-MOSFET incorporating substrate and drain bias effects," in Proc. of the 5th International Conference on Electrical and Computer Engineering (ICECE 2008), 20-22 December 2008, Dhaka, Bangladesh, pp. 447-451.

[25] M. H. Bhuyan and Q. D. M. Khosru, "Linear profile based analytical surface potential model for pocket implanted sub-100 nm n-MOSFET," Journal of Electron Devices, France, ISSN 1682-3427, vol. 7, 2010, pp 235-240.

[26] M. H. Bhuyan and Q. D. M. Khosru, "Inversion layer effective mobility model for pocket implanted nano scale n-MOSFET," International Journal of Electrical and Electronics Engineering, ISSN 2010-3972, vol. 5, no. 1, Januay 2011, pp. 50-57.

[27] Muhibul Haque Bhuyan and Q. D. M. Khosru, "An Analytical Subthreshold Drain Current Model for Pocket Implanted Nano Scale n- MOSFET," Journal of Electron Devices, France, ISSN 1682-3427, vol. 8, October 2010, pp. 263-267.

[28] M. H. Bhuyan and Q. D. M. Khosru, "Low frequency drain current flicker noise model for pocket implanted nano scale n-MOSFET," in Proc. of the IEEE Nanotechnology Materials and Devices Conference (NMDC 2010), 12-15 October 2010, California, USA, pp. 295-299.