{"title":"Monte Carlo Simulation of the Transport Phenomena in Degenerate Hg0.8Cd0.2Te","authors":"N. Dahbi, M. Daoudi, A.Belghachi","country":null,"institution":"","volume":55,"journal":"International Journal of Mathematical and Computational Sciences","pagesStart":950,"pagesEnd":954,"ISSN":"1307-6892","URL":"https:\/\/publications.waset.org\/pdf\/1860","abstract":"The present work deals with the calculation of\r\ntransport properties of Hg0.8Cd0.2Te (MCT) semiconductor in\r\ndegenerate case. Due to their energy-band structure, this material\r\nbecomes degenerate at moderate doping densities, which are around\r\n1015 cm-3, so that the usual Maxwell-Boltzmann approximation is\r\ninaccurate in the determination of transport parameters. This problem\r\nis faced by using Fermi-Dirac (F-D) statistics, and the non-parabolic\r\nbehavior of the bands may be approximated by the Kane model. The\r\nMonte Carlo (MC) simulation is used here to determinate transport\r\nparameters: drift velocity, mean energy and drift mobility versus\r\nelectric field and the doped densities. The obtained results are in\r\ngood agreement with those extracted from literature.","references":null,"publisher":"World Academy of Science, Engineering and Technology","index":"Open Science Index 55, 2011"}