@article{(Open Science Index):https://publications.waset.org/pdf/1860,
	  title     = {Monte Carlo Simulation of the Transport Phenomena in Degenerate Hg0.8Cd0.2Te},
	  author    = {N. Dahbi and  M. Daoudi and  A.Belghachi},
	  country	= {},
	  institution	= {},
	  abstract     = {The present work deals with the calculation of
transport properties of Hg0.8Cd0.2Te (MCT) semiconductor in
degenerate case. Due to their energy-band structure, this material
becomes degenerate at moderate doping densities, which are around
1015 cm-3, so that the usual Maxwell-Boltzmann approximation is
inaccurate in the determination of transport parameters. This problem
is faced by using Fermi-Dirac (F-D) statistics, and the non-parabolic
behavior of the bands may be approximated by the Kane model. The
Monte Carlo (MC) simulation is used here to determinate transport
parameters: drift velocity, mean energy and drift mobility versus
electric field and the doped densities. The obtained results are in
good agreement with those extracted from literature.},
	    journal   = {International Journal of Mathematical and Computational Sciences},
	  volume    = {5},
	  number    = {7},
	  year      = {2011},
	  pages     = {950 - 953},
	  ee        = {https://publications.waset.org/pdf/1860},
	  url   	= {https://publications.waset.org/vol/55},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 55, 2011},