Search results for: CMOS biosensor

Authors: Gu Wei, Gao Wei

Abstract:

In this report, an OTA which is used in fully differential pipelined ADC was described. Using gain-boost architecture with difference-ended amplifier, this OTA achieve high-gain and high-speed. Besides, the CMFB circuit is also used, and some methods are concerned to improve the performance. Then, by optimization the layout design, OTA-s mismatch was reduced. This design was using TSMC 0.18um CMOS process and simulation both schematic and layout in Cadence. The result of the simulation shows that the OTA has a gain up to 80dB,a unity gain bandwidth of about 1.437GHz for a 2pF load, a slew rate is about 428V/μs, a output swing is 0.2V~1.35V, with the power supply of 1.8V, the power consumption is 88mW. This amplifier was used in a 10bit 150MHz pipelined ADC.

Keywords: OTA, common drain, CMFB, pipelined ADC

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Authors: I. V. N. Rathnayake, Mallavarapu Megharaj, Nanthi Bolan, Ravi Naidu

Abstract:

With the intention of screening for heavy metal tolerance, a number of bacteria were isolated and characterized from a pristine soil. Two Gram positive isolates were identified as Paenibacillus sp. and Bacillus thuringeinsis. Tolerance of Cd2+, Cu2+ and Zn2+ by these bacteria was studied and found that both bacteria were highly sensitive to Cu2+ compared to other two metals. Both bacteria showed the same pattern of metal tolerance in the order Zn+ > Cd2+ > Cu2+. When the metal tolerance in both bacteria was compared, Paenibacillus sp. showed the highest sensitivity to Cu2+ where as B. thuringiensis showed highest sensitivity to Cd2+ and Zn2+ .These findings revealed the potential of Paenibacillus sp. in developing a biosensor to detect Cu2+ in environmental samples.

Keywords: Heavy metals, bacteria, soil, tolerance.

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Authors: B.Gholami, S.Gholami, A.Forouzantabar, Sh.Bazyari

Abstract:

A new design approach for three-stage operational amplifiers (op-amps) is proposed. It allows to actually implement a symmetrical push-pull class-AB amplifier output stage for wellestablished three-stage amplifiers using a feedforward transconductance stage. Compared with the conventional design practice, the proposed approach leads to a significant improvement of the symmetry between the positive and the negative op-amp step response, resulting in similar values of the positive/negative settling time. The new approach proves to be very useful in order to fully exploit the potentiality allowed by the op-amp in terms of speed performances. Design examples in a commercial 0.35-μm CMOS prove the effectiveness of theproposed strategy.

Keywords: Low-voltage op amp, design , optimum design

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Authors: O. Hashemipour, S. G. Nabavi

Abstract:

A high-linearity and high-speed current-mode sampleand- hold circuit is designed and simulated using a 0.25μm CMOS technology. This circuit design is based on low voltage and it utilizes a fully differential circuit. Due to the use of only two switches the switch related noise has been reduced. Signal - dependent -error is completely eliminated by a new zero voltage switching technique. The circuit has a linearity error equal to ±0.05μa, i.e. 12-bit accuracy with a ±160 μa differential output - input signal frequency of 5MHZ, and sampling frequency of 100 MHZ. Third harmonic is equal to –78dB.

Keywords: Zero-voltage-technique, MOS-resistor, OTA, Feedback-resistor.

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Authors: Yong Seo Koo, Dong Su Kim, Byung Seok Lee, Won Suk Park, Bo Bea Song

Abstract:

This paper presents a SCR-based ESD protection devices for I/O clamp and power rail clamp, respectably. These devices have a low trigger voltage and high holding voltage characteristics than conventional SCR device. These devices are fabricated by using 0.35um BCD (Bipolar-CMOS-DMOS) processes. These devices were validated using a TLP system. From the experimental results, the device for I/O ESD clamp has a trigger voltage of 5.8V. Also, the device for power rail ESD clamp has a holding voltage of 7.7V.

Keywords: ESD (Electro-Static Discharge), ESD protection device, SCR (Silicon Controlled Rectifier), Latch-up

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Authors: Yong-Seo Koo, Jin-Woo Jung, Byung-Seok Lee, Dong-Su Kim, Yil-Suk Yang

Abstract:

In this paper, a novel LVTSCR-based device for electrostatic discharge (ESD) protection of integrated circuits (ICs) is designed, fabricated and characterized. The proposed device is similar to the conventional LVTSCR but it has an embedded PMOSFET in the anode n-well to enhance the turn on speed, the clamping capability and the robustness. This is possible because the embedded PMOSFET provides the sub-path of ESD discharge current. The TLP, HBM and MM testing are carried out to verify the ESD performance of the proposed devices, which are fabricated in 0.35um (Bipolar-CMOS-DMOS) BCDMOS process. The device has the robustness of 70mA/um that is higher about 60mA/um than the LVTSCR, approximately.

Keywords: ESD Protection, grounded gate NMOS (GGNMOS), low trigger voltage SCR (LVTSCR)

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Authors: Kayvan Ahmadi, Hossein Shamsi

Abstract:

This paper proposes a low-voltage and low-power fully integrated digitally tuned continuous-time channel selection filter for WiMAX applications. A 5th-order elliptic low-pass filter is realized in a Gm-C topology. The bandwidth of the fully differential filter is reconfigurable from 2.5MHz to 20MHz (8x) for different requirements in WiMAX applications. The filter is simulated in a standard 90nm CMOS process. Simulation results show the THD (@Vout =100mVpp) is less than -66dB. The in-band ripple of the filter is about 0.15dB. The filter consumes 1.5mW from a supply voltage of 0.9V.

Keywords: Common-mode feedback, continuous-time, fully differential transconductor, Gm-C topology, low-voltage

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Authors: N. Shen, T. T. Le, H. Y. Yu, Z. X. Chen, K. T. Win, N. Singh, G. Q. Lo, D. -L. Kwong

Abstract:

In this paper, we present a vertical nanowire thin film transistor with gate-all-around architecture, fabricated using CMOS compatible processes. A novel method of fabricating polysilicon vertical nanowires of diameter as small as 30 nm using wet-etch is presented. Both n-type and p-type vertical poly-silicon nanowire transistors exhibit superior electrical characteristics as compared to planar devices. On a poly-crystalline nanowire of 30 nm diameter, high Ion/Ioff ratio of 106, low drain-induced barrier lowering (DIBL) of 50 mV/V, and low sub-threshold slope SS~100mV/dec are demonstrated for a device with channel length of 100 nm.

Keywords: Nanowire (NW), Gate-all-around (GAA), polysilicon (poly-Si), thin-film transistor (TFT).

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Authors: Omid Mirmotahari, Yngvar Berg, Ahmad Habibizad Navin

Abstract:

Reversible logic is becoming more and more prominent as the technology sets higher demands on heat, power, scaling and stability. Reversible gates are able at any time to "undo" the current step or function. Multiple-valued logic has the advantage of transporting and evaluating higher bits each clock cycle than binary. Moreover, we demonstrate in this paper, combining these disciplines we can construct powerful multiple-valued reversible logic structures. In this paper a reversible block implemented by pseudo floatinggate can perform AD-function and a DA-function as its reverse application.

Keywords: Reversible logic, bi-directional, Pseudo floating-gate(PFG), multiple-valued logic (MVL).

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Authors: Yasir Mahmood Qureshi

Abstract:

This paper presents the design and layout of a two stage, high speed operational amplifiers using standard 0.35um CMOS technology. The design procedure involves designing the bias circuit, the differential input pair, and the gain stage using CAD tools. Both schematic and layout of the operational amplifier along with the comparison in the results of the two has been presented. The operational amplifier designed, has a gain of 93.51db at low frequencies. It has a gain bandwidth product of 55.07MHz, phase margin of 51.9º and a slew rate of 22v/us for a load of capacitor of 10pF.

Keywords: Gain bandwidth product, Operational Amplifier, phase margin, slew rate.

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Authors: Pardeep Singh, Sanjay Sharma, Parvinder S. Sandhu

Abstract:

This work aims to reduce the read power consumption as well as to enhance the stability of the SRAM cell during the read operation. A new 10-transisor cell is proposed with a new read scheme to minimize the power consumption within the memory core. It has separate read and write ports, thus cell read stability is significantly improved. A 16Kb SRAM macro operating at 1V supply voltage is demonstrated in 65 nm CMOS process. Its read power consumption is reduced to 24% of the conventional design. The new cell also has lower leakage current due to its special bit-line pre-charge scheme. As a result, it is suitable for low-power mobile applications where power supply is restricted by the battery.

Keywords: A 16Kb 10T-SRAM, 4x Read-Power Reduction

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Authors: H. A. Majid, N. Razali, M. S. Sulaiman, A. K. A'ain

Abstract:

A new interface circuit for capacitive sensor is presented. This paper presents the design and simulation of soil moisture capacitive sensor interface circuit based on phase differential technique. The circuit has been designed and fabricated using MIMOS- 0.35"m CMOS technology. Simulation and test results show linear characteristic from 36 – 52 degree phase difference, representing 0 – 100% in soil moisture level. Test result shows the circuit has sensitivity of 0.79mV/0.10 phase difference, translating into resolution of 10% soil moisture level.

Keywords: Capacitive sensor, interface, phase differential.

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Authors: Dipankar Nag, Choe Andrew Kunil, Kevin Chai Tshun Chuan, Minkyu Je

Abstract:

This paper presents the design and implementation of a fully integrated Capacitance-to-Voltage Converter (CVC) as the analog front-end for magnetometer interface IC. The application demands very low power solution operating in the frequency of around 20 KHz. The design adapts low power architecture to create low noise electronic interface for Capacitive Micro-machined Lorentz force magnetometer sensor. Using a 0.18-μm CMOS process, simulation results of this interface IC show that the proposed CVC can provide 33 dB closed loop gain, 20 nV/√Hz input referred noise at 20 KHz, while consuming 65 μA current from 1.8-V supply. 

Keywords: Analog front end, Capacitance-to-Voltage Converter, Magnetometer, MEMS, Recycling Folded Cascode.

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Authors: Cheng-Hsuan Huang, Eric Lee

Abstract:

Electrophoretic motion of a liquid droplet within an uncharged cylindrical pore is investigated theoretically in this study. It is found that the boundary effect in terms of the reduction of droplet mobility (droplet velocity per unit strength of the applied electric field) is very significant when the double layer surrounding the droplet is thick, and diminishes as it gets very thin. Moreover, the viscosity ratio of the ambient fluid to the internal one, σ, is a crucial factor in determining its electrophoretic behavior. The boundary effect is less significant as the viscosity ratio gets high. Up to 70% mobility reduction is observed when this ratio is low (σ = 0.01), whereas only 40% reduction when it is high (σ = 100). The results of this study can be utilized in various fields of biotechnology, such as a biosensor or a lab-on-a-chip device.

Keywords: Cylindrical pore, Electrophoresis, Lab-on-a-chip, Liquid droplet

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Authors: Xin-Yu Shih, Yue-Qu Liu, Hong-Ru Chou

Abstract:

This paper presents a low-area and fully-reconfigurable Fast Fourier Transform (FFT) hardware design for 3GPP-LTE communication standard. It can fully support 32 different FFT sizes, up to 2048 FFT points. Besides, a special processing element is developed for making reconfigurable computing characteristics possible, while first-in first-out (FIFO) scheduling scheme design technique is proposed for hardware-friendly FIFO resource arranging. In a synthesis chip realization via TSMC 40 nm CMOS technology, the hardware circuit only occupies core area of 0.2325 mm² and dissipates 233.5 mW at maximal operating frequency of 250 MHz.

Keywords: Reconfigurable, fast Fourier transform, single-path delay feedback, 3GPP-LTE.

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Authors: Prungsak Uttaphut

Abstract:

An implementation of current-mode multiphase sinusoidal oscillators is presented. Using CFTA-based lossy integrators, odd and odd/even phase systems can be realized with following advantages. The condition of oscillation and frequency of oscillation can be orthogonally tuned. The high output impedances facilitate easy driving an external load without additional current buffers. The proposed MSOs provide odd or even phase signals that are equally spaced in phase and equal amplitude. The circuit requires one CFTA, one resistor and one grounded capacitor per phase without additional current amplifier. The results of PSPICE simulations using CMOS CFTA are included to verify theory.

Keywords: multiphase sinusoidal oscillator, current-mode, CFTA, lossy integrator

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Authors: S. Saisundar, Shan Jiang, Kevin T. C. Chai, David Nuttman, Minkyu Je

Abstract:

Keywords: Analog to digital converter, cyclic, gain-boosting, pipelined.

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Authors: Hassan Faraji Baghtash

Abstract:

A high-speed current mirror with low-power method of adjusting current gain is presented. The current mirror provides continuous gain adjustment; yet, its gain can simply be programmed digitally, as well. The structure features the ever interesting merits of linear-in-dB gain control scheme and low power/voltage operation. The performance of proposed structure is verified through the simulation in TSMC 0.18 µm CMOS Technology. The proposed tunable gain current mirror structure draws only 18 µW from 0.9 V power supply and can operate at high frequencies up to 550 MHz in the worst case condition of maximum gain setting.

Keywords: Current mirror, current mode, low power, low voltage, tunable circuit, variable current amplifier.

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Authors: Eduard Atkin, Alexander Klyuev, Vitaly Shumikhin

Abstract:

An approach and its implementation in 0.18 m CMOS process of the multichannel ASIC for capacitive (up to 30 pF) sensors are described in the paper. The main design aim was to study an analog data-driven architecture. The design was done for an analog derandomizing function of the 128 to 16 structure. That means that the ASIC structure should provide a parallel front-end readout of 128 input analog sensor signals and after the corresponding fast commutation with appropriate arbitration logic their processing by means of 16 output chains, including analog-to-digital conversion. The principal feature of the ASIC is a low power consumption within 2 mW/channel (including a 9-bit 20Ms/s ADC) at a maximum average channel hit rate not less than 150 kHz.

Keywords: Data-driven architecture, derandomizer, multichannel sensor readout

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Authors: Yavar Safaei Mehrabani, Mehdi Hosseinzadeh

Abstract:

As embedded and portable systems were emerged power consumption of circuits had been major challenge. On the other hand latency as determines frequency of circuits is also vital task. Therefore, trade off between both of them will be desirable. Modulo 2n+1 adders are important part of the residue number system (RNS) based arithmetic units with the interesting moduli set (2n-1,2n, 2n+1). In this manuscript we have introduced novel binary representation to the design of modulo 2n+1 adder. VLSI realization of proposed architecture under 180 nm full static CMOS technology reveals its superiority in terms of area, power consumption and power-delay product (PDP) against several peer existing structures.

Keywords: Computer arithmetic, modulo 2n+1 adders, Residue Number System (RNS), VLSI.

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Authors: Chih Chin Yang, Lan Hui Huang, Bo Shum Chen, Jia Liang Ke, Chung Lun Tsai

Abstract:

The control of oxygen flow rate during growth of titanium dioxide by mass flow controller in DC plasma sputtering growth system is studied. The impedance of TiO2 films for inductance effect is influenced by annealing time and oxygen flow rate. As annealing time is increased, the inductance of TiO2 film is the more. The growth condition of optimum and maximum inductance for TiO2 film to serve as sensing device are oxygen flow rate of 15 sccm and large annealing time. The large inductance of TiO2 film will be adopted to fabricate the biosensor to obtain the high sensitivity of sensing in biology.

Keywords: Annealed, Inductance, Silicon substarte, Titanium dioxide

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Authors: Rishikesh Pandey, Maneesha Gupta

Abstract:

A new low-voltage floating gate MOSFET (FGMOS) based squarer using square law characteristic of the FGMOS is proposed in this paper. The major advantages of the squarer are simplicity, rail-to-rail input dynamic range, low total harmonic distortion, and low power consumption. The proposed circuit is biased without body effect. The circuit is designed and simulated using SPICE in 0.25μm CMOS technology. The squarer is operated at the supply voltages of ±0.75V . The total harmonic distortion (THD) for the input signal 0.75Vpp at 25 KHz, and maximum power consumption were found to be less than 1% and 319μW respectively.

Keywords: Analog signal processing, floating gate MOSFETs, low-voltage, Spice, squarer.

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Authors: Arash Azizi-Mazreah, Mohammad T. Manzuri Shalmani, Hamid Barati, Ali Barati

Abstract:

The energy consumption and delay in read/write operation of conventional SRAM is investigated analytically as well as by simulation. Explicit analytical expressions for the energy consumption and delay in read and write operation as a function of device parameters and supply voltage are derived. The expressions are useful in predicting the effect of parameter changes on the energy consumption and speed as well as in optimizing the design of conventional SRAM. HSPICE simulation in standard 0.25μm CMOS technology confirms precision of analytical expressions derived from this paper.

Keywords: Read energy consumption, write energy consumption, read delay, write delay.

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Authors: Il-Do Jeong, Hang-Geun Jeong

Abstract:

This paper describes the design and fabrication of a clock and data recovery circuit (CDR). We propose a new clock and data recovery which is based on a 1/4-rate frequency detector (QRFD). The proposed frequency detector helps reduce the VCO frequency and is thus advantageous for high speed application. The proposed frequency detector can achieve low jitter operation and extend the pull-in range without using the reference clock. The proposed CDR was implemented using a 1/4-rate bang-bang type phase detector (PD) and a ring voltage controlled oscillator (VCO). The CDR circuit has been fabricated in a standard 0.18 CMOS technology. It occupies an active area of 1 x 1 and consumes 90 mW from a single 1.8V supply.

Keywords: Clock and data recovery, 1/4-rate frequency detector, 1/4-rate phase detector.

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Authors: Krzysztof Wawryn, Robert Suszyński, Bogdan Strzeszewski

Abstract:

This paper presents two prototypes of low power low voltage current mode 9 bit pipelined a/d converters. The first and the second converters are configured of 1.5 bit and 2.5 bit stages, respectively. The a/d converter structures are composed of current mode building blocks and final comparator block which converts the analog current signal into digital voltage signal. All building blocks have been designed in CMOS AMS 0.35μm technology, then simulated to verify proposed concept. The performances of both converters are compared to performances of known current mode and voltage mode switched capacitance converter structures. Low power consumption and small chip area are advantages of the proposed converters.

Keywords: Pipelined converter, a/d converter, low power, lowvoltage, current mode.

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Authors: Ararat Khachatryan, Davit Mirzoyan

Abstract:

In sub micrometer technology, the aging phenomenon starts to have a significant impact on the reliability of integrated circuits by bringing performance degradation. For that reason, it is important to have a capability to evaluate the aging effects accurately. This paper presents an accurate aging measurement approach based on phase-locked loop (PLL) and voltage-controlled oscillator (VCO) circuit. The architecture is rejecting the circuit self-aging effect from the characteristics of PLL, which is generating the frequency without any aging phenomena affects. The aging monitor is implemented in low power 32 nm CMOS technology, and occupies a pretty small area. Aging simulation results show that the proposed aging measurement circuit improves accuracy by about 2.8% at high temperature and 19.6% at high voltage.

Keywords: Nanoscale, aging, effect, NBTI, HCI.

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Authors: Padmanabhan Balasubramanian, Karthik Anantha

Abstract:

Structural representation and technology mapping of a Boolean function is an important problem in the design of nonregenerative digital logic circuits (also called combinational logic circuits). Library aware function manipulation offers a solution to this problem. Compact multi-level representation of binary networks, based on simple circuit structures, such as AND-Inverter Graphs (AIG) [1] [5], NAND Graphs, OR-Inverter Graphs (OIG), AND-OR Graphs (AOG), AND-OR-Inverter Graphs (AOIG), AND-XORInverter Graphs, Reduced Boolean Circuits [8] does exist in literature. In this work, we discuss a novel and efficient graph realization for combinational logic circuits, represented using a NAND-NOR-Inverter Graph (NNIG), which is composed of only two-input NAND (NAND2), NOR (NOR2) and inverter (INV) cells. The networks are constructed on the basis of irredundant disjunctive and conjunctive normal forms, after factoring, comprising terms with minimum support. Construction of a NNIG for a non-regenerative function in normal form would be straightforward, whereas for the complementary phase, it would be developed by considering a virtual instance of the function. However, the choice of best NNIG for a given function would be based upon literal count, cell count and DAG node count of the implementation at the technology independent stage. In case of a tie, the final decision would be made after extracting the physical design parameters. We have considered AIG representation for reduced disjunctive normal form and the best of OIG/AOG/AOIG for the minimized conjunctive normal forms. This is necessitated due to the nature of certain functions, such as Achilles- heel functions. NNIGs are found to exhibit 3.97% lesser node count compared to AIGs and OIG/AOG/AOIGs; consume 23.74% and 10.79% lesser library cells than AIGs and OIG/AOG/AOIGs for the various samples considered. We compare the power efficiency and delay improvement achieved by optimal NNIGs over minimal AIGs and OIG/AOG/AOIGs for various case studies. In comparison with functionally equivalent, irredundant and compact AIGs, NNIGs report mean savings in power and delay of 43.71% and 25.85% respectively, after technology mapping with a 0.35 micron TSMC CMOS process. For a comparison with OIG/AOG/AOIGs, NNIGs demonstrate average savings in power and delay by 47.51% and 24.83%. With respect to device count needed for implementation with static CMOS logic style, NNIGs utilize 37.85% and 33.95% lesser transistors than their AIG and OIG/AOG/AOIG counterparts.

Keywords: AND-Inverter Graph, OR-Inverter Graph, DirectedAcyclic Graph, Low power design, Delay optimization.

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Authors: Agord M. Pinto Jr., Yuzo Iano, Leandro T. Manera, Raphael R. N. Souza

Abstract:

This paper describes an optimization tool-based design strategy for a Current Mode Logic CML divide-by-2 circuit. Representing a building block for output frequency generation in a RFID protocol based-frequency synthesizer, the circuit was designed to minimize the power consumption for driving of multiple loads with unbalancing (at transceiver level). Implemented with XFAB XC08 180 nm technology, the circuit was optimized through MunEDA WiCkeD tool at Cadence Virtuoso Analog Design Environment ADE.

Keywords: Divide-by-2 circuit, CMOS technology, PLL phase locked-loop, optimization tool, CML current mode logic, RF transceiver.

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Authors: Shao-Ku Kao

Abstract:

This paper presents an active rectifier with time-domain delay compensation to enhance the efficiency. A delay calibration circuit is designed to convert delay time to voltage and adaptive control on/off delay in variable input voltage. This circuit is designed in 0.18 mm CMOS process. The input voltage range is from 2 V to 3.6 V with the output voltage from 1.8 V to 3.4 V. The efficiency can maintain more than 85% when the load from 50 Ω ~ 1500 Ω for 3.6 V input voltage. The maximum efficiency is 92.4 % at output power to be 38.6 mW for 3.6 V input voltage.

Keywords: Wireless power transfer, active diode, delay compensation, time to voltage converter, PCE.

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Authors: Kureshi Abdul Kadir, Mohd. Hasan

Abstract:

Each new semiconductor technology node brings smaller transistors and wires. Although this makes transistors faster, wires get slower. In nano-scale regime, the standard copper (Cu) interconnect will become a major hurdle for FPGA interconnect due to their high resistivity and electromigration. This paper presents the comprehensive evaluation of mixed CNT bundle interconnects and investigates their prospects as energy efficient and high speed interconnect for future FPGA routing architecture. All HSPICE simulations are carried out at operating frequency of 1GHz and it is found that mixed CNT bundle implemented in FPGAs as interconnect can potentially provide a substantial delay and energy reduction over traditional interconnects at 32nm process technology.

Keywords: CMOS, Copper Interconnect, Mixed CNT Bundle Interconnect, FPGAs.

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