Srikanta Bose and S.K. Mazumder
Structural Simulation of a 4HSic Based Optically Controlled Thyristor Using a GaAs Based Optically Triggered Power Transistor and Its Application to DCDC Boost Converter
1529 - 1531
2012
6
12
International Journal of Electrical and Computer Engineering
https://publications.waset.org/pdf/7505
https://publications.waset.org/vol/72
World Academy of Science, Engineering and Technology
In the present simulation work, an attempt is made to study the switching dynamics of an optically controlled 4HSiC thyristor power semiconductor device with the use of GaAs optically triggered power transistor. The halfcell thyristor has the forward breakdown of 200 V and reverse breakdown of more than 1000 V. The optically controlled thyristor has a rise time of 0.14 μs and fall time of 0.065 μs. The turnon and turnoff delays are 0.1 μs and 0.06 μs, respectively. In addition, this optically controlled thyristor is used as a control switch for the DCDC Boost converter. The pndiode used for the converter has the forward drop of 2.8 V and reverse breakdown of around 400 V.
Open Science Index 72, 2012