%0 Journal Article
	%A A. M. Gsiea and  J. P. Goss and  P. R. Briddon and  K. M. Etmimi
	%D 2013
	%J International Journal of Physical and Mathematical Sciences
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 75, 2013
	%T Oxygen-Interstitials and Group-V Element Doping for p-Type ZnO
	%U https://publications.waset.org/pdf/10922
	%V 75
	%X In realizing devices using ZnO, a key challenge is the
production of p-type material. Substitution of oxygen by a group-V
impurity is thought to result in deep acceptor levels, but a candidate
made up from a complex of a group-V impurity (P, As, Sb) on a Zn
site coupled with two vacant Zn sites is widely viewed as a candidate.
We show using density-functional simulations that in contrast to such
a view, complexes involving oxygen interstitials are energetically
more favorable, resulting in group-V impurities coordinated with four,
five or six oxygen atoms.
	%P 370 - 378