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Saturated Gain of Doped Multilayer Quantum Dot Semiconductor Optical Amplifiers
Authors: Omar Qasaimeh
Abstract:The effect of the number of quantum dot (QD) layers on the saturated gain of doped QD semiconductor optical amplifiers (SOAs) has been studied using multi-population coupled rate equations. The developed model takes into account the effect of carrier coupling between adjacent layers. It has been found that increasing the number of QD layers (K) increases the unsaturated optical gain for K<8 and approximately has no effect on the unsaturated gain for K ≥ 8. Our analysis shows that the optimum ptype concentration that maximizes the unsaturated optical gain of the ground state is NA Ôëê 0.75 ×1018cm-3 . On the other hand, it has been found that the saturated optical gain for both the ground state and the excited state are strong function of both the doping concentration and K where we find that it is required to dope the dots with n-type concentration for very large K at high photon energy.
Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1056795Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1520
 Li Jiang and Levon V. Asryan," Excited-State-Mediated Capture of Carriers Into the Ground State and the Saturation of Optical Power in Quantum-Dot Lasers," IEEE Photonics Tech. Lett., vol. 18, no. 24, pp. 2611-2613, 2006.
 H. C. Wong, G. B. Ren, and J. M. Rorison, "The Constraints on Quantum-Dot Semiconductor Optical Amplifiers for Multichannel Amplification, "IEEE Photonics Tech. Lett., vol. 18, no. 20, pp. 2075- 2077, 2006.
 Jungho Kim and Shun Lien Chuang, "Theoretical and Experimental Study of Optical Gain, Refractive Index Change, and Linewidth Enhancement Factor of p-Doped Quantum-Dot Lasers," IEEE J. Quantum Electron, vol. 42, no. 9, pp. 942-952, 2006.
 S. Schneider, P. Borri, W. Langbein, U. Woggon, R. Sellin, D. Ouyang, D. Bimberg, "Excited-state gain dynamics in InGaAs quantum-dot amplifiers", IEEE Photonics Tech. Lett., vol. 17, no. 10, pp. 2014- 2016, 2005.
 A. Salhi, L. Martiradonna, G. Visimberga, V. Tasco, L. Fortunato, M. T. Todaro, R. Cingolani, A. Passaseo, and M. De Vittorio," High-Modal Gain 1300-nm In(Ga)As-GaAs Quantum-Dot Lasers," IEEE Photonics Tech. Lett., vol. 18, no. 16, pp. 1735-1737, 2006.
 T. Akiyama, H. Kuwatsuka, N. Hatori, Y. Nakata, H. Ebe and M. Sugawara," Symmetric highly efficient (~0 dB) wavelength conversion based on four-wave mixing in quantum dot optical amplifiers," IEEE Photonics Tech. Lett., vol. 14, no. 8, pp. 1139-1141, 2002.
 M. Van der Poel, E. Gehrig, O. Hess, D. Birkedal, J. Hvam, "Ultrafast Gain Dynamics in Quantum-Dot Amplifiers: Theoretical Analysis and Experimental Investigations" IEEE J. Quantum Electron, vol. 41, no. 9, pp. 1115-1123, 2005.
 O. Qasaimeh, "Ultra-Fast Gain Recovery and Compression Due to Auger-Assisted Relaxation in Quantum Dot Semiconductor Optical Amplifiers" IEEE J. Lightwave Technology, vol. 27, no. 13, pp. 2530- 2536, 2009.
 Ryan R. Alexander, David T. D. Childs, Harsh Agarwal, Kristian M. Groom, Hui-Yun Liu, Mark Hopkinson, Richard A. Hogg, Mitsuru Ishida, Tsuyoshi Yamamoto, Mitsuru Sugawara, Yasuhiko Arakawa, Tom J. Badcock, Richard J. Royce, and David J. Mowbray, "Systematic Study of the Effects of Modulation p-Doping on 1.3-╬╝m Quantum-Dot Lasers," IEEE J. Quantum Electron, vol. 43, no. 12, pp. 1129-1139, 2007.
 T. Chen, Y. F. Chen, J. S. Wang, Y. S. Huang, R. S. Hsiao, J. F. Chen, C. M. Lai and J. Y. Chi," Wire-like characteristics in stacked InAs/GaAs quantum dot superlattices for optoelectronic devices," Semicond. Sci. Technol. vol. 22, pp. 1077-1080, 2007.
 Omar Qasaimeh," Effect of Doping on the Optical Characteristics of Quantum Dot Semiconductor Optical Amplifiers" IEEE J. Lightwave Tech, vol. 27, no. 12, pp.1978-1984, 2009.
 T. Amano, S. Aoki, T. Sugaya, Kazuhiro Komori, and Y. Okada, "Laser Characteristics of 1.3-╬╝m Quantum Dots Laser With High-Density Quantum Dots," IEEE J. Of Selected Topics in Quantum Electrons, vol. 13, no. 5, pp. 1273-1278, 2007.
 Jyh-Shyang Wang, Ru-Shang Hsiao, Jenn-Fang Chen, Chu-Shou Yang, Gray Lin, Chiu-Yueh Liang, Chih-Ming Lai, Hui-Yu Liu, Tung-Wei Chi, and Jim-Y. Chi," Engineering Laser Gain Spectrum Using Electronic Vertically Coupled InAs-GaAs Quantum Dots," IEEE Photonics Tech. Lett., vol. 17, no. 8, pp. 1590-1592, 2005.
 O. Qasaimeh, "Vertical Coupling in Multiple Stacks Quantum Dot Semiconductor Optical Amplifiers" Journal of Physics D: Applied Science, vol. 42, pp. 234001, 2009.
 Ian. C. Sandall, Peter M. Smowton, Hui-Yun Liu, and Mark Hopkinson," Nonradiative Recombination in Multiple Layer In(Ga)As Quantum-Dot Lasers," IEEE J. Quantum Electron, vol. 43, no. 8, pp. 698-703, 2007.
 C. L. Walker, I. C. Sandall, P. M. Smowton, I. R. Sellers, D. J. Mowbray, H. Y. Liu, and M. Hopkinson," The Role of High Growth Temperature GaAs Spacer Layers in 1.3-╬╝m In(Ga)As Quantum-Dot Lasers," IEEE Photonics Tech. Lett., vol. 17, no. 10, pp. 2011-2013, 2005.