Search results for: threshold extractor circuit

Authors: Rajesh Kumar, Roopali Dogra, Puneet Aggarwal

Abstract:

In the era of technological advancement, use of computer technology has become inevitable. Hence it has become the need of the hour to integrate software methods in engineering curriculum as a part to boost pedagogy techniques. Simulations software is a great help to graduates of disciplines such as electrical engineering. Since electrical engineering deals with high voltages and heavy instruments, extra care must be taken while operating with them. The viable solution would be to have appropriate control. The appropriate control could be well designed if engineers have knowledge of kind of waveforms associated with the system. Though these waveforms can be plotted manually, but it consumes a lot of time. Hence aid of simulation helps to understand steady state of system and resulting in better performance. In this paper computer, aided teaching of transformer is carried out using MATLAB/Simulink. The test carried out on a transformer includes open circuit test and short circuit respectively. The respective parameters of transformer are then calculated using the values obtained from open circuit and short circuit test respectively using Simulink.

Keywords: Computer aided teaching, transformer, open circuit test, short circuit test, Simulink.

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Authors: K. E. Kaharudin, A. H. Hamidon, F. Salehuddin

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Vertical Double Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is believed to suppress various short channel effect problems. The gate to channel coupling in vertical DG-MOSFET are doubled, thus resulting in higher current density. By having two gates, both gates are able to control the channel from both sides and possess better electrostatic control over the channel. In order to ensure that the transistor possess a superb turn-off characteristic, the subs-threshold swing (SS) must be kept at minimum value (60-90mV/dec). By utilizing SILVACO TCAD software, an n-channel vertical DG-MOSFET was successfully designed while keeping the sub-threshold swing (SS) value as minimum as possible. From the observation made, the value of sub-threshold swing (SS) was able to be varied by adjusting the height of the silicon pillar. The minimum value of sub-threshold swing (SS) was found to be 64.7mV/dec with threshold voltage (V_TH) of 0.895V. The ideal height of the vertical DG-MOSFET pillar was found to be at 0.265 µm.

Keywords: DG-MOSFET, pillar, SCE, vertical

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Authors: Wei Yi Lim, M. Annamalai Arasu, M. Kumarasamy Raja, Minkyu Je

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In this paper, the design of wide-swing constant transconductance (g_m) bias circuit that generates bias voltage for low-noise amplifier (LNA) circuit design by using an off-chip resistor is demonstrated. The overall transconductance (G_m) generated by the constant g_m bias circuit is important to maintain the overall gain and noise figure of the LNA circuit. Therefore, investigation is performed to study the variation in G_m with process, temperature and supply voltage (PVT).  Temperature and supply voltage are swept from -10 °C to 85 °C and 1.425 V to 1.575 V respectively, while the process conditions are also varied to the extreme and the g_m variation is eventually concluded at between -3 % to 7 %. With the slight variation in the g_m value, through simulation, at worst condition of state SS, we are able to attain a conversion gain (S₂₁) variation of -3.10 % and a noise figure (NF) variation of 18.71 %. The whole constant g_m circuit draws approximately 100 µA from a 1.5V supply and is designed based on 0.13 µm CMOS process. 

Keywords: Transconductance, LNA, temperature, process.

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Authors: Min-ju Kwon, Chae-won Kim, Jeong-yun Seo, Hee-guk Chae, Yong-seo Koo

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In this paper, we presented the LDO (low-dropout) regulator which enhanced the PSRR by applying the constant current source generation technique through the BGR (Band Gap Reference) to form the noise sensing circuit. The current source through the BGR has a constant current value even if the applied voltage varies. Then, the noise sensing circuit, which is composed of the current source through the BGR, operated between the error amplifier and the pass transistor gate of the LDO regulator. As a result, the LDO regulator has a PSRR of -68.2 dB at 1k Hz, -45.85 dB at 1 MHz and -45 dB at 10 MHz. the other performance of the proposed LDO was maintained at the same level of the conventional LDO regulator.

Keywords: LDO regulator, noise sensing circuit, current reference, pass transistor.

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Authors: Abolhassan Razminia, Mohammad-Ali Sadrnia

Abstract:

Chua’s circuit is one of the most important electronic devices that are used for Chaos and Bifurcation studies. A central role of secure communication is devoted to it. Since the adaptive control is used vastly in the linear systems control, here we introduce a new trend of application of adaptive method in the chaos controlling field. In this paper, we try to derive a new adaptive control scheme for Chua’s circuit controlling because control of chaos is often very important in practical operations. The novelty of this approach is for sake of its robustness against the external perturbations which is simulated as an additive noise in all measured states and can be generalized to other chaotic systems. Our approach is based on Lyapunov analysis and the adaptation law is considered for the feedback gain. Because of this, we have named it NAFT (Nonlinear Adaptive Feedback Technique). At last, simulations show the capability of the presented technique for Chua’s circuit.

Keywords: Chaos, adaptive control, nonlinear control, Chua's circuit.

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Authors: Azza M. Anis, M. M. Abutaleb, Hani F. Ragai, M. I. Eladawy

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This paper presents the characterization and design of a capacitive pressure sensor with LC-based 0.35 µm CMOS readout circuit. SPICE is employed to evaluate the characteristics of the readout circuit and COMSOL multiphysics structural analysis is used to simulate the behavior of the pressure sensor. The readout circuit converts the capacitance variation of the pressure sensor into the frequency output. Simulation results show that the proposed pressure sensor has output frequency from 2.50 to 2.28 GHz in a pressure range from 0.1 to 2 MPa almost linearly. The sensitivity of the frequency shift with respect to the applied pressure load is 0.11 GHz/MPa.

Keywords: CMOS LC-based oscillator, micro pressure sensor, silicon carbide

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Authors: Markus G. Ortner, Christian Magele, Klaus Krischan

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Knowledge about the magnetic quantities in a magnetic circuit is always of great interest. On the one hand, this information is needed for the simulation of a transformer. On the other hand, parameter studies are more reliable, if the magnetic quantities are derived from a well established model. One possibility to model the 3-phase transformer is by using a magnetic equivalent circuit (MEC). Though this is a well known system, it is often not an easy task to set up such a model for a large number of lumped elements which additionally includes the nonlinear characteristic of the magnetic material. Here we show the setup of a solver for a MEC and the results of the calculation in comparison to measurements taken. The equations of the MEC are based on a rearranged system of the nodal analysis. Thus it is possible to achieve a minimum number of equations, and a clear and simple structure. Hence, it is uncomplicated in its handling and it supports the iteration process. Additional helpful tasks are implemented within the solver to enhance the performance. The electric circuit is described by an electric equivalent circuit (EEC). Our results for the 3-phase transformer demonstrate the computational efficiency of the solver, and show the benefit of the application of a MEC.

Keywords: Inrush current, magnetic equivalent circuit, nonlinear behavior, transformer.

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Authors: Qingjiang Li, Hui Xu, Haijun Liu, Xiaobo Tian

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To judge whether the memristor can be interpreted as the fourth fundamental circuit element, we propose a variable-relation criterion of fundamental circuit elements. According to the criterion, we investigate the nature of three fundamental circuit elements and the memristor. From the perspective of variables relation, the memristor builds a direct relation between the voltage across it and the current through it, instead of a direct relation between the magnetic flux and the charge. Thus, it is better to characterize the memristor and the resistor as two special cases of the same fundamental circuit element, which is the memristive system in Chua-s new framework. Finally, the definition of memristor is refined according to the difference between the magnetic flux and the flux linkage.

Keywords: Memristor, Fundamental, Variable-Relation Criterion, Memristive system

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Authors: Md. Asif Jahangir Chowdhury, Md. Shahriar Rizwan, M. S. Islam

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In CMOS integrated circuit design there is a trade-off between static power consumption and technology scaling. Recently, the power density has increased due to combination of higher clock speeds, greater functional integration, and smaller process geometries. As a result static power consumption is becoming more dominant. This is a challenge for the circuit designers. However, the designers do have a few methods which they can use to reduce this static power consumption. But all of these methods have some drawbacks. In order to achieve lower static power consumption, one has to sacrifice design area and circuit performance. In this paper, we propose a new method to reduce static power in the CMOS VLSI circuit using Variable Body Biasing technique without being penalized in area requirement and circuit performance.

Keywords: variable body biasing, state saving technique, stack effect, dual V-th, static power reduction.

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Authors: J. Mohan, S. Maheshwari

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A new circuit topology realizing a first-order currentmode all-pass filter is proposed using two dual-output second generation current conveyor and two passive components. The circuit possesses low-input and high-output impedance, which makes it ideal for current-mode systems. The proposed circuit is verified through PSPICE simulation results.

Keywords: active filter, all-pass filter, current-mode, current conveyor.

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Authors: M. Fadlallah, G. Ghibaudo, C. G. Theodorou

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The dynamic variation in memory devices such as the Static Random Access Memory can give errors in read or write operations. In this paper, the effect of low-frequency and random telegraph noise on the dynamic variation of one SRAM cell is detailed. The effect on circuit noise, speed, and length of time of processing is examined, using the Supply Read Retention Voltage and the Read Static Noise Margin. New test run methods are also developed. The obtained results simulation shows the importance of noise caused by dynamic variation, and the impact of Random Telegraph noise on SRAM variability is examined by evaluating the statistical distributions of Random Telegraph noise amplitude in the pull-up, pull-down. The threshold voltage mismatch between neighboring cell transistors due to intrinsic fluctuations typically contributes to larger reductions in static noise margin. Also the contribution of each of the SRAM transistor to total dynamic variation has been identified.

Keywords: Low-frequency noise, Random Telegraph Noise, Dynamic Variation, SRRV.

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Authors: M.Hosseinghadiry, H. Mohammadi, M.Nadisenejani

Abstract:

with increasing circuits- complexity and demand to use portable devices, power consumption is one of the most important parameters these days. Full adders are the basic block of many circuits. Therefore reducing power consumption in full adders is very important in low power circuits. One of the most powerconsuming modules in full adders is XOR/XNOR circuit. This paper presents two new full adders based on two new logic approaches. The proposed logic approaches use one XOR or XNOR gate to implement a full adder cell. Therefore, delay and power will be decreased. Using two new approaches and two XOR and XNOR gates, two new full adders have been implemented in this paper. Simulations are carried out by HSPICE in 0.18μm bulk technology with 1.8V supply voltage. The results show that the ten-transistors proposed full adder has 12% less power consumption and is 5% faster in comparison to MB12T full adder. 9T is more efficient in area and is 24% better than similar 10T full adder in term of power consumption. The main drawback of the proposed circuits is output threshold loss problem.

Keywords: Full adder, XNOR, Low power, High performance, Very Large Scale Integrated Circuit.

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Authors: Chenguang Guo, Lei Chen, Yanlong Zhang

Abstract:

This paper describes a novel optimized JTAG interface circuit between a JTAG controller and target IC. Being able to access JTAG using only one or two pins, this circuit does not change the original boundary scanning test frequency of target IC. Compared with the traditional JTAG interface which based on IEEE std. 1149.1, this reduced pin technology is more applicability in pin limited devices, and it is easier to control the scale of target IC for the designer.

Keywords: Boundary scan, JTAG interface, Test frequency, Reduced pin

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Authors: Hee-Guk Chae, Bo-Bae Song, Kyoung-Il Do, Jeong-Yun Seo, Yong-Seo Koo

Abstract:

In this study, an improved Electrostatic Discharge (ESD) protection circuit with low trigger voltage and high holding voltage is proposed. ESD has become a serious problem in the semiconductor process because the semiconductor density has become very high these days. Therefore, much research has been done to prevent ESD. The proposed circuit is a stacked structure of the new unit structure combined by the Zener Triggering (SCR ZTSCR) and the High Holding Voltage SCR (HHVSCR). The simulation results show that the proposed circuit has low trigger voltage and high holding voltage. And the stack technology is applied to adjust the various operating voltage. As the results, the holding voltage is 7.7 V for 2-stack and 10.7 V for 3-stack.

Keywords: ESD, SCR, latch-up, power clamp, holding voltage.

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Authors: Aakash Subramanian, Vansh Pal Singh Makh, Abhijit Mitra

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A new digital transceiver circuit for asynchronous frame detection is proposed where both the transmitter and receiver contain all digital components, thereby avoiding possible use of conventional devices like monostable multivibrators with unstable external components such as resistances and capacitances. The proposed receiver circuit, in particular, uses a combinational logic block yielding an output which changes its state as soon as the start bit of a new frame is detected. This, in turn, helps in generating an efficient receiver sampling clock. A data latching circuit is also used in the receiver to latch the recovered data bits in any new frame. The proposed receiver structure is also extended from 4- bit information to any general n data bits within a frame with a common expression for the output of the combinational logic block. Performance of the proposed hardware design is evaluated in terms of time delay, reliability and robustness in comparison with the standard schemes using monostable multivibrators. It is observed from hardware implementation that the proposed circuit achieves almost 33 percent speed up over any conventional circuit.

Keywords: Asynchronous Communication, Digital Detector, Combinational logic output, Sampling clock generator, Hardwareimplementation.

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Authors: Agord M. Pinto Jr., Yuzo Iano, Leandro T. Manera, Raphael R. N. Souza

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This paper describes an optimization tool-based design strategy for a Current Mode Logic CML divide-by-2 circuit. Representing a building block for output frequency generation in a RFID protocol based-frequency synthesizer, the circuit was designed to minimize the power consumption for driving of multiple loads with unbalancing (at transceiver level). Implemented with XFAB XC08 180 nm technology, the circuit was optimized through MunEDA WiCkeD tool at Cadence Virtuoso Analog Design Environment ADE.

Keywords: Divide-by-2 circuit, CMOS technology, PLL phase locked-loop, optimization tool, CML current mode logic, RF transceiver.

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Authors: Hamed Homaei, Iraj Mahdavi, Ali Tajdin

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One of the main concerns of miners is to increase the quality level of their products because the mining metals price depends on their quality level; however, increasing the quality level of these products has different costs at different levels of the supply chain. These costs usually increase after extractor level. This paper studies the coordination issue of a decentralized three-level supply chain with one supplier (extractor), one mineral processor and one manufacturer in which the increasing product quality level cost at the processor level is higher than the supplier and at the level of the manufacturer is more than the processor. We identify the optimal product quality level for each supply chain member by designing a revenue sharing contract. Finally, numerical examples show that the designed contract not only increases the final product quality level but also provides a win-win condition for all supply chain members and increases the whole supply chain profit.

Keywords: Three-stage supply chain, product quality improvement, channel coordination, revenue sharing.

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Authors: Hae Young Lee, Tae Ho Cho

Abstract:

In many sensor network applications, sensor nodes are deployed in open environments, and hence are vulnerable to physical attacks, potentially compromising the node's cryptographic keys. False sensing report can be injected through compromised nodes, which can lead to not only false alarms but also the depletion of limited energy resource in battery powered networks. Ye et al. proposed a statistical en-route filtering scheme (SEF) to detect such false reports during the forwarding process. In this scheme, the choice of a security threshold value is important since it trades off detection power and overhead. In this paper, we propose a fuzzy logic for determining a security threshold value in the SEF based sensor networks. The fuzzy logic determines a security threshold by considering the number of partitions in a global key pool, the number of compromised partitions, and the energy level of nodes. The fuzzy based threshold value can conserve energy, while it provides sufficient detection power.

Keywords: Fuzzy logic, security, sensor network.

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Authors: C. Kalamani, V. Abishek Karthick, S. Anitha, K. Kavin Kumar

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The fault tolerant system plays a crucial role in the critical applications which are being used in the present scenario. A fault may change the functionality of circuits. Aim of this paper is to design multiplier using fault tolerant hybrid full adder. Fault tolerant hybrid full adder is designed to check and repair any fault in the circuit using self-checking circuit and the self-repairing circuit. Further, the use of conventional logic circuits may result in more area, delay as well as power consumption. In order to reduce these parameters of the circuit, GDI (Gate Diffusion Input) techniques with less number of transistors are used compared to conventional full adder circuit. This reduces the area, delay and power consumption. The proposed method solves the major problems occurring in the most crucial and critical applications.

Keywords: Gate diffusion input, hybrid full adder, self-checking, fault tolerant.

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Authors: H. Krouma, M. Barkat, K. Kemih, M. Benslama, Y. Yacine

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In this paper, we consider the analysis of the acquisition process for a hybrid double-dwell system with antenna diversity for DS-CDMA (direct sequence-code division multiple access) using an adaptive threshold. Acquisition systems with a fixed threshold value are unable to adapt to fast varying mobile communications environments and may result in a high false alarm rate, and/or low detection probability. Therefore, we propose an adaptively varying threshold scheme through the use of a cellaveraging constant false alarm rate (CA-CFAR) algorithm, which is well known in the field of radar detection. We derive exact expressions for the probabilities of detection and false alarm in Rayleigh fading channels. The mean acquisition time of the system under consideration is also derived. The performance of the system is analyzed and compared to that of a hybrid single dwell system.

Keywords: Adaptive threshold, hybrid double-dwell system, CA-CFAR algorithm, DS-CDMA.

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Authors: Hubert Klar

Abstract:

High double excitation of two-electron atoms has been investigated using hyperpherical coordinates within a modified adiabatic expansion technique. This modification creates a novel fictitious force leading to a spontaneous exchange symmetry breaking at high double excitation. The Pauli principle must therefore be regarded as approximation valid only at low excitation energy. Threshold electron scattering from high Rydberg states shows an unexpected time reversal symmetry breaking. At threshold for double escape we discover a broad (few eV) Cooper pair.

Keywords: Correlation, resonances, threshold ionization, Cooper pair.

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Authors: Hani Baek, Gwang Min Sun, Chansun Shin, Sung Ho Ahn

Abstract:

Fast neutron irradiation using nuclear reactors is an effective method to improve switching loss and short circuit durability of power semiconductor (insulated gate bipolar transistors (IGBT) and insulated gate transistors (IGT), etc.). However, not only fast neutrons but also thermal neutrons, epithermal neutrons and gamma exist in the nuclear reactor. And the electrical properties of the IGBT may be deteriorated by the irradiation of gamma. Gamma irradiation damages are known to be caused by Total Ionizing Dose (TID) effect and Single Event Effect (SEE), Displacement Damage. Especially, the TID effect deteriorated the electrical properties such as leakage current and threshold voltage of a power semiconductor. This work can confirm the effect of the gamma irradiation on the electrical properties of 600 V NPT-IGBT. Irradiation of gamma forms lattice defects in the gate oxide and Si-SiO₂ interface of the IGBT. It was confirmed that this lattice defect acts on the center of the trap and affects the threshold voltage, thereby negatively shifted the threshold voltage according to TID. In addition to the change in the carrier mobility, the conductivity modulation decreases in the n-drift region, indicating a negative influence that the forward voltage drop decreases. The turn-off delay time of the device before irradiation was 212 ns. Those of 2.5, 10, 30, 70 and 100 kRad(Si) were 225, 258, 311, 328, and 350 ns, respectively. The gamma irradiation increased the turn-off delay time of the IGBT by approximately 65%, and the switching characteristics deteriorated.

Keywords: NPT-IGBT, gamma irradiation, switching, turn-off delay time, recombination, trap center.

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Authors: Guiheng Zhang, Wei Zhang, Jun Fu, Yudong Wang

Abstract:

A 900 MHz three-stage SiGe power amplifier (PA) with high power gain is presented in this paper. Volterra Series is applied to analyze nonlinearity sources of SiGe HBT device model clearly. Meanwhile, the influence of operating current to IMD3 is discussed. Then a β-helper current mirror bias circuit is applied to improve linearity, since the β-helper current mirror bias circuit can offer stable base biasing voltage. Meanwhile, it can also work as predistortion circuit when biasing voltages of three bias circuits are fine-tuned, by this way, the power gain and operating current of PA are optimized for best linearity. The three power stages which fabricated by 0.18 μm SiGe technology are bonded to the printed circuit board (PCB) to obtain impedances by Load-Pull system, then matching networks are done for best linearity with discrete passive components on PCB. The final measured three-stage PA exhibits 21.1 dBm of output power at 1 dB compression point (OP1dB) with power added efficiency (PAE) of 20.6% and 33 dB power gain under 3.3 V power supply voltage.

Keywords: High gain power amplifier, linearization bias circuit, SiGe HBT model, Volterra Series.

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Authors: A. Kojah, A. Nacaroğlu

Abstract:

Single phase transmission lines are used to transfer data or energy between two users. Transient conditions such as switching operations and short circuit faults cause the generation of the fluctuation on the waveform to be transmitted. Spatial voltage distribution on the single phase transmission line may change owing to the position and duration of the short circuit fault in the system. In this paper, the state space representation of the single phase transmission line for short circuit fault and for various types of terminations is given. Since the transmission line is modeled in time domain using distributed parametric elements, the mathematical representation of the event is given in state space (time domain) differential equation form. It also makes easy to solve the problem because of the time and space dependent characteristics of the voltage variations on the distributed parametrically modeled transmission line.

Keywords: Energy transmission, transient effects, transmission line, transient voltage, RLC short circuit, single phase.

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Authors: Chih-Chiang Hua, Yi-Hsiung Fang, Yuan-Jhen Siao

Abstract:

A bridgeless boost (BLB) power factor correction (PFC) rectifier with hold-up time extension circuit is proposed in this paper. A full bridge rectifier is widely used in the front end of the ac/dc converter. Since the shortcomings of the full bridge rectifier, the bridgeless rectifier is developed. A BLB rectifier topology is utilized with the hold-up time extension circuit. Unlike the traditional hold-up time extension circuit, the proposed extension scheme uses fewer active switches to achieve a longer hold-up time. Simulation results are presented to verify the converter performance.

Keywords: Bridgeless boost, boost converter, power factor correction, hold-up time.

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Authors: Yukinari Minagi , Akinori Kanasugi

Abstract:

This paper describes about dynamic reconfiguration to miniaturize arithmetic circuits in general-purpose processor. Dynamic reconfiguration is a technique to realize required functions by changing hardware construction during operation. The proposed arithmetic circuit performs floating-point arithmetic which is frequently used in science and technology. The data format is floating-point based on IEEE754. The proposed circuit is designed using VHDL, and verified the correct operation by simulations and experiments.

Keywords: dynamic reconfiguration, floating-point arithmetic, double precision, FPGA

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Authors: F. Nejadebrahimi, M. ArdebiliPour

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In this paper, we are going to determine the threshold levels of adaptive modulation in a burst by burst CDMA system by a suboptimum method so that the above method attempts to increase the average bit per symbol (BPS) rate of transceiver system by switching between the different modulation modes in variable channel condition. In this method, we choose the minimum values of average bit error rate (BER) and maximum values of average BPS on different values of average channel signal to noise ratio (SNR) and then calculate the relative threshold levels of them, so that when the instantaneous SNR increases, a higher order modulation be employed for increasing throughput and vise-versa when the instantaneous SNR decreases, a lower order modulation be employed for improvement of BER. In transmission step, by this adaptive modulation method, in according to comparison between obtained estimation of pilot symbols and a set of above suboptimum threshold levels, above system chooses one of states no transmission, BPSK, 4QAM and square 16QAM for modulation of data. The expected channel in this paper is a slow Rayleigh fading.

Keywords: AQAM, burst, BER, BPS, CDMA, threshold.

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Authors: Hossein Sahoolizadeh, Alishir Moradi Kordalivand, Zargham Heidari

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In first stage of each microwave receiver there is Low Noise Amplifier (LNA) circuit, and this stage has important rule in quality factor of the receiver. The design of a LNA in Radio Frequency (RF) circuit requires the trade-off many importance characteristics such as gain, Noise Figure (NF), stability, power consumption and complexity. This situation Forces desingners to make choices in the desing of RF circuits. In this paper the aim is to design and simulate a single stage LNA circuit with high gain and low noise using MESFET for frequency range of 5 GHz to 6 GHz. The desing simulation process is down using Advance Design System (ADS). A single stage LNA has successfully designed with 15.83 dB forward gain and 1.26 dB noise figure in frequency of 5.3 GHz. Also the designed LNA should be working stably In a frequency range of 5 GHz to 6 GHz.

Keywords: Advance Design System, Low Noise Amplifier, Radio Frequency, Noise Figure.

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Authors: AL.AL, M. B. I. Reaz, S. M. A. Motakabber, Mohd Alauddin Mohd Ali

Abstract:

Nowadays it is a trend for electronic circuit designers to integrate all system components on a single-chip. This paper proposed the design of a single-chip proportional to absolute temperature (PTAT) sensor including a voltage reference circuit using CEDEC 0.18m CMOS Technology. It is a challenge to design asingle-chip wide range linear response temperature sensor for many applications. The channel widths between the compensation transistor and the reference transistor are critical to design the PTAT temperature sensor circuit. The designed temperature sensor shows excellent linearity between -100°C to 200° and the sensitivity is about 0.05mV/°C. The chip is designed to operate with a single voltage source of 1.6V.

Keywords: PTAT, single-chip circuit, linear temperature sensor, CMOS technology.

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Authors: A. Ahadpour Shal, A. Ghadimi, A. Azadbar

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In this paper a new method for increasing the speed of SAGCM-APD is proposed. Utilizing carrier rate equations in different regions of the structure, a circuit model for the structure is obtained. In this research, in addition to frequency response, the effect of added new charge layer on some transient parameters like slew-rate, rising and falling times have been considered. Finally, by trading-off among some physical parameters such as different layers widths and droppings, a noticeable decrease in breakdown voltage has been achieved. The results of simulation, illustrate some features of proposed structure improvement in comparison with conventional SAGCM-APD structures.

Keywords: Optical communication systems (OCS), Circuit modeling, breakdown voltage, SAGCM APD

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