Search results for: field programmable gate array
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 2877

Search results for: field programmable gate array

2817 Multipurpose Agricultural Robot Platform: Conceptual Design of Control System Software for Autonomous Driving and Agricultural Operations Using Programmable Logic Controller

Authors: P. Abhishesh, B. S. Ryuh, Y. S. Oh, H. J. Moon, R. Akanksha

Abstract:

This paper discusses about the conceptual design and development of the control system software using Programmable logic controller (PLC) for autonomous driving and agricultural operations of Multipurpose Agricultural Robot Platform (MARP). Based on given initial conditions by field analysis and desired agricultural operations, the structural design development of MARP is done using modelling and analysis tool. PLC, being robust and easy to use, has been used to design the autonomous control system of robot platform for desired parameters. The robot is capable of performing autonomous driving and three automatic agricultural operations, viz. hilling, mulching, and sowing of seeds in the respective order. The input received from various sensors on the field is later transmitted to the controller via ZigBee network to make the changes in the control program to get desired field output. The research is conducted to provide assistance to farmers by reducing labor hours for agricultural activities by implementing automation. This study will provide an alternative to the existing systems with machineries attached behind tractors and rigorous manual operations on agricultural field at effective cost.

Keywords: Agricultural operations, autonomous driving, MARP, PLC.

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2816 Practical Simulation Model of Floating-Gate MOS Transistor in Sub 100nm Technologies

Authors: Zina Saheb, Ezz El-Masry

Abstract:

As the Silicon oxide scaled down in MOSFET technology to few nanometers, gate Direct Tunneling (DT) in Floating gate (FGMOSFET) devices has become a major concern for analog designers. FGMOSFET has been used in many low-voltage and low-power applications, however, there is no accurate model that account for DT gate leakage in nano-scale. This paper studied and analyzed different simulation models for FGMOSFET using TSMC 90-nm technology. The simulation results for FGMOSFET cascade current mirror shows the impact of DT on circuit performance in terms of current and voltage without the need for fabrication. This works shows the significance of using an accurate model for FGMOSFET in nan-scale technologies.

Keywords: CMOS transistor, direct-tunneling current, floatinggate, gate-leakage current, simulation model.

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2815 Characterization and Modeling of Piezoelectric Integrated Micro Speakers for Audio Acoustic Actuation

Authors: J. Mendoza-López, S. Sánchez-Solano, J. L. Huertas-Díaz

Abstract:

An array of piezoelectric micro actuators can be used for radiation of an ultrasonic carrier signal modulated in amplitude with an acoustic signal, which yields audio frequency applications as the air acts as a self-demodulating medium. This application is known as the parametric array. We propose a parametric array with array elements based on existing piezoelectric micro ultrasonic transducer (pMUT) design techniques. In order to reach enough acoustic output power at a desired operating frequency, a proper ratio between number of array elements and array size needs to be used, with an array total area of the order of one cm square. The transducers presented are characterized via impedance, admittance, noise figure, transducer gain and frequency responses.

Keywords: Pizeoelectric, Microspeaker, MEMS, pMUT, Parametric Array

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2814 Extended Arithmetic Precision in Meshfree Calculations

Authors: Edward J. Kansa, Pavel Holoborodko

Abstract:

Continuously differentiable radial basis functions (RBFs) are meshfree, converge faster as the dimensionality increases, and is theoretically spectrally convergent. When implemented on current single and double precision computers, such RBFs can suffer from ill-conditioning because the systems of equations needed to be solved to find the expansion coefficients are full. However, the Advanpix extended precision software package allows computer mathematics to resemble asymptotically ideal Platonic mathematics. Additionally, full systems with extended precision execute faster graphical processors units and field-programmable gate arrays because no branching is needed. Sparse equation systems are fast for iterative solvers in a very limited number of cases.

Keywords: Meshless spectrally convergent, partial differential equations, extended arithmetic precision, no branching.

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2813 Gate Voltage Controlled Humidity Sensing Using MOSFET of VO2 Particles

Authors: A. A. Akande, B. P. Dhonge, B. W. Mwakikunga, A. G. J. Machatine

Abstract:

This article presents gate-voltage controlled humidity sensing performance of vanadium dioxide nanoparticles prepared from NH4VO3 precursor using microwave irradiation technique. The X-ray diffraction, transmission electron diffraction, and Raman analyses reveal the formation of VO2 (B) with V2O5 and an amorphous phase. The BET surface area is found to be 67.67 m2/g. The humidity sensing measurements using the patented lateral-gate MOSFET configuration was carried out. The results show the optimum response at 5 V up to 8 V of gate voltages for 10 to 80% of relative humidity. The dose-response equation reveals the enhanced resilience of the gated VO2 sensor which may saturate above 272% humidity. The response and recovery times are remarkably much faster (about 60 s) than in non-gated VO2 sensors which normally show response and recovery times of the order of 5 minutes (300 s).

Keywords: VO2, VO2 (B), V2O5, MOSFET, gate voltage, humidity sensor.

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2812 Simulation Study of Lateral Trench Gate Power MOSFET on 4H-SiC

Authors: Yashvir Singh, Mayank Joshi

Abstract:

A lateral trench-gate power metal-oxide-semiconductor on 4H-SiC is proposed. The device consists of two separate trenches in which two gates are placed on both sides of P-body region resulting two parallel channels. Enhanced current conduction and reduced-surface-field effect in the structure provide substantial improvement in the device performance. Using two dimensional simulations, the performance of proposed device is evaluated and compare of with that of the conventional device for same cell pitch. It is demonstrated that the proposed structure provides two times higher output current, 11% decrease in threshold voltage, 70% improvement in transconductance, 70% reduction in specific ON-resistance, 52% increase in breakdown voltage, and nearly eight time improvement in figure-of-merit over the conventional device.

Keywords: 4H-SiC, lateral, trench-gate, power MOSFET.

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2811 Proposal for a Ultra Low Voltage NAND gate to withstand Power Analysis Attacks

Authors: Omid Mirmotahari, Yngvar Berg

Abstract:

In this paper we promote the Ultra Low Voltage (ULV) NAND gate to replace either partly or entirely the encryption block of a design to withstand power analysis attack.

Keywords: Differential Power Analysis (DPA), Low Voltage (LV), Ultra Low Voltage (ULV), Floating-Gate (FG), supply current analysis.

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2810 Two-dimensional Analytical Drain Current Model for Multilayered-Gate Material Engineered Trapezoidal Recessed Channel(MLGME-TRC) MOSFET: a Novel Design

Authors: Priyanka Malik A, Rishu Chaujar B, Mridula Gupta C, R.S. Gupta D

Abstract:

In this paper, for the first time, a two-dimensional (2D) analytical drain current model for sub-100 nm multi-layered gate material engineered trapezoidal recessed channel (MLGMETRC) MOSFET: a novel design is presented and investigated using ATLAS and DEVEDIT device simulators, to mitigate the large gate leakages and increased standby power consumption that arise due to continued scaling of SiO2-based gate dielectrics. The twodimensional (2D) analytical model based on solution of Poisson-s equation in cylindrical coordinates, utilizing the cylindrical approximation, has been developed which evaluate the surface potential, electric field, drain current, switching metric: ION/IOFF ratio and transconductance for the proposed design. A good agreement between the model predictions and device simulation results is obtained, verifying the accuracy of the proposed analytical model.

Keywords: ATLAS, DEVEDIT, NJD, MLGME- TRCMOSFET.

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2809 An Ultra-Low Output Impedance Power Amplifier for Tx Array in 7-Tesla Magnetic Resonance Imaging

Authors: Ashraf Abuelhaija, Klaus Solbach

Abstract:

In Ultra high-field MRI scanners (3T and higher), parallel RF transmission techniques using multiple RF chains with multiple transmit elements are a promising approach to overcome the high-field MRI challenges in terms of inhomogeneity in the RF magnetic field and SAR. However, mutual coupling between the transmit array elements disturbs the desirable independent control of the RF waveforms for each element. This contribution demonstrates a 18 dB improvement of decoupling (isolation) performance due to the very low output impedance of our 1 kW power amplifier.

Keywords: EM coupling, Inter-element isolation, Magnetic resonance imaging (MRI), Parallel Transmit.

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2808 Power Optimization Techniques in FPGA Devices: A Combination of System- and Low-Levels

Authors: Pawel P. Czapski, Andrzej Sluzek

Abstract:

This paper presents preliminary results regarding system-level power awareness for FPGA implementations in wireless sensor networks. Re-configurability of field programmable gate arrays (FPGA) allows for significant flexibility in its applications to embedded systems. However, high power consumption in FPGA becomes a significant factor in design considerations. We present several ideas and their experimental verifications on how to optimize power consumption at high level of designing process while maintaining the same energy per operation (low-level methods can be used additionally). This paper demonstrates that it is possible to estimate feasible power consumption savings even at the high level of designing process. It is envisaged that our results can be also applied to other embedded systems applications, not limited to FPGA-based.

Keywords: Power optimization, FPGA, system-level designing, wireless sensor networks.

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2807 Low Frequency Noise Behavior of Independent Gate Junctionless FinFET

Authors: A. Kamath, Z. X. Chen, C. J. Gu, F. Zheng, X. P. Wang, N. Singh, G-Q. Lo

Abstract:

In this paper we use low frequency noise analysis to understand and map the current conduction path in a multi gate junctionless FinFET.  The device used in this study behaves as a gated resistor and shows excellent short channel effect suppression due to its multi gate structure. Generally for a bulk conduction device like the junctionless device studied in this work, the low frequency noise can be modelled using the mobility fluctuation model; however for this device we can also see the effect of carrier fluctuations on the LFN characteristic. The noise characteristic at different gate bias and also the possible location of the traps is explained.

Keywords: LFN analysis, junctionless, Current conduction path, FinFET.

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2806 Array Signal Processing: DOA Estimation for Missing Sensors

Authors: Lalita Gupta, R. P. Singh

Abstract:

Array signal processing involves signal enumeration and source localization. Array signal processing is centered on the ability to fuse temporal and spatial information captured via sampling signals emitted from a number of sources at the sensors of an array in order to carry out a specific estimation task: source characteristics (mainly localization of the sources) and/or array characteristics (mainly array geometry) estimation. Array signal processing is a part of signal processing that uses sensors organized in patterns or arrays, to detect signals and to determine information about them. Beamforming is a general signal processing technique used to control the directionality of the reception or transmission of a signal. Using Beamforming we can direct the majority of signal energy we receive from a group of array. Multiple signal classification (MUSIC) is a highly popular eigenstructure-based estimation method of direction of arrival (DOA) with high resolution. This Paper enumerates the effect of missing sensors in DOA estimation. The accuracy of the MUSIC-based DOA estimation is degraded significantly both by the effects of the missing sensors among the receiving array elements and the unequal channel gain and phase errors of the receiver.

Keywords: Array Signal Processing, Beamforming, ULA, Direction of Arrival, MUSIC

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2805 Facilitating a Cyber-Enabled Fraud Using the O.MG Cable to Incriminate the Victim

Authors: Damola O. Lawal, David W. Gresty, Diane E. Gan, Louise Hewitt

Abstract:

This paper investigates the feasibility of using a programmable USB such as the O.MG Cable to perform a file tampering attack. Here, the O.MG Cable, an apparently harmless mobile device charger is used in an unauthorised way, to alter the content of a file (an accounts record-January_Contributions.xlsx). The aim is to determine if a forensics analyst can reliably determine who has altered the target file; the O.MG Cable or the user of the machine. This work highlights some of the traces of the O.MG Cable left behind on the target computer itself such as the Product ID (PID) and Vendor ID (ID). Also discussed is the O.MG Cable’s behaviour during the experiments. We determine if a forensics analyst could identify if any evidence has been left behind by the programmable device on the target file once it has been removed from the computer to establish if the analyst would be able to link the traces left by the O.MG Cable to the file tampering. It was discovered that the forensic analyst might mistake the actions of the O.MG Cable for the computer users. Experiments carried out in this work could further the discussion as to whether an innocent user could be punished for the unauthorised changes made by a programmable device.

Keywords: O.MG Cable, programmable USB, file tampering attack, digital evidence credibility, miscarriage of justice, cyber fraud.

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2804 Fully Parameterizable FPGA based Crypto-Accelerator

Authors: Iqbalur Rahman, Miftahur Rahman, Abul L Haque, Mostafizur Rahman,

Abstract:

In this paper, RSA encryption algorithm and its hardware implementation in Xilinx-s Virtex Field Programmable Gate Arrays (FPGA) is analyzed. The issues of scalability, flexible performance, and silicon efficiency for the hardware acceleration of public key crypto systems are being explored in the present work. Using techniques based on the interleaved math for exponentiation, the proposed RSA calculation architecture is compared to existing FPGA-based solutions for speed, FPGA utilization, and scalability. The paper covers the RSA encryption algorithm, interleaved multiplication, Miller Rabin algorithm for primality test, extended Euclidean math, basic FPGA technology, and the implementation details of the proposed RSA calculation architecture. Performance of several alternative hardware architectures is discussed and compared. Finally, conclusion is drawn, highlighting the advantages of a fully flexible & parameterized design.

Keywords: Crypto Accelerator, FPGA, Public Key Cryptography, RSA.

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2803 Comparative Study of Al2O3 and HfO2 as Gate Dielectric on AlGaN/GaN MOSHEMTs

Authors: K. Karami, S. Hassan, S. Taking, A. Ofiare, A. Dhongde, A. Al-Khalidi, E. Wasige

Abstract:

We have made a comparative study on the influence of Al2O3 and HfO2 grown using Atomic Layer Deposition (ALD) technique as dielectric in the AlGaN/GaN metal oxide semiconductor high electron mobility transistor (MOS-HEMT) structure. Five samples consisting of 20 nm and 10 nm each of A2lO3 and HfO2 respectively and a Schottky gate HEMT, were fabricated and measured. The threshold voltage shifts towards negative by 0.1 V and 1.8 V for 10 nm thick HfO2 and 10 nm thick Al2O3 gate dielectric layers, respectively. The negative shift for the 20 nm HfO2 and 20 nm Al2O3 were 1.2 V and 4.9 V, respectively. Higher gm/IDS (transconductance to drain current) ratio was also obtained in HfO2 than Al2O3. With both materials as dielectric, a significant reduction in the gate leakage current in the order of 104 was obtained compared to the sample without the dielectric material.

Keywords: AlGaN/GaN HEMTs, Al2O3, HfO2, MOSHEMTs.

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2802 Circular Patch Microstrip Array Antenna for KU-band

Authors: T.F.Lai, Wan Nor Liza Mahadi, Norhayati Soin

Abstract:

This paper present a circular patch microstrip array antenna operate in KU-band (10.9GHz – 17.25GHz). The proposed circular patch array antenna will be in light weight, flexible, slim and compact unit compare with current antenna used in KU-band. The paper also presents the detail steps of designing the circular patch microstrip array antenna. An Advance Design System (ADS) software is used to compute the gain, power, radiation pattern, and S11 of the antenna. The proposed Circular patch microstrip array antenna basically is a phased array consisting of 'n' elements (circular patch antennas) arranged in a rectangular grid. The size of each element is determined by the operating frequency. The incident wave from satellite arrives at the plane of the antenna with equal phase across the surface of the array. Each 'n' element receives a small amount of power in phase with the others. There are feed network connects each element to the microstrip lines with an equal length, thus the signals reaching the circular patches are all combined in phase and the voltages add up. The significant difference of the circular patch array antenna is not come in the phase across the surface but in the magnitude distribution.

Keywords: Circular patch microstrip array antenna, gain, radiation pattern, S-Parameter.

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2801 60 GHz Multi-Sector Antenna Array with Switchable Radiation-Beams for Small Cell 5G Networks

Authors: N. Ojaroudi Parchin, H. Jahanbakhsh Basherlou, Y. Al-Yasir, A. M. Abdulkhaleq, R. A. Abd-Alhameed, P. S. Excell

Abstract:

A compact design of multi-sector patch antenna array for 60 GHz applications is presented and discussed in details. The proposed design combines five 1x8 linear patch antenna arrays, referred to as sectors, in a multi-sector configuration. The coaxial-fed radiation elements of the multi-sector array are designed on 0.2 mm Rogers RT5880 dielectrics. The array operates in the frequency range of 58-62 GHz and provides switchable directional/omnidirectional radiation beams with high gain and high directivity characteristics. The designed multi-sector array exhibits good performances and could be used in the fifth generation (5G) cellular networks.

Keywords: MM-wave communications, multi-sector array, patch antenna, small cell networks.

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2800 A 4-Element Corporate Series Feed Millimeter-Wave Microstrip Antenna Array for 5G Applications

Authors: G. Viswanadh Raviteja

Abstract:

In this paper, a microstrip antenna array is designed for 5G applications. A corporate series feed is considered to operate with a center frequency between 27 to 28 GHz to be able to cover the 5G frequency bands 24.25-27.5 GHz, 26.5-29.5 GHz and 27.5-28.35 GHz. The substrate is taken to be Rogers RT/Duroid 6002. The corporate series 5G antenna array is designed stage by stage by taking into consideration a conventional antenna designed at 28 GHz, thereby constructing the 2X1 antenna array before arriving at the final design structure of 4-element corporate series feed antenna array. The discussions concerning S11 parameter, gain and voltage standing wave ratio (VSWR) for the design structures are considered and all the important findings are tabulated. The proposed antenna array’s S11 parameter was found to be -29.00 dB at a frequency of 27.39 GHz with a good directional gain of 12.12 dB.

Keywords: Corporate series feed, millimeter wave antenna array, 5G applications, millimeter-wave (mm-wave) applications

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2799 Very High Speed Data Driven Dynamic NAND Gate at 22nm High K Metal Gate Strained Silicon Technology Node

Authors: Shobha Sharma, Amita Dev

Abstract:

Data driven dynamic logic is the high speed dynamic circuit with low area. The clock of the dynamic circuit is removed and data drives the circuit instead of clock for precharging purpose. This data driven dynamic nand gate is given static forward substrate biasing of Vsupply/2 as well as the substrate bias is connected to the input data, resulting in dynamic substrate bias. The dynamic substrate bias gives the shortest propagation delay with a penalty on the power dissipation. Propagation delay is reduced by 77.8% compared to the normal reverse substrate bias Data driven dynamic nand. Also dynamic substrate biased D3nand’s propagation delay is reduced by 31.26% compared to data driven dynamic nand gate with static forward substrate biasing of Vdd/2. This data driven dynamic nand gate with dynamic body biasing gives us the highest speed with no area penalty and finds its applications where power penalty is acceptable. Also combination of Dynamic and static Forward body bias can be used with reduced propagation delay compared to static forward biased circuit and with comparable increase in an average power. The simulations were done on hspice simulator with 22nm High-k metal gate strained Si technology HP models of Arizona State University, USA.

Keywords: Data driven nand gate, dynamic substrate biasing, nand gate, static substrate biasing.

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2798 Thinned Elliptical Cylindrical Antenna Array Synthesis Using Particle Swarm Optimization

Authors: Rajesh Bera, Durbadal Mandal, Rajib Kar, Sakti P. Ghoshal

Abstract:

This paper describes optimal thinning of an Elliptical  Cylindrical Array (ECA) of uniformly excited isotropic antennas  which can generate directive beam with minimum relative Side Lobe  Level (SLL). The Particle Swarm Optimization (PSO) method, which  represents a new approach for optimization problems in  electromagnetic, is used in the optimization process. The PSO is used  to determine the optimal set of ‘ON-OFF’ elements that provides a  radiation pattern with maximum SLL reduction. Optimization is done  without prefixing the value of First Null Beam Width (FNBW). The  variation of SLL with element spacing of thinned array is also  reported. Simulation results show that the number of array elements  can be reduced by more than 50% of the total number of elements in  the array with a simultaneous reduction in SLL to less than -27dB.

 

Keywords: Thinned array, Particle Swarm Optimization, Elliptical Cylindrical Array, Side Lobe Label.

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2797 PIN-Diode Based Slotted Reconfigurable Multiband Antenna Array for Vehicular Communication

Authors: Gaurav Upadhyay, Nand Kishore, Prashant Ranjan, Shivesh Tripathi, V. S. Tripathi

Abstract:

In this paper, a patch antenna array design is proposed for vehicular communication. The antenna consists of 2-element patch array. The antenna array is operating at multiple frequency bands. The multiband operation is achieved by use of slots at proper locations at the patch. The array is made reconfigurable by use of two PIN-diodes. The antenna is simulated and measured in four states of diodes i.e. ON-ON, ON-OFF, OFF-ON, and OFF-OFF. In ON-ON state of diodes, the resonant frequencies are 4.62-4.96, 6.50-6.75, 6.90-7.01, 7.34-8.22, 8.89-9.09 GHz. In ON-OFF state of diodes, the measured resonant frequencies are 4.63-4.93, 6.50-6.70 and 7.81-7.91 GHz. In OFF-ON states of diodes the resonant frequencies are 1.24-1.46, 3.40-3.75, 5.07-5.25 and 6.90-7.20 GHz and in the OFF-OFF state of diodes 4.49-4.75 and 5.61-5.98 GHz. The maximum bandwidth of the proposed antenna is 16.29%. The peak gain of the antenna is 3.4 dB at 5.9 GHz, which makes it suitable for vehicular communication.

Keywords: Antenna, array, reconfigurable, vehicular.

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2796 Magnetization of Thin-Film Permalloy Ellipses used for Programmable Motion of Magnetic Particles

Authors: P. Warnicke

Abstract:

Simulations of magnetic microstructure in elliptical Permalloy elements used for controlled motion of magnetic particles are discussed. The saturating field of the elliptical elements was studied with respect to lateral dimensions for one-vortex, cross-tie, diamond and double-diamond states as initial zero-field domain configurations. With aspect ratio of 1:3 the short axis was varied from 125 nm to 1000 nm, whereas the thickness was kept constant at 50 nm.

Keywords: Domain structure, magnetization, micromagnetics, Permalloy.

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2795 Hybrid Antenna Array with the Bowtie Elements for Super-Resolution and 3D Scanning Radars

Authors: Somayeh Komeylian

Abstract:

The antenna arrays for the entire 3D spherical coverage have been developed for their potential use in variety of applications such as radars and body-worn devices of the body area networks. In this study, we have rigorously revamped the hybrid antenna array using the optimum geometry of bowtie elements for achieving a significant improvement in the angular discrimination capability as well as in separating two adjacent targets. In this scenario, we have analogously investigated the effectiveness of increasing the virtual array length in fostering and enhancing the directivity and angular resolution in the 10 GHz frequency. The simulation results have extensively verified that the proposed antenna array represents a drastic enhancement in terms of size, directivity, side lobe level (SLL) and, especially resolution compared with the other available geometries. We have also verified that the maximum directivities of the proposed hybrid antenna array represent the robustness to the all  variations, which is accompanied by the uniform 3D scanning characteristic.

Keywords: Bowtie antenna, hybrid antenna array, array signal processing, body area networks.

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2794 Temperature Variation Effects on I-V Characteristics of Cu-Phthalocyanine based OFET

Authors: Q. Zafar, R. Akram, Kh.S. Karimov, T.A. Khan, M. Farooq, M.M. Tahir

Abstract:

In this study we present the effect of elevated temperatures from 300K to 400K on the electrical properties of copper Phthalocyanine (CuPc) based organic field effect transistors (OFET). Thin films of organic semiconductor CuPc (40nm) and semitransparent Al (20nm) were deposited in sequence, by vacuum evaporation on a glass substrate with previously deposited Ag source and drain electrodes with a gap of 40 μm. Under resistive mode of operation, where gate was suspended it was observed that drain current of this organic field effect transistor (OFET) show an increase with temperature. While in grounded gate condition metal (aluminum) – semiconductor (Copper Phthalocyanine) Schottky junction dominated the output characteristics and device showed switching effect from low to high conduction states like Zener diode at higher bias voltages. This threshold voltage for switching effect has been found to be inversely proportional to temperature and shows an abrupt decrease after knee temperature of 360K. Change in dynamic resistance (Rd = dV/dI) with respect to temperature was observed to be -1%/K.

Keywords: Copper Phthalocyanine, Metal-Semiconductor Schottky Junction, Organic Field Effect Transistor, Switching effect, Temperature Sensor

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2793 An Efficient Hardware Implementation of Extended and Fast Physical Addressing in Microprocessor-Based Systems Using Programmable Logic

Authors: Mountassar Maamoun, Abdelhamid Meraghni, Abdelhalim Benbelkacem, Daoud Berkani

Abstract:

This paper describes an efficient hardware implementation of a new technique for interfacing the data exchange between the microprocessor-based systems and the external devices. This technique, based on the use of software/hardware system and a reduced physical address, enlarges the interfacing capacity of the microprocessor-based systems, uses the Direct Memory Access (DMA) to increases the frequency of the new bus, and improves the speed of data exchange. While using this architecture in microprocessor-based system or in computer, the input of the hardware part of our system will be connected to the bus system, and the output, which is a new bus, will be connected to an external device. The new bus is composed of a data bus, a control bus and an address bus. A Xilinx Integrated Software Environment (ISE) 7.1i has been used for the programmable logic implementation.

Keywords: Interfacing, Software/hardware System, CPLD, programmable logic, DMA.

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2792 Design and Implementation of Quantum Cellular Automata Based Novel Adder Circuits

Authors: Santanu Santra, Utpal Roy

Abstract:

The most important mathematical operation for any computing system is addition. An efficient adder can be of greater assistance in designing of any arithmetic circuits. Quantum-dot Cellular Automata (QCA) is a promising nanotechnology to create electronic circuits for computing devices and suitable candidate for next generation of computing systems. The article presents a modest approach to implement a novel XOR gate. The gate is simple in structure and powerful in terms of implementing digital circuits. By applying the XOR gate, the hardware requirement for a QCA circuit can be decrease and circuits can be simpler in level, clock phase and cell count. In order to verify the functionality of the proposed device some implementation of Half Adder (HA) and Full Adder (FA) is checked by means of computer simulations using QCA-Designer tool. Simulation results and physical relations confirm its usefulness in implementing every digital circuit.

Keywords: Clock, Computing system, Majority gate, QCA, QCA Designer.

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2791 Towards Self-ware via Swarm-Array Computing

Authors: Blesson Varghese, Gerard McKee

Abstract:

The work reported in this paper proposes Swarm-Array computing, a novel technique inspired by swarm robotics, and built on the foundations of autonomic and parallel computing. The approach aims to apply autonomic computing constructs to parallel computing systems and in effect achieve the self-ware objectives that describe self-managing systems. The constitution of swarm-array computing comprising four constituents, namely the computing system, the problem/task, the swarm and the landscape is considered. Approaches that bind these constituents together are proposed. Space applications employing FPGAs are identified as a potential area for applying swarm-array computing for building reliable systems. The feasibility of a proposed approach is validated on the SeSAm multi-agent simulator and landscapes are generated using the MATLAB toolkit.

Keywords: Swarm-Array computing, Autonomic computing, landscapes.

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2790 Design of a CMOS Highly Linear Front-end IC with Auto Gain Controller for a Magnetic Field Transceiver

Authors: Yeon-kug Moon, Kang-Yoon Lee, Yun-Jae Won, Seung-Ok Lim

Abstract:

This paper describes a low-voltage and low-power channel selection analog front end with continuous-time low pass filters and highly linear programmable gain amplifier (PGA). The filters were realized as balanced Gm-C biquadratic filters to achieve a low current consumption. High linearity and a constant wide bandwidth are achieved by using a new transconductance (Gm) cell. The PGA has a voltage gain varying from 0 to 65dB, while maintaining a constant bandwidth. A filter tuning circuit that requires an accurate time base but no external components is presented. With a 1-Vrms differential input and output, the filter achieves -85dB THD and a 78dB signal-to-noise ratio. Both the filter and PGA were implemented in a 0.18um 1P6M n-well CMOS process. They consume 3.2mW from a 1.8V power supply and occupy an area of 0.19mm2.

Keywords: component ; Channel selection filters, DC offset, programmable gain amplifier, tuning circuit

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2789 Coupled Multifield Analysis of Piezoelectrically Actuated Microfluidic Device for Transdermal Drug Delivery Applications

Authors: Muhammad Waseem Ashraf, Shahzadi Tayyaba, Nitin Afzulpurkar, Asim Nisar, Adisorn Tuantranont, Erik L J Bohez

Abstract:

In this paper, design, fabrication and coupled multifield analysis of hollow out-of-plane silicon microneedle array with piezoelectrically actuated microfluidic device for transdermal drug delivery (TDD) applications is presented. The fabrication process of silicon microneedle array is first done by series of combined isotropic and anisotropic etching processes using inductively coupled plasma (ICP) etching technology. Then coupled multifield analysis of MEMS based piezoelectrically actuated device with integrated 2×2 silicon microneedle array is presented. To predict the stress distribution and model fluid flow in coupled field analysis, finite element (FE) and computational fluid dynamic (CFD) analysis using ANSYS rather than analytical systems has been performed. Static analysis and transient CFD analysis were performed to predict the fluid flow through the microneedle array. The inlet pressure from 10 kPa to 150 kPa was considered for static CFD analysis. In the lumen region fluid flow rate 3.2946 μL/min is obtained at 150 V for 2×2 microneedle array. In the present study the authors have performed simulation of structural, piezoelectric and CFD analysis on three dimensional model of the piezoelectrically actuated mcirofluidic device integrated with 2×2 microneedle array.

Keywords: Coupled multifield, finite element analysis, hollow silicon microneedle, transdermal drug delivery.

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2788 A Programmable FSK-Modulator in 350nm CMOS Technology

Authors: Nasir Mehmood, Saad Rahman, Vinodh Ravinath, Mahesh Balaji

Abstract:

This paper describes the design of a programmable FSK-modulator based on VCO and its implementation in 0.35m CMOS process. The circuit is used to transmit digital data at 100Kbps rate in the frequency range of 400-600MHz. The design and operation of the modulator is discussed briefly. Further the characteristics of PLL, frequency synthesizer, VCO and the whole design are elaborated. The variation among the proposed and tested specifications is presented. Finally, the layout of sub-modules, pin configurations, final chip and test results are presented.

Keywords: FSK Modulator, CMOS, VCO, Phase Locked Loop, Frequency Synthesizer.

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