Search results for: Heterostructure nanowires
26 Synthesis and Applications of Heteronanostructured ZnO Nanowires Array
Authors: Minsu Seol, Youngjo Tak, Guenjai Kwak, Kijung Yong
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ZnO heteronanostructured nanowires arrays have been fabricated by low temperature solution method. Various heterostructures were synthesized including CdS/ZnO, CdSe/CdS/ZnO nanowires and Co3O4/ZnO, ZnO/SiC nanowires. These multifunctional heterostructure nanowires showed important applications in photocatalysts, sensors, wettability control and solar energy conversion.Keywords: ZnO nanowires, Heterostructure nanowires, solarenergy conversion, photocatalsis.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 211625 High Optical Properties and Rectifying Behavior of ZnO (Nano and Microstructures)/Si Heterostructures
Authors: Ramin Yousefi, Muhamad. Rasat. Muhamad
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We investigated a modified thermal evaporation method in the growth process of ZnO nanowires. ZnO nanowires were fabricated on p-type silicon substrates without using a metal catalyst. A simple horizontal double-tube system along with chemical vapor diffusion of the precursor was used to grow the ZnO nanowires. The substrates were placed in different temperature zones, and ZnO nanowires with different diameters were obtained for the different substrate temperatures. In addition to the nanowires, ZnO microdiscs with different diameters were obtained on another substrate, which was placed at a lower temperature than the other substrates. The optical properties and crystalline quality of the ZnO nanowires and microdiscs were characterized by room temperature photoluminescence (PL) and Raman spectrometers. The PL and Raman studies demonstrated that the ZnO nanowires and microdiscs grown using such set-up had good crystallinity with excellent optical properties. Rectifying behavior of ZnO/Si heterostructures was characterized by a simple DC circuit.Keywords: ZnO nano and microstructures, Photoluminescence, Raman, Rectifying behavior.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 191924 Bio-Electrochemical Process Coupled with MnO2 Nanowires for Wastewater Treatment
Authors: A. Giwa, S. M. Jung, W. Fang, J. Kong, S. W. Hasan
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MnO2 nanowires were developed as filtration media for wastewater treatment that uniquely combines several advantages. The resulting material demonstrated strong capability to remove the pollution of heavy metal ions and organic contents in water. In addition, the manufacture process of such material is practical and economical. In this work, MnO2 nanowires were integrated with the state-of-art bio-electrochemical system for wastewater treatment, to overcome problems currently encountered with organic, inorganic, heavy metal, and microbe removal, and to minimize the unit footprint (land/space occupation) at low cost. Results showed that coupling the bio-electrochemical with MnO2 resulted in very encouraging results with higher removal efficiencies of such pollutants.
Keywords: Bio-electrochemical, nanowires, wastewater, treatment.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 127223 TiO2 Nanowires as Efficient Heterogeneous Photocatalysts for Waste-Water Treatment
Authors: Gul Afreen, Sreedevi Upadhyayula, Mahendra K. Sunkara
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One-dimensional (1D) nanostructures like nanowires, nanotubes, and nanorods find variety of practical application owing to their unique physico-chemical properties. In this work, TiO2 nanowires were synthesized by direct oxidation of titanium particles in a unique microwave plasma jet reactor. The prepared TiO2 nanowires manifested the flexible features, and were characterized by using X-ray diffraction, Brunauer-Emmett-Teller (BET) surface area analyzer, UV-Visible and FTIR spectrophotometers, Scanning electron microscope, and Transmission electron microscope. Further, the photodegradation efficiency of these nanowires were tested against toxic organic dye like methylene blue (MB) and the results were compared with the commercial TiO2. It was found that TiO2 nanowires exhibited superior photocatalytic performance (89%) as compared to commercial TiO2 (75%) after 60 min of reaction. This is attributed to the lower recombination rate and increased interfacial charge transfer in TiO2 nanowire. Pseudo-first order kinetic modelling performed with the experimental results revealed that the rate constant of photodegradation in case of TiO2 nanowire was 1.3 times higher than that of commercial TiO2. Superoxide radical (O2˙−) was found to be the major contributor in the photodegradation mechanism. Based on the trapping experiments, a plausible mechanism of the photocatalytic reaction is discussed.
Keywords: Heterogeneous catalysis, photodegradation, reactive oxygen species, TiO2 nanowires.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 89522 Structure and Morphology of Electrodeposited Nickel Nanowires at an Electrode Distance of 20mm
Authors: Mahendran Samykano, Ram Mohan, Shyam Aravamudhan
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The objective of this work is to study the effect of two key factors - external magnetic field and applied current density during template-based electrodeposition of nickel nanowires using an electrode distance of 20 mm. Morphology, length, crystallite size and crystallographic characterization of the grown nickel nanowires at an electrode distance of 20mm are presented. For this electrode distance of 20 mm, these two key electrodeposition factors when coupled was found to reduce crystallite size with a higher growth length and preferred orientation of Ni crystals. These observed changes can be inferred to be due to coupled interaction forces induced by the intensity of applied electric field (current density) and external magnetic field known as magnetohydrodynamic (MHD) effect during the electrodeposition process.
Keywords: Anodic alumina oxide, electrodeposition, nanowires, nickel.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 219521 Facile Synthesis of Vertically Aligned ZnO Nanowires on Carbon Layer by Vapour Deposition
Authors: Kh. A. Abdullin, N. B. Bakranov, S. E. Kudaibergenov, S.E. Kumekov, V. N. Ermolaev, L. V. Podrezova
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A facile vapour deposition method of synthesis of vertically aligned ZnO nanowires on carbon seed layer was developed. The received samples were investigated on electronic microscope JSM-6490 LA JEOL and x-ray diffractometer X, pert MPD PRO. The photoluminescence spectra (PL) of obtained ZnO samples at a room temperature were studied using He-Cd laser (325 nm line) as excitation source.
Keywords: ZnO nanowires, vapor-phase deposition, Nicatalytic layer, facile method of synthesis, carbon catalytic layer, thephotoluminescence spectra, X-ray spectrum.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 145320 Design an Electrical Nose with ZnO Nanowire Arrays
Authors: Amin Nekoubin, Abdolamir Nekoubin
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Vertical ZnO nanowire array films were synthesized based on aqueous method for sensing applications. ZnO nanowires were investigated structurally using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The gas-sensing properties of ZnO nanowires array films are studied. It is found that the ZnO nanowires array film sensor exhibits excellent sensing properties towards O2 and CO2 at 100 °C with the response time shorter than 5 s. High surface area / volume ratio of vertical ZnO nanowire and high mobility accounts for the fast response and recovery. The sensor response was measured in the range from 100 to 500 ppm O2 and CO2 in this study.Keywords: Gas sensor, semiconductor, ZnO, Nanowire array
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 155819 Graphene/h-BN Heterostructure Interconnects
Authors: Nikhil Jain, Yang Xu, Bin Yu
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The material behavior of graphene, a single layer of carbon lattice, is extremely sensitive to its dielectric environment. We demonstrate improvement in electronic performance of graphene nanowire interconnects with full encapsulation by lattice-matching, chemically inert, 2D layered insulator hexagonal boron nitride (h- BN). A novel layer-based transfer technique is developed to construct the h-BN/MLG/h-BN heterostructures. The encapsulated graphene wires are characterized and compared with that on SiO2 or h-BN substrate without passivating h-BN layer. Significant improvements in maximum current-carrying density, breakdown threshold, and power density in encapsulated graphene wires are observed. These critical improvements are achieved without compromising the carrier transport characteristics in graphene. Furthermore, graphene wires exhibit electrical behavior less insensitive to ambient conditions, as compared with the non-passivated ones. Overall, h-BN/graphene/h- BN heterostructure presents a robust material platform towards the implementation of high-speed carbon-based interconnects.Keywords: Two-dimensional nanosheet, graphene, hexagonal boron nitride, heterostructure, interconnects.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 169418 Surface and Bulk Magnetization Behavior of Isolated Ferromagnetic NiFe Nanowires
Authors: Musaab Salman Sultan
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The surface and bulk magnetization behavior of template released isolated ferromagnetic Ni60Fe40 nanowires of relatively thick diameters (~200 nm), deposited from a dilute suspension onto pre-patterned insulating chips have been investigated experimentally, using a highly sensitive Magneto-Optical Ker Effect (MOKE) magnetometry and Magneto-Resistance (MR) measurements, respectively. The MR data were consistent with the theoretical predictions of the anisotropic magneto-resistance (AMR) effect. The MR measurements, in all the angles of investigations, showed large features and a series of nonmonotonic "continuous small features" in the resistance profiles. The extracted switching fields from these features and from MOKE loops were compared with each other and with the switching fields reported in the literature that adopted the same analytical techniques on the similar compositions and dimensions of nanowires. A large difference between MOKE and MR measurments was noticed. The disparate between MOKE and MR results is attributed to the variance in the micro-magnetic structure of the surface and the bulk of such ferromagnetic nanowires. This result was ascertained using micro-magnetic simulations on an individual: cylindrical and rectangular cross sections NiFe nanowires, with the same diameter/thickness of the experimental wires, using the Object Oriented Micro-magnetic Framework (OOMMF) package where the simulated loops showed different switching events, indicating that such wires have different magnetic states in the reversal process and the micro-magnetic spin structures during switching behavior was complicated. These results further supported the difference between surface and bulk magnetization behavior in these nanowires. This work suggests that a combination of MOKE and MR measurements is required to fully understand the magnetization behavior of such relatively thick isolated cylindrical ferromagnetic nanowires.
Keywords: MOKE magnetometry, MR measurements, OOMMF package, micro-magnetic simulations, ferromagnetic nanowires, surface magnetic properties.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 76317 Size Dependence of 1D Superconductivity in NbN Nanowires on Suspended Carbon Nanotubes
Authors: T. Hashimoto, N. Miki, H. Maki
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We report the size dependence of 1D superconductivity in ultrathin (10-130 nm) nanowires produced by coating suspended carbon nanotubes with a superconducting NbN thin film. The resistance-temperature characteristic curves for samples with ≧25 nm wire width show the superconducting transition. On the other hand, for the samples with 10-nm width, the superconducting transition is not exhibited owing to the quantum size effect. The differential resistance vs. current density characteristic curves show some peak, indicating that Josephson junctions are formed in nanowires. The presence of the Josephson junctions is well explained by the measurement of the magnetic field dependence of the critical current. These understanding allow for the further expansion of the potential application of NbN, which is utilized for single photon detectors and so on.
Keywords: NbN nanowire, carbon nanotube, quantum size effect, Josephson junction
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 205416 Modeling Nanomechanical Behavior of ZnO Nanowires as a Function of Nano-Diameter
Authors: L. Achou, A. Doghmane
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Elastic performances, as an essential property of nanowires (NWs), play a significant role in the design and fabrication of modern nanodevices. In this paper, our interest is focused on ZnO NWs to investigate wire diameter (Dwire ≤ 400 nm) effects on elastic properties. The plotted data reveal that a strong size dependence of the elastic constants exists when the wire diameter is smaller than ~ 100 nm. For larger diameters (Dwire > 100 nm), these ones approach their corresponding bulk values. To enrich this study, we make use of the scanning acoustic microscopy simulation technique. The calculation methodology consists of several steps: determination of longitudinal and transverse wave velocities, calculation of refection coefficients, calculation of acoustic signatures and Rayleigh velocity determination. Quantitatively, it was found that changes in ZnO diameters over the ranges 1 nm ≤ Dwire ≤ 100 nm lead to similar exponential variations, for all elastic parameters, of the from: A = a + b exp(-Dwire/c) where a, b, and c are characteristic constants of a given parameter. The developed relation can be used to predict elastic properties of such NW by just knowing its diameter and vice versa.Keywords: Elastic properties, nanowires, semiconductors, ZnO.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 97615 Ultrafast Transistor Laser Containing Graded Index Separate Confinement Heterostructure
Authors: Mohammad Hosseini
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Ultrafast transistor laser investigated here has the graded index separate confinement heterostructure (GRIN-SCH) in its base region. Resonance-free optical frequency response with -3 dB bandwidth of more than 26 GHz has been achieved for a single quantum well transistor laser by using graded index layers of AlξGa1-ξAs (ξ: 0.1→0) in the left side of quantum well and AlξGa1-ξAs (ξ: 0.05→0) in the right side of quantum well. All required parameters, including quantum well and base transit time, optical confinement factor and spontaneous recombination lifetime, have been calculated using a self-consistent charge control model.
Keywords: Transistor laser, ultrafast, GRIN-SCH, -3db optical bandwidth, AlξGa1-ξAs.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 17414 Patterned Growth of ZnO Nanowire Arrays on Zinc Foil by Thermal Oxidation
Authors: Farid Jamali Sheini, Dilip S. Joag, Mahendra A. More
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A simple approach is demonstrated for growing large scale, nearly vertically aligned ZnO nanowire arrays by thermal oxidation method. To reveal effect of temperature on growth and physical properties of the ZnO nanowires, gold coated zinc substrates were annealed at 300 °C and 400 °C for 4 hours duration in air. Xray diffraction patterns of annealed samples indicated a set of well defined diffraction peaks, indexed to the wurtzite hexagonal phase of ZnO. The scanning electron microscopy studies show formation of ZnO nanowires having length of several microns and average of diameter less than 500 nm. It is found that the areal density of wires is relatively higher, when the annealing is carried out at higher temperature i.e. at 400°C. From the field emission studies, the values of the turn-on and threshold field, required to draw emission current density of 10 μA/cm2 and 100 μA/cm2 are observed to be 1.2 V/μm and 1.7 V/μm for the samples annealed at 300 °C and 2.9 V/μm and 3.7 V/μm for that annealed at 400 °C, respectively. The field emission current stability, investigated over duration of more than 2 hours at the preset value of 1 μA, is found to be fairly good in both cases. The simplicity of the synthesis route coupled with the promising field emission properties offer unprecedented advantage for the use of ZnO field emitters for high current density applications.Keywords: ZnO, Nanowires, Thermal oxidation, FieldEmission.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 205813 A Compilation of Nanotechnology in Thin Film Solar Cell Devices
Authors: Nurul Amziah Md Yunus, Izhal Abdul Halin, Nasri Sulaiman, Noor Faezah Ismail, Nik Hasniza Nik Aman
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Nanotechnology has become the world attention in various applications including the solar cells devices due to the uniqueness and benefits of achieving low cost and better performances of devices. Recently, thin film solar cells such as Cadmium Telluride (CdTe), Copper-Indium-Gallium-diSelenide (CIGS), Copper-Zinc-Tin-Sulphide (CZTS), and Dye-Sensitized Solar Cells (DSSC) enhanced by nanotechnology have attracted much attention. Thus, a compilation of nanotechnology devices giving the progress in the solar cells has been presented. It is much related to nanoparticles or nanocrystallines, carbon nanotubes, and nanowires or nanorods structures.Keywords: Nanotechnology, nanocrystalline, nanowires, carbon nanotubes, nanorods, thin film solar cells.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 361512 Nanotechnology in Military Development
Authors: Andrus Pedai, Igor Astrov
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Nanotechnology is the new cyber, according to several major leaders in this field. Just as cyber is entrenched across global society now, nano is poised to be major capabilities enabler of the next decades. Expert members from the National Nanotechnology Initiative (in U.S.) representing government and science disciplines say nano has great significance for the military and the general public. It is predicted that after next 15 years nanotechnology will replace information technology as the most economic technology platform. Nanotechnology has even wider applications than information technology.
Keywords: Nanomaterials, nanowires, nanotechnology, sensors.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 222411 Ni Metallization on SiGe Nanowire
Authors: Y. Li, K. Buddharaju, X. P. Wang
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The mechanism of nickel (Ni) metallization in silicon-germanium (Si0.5Ge0.5) alloy nanowire (NW) was studied. Transmission electron microscope imaging with in-situ annealing was conducted at temperatures of 200oC to 600°C. During rapid formation of Ni germanosilicide, loss of material from from the SiGe NW occurred which led to the formation of a thin Ni germanosilicide filament and eventual void. Energy dispersive X-ray spectroscopy analysis along the SiGe NW before and after annealing determined that Ge atoms tend to out-diffuse from the Ni germanosilicide towards the Ni source in the course of annealing. A model for the Ni germanosilicide formation in SiGe NW is proposed to explain this observation.
Keywords: SiGe, nanowires, germanosilicide.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 178210 DNA Nanowires: A Charge Transfer Approach
Authors: S. Behnia, S. Fathizadeh
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Conductivity properties of DNA molecule is investigated in a simple, but chemically specific approach that is intimately related to the Su-Schrieffer-Heeger (SSH) model. This model is a tight-binding linear nanoscale chain. We have tried to study the electrical current flowing in DNA and investigated the characteristic I-V diagram. As a result, It is shown that there are the (quasi-) ohmic areas in I-V diagram. On the other hand, the regions with a negative differential resistance (NDR) are detectable in diagram.Keywords: Charge transfer in DNA, Chaos theory, Molecular electronics, Negative Differential resistance.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 18449 Fabrication and Characterization of Poly-Si Vertical Nanowire Thin Film Transistor
Authors: N. Shen, T. T. Le, H. Y. Yu, Z. X. Chen, K. T. Win, N. Singh, G. Q. Lo, D. -L. Kwong
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In this paper, we present a vertical nanowire thin film transistor with gate-all-around architecture, fabricated using CMOS compatible processes. A novel method of fabricating polysilicon vertical nanowires of diameter as small as 30 nm using wet-etch is presented. Both n-type and p-type vertical poly-silicon nanowire transistors exhibit superior electrical characteristics as compared to planar devices. On a poly-crystalline nanowire of 30 nm diameter, high Ion/Ioff ratio of 106, low drain-induced barrier lowering (DIBL) of 50 mV/V, and low sub-threshold slope SS~100mV/dec are demonstrated for a device with channel length of 100 nm.
Keywords: Nanowire (NW), Gate-all-around (GAA), polysilicon (poly-Si), thin-film transistor (TFT).
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 21918 Behavior of Current in a Semiconductor Nanostructure under Influence of Embedded Quantum Dots
Authors: H. Paredes Gutiérrez, S. T. Pérez-Merchancano
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Motivated by recent experimental and theoretical developments, we investigate the influence of embedded quantum dot (EQD) of different geometries (lens, ring and pyramidal) in a double barrier heterostructure (DBH). We work with a general theory of quantum transport that accounts the tight-binding model for the spin dependent resonant tunneling in a semiconductor nanostructure, and Rashba spin orbital to study the spin orbit coupling. In this context, we use the second quantization theory for Rashba effect and the standard Green functions method. We calculate the current density as a function of the voltage without and in the presence of quantum dots. In the second case, we considered the size and shape of the quantum dot, and in the two cases, we worked considering the spin polarization affected by external electric fields. We found that the EQD generates significant changes in current when we consider different morphologies of EQD, as those described above. The first thing shown is that the current decreases significantly, such as the geometry of EQD is changed, prevailing the geometrical confinement. Likewise, we see that the current density decreases when the voltage is increased, showing that the quantum system studied here is more efficient when the morphology of the quantum dot changes.
Keywords: Quantum semiconductors, nanostructures, quantum dots, spin polarization.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 9567 Fabrication of High-Power AlGaN/GaN Schottky Barrier Diode with Field Plate Design
Authors: Chia-Jui Yu, Chien-Ju Chen, Jyun-Hao Liao, Chia-Ching Wu, Meng-Chyi Wu
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In this letter, we demonstrate high-performance AlGaN/GaN planar Schottky barrier diodes (SBDs) on the silicon substrate with field plate structure for increasing breakdown voltage VB. A low turn-on resistance RON (3.55 mΩ-cm2), low reverse leakage current (< 0.1 µA) at -100 V, and high reverse breakdown voltage VB (> 1.1 kV) SBD has been fabricated. A virgin SBD exhibited a breakdown voltage (measured at 1 mA/mm) of 615 V, and with the field plate technology device exhibited a breakdown voltage (measured at 1 mA/mm) of 1525 V (the anode–cathode distance was LAC = 40 µm). Devices without the field plate design exhibit a Baliga’s figure of merit of VB2/ RON = 60.2 MW/cm2, whereas devices with the field plate design show a Baliga’s figure of merit of VB2/ RON = 340.9 MW/cm2 (the anode–cathode distance was LAC = 20 µm).
Keywords: AlGaN/GaN heterostructure, silicon substrate, Schottky barrier diode, high breakdown voltage, field plate, Baliga’s figure-of-merit.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 10346 Synthesis and Characterization of Cu-NanoWire Arrays by EMD Using ITO-Template
Authors: Jyoti Narayan, S. Choudhary
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Nanowire arrays of copper with uniform diameters have been synthesized by potentiostatic electrochemical metal deposition (EMD) of copper sulphate and potassium chloride solution within the nano-channels of porous Indium-Tin Oxide (ITO), also known as Tin doped Indium Oxide templates. The nanowires developed were fairly continuous with diameters ranging from 110-140 nm along the entire length. Single as well as poly-crystalline copper wires have been prepared by application of appropriate potential during the EMD process. Scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), small angle electron diffraction (SAED) and atomic force microscopy (AFM) were used to characterize the synthesized nano wires at room temperature. The electrochemical response of synthesized products was evaluated by cyclic voltammetry while surface energy analysis was carried out using a Goniometer.Keywords: Electro-deposition, Metallic nano-wires, Nanomaterials, Template synthesis
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 28555 Fabrication of Cylindrical Silicon Nanowire-Embedded Field Effect Transistor Using Al2O3 Transfer Layer
Authors: Sang Hoon Lee, Tae Il Lee, Su Jeong Lee, Jae Min Myoung
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In order to manufacture short gap single Si nanowire (NW) field effect transistor (FET) by imprinting and transferring method, we introduce the method using Al2O3 sacrificial layer. The diameters of cylindrical Si NW addressed between Au electrodes by dielectrophoretic (DEP) alignment method are controlled to 106, 128, and 148 nm. After imprinting and transfer process, cylindrical Si NW is embedded in PVP adhesive and dielectric layer. By curing transferred cylindrical Si NW and Au electrodes on PVP-coated p++ Si substrate with 200nm-thick SiO2, 3μm gap Si NW FET fabrication was completed. As the diameter of embedded Si NW increases, the mobility of FET increases from 80.51 to 121.24 cm2/V·s and the threshold voltage moves from –7.17 to –2.44 V because the ratio of surface to volume gets reduced.
Keywords: Al2O3 Sacrificial transfer layer, cylindrical silicon nanowires, Dielectrophorestic alignment, Field effect transistor.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 21224 Efficiency Improvements of GaAs-based Solar Cells by Hydrothermally-deposited ZnO Nanostructure Array
Authors: Chun-Yuan Huang, Chiao-Yang Cheng, Chun-Yem Huang, Yan-Kuin Su, James Chin-Lung Fang
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ZnO nanostructures including nanowires, nanorods, and nanoneedles were successfully deposited on GaAs substrates, respectively, by simple two-step chemical method for the first time. A ZnO seed layer was firstly pre-coated on the O2-plasma treated substrate by sol-gel process, followed by the nucleation of ZnO nanostructures through hydrothermal synthesis. Nanostructures with different average diameter (15-250 nm), length (0.9-1.8 μm), density (0.9-16×109 cm-2) were obtained via adjusting the growth time and concentration of precursors. From the reflectivity spectra, we concluded ordered and taper nanostructures were preferential for photovoltaic applications. ZnO nanoneedles with an average diameter of 106 nm, a moderate length of 2.4 μm, and the density of 7.2×109 cm-2 could be synthesized in the concentration of 0.04 M for 18 h. Integrated with the nanoneedle array, the power conversion efficiency of single junction solar cell was increased from 7.3 to 12.2%, corresponding to a 67% improvement.Keywords: Anti-reflection, Chemical synthesis, Solar cells, ZnO nanostructures.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 19433 A Ring-Shaped Tri-Axial Force Sensor for Minimally Invasive Surgery
Authors: Beibei Han, Yong-Jin Yoon, Muhammad Hamidullah, Angel Tsu-Hui Lin, Woo-Tae Park
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This paper presents the design of a ring-shaped tri-axial fore sensor that can be incorporated into the tip of a guidewire for use in minimally invasive surgery (MIS). The designed sensor comprises a ring-shaped structure located at the center of four cantilever beams. The ringdesign allows surgical tools to be easily passed through which largely simplified the integration process. Silicon nanowires (SiNWs) are used aspiezoresistive sensing elementsembeddedon the four cantilevers of the sensor to detect the resistance change caused by the applied load.An integration scheme with new designed guidewire tip structure having two coils at the distal end is presented. Finite element modeling has been employed in the sensor design to find the maximum stress location in order to put the SiNWs at the high stress regions to obtain maximum output. A maximum applicable force of 5 mN is found from modeling. The interaction mechanism between the designed sensor and a steel wire has been modeled by FEM. A linear relationship between the applied load on the steel wire and the induced stress on the SiNWs were observed.
Keywords: Triaxial MEMS force sensor, Ring shape, Silicon Nanowire, Minimally invasive surgery.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 22772 Structural and Optical Properties of Silver Sulfide-Reduced Graphene Oxide Nanocomposite
Authors: Oyugi Ngure Robert, Tabitha A. Amollo, Kallen Mulilo Nalyanya
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Nanomaterials have attracted significant attention in research because of their exemplary properties, making them suitable for diverse applications. This paper reports the successful synthesis as well as the structural and optical properties of silver sulfide-reduced graphene oxide (Ag2S-rGO) nanocomposite. The nanocomposite was synthesized by the chemical reduction method. Scanning electron microscopy (SEM) showed that the reduced graphene oxide (rGO) sheets were intercalated within the Ag2S nanoparticles during the chemical reduction process. The SEM images also showed that Ag2S had the shape of nanowires. Further, SEM energy dispersive X-ray (SEM EDX) showed that Ag2S-rGO is mainly composed of C, Ag, O, and S. X-ray diffraction analysis manifested a high crystallinity for the nanowire-shaped Ag2S nanoparticles with a d-spacing ranging between 1.0 Å and 5.2 Å. Thermal gravimetric analysis (TGA) showed that rGO enhances the thermal stability of the nanocomposite. Ag2S-rGO nanocomposite exhibited strong optical absorption in the UV region. The formed nanocomposite is dispersible in polar and non-polar solvents, qualifying it for solution-based device processing. Thus, the surface plasmon resonance effect associated with metallic nanoparticles, strong optical absorption, thermal stability crystallinity and hydrophilicity of the nanocomposite suits it for solar energy conversion applications.
Keywords: Silver sulfide, reduced graphene oxide, nanocomposite, structural properties, optical properties.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 291 Studying the Dynamical Response of Nano-Microelectromechanical Devices for Nanomechanical Testing of Nanostructures
Authors: Mohammad Reza Zamani Kouhpanji
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Characterizing the fatigue and fracture properties of nanostructures is one of the most challenging tasks in nanoscience and nanotechnology due to lack of a MEMS/NEMS device for generating uniform cyclic loadings at high frequencies. Here, the dynamic response of a recently proposed MEMS/NEMS device under different inputs signals is completely investigated. This MEMS/NEMS device is designed and modeled based on the electromagnetic force induced between paired parallel wires carrying electrical currents, known as Ampere’s Force Law (AFL). Since this MEMS/NEMS device only uses two paired wires for actuation part and sensing part, it represents highly sensitive and linear response for nanostructures with any stiffness and shapes (single or arrays of nanowires, nanotubes, nanosheets or nanowalls). In addition to studying the maximum gains at different resonance frequencies of the MEMS/NEMS device, its dynamical responses are investigated for different inputs and nanostructure properties to demonstrate the capability, usability, and reliability of the device for wide range of nanostructures. This MEMS/NEMS device can be readily integrated into SEM/TEM instruments to provide real time study of the fatigue and fracture properties of nanostructures as well as their softening or hardening behaviors, and initiation and/or propagation of nanocracks in them.
Keywords: Ampere’s force law, dynamical response, fatigue and fracture characterization, paired wire actuators and sensors, MEMS/NEMS devices.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 985