Search results for: Field effect transistor.

Authors: Jianping Hu, Xiaolei Sheng

Abstract:

This paper introduces an adiabatic register file based on two-phase CPAL (Complementary Pass-Transistor Adiabatic Logic circuits) with power-gating scheme, which can operate on a single-phase power clock. A 32×32 single-phase adiabatic register file with power-gating scheme has been implemented with TSMC 0.18μm CMOS technology. All the circuits except for the storage cells employ two-phase CPAL circuits, and the storage cell is based on the conventional memory one. The two-phase non-overlap power-clock generator with power-gating scheme is used to supply the proposed adiabatic register file. Full-custom layouts are drawn. The energy and functional simulations have been performed using the net-list extracted from their layouts. Compared with the traditional static CMOS register file, HSPICE simulations show that the proposed adiabatic register file can work very well, and it attains about 73% energy savings at 100 MHz.

Keywords: Low power, Register file, Complementarypass-transistor logic, Adiabatic logic, Single-phase power clock.

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Authors: Hai-Qing Xie, Yun Zeng, Yong-Hong Yan, Guo-Liang Zhang, Tai-Hong Wang

Abstract:

We propose photo-BJMOSFET (Bipolar Junction Metal-Oxide-Semiconductor Field Effect Transistor) fabricated on SOI film. ITO film is adopted in the device as gate electrode to reduce light absorption. I-V characteristics of photo-BJMOSFET obtained in dark (dark current) and under 570nm illumination (photo current) are studied furthermore to achieve high photo-to-dark-current contrast ratio. Two variables in the calculation were the channel length and the thickness of the film which were set equal to six different values, i.e., L=2, 4, 6, 8, 10, and 12μm and three different values, i.e., dsi =100, 200 and 300nm, respectively. The results indicate that the greatest photo-to-dark-current contrast ratio is achieved with L=10μm and dsi=200 nm at VGK=0.6V.

Keywords: Photo-to-dark-current contrast ratio, Photo-current, Dark-current, Process parameter

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Authors: Porag Jyoti Ligira, Gargi Khanna

Abstract:

The paper presents a simulation study of the electrical characteristic of Bulk Planar Junctionless Transistor (BPJLT) using spacer. The BPJLT is a transistor without any PN junctions in the vertical direction. It is a gate controlled variable resistor. The characteristics of BPJLT are analyzed by varying the oxide material under the gate. It can be shown from the simulation that an ideal subthreshold slope of ~60 mV/decade can be achieved by using highk dielectric. The effects of variation of spacer length and material on the electrical characteristic of BPJLT are also investigated in the paper. The ION / IOFF ratio improvement is of the order of 107 and the OFF current reduction of 10-4 is obtained by using gate dielectric of HfO2 instead of SiO2.

Keywords: BPJLT, double gate, high-k, spacer.

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Authors: Min-ju Kwon, Chae-won Kim, Jeong-yun Seo, Hee-guk Chae, Yong-seo Koo

Abstract:

In this paper, we presented the LDO (low-dropout) regulator which enhanced the PSRR by applying the constant current source generation technique through the BGR (Band Gap Reference) to form the noise sensing circuit. The current source through the BGR has a constant current value even if the applied voltage varies. Then, the noise sensing circuit, which is composed of the current source through the BGR, operated between the error amplifier and the pass transistor gate of the LDO regulator. As a result, the LDO regulator has a PSRR of -68.2 dB at 1k Hz, -45.85 dB at 1 MHz and -45 dB at 10 MHz. the other performance of the proposed LDO was maintained at the same level of the conventional LDO regulator.

Keywords: LDO regulator, noise sensing circuit, current reference, pass transistor.

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Authors: Dawit Burusie Abdi, Mamidala Jagadesh Kumar

Abstract:

In this paper, using 2D TCAD simulations, the application of a dual material gate (DMG) for suppressing ambipolar conduction in a tunnel field effect transistor (TFET) is demonstrated. Using the proposed DMG concept, the ambipolar conduction can be effectively suppressed even if the drain doping is as high as that of the source doping. Achieving this symmetrical doping, without the ambipolar conduction in TFETs, gives the advantage of realizing both n-type and p-type devices with the same doping sequences. Furthermore, the output characteristics of the DMG TFET exhibit a good saturation when compared to that of the gate-drain underlap approach. This improved behavior of the DMG TFET makes it a good candidate for inverter based logic circuits.

Keywords: Dual material gate, suppressing ambipolar current, symmetrically doped TFET, tunnel FETs, PNPN TFET.

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Authors: Hai-Qing Xie, Yun Zeng, Yong-Hong Yan, Jian-Ping Zeng, Tai-Hong Wang

Abstract:

Photo-BJMOSFET (Bipolar Junction Metal-Oxide- Semiconductor Field Effect Transistor) fabricated on SOI film was proposed. ITO film is adopted in the device as gate electrode to reduce light absorption. Depletion region but not inversion region is formed in film by applying gate voltage (but low reverse voltage) to achieve high photo-to-dark-current ratio. Comparisons of photoelectriccharacteristics executed among VGK=0V, 0.3V, 0.6V, 0.9V and 1.0V (reverse voltage VAK is equal to 1.0V for total area of 10×10μm2). The results indicate that the greatest improvement in photo-to-dark-current ratio is achieved up to 2.38 at VGK=0.6V. In addition, photo-BJMOSFET is compatible with CMOS integration due to big input resistance

Keywords: Photo-BJMOSFET, Responsivity, Sensitivity, Spectral response.

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Authors: Zina Saheb, Ezz El-Masry

Abstract:

As the Silicon oxide scaled down in MOSFET technology to few nanometers, gate Direct Tunneling (DT) in Floating gate (FGMOSFET) devices has become a major concern for analog designers. FGMOSFET has been used in many low-voltage and low-power applications, however, there is no accurate model that account for DT gate leakage in nano-scale. This paper studied and analyzed different simulation models for FGMOSFET using TSMC 90-nm technology. The simulation results for FGMOSFET cascade current mirror shows the impact of DT on circuit performance in terms of current and voltage without the need for fabrication. This works shows the significance of using an accurate model for FGMOSFET in nan-scale technologies.

Keywords: CMOS transistor, direct-tunneling current, floatinggate, gate-leakage current, simulation model.

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Authors: N. Massoum, A. Guen. Bouazza, B. Bouazza, A. El Ouchdi

Abstract:

The progress of industry integrated circuits in recent years has been pushed by continuous miniaturization of transistors. With the reduction of dimensions of components at 0.1 micron and below, new physical effects come into play as the standard simulators of two dimensions (2D) do not consider. In fact the third dimension comes into play because the transverse and longitudinal dimensions of the components are of the same order of magnitude. To describe the operation of such components with greater fidelity, we must refine simulation tools and adapted to take into account these phenomena. After an analytical study of the static characteristics of the component, according to the different operating modes, a numerical simulation is performed of field-effect transistor with submicron gate MESFET GaInP. The influence of the dimensions of the gate length is studied. The results are used to determine the optimal geometric and physical parameters of the component for their specific applications and uses.

Keywords: Monte Carlo simulation, transient electron transport, MESFET device.

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Authors: S. Santalunai, T. Thosdeekoraphat, C. Thongsopa

Abstract:

This paper presents the effect of electric field distribution which is an electric field intensity analysis. Consideration of the dielectric heating of grains and insects, the rice and rice weevils are utilized for dielectric heating analysis. Furthermore, this analysis compares the effect of electric field distribution in rice and rice weevil. In this simulation, two copper plates are used to generate the electric field for dielectric heating system and put the rice materials between the copper plates. The simulation is classified in two cases, which are case I one rice weevil is placed in the rice and case II two rice weevils are placed at different position in the rice. Moreover, the probes are located in various different positions on plate. The power feeding on this plate is optimized by using CST EM studio program of 1000 watt electrical power at 39 MHz resonance frequency. The results of two cases are indicated that the most electric field distribution and intensity are occurred on the rice and rice weevils at the near point of the probes. Moreover, the heat is directed to the rice weevils more than the rice. When the temperature of rice and rice weevils are calculated and compared, the rice weevils has the temperature more than rice is about 41.62 Celsius degrees. These results can be applied for the dielectric heating applications to eliminate insect.

Keywords: Copper plates, Electric field distribution, Dielectric heating.

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Authors: Hung-Pei Hsu, Jyi-Tsong Lin, Po-Hsieh Lin, Cheng-Hsien Chang, Ming-Tsung Shih, Chan-Hsiang Chang, Shih-Chuan Tseng, Min-Yan Lin, Shih-Wen Hsu

Abstract:

In this paper, we propose a novel metal oxide semiconductor field effect transistor with L-shaped channel structure (LMOS), and several type of L-shaped structures are also designed, studied and compared with the conventional MOSFET device for the same average gate length (Lavg). The proposed device electrical characteristics are analyzed and evaluated by three dimension (3-D) ISE-TCAD simulator. It can be confirmed that the LMOS devices have higher on-state drain current and both lower drain-induced barrier lowering (DIBL) and subthreshold swing (S.S.) than its conventional counterpart has. In addition, the transconductance and voltage gain properties of the LMOS are also improved.

Keywords: Average gate length (Lavg), drain-induced barrier lowering (DIBL), L-shaped channel MOSFET (LMOS), subthreshold swing (S.S.).

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Authors: Srikanta Bose, S.K. Mazumder

Abstract:

In the present simulation work, an attempt is made to study the switching dynamics of an optically controlled 4HSiC thyristor power semiconductor device with the use of GaAs optically triggered power transistor. The half-cell thyristor has the forward breakdown of 200 V and reverse breakdown of more than 1000 V. The optically controlled thyristor has a rise time of 0.14 μs and fall time of 0.065 μs. The turn-on and turn-off delays are 0.1 μs and 0.06 μs, respectively. In addition, this optically controlled thyristor is used as a control switch for the DC-DC Boost converter. The pn-diode used for the converter has the forward drop of 2.8 V and reverse breakdown of around 400 V.

Keywords: 4H-SiC, Boost converter, Optical triggering, Power semiconductor device, thyristor.

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Authors: Ching-Feng Chen, Ching-Chih Tsai

Abstract:

With the size of the transistor gradually approaching the physical limit, it challenges the persistence of Moore’s Law due to such issues of the short channel effect and the development of the high numerical aperture (NA) lithography equipment. In the context of the ever-increasing technical requirements of portable devices and high-performance computing (HPC), relying on the law continuation to enhance the chip density will no longer support the prospects of the electronics industry. Weighing the chip’s power consumption-performance-area-cost-cycle time to market (PPACC) is an updated benchmark to drive the evolution of the advanced wafer nanometer (nm). The advent of two and half- and three-dimensional (2.5 and 3D)- Very-Large-Scale Integration (VLSI) packaging based on Through Silicon Via (TSV) technology has updated the traditional die assembly methods and provided the solution. This overview investigates the up-to-date and cutting-edge packaging technologies for 2.5D and 3D integrated circuits (IC) based on the updated transistor structure and technology nodes. We conclude that multi-chip solutions for 2.5D and 3D IC packaging can prolong Moore’s Law.

Keywords: Moore’s Law, High Numerical Aperture, Power Consumption-Performance-Area-Cost-Cycle Time to Market, PPACC, 2.5 and 3D-Very-Large-Scale Integration Packaging, Through Silicon Vi.

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Authors: Y.Bakhshan, H.Ashoori

Abstract:

In this research, a 2-D computational analysis of steady state free convection in a rectangular enclosure filled with an electrically conducting fluid under Effect of Magnetic Field has been performed. The governing equations (mass, momentum, and energy) are formulated and solved by a finite volume method (FVM) subjected to different boundary conditions. A parametric study has been conducted to consider the influence of Grashof number (Gr), Prantdl number (Pr) and the orientation of magnetic field on the flow and heat transfer characteristics. It is observed that Nusselt number (Nu) and heat flux will increase with increasing Grashof and Prandtl numbers and decreasing the slope of the orientation of magnetic field.

Keywords: Rectangular Cavity, magneto-hydrodynamic, free convection, simulation

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Authors: S. Tupsie, A. Isaramongkolrak, P. Pao-la-or

Abstract:

This paper presents the mathematical model of electric field and magnetic field in transmission system, which performs in second-order partial differential equation. This research has conducted analyzing the electromagnetic field radiating to atmosphere around the transmission line, when there is the transmission line transposition in case of long distance distribution. The six types of 500 kV transposed HV transmission line with double circuit will be considered. The computer simulation is applied finite element method that is developed by MATLAB program. The problem is considered to two dimensions, which is time harmonic system with the graphical performance of electric field and magnetic field. The impact from simulation of six types long distance distributing transposition will not effect changing of electric field and magnetic field which surround the transmission line.

Keywords: Transposition, Electromagnetic Field, Finite Element Method (FEM), Transmission Line, Computer Simulation

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Authors: AL.AL, M. B. I. Reaz, S. M. A. Motakabber, Mohd Alauddin Mohd Ali

Abstract:

Nowadays it is a trend for electronic circuit designers to integrate all system components on a single-chip. This paper proposed the design of a single-chip proportional to absolute temperature (PTAT) sensor including a voltage reference circuit using CEDEC 0.18m CMOS Technology. It is a challenge to design asingle-chip wide range linear response temperature sensor for many applications. The channel widths between the compensation transistor and the reference transistor are critical to design the PTAT temperature sensor circuit. The designed temperature sensor shows excellent linearity between -100°C to 200° and the sensitivity is about 0.05mV/°C. The chip is designed to operate with a single voltage source of 1.6V.

Keywords: PTAT, single-chip circuit, linear temperature sensor, CMOS technology.

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Authors: Ahmad Gholami , Saeed Sharafi, Hamid Abbasdokht

Abstract:

The effect of magnetic field on germination characteristics of two wheat Seeds has been studied under laboratory conditions. Seeds were magnetically exposed to magnetic field strengths, 125 or 250mT for different periods of time. Mean germination time and the time required to obtain 10, 25, 50, 75 and 90%of seeds to germinate were calculated. The germination time for each treatment were in general, higher than corresponding control values, in the other word in treated seeds time required for mean seed germination time increased nearly 3 hours in compared non treated control seeds. T10 for doses D5, D6, D11 and D12 significantly higher than the control values for both cultivars. Mean germination time (MGT) in both cultivars significantly increased when the time of seed exposed at magnetic field treatments increased , about 3 and 2 hour respectively for Omid and BCR cultivars.

Keywords: wheat, cultivar, germination test, magnetic field

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Authors: G. N. Sekhar, P. G. Siddheshwar, G. Jayalatha, R. Prakash

Abstract:

The problem of thermal convection in temperature and magnetic field sensitive Newtonian ferromagnetic liquid is studied in the presence of uniform vertical magnetic field and throughflow. Using a combination of Galerkin and shooting techniques the critical eigenvalues are obtained for stationary mode. The effect of Prandtl number (Pr > 1) on onset is insignificant and nonlinearity of non-buoyancy magnetic parameter M3 is found to have no influence on the onset of ferroconvection. The magnetic buoyancy number, M1 and variable viscosity parameter, V have destabilizing influences on the system. The effect of throughflow Peclet number, Pe is to delay the onset of ferroconvection and this effect is independent of the direction of flow.

Keywords: Ferroconvection, throughflow, temperature dependent viscosity, magnetic field dependent viscosity.

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Authors: D. K. Tiwari, Mukesh Kumar Awasthi, G. S. Agrawal

Abstract:

The effect of an axial electric field on the capillary instability of a cylindrical interface in the presence of heat and mass transfer has been investigated using viscous potential flow theory. In viscous potential flow, the viscous term in Navier-Stokes equation vanishes as vorticity is zero but viscosity is not zero. Viscosity enters through normal stress balance in the viscous potential flow theory and tangential stresses are not considered. A dispersion relation that accounts for the growth of axisymmetric waves is derived and stability is discussed theoretically as well as numerically. Stability criterion is given by critical value of applied electric field as well as critical wave number. Various graphs have been drawn to show the effect of various physical parameters such as electric field, heat transfer capillary number, conductivity ratio, permittivity ratio on the stability of the system. It has been observed that the axial electric field and heat and mass transfer both have stabilizing effect on the stability of the system.

Keywords: Capillary instability, Viscous potential flow, Heat and mass transfer, Axial electric field.

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Authors: Robert Setekera, Luuk Tiemeijer, Ramses van der Toorn

Abstract:

In this paper an extensive verification of the extraction method (published earlier) that consistently accounts for self-heating and Early effect to accurately extract both base and thermal resistance of bipolar junction transistors is presented. The method verification is demonstrated on advanced RF SiGe HBTs were the extracted results for the thermal resistance are compared with those from another published method that ignores the effect of Early effect on internal base-emitter voltage and the extracted results of the base resistance are compared with those determined from noise measurements. A self-consistency of our method in the extracted base resistance and thermal resistance using compact model simulation results is also carried out in order to study the level of accuracy of the method.

Keywords: Avalanche, Base resistance, Bipolar transistor, Compact modeling, Early voltage, Thermal resistance, Self-heating, parameter extraction.

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Authors: B. Dahiya, K.Batra, V.Prasad

Abstract:

Artificial atoms are growing fields of interest due to their physical and optoelectronicapplications. The absorption spectra of the proposed artificial atom inpresence of Tera-Hertz field is investigated theoretically. We use the non-perturbativeFloquet theory and finite difference method to study the electronic structure of ArtificialAtom. The effect of static electric field on the energy levels of artificial atom is studied.The effect of orientation of static electric field on energy levels and diploe matrix elementsis also highlighted.

Keywords: Absorption spectra, Artificial atom, Floquet Theory, THz fields

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Authors: Steve Hung-Lung Tu, Yu-Hsuan Cheng

Abstract:

A novel and efficient approach to realize fractional-order capacitors is investigated in this paper. Meanwhile, a new approach which is more efficient for semiconductor implementation of fractional-order capacitors is proposed. The feasibility of the approach has been verified with the preliminary measured results.

Keywords: Fractional-order, field-effect transistors, RC transmission lines.

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Authors: Mukesh Kumar Awasth, Mohammad Tamsir

Abstract:

The effect of porous medium on the capillary instability of a cylindrical interface in the presence of axial electric field has been investigated using viscous potential flow theory. In viscous potential flow, the viscous term in Navier-Stokes equation vanishes as vorticity is zero but viscosity is not zero. Viscosity enters through normal stress balance in the viscous potential flow theory and tangential stresses are not considered. A dispersion relation that accounts for the growth of axisymmetric waves is derived and stability is discussed theoretically as well as numerically. Stability criterion is given by critical value of applied electric field as well as critical wave number. Various graphs have been drawn to show the effect of various physical parameters such as electric field, viscosity ratio, permittivity ratio on the stability of the system. It has been observed that the axial electric field and porous medium both have stabilizing effect on the stability of the system.

Keywords: Capillary instability, Viscous potential flow, Porous media, Axial electric field.

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Authors: Vincent King Soon Wong, Hong Seng Ng, Florinna Sim

Abstract:

Negative Bias Temperature Instability (NBTI) is one of the critical degradation mechanisms in semiconductor device reliability that causes shift in the threshold voltage (Vth). However, thorough understanding of this reliability failure mechanism is still unachievable due to a recovery characteristic known as NBTI recovery. This paper will demonstrate the severity of NBTI recovery as well as one of the effective methods used to mitigate, which is the minimization of measurement system delays. Comparison was done in between two measurement systems that have significant differences in measurement delays to show how NBTI recovery causes result deviations and how fast measurement systems can mitigate NBTI recovery. Another method to minimize NBTI recovery without the influence of measurement system known as Fast Wafer Level Reliability (FWLR) NBTI was also done to be used as reference.

Keywords: Fast vs slow BTI, Fast wafer level reliability, Negative bias temperature instability, NBTI measurement system, metal-oxide-semiconductor field-effect transistor, MOSFET, NBTI recovery, reliability.

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Authors: B. Marungsri, W. Onchantuek, A. Oonsivilai, T. Kulworawanichpong

Abstract:

This paper presents the simulation results of electric field and potential distributions along surface of silicone rubber polymer insulators under clean and various contamination conditions with/without water droplets. Straight sheds insulator having leakage distance 290 mm was used in this study. Two type of contaminants, playwood dust and cement dust, have been studied the effect of contamination on the insulator surface. The objective of this work is to comparison the effect of contamination on potential and electric field distributions along the insulator surface when water droplets exist on the insulator surface. Finite element method (FEM) is adopted for this work. The simulation results show that contaminations have no effect on potential distribution along the insulator surface while electric field distributions are obviously depended on contamination conditions.

Keywords: electric field distribution, potential distribution, silicone rubber polymer insulator, finite element method

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Authors: N. Masoudnia, M. Fatahi

Abstract:

An experimental study of saturated pool boiling on a single artificial nucleation site without and with the application of an electric field on the boiling surface has been conducted. N-pentane is boiling on a copper surface and is recorded with a high speed camera providing high quality pictures and movies. The accuracy of the visualization allowed establishing an experimental bubble growth law from a large number of experiments. This law shows that the evaporation rate is decreasing during the bubble growth, and underlines the importance of liquid motion induced by the preceding bubble. Bubble rise is therefore studied: once detached, bubbles accelerate vertically until reaching a maximum velocity in good agreement with a correlation from literature. The bubbles then turn to another direction. The effect of applying an electric field on the boiling surface in finally studied. In addition to changes of the bubble shape, changes are also shown in the liquid plume and the convective structures above the surface. Lower maximum rising velocities were measured in the presence of electric fields, especially with a negative polarity.

Keywords: Single bubbles, electric field, boiling, effect.

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Authors: Niaz Gharavi, Hexin Zhang

Abstract:

The shear modulus of a timber beam can be determined using torsion test or shear field test method. The shear field test method is based on shear distortion measurement of the beam at the zone with the constant transverse load in the standardized four-point bending test. The current code of practice advises using two metallic arms act as an instrument to measure the diagonal displacement of the constructing square. The size and the position of the constructing square might influence the shear modulus determination. This study aimed to investigate the size and the position effect of the square in the shear field test method. A binocular stereo vision system has been employed to determine the 3D displacement of a grid of target points. Six glue laminated beams were produced and tested. Analysis of Variance (ANOVA) was performed on the acquired data to evaluate the significance of the size effect and the position effect of the square. The results have shown that the size of the square has a noticeable influence on the value of shear modulus, while, the position of the square within the area with the constant shear force does not affect the measured mean shear modulus.

Keywords: Shear field test method, structural-sized test, shear modulus of Glulam beam, photogrammetry approach.

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Authors: Kanittha Kanokkanjana, Savitri Garivait

Abstract:

This study focuses on emission of black carbon (BC) from field open burning of corn residues. Real-time BC concentration was measured by Micro Aethalometer from field burning and simulated open burning in a chamber (SOC) experiments. The average concentration of BC was 1.18±0.47 mg/m3 in the field and 0.89±0.63 mg/m3 in the SOC. The deduced emission factor from field experiments was 0.50±0.20 gBC/kgdm, and 0.56±0.33 gBC/kgdm from SOC experiment, which are in good agreement with other studies. In 2007, the total burned area of corn crop was 8,000 ha, resulting in an emission load of BC 20 ton corresponding to 44.5 million kg CO2 equivalent. Therefore, the control of open burning in corn field represents a significant global warming reduction option.

Keywords: Black carbon, corn field residues, global warming, mitigation option

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Authors: T. Benmiloud, A. Omari

Abstract:

This paper presents a new technique of compensation of the effect of variation parameters in the direct field oriented control of induction motor. The proposed method uses an adaptive tuning of the value of synchronous speed to obtain the robustness for the field oriented control. We show that this adaptive tuning allows having robustness for direct field oriented control to changes in rotor resistance, load torque and rotational speed. The effectiveness of the proposed control scheme is verified by numerical simulations. The numerical validation results of the proposed scheme have presented good performances compared to the usual direct-field oriented control.

Keywords: Induction motor, direct field-oriented control, compensation of variation parameters, fuzzy logic controller.

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Authors: M. Zake, I. Barmina, A. Kolmickovs, R. Valdmanis

Abstract:

Experimental investigations of the DC electric field effect on thermal decomposition of biomass, formation of the axial flow of volatiles (CO, H2, CxHy), mixing of volatiles with swirling airflow at low swirl intensity (S ≈ 0.2-0.35), their ignition and on formation of combustion dynamics are carried out with the aim to understand the mechanism of electric field influence on biomass gasification, combustion of volatiles and heat energy production. The DC electric field effect on combustion dynamics was studied by varying the positive bias voltage of the central electrode from 0.6 kV to 3 kV, whereas the ion current was limited to 2 mA. The results of experimental investigations confirm the field-enhanced biomass gasification with enhanced release of volatiles and the development of endothermic processes at the primary stage of thermochemical conversion of biomass determining the field-enhanced heat energy consumption with the correlating decrease of the flame temperature and heat energy production at this stage of flame formation. Further, the field-enhanced radial expansion of the flame reaction zone correlates with a more complete combustion of volatiles increasing the combustion efficiency by 3% and decreasing the mass fraction of CO, H2 and CxHy in the products, whereas by 10% increases the average volume fraction of CO2 and the heat energy production downstream the combustor increases by 5-10% 

Keywords: Biomass, combustion, electrodynamic control, gasification.

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Authors: Fathi Abubrig, Mohamed Delfag, Suad M. Abuzariba

Abstract:

The influence of the crystal field interactions on the mixed spin-3/2 and spin-5/2 ferrimagnetic Ising system is considered by using the mean field theory based on Bogoliubov inequality for the Gibbs free energy. The ground-state phase diagram is constructed, the phase diagrams of the second-order critical temperatures are obtained, and the thermal variation of the sublattice magnetizations is investigated in detail. We find some interesting phenomena for the sublattice magnetizations at particular values of the crystal field interactions.

Keywords: Crystal field, Ising system, Ferrimagnetic, magnetization, phase diagrams.

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