Search results for: Silicon Nanowire

Authors: Satoru Kaneko, Takeshi Ito, Kensuke Akiyama, Manabu Yasui, Chihiro Kato, Satomi Tanaka, Yasuo Hirabayashi, Takeshi Ozawa, Akira Matsuno, Takashi Nire, Hiroshi Funakubo, Mamoru Yoshimoto

Abstract:

As application of re-activation of backside on power device Insulated Gate Bipolar Transistor (IGBT), laser annealing was employed to irradiate amorphous silicon substrate, and resistivities were measured using four point probe measurement. For annealing the amorphous silicon two lasers were used at wavelength of visible green (532 nm) together with Infrared (793 nm). While the green laser efficiently increased temperature at top surface the Infrared laser reached more deep inside and was effective for melting the top surface. A finite element method was employed to evaluate time dependent thermal distribution in silicon substrate.

Keywords: laser, annealing, silicon, recrystallization, thermal distribution, resistivity, finite element method, absorption, melting point, latent heat of fusion.

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Authors: J. H. Choi, S. J. Kim, M. S. Jung, S. J. Kim, S. J. Joo, S. C. Kim

Abstract:

There are a many of needs for the development of SiC-based hydrogen sensor for harsh environment applications. We fabricated and investigated Pd/Ta2O5/SiC-based hydrogen sensors with MOS capacitor structure for high temperature process monitoring and leak detection applications in such automotive, chemical and petroleum industries as well as direct monitoring of combustion processes. In this work, we used silicon carbide (SiC) as a substrate to replace silicon which operating temperatures are limited to below 200°C. Tantalum oxide was investigated as dielectric layer which has high permeability for hydrogen gas and high dielectric permittivity, compared with silicon dioxide or silicon nitride. Then, electrical response properties, such as I-V curve and dependence of capacitance on hydrogen concentrations were analyzed in the temperature ranges of room temperature to 500°C for performance evaluation of the sensor.

Keywords: High temperature, hydrogen sensor, SiC, Ta2O5 dielectric layer.

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Authors: Abbas Ghanbari-Malidareh

Abstract:

Silicon is a beneficial element for plant growth. It helps plants to overcome multiple stresses, alleviates metal toxicity and improves nutrient imbalance. Field experiment was conducted as split-split plot arranged in a randomized complete block design with four replications. Irrigation system include continues flooding and deficit as main plots and nitrogen rates N0, N46, N92, and N138 kg/ha as sub plots and silicon rates Si0 & Si500 kg/ha as sub-subplots. Results indicate that grain yield had not significant difference between irrigation systems. Flooding irrigation had higher biological yield than deficit irrigation whereas, no significant difference in grain and straw yield. Nitrogen application increased grain, biological and straw yield. Silicon application increased grain, biological and straw yield but, decreased harvest index. Flooding irrigation had higher number of total tillers / hill than deficit irrigation, but deficit irrigation had higher number of fertile tillers / hill than flooding irrigation. Silicon increased number of filled spikelet and decreased blank spikelet. With high nitrogen application decreased 1000-grain weight. It can be concluded that if the nitrogen application was high and water supplied was available we could have silicon application until increase grain yield.

Keywords: Grain yield, Irrigation, Nitrogen, Rice, Silicon.

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Authors: Stepan Petrosyan, Ashkhen Yesayan, Suren Nersesyan

Abstract:

We have developed an analytic model for the radial pn-junction in a nanowire (NW) core-shell structure utilizing as a new building block in different semiconductor devices. The potential distribution through the p-n-junction is calculated and the analytical expressions are derived to compute the depletion region widths. We show that the widths of space charge layers, surrounding the core, are the functions of core radius, which is the manifestation of so called classical size effect. The relationship between the depletion layer width and the built-in potential in the asymptotes of infinitely large core radius transforms to square-root dependence specific for conventional planar p-n-junctions. The explicit equation is derived to compute the capacitance of radial p-n-junction. The current-voltage behavior is also carefully determined taking into account the “short base" effects.

Keywords: Snanowire, p-n- junction, barrier capacitance, high injection.

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Authors: Woei-Shyan Lee, Shuo-Ling Chang

Abstract:

The nanoindentation behaviour and phase transformation of annealed single-crystal silicon wafers are examined. The silicon specimens are annealed at temperatures of 250, 350 and 450ºC, respectively, for 15 minutes and are then indented to maximum loads of 30, 50 and 70 mN. The phase changes induced in the indented specimens are observed using transmission electron microscopy (TEM) and micro-Raman scattering spectroscopy (RSS). For all annealing temperatures, an elbow feature is observed in the unloading curve following indentation to a maximum load of 30 mN. Under higher loads of 50 mN and 70 mN, respectively, the elbow feature is replaced by a pop-out event. The elbow feature reveals a complete amorphous phase transformation within the indented zone, whereas the pop-out event indicates the formation of Si XII and Si III phases. The experimental results show that the formation of these crystalline silicon phases increases with an increasing annealing temperature and indentation load. The hardness and Young’s modulus both decrease as the annealing temperature and indentation load are increased.

Keywords: Nanoindentation, silicon, phase transformation, amorphous, annealing.

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Authors: P. Nadimi, D. D. Caviglia, E. Di Zitti

Abstract:

We propose an all optical flip-flop circuit composedof two Silicon-on-insulator microring resonators coupled to straightwaveguides by exploiting the optical bistability behavior due to thenonlinear Kerr effect. We used the transfer matrix analysis toinvestigate continuous wave propagation through microrings, as wellwe considered the nonlinear switching characteristics of an opticaldevice using a double-coupler silicon ring resonator in presence ofthe Kerr nonlinearity, thus obtaining the bistability behavior of theoutput port, the drop port and also inside the silicon microringresonator. It is shown that the bistability behavior depends on thecontrol of the input wavelength.KeywordsAll optical flip-flops, Kerr effect, microringresonator, optical bistability.

Keywords: All optical flip-flops, Kerr effect, microring resonator, optical bistability.

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Authors: Janet Amiri, Shekoofeh Entesari, Kourosh Delavar, Mahshid Saadatmand, Nasrin Aghamohammad Rafie

Abstract:

The beneficial effects of Si are mainly associated with its high deposition in plant tissue and enhancing their strength and rigidity. We investigated the role of Si against cadmium stress in (Echium C) in house green condition. When the seventh leaves was be appeared, plants were pretreated with five levels of Si: 0, 0.2, 0.5, 0.7and 1.5 mM Si (as sodium trisilicate, Na2(SiO2)3) and after that plants were treated with two levels of Cd (30 and 90 mM). The effects of Silicon and Cd were investigated on some physiological and biochemical parameters such as: lipid peroxidation (malondialdehyde (MDA) and other aldehydes, antocyanin and flavonoid content. Our results showed that Cd significantly increased MDA, other aldehydes, antocyanin and flavonoids content in Echium and silicon offset the negative effect and increased tolerance of Echium against Cd stress. From this results we concluded that Si increase membrane integrity and antioxidative ability in this plant against cd stress.

Keywords: Silicon, Cadmium, Echium, MDA, antocyanin, flavonoid

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Authors: Jyoti Narayan, S. Choudhary

Abstract:

Nanowire arrays of copper with uniform diameters have been synthesized by potentiostatic electrochemical metal deposition (EMD) of copper sulphate and potassium chloride solution within the nano-channels of porous Indium-Tin Oxide (ITO), also known as Tin doped Indium Oxide templates. The nanowires developed were fairly continuous with diameters ranging from 110-140 nm along the entire length. Single as well as poly-crystalline copper wires have been prepared by application of appropriate potential during the EMD process. Scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), small angle electron diffraction (SAED) and atomic force microscopy (AFM) were used to characterize the synthesized nano wires at room temperature. The electrochemical response of synthesized products was evaluated by cyclic voltammetry while surface energy analysis was carried out using a Goniometer.

Keywords: Electro-deposition, Metallic nano-wires, Nanomaterials, Template synthesis

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Authors: Alexey P. Antropov, Alexander V. Ragutkin, Nicolay A. Yashtulov

Abstract:

The original controlled technology for power active nanocomposite membrane-electrode assembly engineering on the basis of porous silicon is presented. The functional nanocomposites were studied by electron microscopy and cyclic voltammetry methods. The application possibility of the obtained nanocomposites as high performance renewable energy sources for micro-power electronic devices is demonstrated.

Keywords: Cyclic voltammetry, electron microscopy, nanotechnology, platinum-palladium nanocomposites, porous silicon, power activity, renewable energy sources.

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Authors: M. Bagci, H. Imrek, Omari M. Khalfan

Abstract:

Materials added to the matrix help improving operating properties of a composite. This experimental study has targeted to investigate this aim where Silicon Oxide particles were added to glass fibre and epoxy resin at an amount of 15% to the main material to obtain a sort of new composite material. Erosive wear behavior of epoxy-resin dipped composite materials reinforced with glass fibre and Silicon Oxide under three different impingement angles (30°, 60° and 90°), three different impact velocities (23, 34 and 53 m/s), two different angular Aluminum abrasive particle sizes (approximately 200 and 400 μm) and the fibre orientation of 45° (45/-45) were investigated. In the test results, erosion rates were obtained as functions of impingement angles, impact velocities, particle sizes and fibre orientation. Moreover, materials with addition of Silicon Oxide filler material exhibited lower wear as compared to neat materials with no added filler material. In addition, SEM views showing worn out surfaces of the test specimens were scrutinized.

Keywords: Erosive wear, fibre orientation, GF/EP, silicon oxide.

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Authors: Jessie Yiying Quah, Vivian Netto, Jack Sheng Kee, Eric Mouchel La Fosse, Mi Kyoung Park

Abstract:

We present a dextran modified silicon microring resonator sensor for high density antibody immobilization. An array of sensors consisting of three sensor rings and a reference ring was fabricated and its surface sensitivity and the limit of detection were obtained using polyelectrolyte multilayers. The mass sensitivity and the limit of detection of the fabricated sensor ring are 0.35 nm/ng mm-2 and 42.8 pg/mm2 in air, respectively. Dextran modified sensor surface was successfully prepared by covalent grafting of oxidized dextran on 3-aminopropyltriethoxysilane (APTES) modified silicon sensor surface. The antibody immobilization on hydrogel dextran matrix improves 40% compared to traditional antibody immobilization method via APTES and glutaraldehyde linkage.

Keywords: Antibody immobilization, Dextran, Immunosensor, Label-free detection, Silicon micro-ring resonator

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Authors: Luc Conti, Dimitry Dumont-Fillon, Harald van Lintel, Eric Chappel

Abstract:

Flow control valves comprise a silicon flexible membrane that deflects against a substrate, usually made of glass, containing pillars, an outlet hole, and anti-stiction features. However, there is a strong interest in using silicon instead of glass as substrate material, as it would simplify the process flow by allowing the use of well controlled anisotropic etching. Moreover, specific devices demanding a bending of the substrate would also benefit from the inherent outstanding mechanical strength of monocrystalline silicon. Unfortunately, direct Si-Si bonding is not easily achieved with highly structured wafers since residual stress may prevent the good adhesion between wafers. Using a thermoplastic polymer, such as parylene, as intermediate layer is not well adapted to this design as the wafer-to-wafer alignment is critical. An alternative anodic bonding method using an intermediate borosilicate layer has been successfully tested. This layer has been deposited onto the silicon substrate. The bonding recipe has been adapted to account for the presence of the SOI buried oxide and intermediate glass layer in order not to exceed the breakdown voltage. Flow control valves dedicated to infusion of viscous fluids at very high pressure have been made and characterized. The results are compared to previous data obtained using the standard anodic bonding method.

Keywords: Anodic bonding, evaporated glass, microfluidic valve, drug delivery.

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Authors: Ankita Gaur, Mouli Karmakar, Shyam

Abstract:

In this study, a silicon solar cell has been modeled and analyzed to enhance its performance by improving the optical properties using an anti-reflecting coating (ARC). The dynamic optical reflectance, transmittance along with the net transmissivity absorptivity product of each layer are assessed as per the diurnal variation of the angle of incidence using MATLAB 2019. The model is tested with various anti-reflective coatings and the performance has also been compared with uncoated cells. ARC improves the optical transmittance of the photon. Higher transmittance of ⁓96.57% with lowest reflectance of ⁓ 1.74% at 12.00 hours was obtained with MgF2 coated silicon cells. The electrical efficiency of the configured solar cell was evaluated for a composite climate of New Delhi, India, for all weather conditions. The annual electricity generation for anti-reflective coated and uncoated crystalline silicon PV Module was observed to be 103.14 KWh and 99.51 KWh, respectively.

Keywords: Anti-reflecting coating, electrical efficiency, reflectance, solar cell, transmittance.

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Authors: R. Karmouch

Abstract:

A thin gold metal layer was deposited on the top of silicon oxide films containing embedded Si nanocrystals (Si-nc). The sample was annealed in a gas containing nitrogen, and subsequently characterized by photoluminescence. We obtained 3-fold enhancement of photon emission from the Si-nc embedded in silicon dioxide covered with a Gold layer as compared with an uncovered sample. We attribute this enhancement to the increase of the spontaneous emission rate caused by the coupling of the Si-nc emitters with the surface plasmons (SP). The evolution of PL emission with laser irradiated time was also collected from covered samples, and compared to that from uncovered samples. In an uncovered sample, the PL intensity decreases with time, approximately with two decay constants. Although the decrease of the initial PL intensity associated with the increase of sample temperature under CW pumping is still observed in samples covered with a gold layer, this film significantly contributes to reduce the permanent deterioration of the PL intensity. The resistance to degradation of light-emitting silicon nanocrystals can be increased by SP coupling to suppress the permanent deterioration. Controlling the permanent photodeterioration can allow to perform a reliable optical gain measurement.

Keywords: Photodeterioration, Silicon Nanocrystals, Ion Implantation, Photoluminescence, Surface Plasmons.

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Authors: Emanuela Paranhos Lima, Vitaly Félix Rodríguez Esquerre

Abstract:

In this work, efficient directional coupler composed of dielectric waveguides and metallic film has been analyzed in details by simulations using finite element method (FEM). The structure consists of a step-index fiber with dielectric core, silica cladding, and a metal nanowire parallel to the core. The results show that an efficient conversion of optical dielectric modes to long range plasmonic is possible. Low insertion losses in conjunction with short coupling length and a broadband operation can be achieved under certain conditions. This kind of couplers has potential applications for the design of photonic integrated circuits for signal routing between dielectric/plasmonic waveguides, sensing, lithography, and optical storage systems. A high efficient focusing of light in a very small region can be obtained.

Keywords: Directional coupler, finite element method, metallic nanowire, plasmonic, surface plasmon polariton.

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Authors: Andrey V. Osipov, Sergey A. Kukushkin, Andrey V. Luk’yanov

Abstract:

A method is developed for the solid-phase synthesis of epitaxial layers when the substrate itself is involved into a topochemical reaction and the reaction product grows in the interior of substrate layer. It opens up new possibilities for the relaxation of the elastic energy due to the attraction of point defects formed during the topochemical reaction in anisotropic media. The presented method of silicon carbide (SiC) formation employs a topochemical reaction between the single-crystalline silicon (Si) substrate and gaseous carbon monoxide (CO). The corresponding theory of interaction of point dilatation centers in anisotropic crystals is developed. It is eliminated that the most advantageous location of the point defects is the direction (111) in crystals with cubic symmetry. The single-crystal SiC films with the thickness up to 200 nm have been grown on Si (111) substrates owing to the topochemical reaction with CO. Grown high-quality single-crystal SiC films do not contain misfit dislocations despite the huge lattice mismatch value of ~20%. Also the possibility of growing of thick wide-gap semiconductor films on these templates SiC/Si(111) and, accordingly, its integration into Si electronics, is demonstrated. Finally, the ab initio theory of SiC formation due to the topochemical reaction has been developed.

Keywords: Epitaxy, silicon carbide, topochemical reaction, wide-bandgap semiconductors.

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Authors: Shiyang Zhu, Guo-Qiang Lo, Dim-Lee Kwong

Abstract:

Although silicon photonic devices provide a significantly larger bandwidth and dissipate a substantially less power than the electronic devices, they suffer from a large size due to the fundamental diffraction limit and the weak optical response of Si. A potential solution is to exploit Si plasmonics, which may not only miniaturize the photonic device far beyond the diffraction limit, but also enhance the optical response in Si due to the electromagnetic field confinement. In this paper, we discuss and summarize the recently developed metal-insulator-Si-insulator-metal nanoplasmonic waveguide as well as various passive and active plasmonic components based on this waveguide, including coupler, bend, power splitter, ring resonator, MZI, modulator, detector, etc. All these plasmonic components are CMOS compatible and could be integrated with electronic and conventional dielectric photonic devices on the same SOI chip. More potential plasmonic devices as well as plasmonic nanocircuits with complex functionalities are also addressed.

Keywords: Silicon nanoplasmonics, Silicon nanophotonics, Onchip integration, CMOS

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Authors: A. A. Abaker Omer, H. B. Mohamed Balh, W. Liu, A. Abas, J. Yu, S. Li, W. Ma, W. El Kolaly, Y. Y. Ahmed Abuker

Abstract:

We have discovered an important technical solution that could make new approaches in the processing of wet silicon etching, especially in the production of photovoltaic cells. During its inferior light-trapping and structural properties, the inverted pyramid structure outperforms the conventional pyramid textures and black silicone. The traditional pyramid textures and black silicon can only be accomplished with more advanced lithography, laser processing, etc. Importantly, our data demonstrate the feasibility of an inverted pyramidal structure of silicon via one-step Cu-catalyzed chemical etching (CCCE) in Cu (NO₃)₂/HF/H₂O₂/H₂O solutions. The effects of etching time and reaction temperature on surface geometry and light trapping were systematically investigated. The conclusion shows that the inverted pyramid structure has ultra-low reflectivity of ~4.2% in the wavelength of 300~1000 nm; introduce of Cu particles can significantly accelerate the dissolution of the silicon wafer. The etching and the inverted pyramid structure formation mechanism are discussed. Inverted pyramid structure with outstanding anti-reflectivity includes useful applications throughout the manufacture of semi-conductive industry-compatible solar cells, and can have significant impacts on industry colleagues and populations.

Keywords: Cu-catalyzed chemical etching, inverted pyramid nanostructured, reflection, solar cells.

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Authors: V. Geza, J. Vencels, G. Zageris, S. Pavlovs

Abstract:

One of the most perspective methods to produce SoG-Si is refinement via metallurgical route. The most critical part of this route is refinement from boron and phosphorus. Therefore, a new approach could address this problem. We propose an approach of creating surface waves on silicon melt’s surface in order to enlarge its area and accelerate removal of boron via chemical reactions and evaporation of phosphorus. A two dimensional numerical model is created which includes coupling of electromagnetic and fluid dynamic simulations with free surface dynamics. First results show behaviour similar to experimental results from literature.

Keywords: Numerical modelling, silicon refinement, surface waves, VOF method.

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Authors: Li Long, Thomas Ortlepp

Abstract:

A theoretical model for the optimization of thermopile sensor performance is developed for thermoelectric-based infrared radiation detection. It is shown that the performance of polycrystalline silicon film thermopile sensor can be optimized according to the thermoelectric quality factor, sensor layer structure factor and sensor layout shape factor. Based on the properties of electrons, phonons, grain boundaries and their interactions, the thermoelectric quality factor of polycrystalline silicon is analyzed with the relaxation time approximation of Boltzmann transport equation. The model includes the effects of grain structure, grain boundary trap properties and doping concentration. The layer structure factor of sensor is analyzed with respect to infrared absorption coefficient. The effect of layout design is characterized with the shape factor, which is calculated for different sensor designs. Double layer polycrystalline silicon thermopile infrared sensors on suspended support membrane have been designed and fabricated with a CMOS-compatible process. The theoretical approach is confirmed with measurement results.

Keywords: Polycrystalline silicon film, relaxation time approximation, specific detectivity, thermal conductivity, thermopile infrared sensor.

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Authors: Fei Sun, Ning Duan, Guo-Qiang Lo

Abstract:

A silicon photomultiplier (SiPM) was designed, fabricated and characterized. The SiPM was based on SACM (Separation of Absorption, Charge and Multiplication) structure, which was optimized for blue light detection in application of positron emission tomography (PET). The achieved SiPM array has a high geometric fill factor of 64% and a low breakdown voltage of about 22V, while the temperature dependence of breakdown voltage is only 17mV/°C. The gain and photon detection efficiency of the device achieved were also measured under illumination of light at 405nm and 460nm wavelengths. The gain of the device is in the order of 10⁶. The photon detection efficiency up to 60% has been observed under 1.8V overvoltage.

Keywords: Photon Detection Efficiency, Positron Emission Tomography, Silicon Photomultiplier.

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Authors: Khamael M. Abualnaja, Lidija Šiller, Benjamin R. Horrocks

Abstract:

Alkylated silicon nanocrystals (C11-SiNCs) were prepared successfully by galvanostatic etching of p-Si(100) wafers followed by a thermal hydrosilation reaction of 1-undecene in refluxing toluene in order to extract C11-SiNCs from porous silicon. Erbium trichloride was added to alkylated SiNCs using a simple mixing chemical route. To the best of our knowledge, this is the first investigation on mixing SiNCs with erbium ions (III) by this chemical method. The chemical characterization of C11-SiNCs and their mixtures with Er3+(Er/C11-SiNCs) were carried out using X-ray photoemission spectroscopy (XPS). The optical properties of C11- SiNCs and their mixtures with Er3+ were investigated using Raman spectroscopy and photoluminescence (PL). The erbium mixed alkylated SiNCs shows an orange PL emission peak at around 595 nm that originates from radiative recombination of Si. Er/C11-SiNCs mixture also exhibits a weak PL emission peak at 1536 nm that originates from the intra-4f transition in erbium ions (Er3+). The PL peak of Si in Er/C11-SiNCs mixture is increased in the intensity up to three times as compared to pure C11-SiNCs. The collected data suggest that this chemical mixing route leads instead to a transfer of energy from erbium ions to alkylated SiNCs.

Keywords: Photoluminescence, Silicon Nanocrystals, Erbium, Raman Spectroscopy.

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Authors: Loralee P. Potter, Peter J. Schubert

Abstract:

Solid-state hydrogen storage using catalytically-modified porous silicon can be rapidly charged at moderate pressures (8 bar) without exothermic runaway. Discharge requires temperatures of approximately 110oC, so for larger storage vessels a means is required for thermal energy to penetrate bulk storage media. This can be realized with low-density metal foams, such as Celmet™. This study explores several material and dimensional choices of the metal foam to produce rapid heating of bulk silicon particulates. Experiments run under vacuum and in a pressurized hydrogen environment bracket conditions of empty and full hydrogen storage vessels, respectively. Curve-fitting of the heating profiles at various distances from an external heat source is used to derive both a time delay and a characteristic time constant. System performance metrics of a hydrogen storage subsystem are derived from the experimental results. A techno-economic analysis of the silicon and metal foam provides comparison with other methods of storing hydrogen for mobile and portable applications. 

Keywords: conduction, convection, kinetics, fuel cell

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Authors: S. A. A. Oloomi , M. Omidpanah

Abstract:

Semiconductor materials with coatings have a wide range of applications in MEMS and NEMS. This work uses transfermatrix method for calculating the radiative properties. Dopped silicon is used and the coherent formulation is applied. The Drude model for the optical constants of doped silicon is employed. Results showed that for the visible wavelengths, more emittance occurs in greater concentrations and the reflectance decreases as the concentration increases. In these wavelengths, transmittance is negligible. Donars and acceptors act similar in visible wavelengths. The effect of wave interference can be understood by plotting the spectral properties such as reflectance or transmittance of a thin dielectric film versus the film thickness and analyzing the oscillations of properties due to constructive and destructive interferences. But this effect has not been shown at visible wavelengths. At room temperature, the scattering process is dominated by lattice scattering for lightly doped silicon, and the impurity scattering becomes important for heavily doped silicon when the dopant concentration exceeds1018cm-3 .

Keywords: Dopant Concentrations, Radiative Properties, Nanoscale Multilayer, Coherent Formulation, Visible Wavelengths

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Authors: Shiyang Zhu, Guo-Qiang Lo, Dim-Lee Kwong

Abstract:

We prove detailed analysis of a waveguide-based Schottky barrier photodetector (SBPD) where a thin silicide film is put on the top of a silicon-on-insulator (SOI) channel waveguide to absorb light propagating along the waveguide. Taking both the confinement factor of light absorption and the wall scanning induced gain of the photoexcited carriers into account, an optimized silicide thickness is extracted to maximize the effective gain, thereby the responsivity. For typical lengths of the thin silicide film (10-20 Ðçm), the optimized thickness is estimated to be in the range of 1-2 nm, and only about 50-80% light power is absorbed to reach the maximum responsivity. Resonant waveguide-based SBPDs are proposed, which consist of a microloop, microdisc, or microring waveguide structure to allow light multiply propagating along the circular Si waveguide beneath the thin silicide film. Simulation results suggest that such resonant waveguide-based SBPDs have much higher repsonsivity at the resonant wavelengths as compared to the straight waveguidebased detectors. Some experimental results about Si waveguide-based SBPD are also reported.

Keywords: Infrared detector, Schottky-barrier, Silicon waveguide, Silicon photonics

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Authors: Edison Muzenda

Abstract:

The aim of this study was to compare the solubility of selected volatile organic compounds in water and silicon oil using the simple static headspace method. The experimental design allowed equilibrium achievement within 30 – 60 minutes. Infinite dilution activity coefficients and Henry-s law constants for various organics representing esters, ketones, alkanes, aromatics, cycloalkanes and amines were measured at 303K. The measurements were reproducible with a relative standard deviation and coefficient of variation of 1.3x10-3 and 1.3 respectively. The static determined activity coefficients using shaker flasks were reasonably comparable to those obtained using the gas liquid - chromatographic technique and those predicted using the group contribution methods mainly the UNIFAC. Silicon oil chemically known as polydimethysiloxane was found to be better absorbent for VOCs than water which quickly becomes saturated. For example the infinite dilution mole fraction based activity coefficients of hexane is 0.503 and 277 000 in silicon oil and water respectively. Thus silicon oil gives a superior factor of 550 696. Henry-s law constants and activity coefficients at infinite dilution play a significant role in the design of scrubbers for abatement of volatile organic compounds from contaminated air streams. This paper presents the phase equilibrium of volatile organic compounds in very dilute aqueous and polymeric solutions indicating the movement and fate of chemical in air and solvent. The successful comparison of the results obtained here and those obtained using other methods by the same authors and in literature, means that the results obtained here are reliable.

Keywords: Abatement, absorbent, activity coefficients, equilibrium, Henry's law constant.

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Authors: Jaibir Sharma, Lee JaeWung, Merugu Srinivas, Navab Singh

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This paper presents thermal annealing de-wetting technique for the preparation of porous metal membrane for Thin Film Encapsulation (TFE) application. Thermal annealing de-wetting experimental results reveal that pore size formation in porous metal membrane depend upon i.e. 1. The substrate at which metal is deposited, 2. Melting point of metal used for porous metal cap layer membrane formation, 3. Thickness of metal used for cap layer, 4. Temperature used for formation of porous metal membrane. In order to demonstrate this technique, Silver (Ag) was used as a metal for preparation of porous metal membrane on amorphous silicon (a-Si) and silicon oxide. The annealing of the silver thin film of various thicknesses was performed at different temperature. Pores in porous silver film were analyzed using Scanning Electron Microscope (SEM). In order to check the usefulness of porous metal film for TFE application, the porous silver film prepared on amorphous silicon (a- Si) and silicon oxide was released using XeF2 and VHF, respectively. Finally, guide line and structures are suggested to use this porous membrane for robust TFE application.

Keywords: De-wetting, thermal annealing, metal, melting point, porous.

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Authors: Farid Jamali Sheini, Dilip S. Joag, Mahendra A. More

Abstract:

A simple approach is demonstrated for growing large scale, nearly vertically aligned ZnO nanowire arrays by thermal oxidation method. To reveal effect of temperature on growth and physical properties of the ZnO nanowires, gold coated zinc substrates were annealed at 300 °C and 400 °C for 4 hours duration in air. Xray diffraction patterns of annealed samples indicated a set of well defined diffraction peaks, indexed to the wurtzite hexagonal phase of ZnO. The scanning electron microscopy studies show formation of ZnO nanowires having length of several microns and average of diameter less than 500 nm. It is found that the areal density of wires is relatively higher, when the annealing is carried out at higher temperature i.e. at 400°C. From the field emission studies, the values of the turn-on and threshold field, required to draw emission current density of 10 μA/cm2 and 100 μA/cm2 are observed to be 1.2 V/μm and 1.7 V/μm for the samples annealed at 300 °C and 2.9 V/μm and 3.7 V/μm for that annealed at 400 °C, respectively. The field emission current stability, investigated over duration of more than 2 hours at the preset value of 1 μA, is found to be fairly good in both cases. The simplicity of the synthesis route coupled with the promising field emission properties offer unprecedented advantage for the use of ZnO field emitters for high current density applications.

Keywords: ZnO, Nanowires, Thermal oxidation, FieldEmission.

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Authors: Gul Afreen, Sreedevi Upadhyayula, Mahendra K. Sunkara

Abstract:

One-dimensional (1D) nanostructures like nanowires, nanotubes, and nanorods find variety of practical application owing to their unique physico-chemical properties. In this work, TiO₂ nanowires were synthesized by direct oxidation of titanium particles in a unique microwave plasma jet reactor. The prepared TiO₂ nanowires manifested the flexible features, and were characterized by using X-ray diffraction, Brunauer-Emmett-Teller (BET) surface area analyzer, UV-Visible and FTIR spectrophotometers, Scanning electron microscope, and Transmission electron microscope. Further, the photodegradation efficiency of these nanowires were tested against toxic organic dye like methylene blue (MB) and the results were compared with the commercial TiO₂. It was found that TiO₂ nanowires exhibited superior photocatalytic performance (89%) as compared to commercial TiO₂ (75%) after 60 min of reaction. This is attributed to the lower recombination rate and increased interfacial charge transfer in TiO₂ nanowire. Pseudo-first order kinetic modelling performed with the experimental results revealed that the rate constant of photodegradation in case of TiO₂ nanowire was 1.3 times higher than that of commercial TiO₂. Superoxide radical (O₂˙⁻) was found to be the major contributor in the photodegradation mechanism. Based on the trapping experiments, a plausible mechanism of the photocatalytic reaction is discussed.

Keywords: Heterogeneous catalysis, photodegradation, reactive oxygen species, TiO2 nanowires.

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Authors: F. Djeffal, N. Lakhdar, T. Bendib

Abstract:

The study of the transport coefficients in electronic devices is currently carried out by analytical and empirical models. This study requires several simplifying assumptions, generally necessary to lead to analytical expressions in order to study the different characteristics of the electronic silicon-based devices. Further progress in the development, design and optimization of Silicon-based devices necessarily requires new theory and modeling tools. In our study, we use the PSO (Particle Swarm Optimization) technique as a computational tool to develop analytical approaches in order to study the transport phenomenon of the electron in crystalline silicon as function of temperature and doping concentration. Good agreement between our results and measured data has been found. The optimized analytical models can also be incorporated into the circuits simulators to study Si-based devices without impact on the computational time and data storage.

Keywords: Particle Swarm, electron mobility, Si-based devices, Optimization.

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