@article{(Open Science Index):https://publications.waset.org/pdf/10922,
	  title     = {Oxygen-Interstitials and Group-V Element Doping for p-Type ZnO},
	  author    = {A. M. Gsiea and  J. P. Goss and  P. R. Briddon and  K. M. Etmimi},
	  country	= {},
	  institution	= {},
	  abstract     = {In realizing devices using ZnO, a key challenge is the
production of p-type material. Substitution of oxygen by a group-V
impurity is thought to result in deep acceptor levels, but a candidate
made up from a complex of a group-V impurity (P, As, Sb) on a Zn
site coupled with two vacant Zn sites is widely viewed as a candidate.
We show using density-functional simulations that in contrast to such
a view, complexes involving oxygen interstitials are energetically
more favorable, resulting in group-V impurities coordinated with four,
five or six oxygen atoms.},
	    journal   = {International Journal of Physical and Mathematical Sciences},
	  volume    = {7},
	  number    = {3},
	  year      = {2013},
	  pages     = {370 - 378},
	  ee        = {https://publications.waset.org/pdf/10922},
	  url   	= {https://publications.waset.org/vol/75},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 75, 2013},
	}