@article{(Open Science Index):https://publications.waset.org/pdf/1860, title = {Monte Carlo Simulation of the Transport Phenomena in Degenerate Hg0.8Cd0.2Te}, author = {N. Dahbi and M. Daoudi and A.Belghachi}, country = {}, institution = {}, abstract = {The present work deals with the calculation of transport properties of Hg0.8Cd0.2Te (MCT) semiconductor in degenerate case. Due to their energy-band structure, this material becomes degenerate at moderate doping densities, which are around 1015 cm-3, so that the usual Maxwell-Boltzmann approximation is inaccurate in the determination of transport parameters. This problem is faced by using Fermi-Dirac (F-D) statistics, and the non-parabolic behavior of the bands may be approximated by the Kane model. The Monte Carlo (MC) simulation is used here to determinate transport parameters: drift velocity, mean energy and drift mobility versus electric field and the doped densities. The obtained results are in good agreement with those extracted from literature.}, journal = {International Journal of Mathematical and Computational Sciences}, volume = {5}, number = {7}, year = {2011}, pages = {950 - 953}, ee = {https://publications.waset.org/pdf/1860}, url = {https://publications.waset.org/vol/55}, bibsource = {https://publications.waset.org/}, issn = {eISSN: 1307-6892}, publisher = {World Academy of Science, Engineering and Technology}, index = {Open Science Index 55, 2011}, }