Search results for: Sample & Hold Amplifier and CMOS Technology.

Authors: Shiyang Zhu, G. Q. Lo, D. L. Kwong

Abstract:

Silicon photonics has generated an increasing interest in recent years mainly for optical communications optical interconnects in microelectronic circuits or bio-sensing applications. The development of elementary passive and active components (including detectors and modulators), which are mainly fabricated on the silicon on insulator platform for CMOS-compatible fabrication, has reached such a performance level that the integration challenge of silicon photonics with microelectronic circuits should be addressed. Since crystalline silicon can only be grown from another silicon crystal, making it impossible to deposit in this state, the optical devices are typically limited to a single layer. An alternative approach is to integrate a photonic layer above the CMOS chip using back-end CMOS fabrication process. In this paper, various materials, including silicon nitride, amorphous silicon, and polycrystalline silicon, for this purpose are addressed.

Keywords: Silicon photonics, CMOS, Integration.

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Authors: Chokri Jebali, Noureddine Boulejfen, Ali Gharsallah, Fadhel M. Ghannouchi

Abstract:

In this paper, a system level behavioural model for RF power amplifier, which exhibits memory effects, and based on multibranch system is proposed. When higher order terms are included, the memory polynomial model (MPM) exhibits numerical instabilities. A set of memory orthogonal polynomial model (OMPM) is introduced to alleviate the numerical instability problem associated to MPM model. A data scaling and centring algorithm was applied to improve the power amplifier modeling accuracy. Simulation results prove that the numerical instability can be greatly reduced, as well as the model precision improved with nonlinear model.

Keywords: power amplifier, orthogonal model, polynomialmodel , memory effects.

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Authors: Hassan Faraji Baghtash

Abstract:

A high-speed current mirror with low-power method of adjusting current gain is presented. The current mirror provides continuous gain adjustment; yet, its gain can simply be programmed digitally, as well. The structure features the ever interesting merits of linear-in-dB gain control scheme and low power/voltage operation. The performance of proposed structure is verified through the simulation in TSMC 0.18 µm CMOS Technology. The proposed tunable gain current mirror structure draws only 18 µW from 0.9 V power supply and can operate at high frequencies up to 550 MHz in the worst case condition of maximum gain setting.

Keywords: Current mirror, current mode, low power, low voltage, tunable circuit, variable current amplifier.

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Authors: Abdelhamid Louliej, Younes Jabrane

Abstract:

Satellites are becoming indispensable assets to fifth-generation (5G) new radio architecture, complementing wireless and terrestrial communication links. The combination of satellites and 5G architecture allows consumers to access all next-generation services anytime, anywhere, including scenarios, like traveling to remote areas (without coverage). Nevertheless, this solution faces several challenges, such as a significant propagation delay, Doppler frequency shift, and high Peak-to-Average Power Ratio (PAPR), causing signal distortion due to the non-linear saturation of the High-Power Amplifier (HPA). To compensate for HPA non-linearity in 5G satellite transmission, an efficient pre-distorter scheme using Neural Networks (NN) is proposed. To assess the proposed NN pre-distorter, two types of HPA were investigated: Travelling Wave Tube Amplifier (TWTA) and Solid-State Power Amplifier (SSPA). The results show that the NN pre-distorter design presents an Error Vector Magnitude (EVM) improvement by 95.26%. Normalized Mean Square Error (NMSE) and Adjacent Channel Power Ratio (ACPR) were reduced by -43,66 dB and 24.56 dBm, respectively. Moreover, the system suffers no degradation of the Bit Error Rate (BER) for TWTA and SSPA amplifiers.

Keywords: Satellites, 5G, Neural Networks, High-Power Amplifier, Travelling Wave Tube Amplifier, Solid-State Power Amplifier, EVM, NMSE, ACPR.

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Authors: Hasmayadi Abdul Majid, Yuzman Yusoff, Noor Shelida Salleh

Abstract:

This paper presents the development of a single-ended 38.5 kS/s 10-bit programmable reference SAR ADC which is realized in MIMOS’s 0.35 µm CMOS process. The design uses a resistive DAC, a dynamic comparator with pre-amplifier and a SAR digital logic to create 10 effective bits ADC. A programmable reference circuitry allows the ADC to operate with different input range from 0.6 V to 2.1 V. The ADC consumed less than 7.5 mW power with a 3 V supply.

Keywords: Successive Approximation Register Analog-to- Digital Converter, SAR ADC, Resistive DAC, Programmable Reference.

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Authors: Zia Abbas, Giuseppe Scotti, Mauro Olivieri

Abstract:

Current mode circuits like current conveyors are getting significant attention in current analog ICs design due to their higher band-width, greater linearity, larger dynamic range, simpler circuitry, lower power consumption and less chip area. The second generation current controlled conveyor (CCCII) has the advantage of electronic adjustability over the CCII i.e. in CCCII; adjustment of the X-terminal intrinsic resistance via a bias current is possible. The presented approach is based on the CMOS implementation of second generation positive (CCCII+), negative (CCCII-) and dual Output Current Controlled Conveyor (DOCCCII) and its application as Universal filter. All the circuits have been designed and simulated using 65nm CMOS technology model parameters on Cadence Virtuoso / Spectre using 1V supply voltage. Various simulations have been carried out to verify the linearity between output and input ports, range of operation frequency, etc. The outcomes show good agreement between expected and experimental results.

Keywords: CCCII+, CCCII-, DOCCCII, Electronic tunability, Universal filter

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Authors: Wei Yi Lim, M. Annamalai Arasu, M. Kumarasamy Raja, Minkyu Je

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In this paper, the design of wide-swing constant transconductance (g_m) bias circuit that generates bias voltage for low-noise amplifier (LNA) circuit design by using an off-chip resistor is demonstrated. The overall transconductance (G_m) generated by the constant g_m bias circuit is important to maintain the overall gain and noise figure of the LNA circuit. Therefore, investigation is performed to study the variation in G_m with process, temperature and supply voltage (PVT).  Temperature and supply voltage are swept from -10 °C to 85 °C and 1.425 V to 1.575 V respectively, while the process conditions are also varied to the extreme and the g_m variation is eventually concluded at between -3 % to 7 %. With the slight variation in the g_m value, through simulation, at worst condition of state SS, we are able to attain a conversion gain (S₂₁) variation of -3.10 % and a noise figure (NF) variation of 18.71 %. The whole constant g_m circuit draws approximately 100 µA from a 1.5V supply and is designed based on 0.13 µm CMOS process. 

Keywords: Transconductance, LNA, temperature, process.

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Authors: Mahdi Ebrahimzadeh

Abstract:

In this paper we introduce an ultra low power CMOS LC oscillator and analyze a method to design a low power low phase noise complementary CMOS LC oscillator. A 1.8GHz oscillator is designed based on this analysis. The circuit has power supply equal to 1.1 V and dissipates 0.17 mW power. The oscillator is also optimized for low phase noise behavior. The oscillator phase noise is -126.2 dBc/Hz and -144.4 dBc/Hz at 1 MHz and 8 MHz offset respectively.

Keywords: LC oscillator, Low Power, Low Phase Noise

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Authors: E. Farshidi, N. Ahmadpoor

Abstract:

In this paper, a alternative structure method for continuous time sigma delta modulator is presented. In this modulator for implementation of integrators in loop filter second generation current conveyors are employed. The modulator is designed in CMOS technology and features low power consumption (<2.8mW), low supply voltage (±1.65), wide dynamic range (>65db), and with 180khZ bandwidth. Simulation results confirm that this design is suitable for data converters.

Keywords: Current Conveyor, continuous, sigma delta, MOS, modulator

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Authors: Fasil Endalamaw

Abstract:

Digital magnitude comparators based on Gate Diffusion Input (GDI) implementation technique are high speed and area-efficient, and they consume less power as compared to other implementation techniques. However, they are less efficient for some logic gates and have no full voltage swing. In this paper, we made a performance comparison between the GDI implementation technique and other implementation methods, such as Static CMOS, Pass Transistor Logic (PTL), and Transmission Gate (TG) in 90 nm, 120 nm, and 180 nm CMOS technologies using BSIM4 MOS model. We proposed a methodology (hybrid implementation) of implementing digital magnitude comparators which significantly improved the power, speed, area, and voltage swing requirements. Simulation results revealed that the hybrid implementation of digital magnitude comparators show a 10.84% (power dissipation), 41.6% (propagation delay), 47.95% (power-delay product (PDP)) improvement compared to the usual GDI implementation method. We used Microwind & Dsch Version 3.5 as well as the Tanner EDA 16.0 tools for simulation purposes.

Keywords: Efficient, gate diffusion input, high speed, low power, CMOS.

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Authors: Abdalla Mohamed Eblabla

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Due to the high increase in and demand for a wide assortment of applications that require low-cost, high-efficiency, and compact systems, RF power amplifiers are considered the most critical design blocks and power consuming components in wireless communication, TV transmission, radar, and RF heating. Therefore, much research has been carried out in order to improve the performance of power amplifiers. Classes-A, B, C, D, E and F are the main techniques for realizing power amplifiers.

An implementation of high efficiency class-F power amplifier with Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) was realized in this paper. The simulation and optimization of the class-F power amplifier circuit model was undertaken using Agilent’s Advanced Design system (ADS). The circuit was designed using lumped elements.

Keywords: Power Amplifier (PA), Gallium Nitride (GaN), Agilent’s Advanced Design system (ADS) and lumped elements.

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Authors: Morteza Fathipour, Samira Omidbakhsh, Kimia Khodayari

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RF performance of SOI CMOS device has attracted significant amount of interest recently. In order to improve RF parameters, Strained Si/Relaxed Si0.8Ge0.2 investigated as a replacement for Si technology .Enhancement of carrier mobility associated with strain engineering makes Strained Si a promising candidate for improving RF performance of CMOS technology. From the simulation, the cut-off frequency is estimated to be 224 GHZ, whereas in SOI at similar bias is about 188 GHZ. Therefore, Strained Si exhibits 19% improvement in cut-off frequency over similar Si counterpart. In this paper, Ion/Ioff ratio is studied as one of the key parameters in logic and digital application. Strained Si/SiGe demonstrates better Ion/Ioff characteristic than SOI, in similar channel length of 100 nm.Another important key analog figures of merit such as Early Voltage (VEA) ,transconductance vs drain current (gm /Ids) are studied. They introduce the efficiency of the devices to convert dc power into ac frequency.

Keywords: cut-off frequency, RF application, Silicon oninsulator, Strained Si/SiGe on insulator.

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Authors: S. Aisyah Azizan, M. Syafiq Azmi, Yuki Harada, Yoshinobu Maeda, Takaomi Matsutani

Abstract:

We introduced an all-optical multicasting characteristics with wavelength conversion based on a novel all-optical triode using negative feedback semiconductor optical amplifier. This study was demonstrated with a transfer speed of 10 Gb/s to a non-return zero 231-1 pseudorandom bit sequence system. This multi-wavelength converter device can simultaneously provide three channels of output signal with the support of non-inverted and inverted conversion. We studied that an all-optical multicasting and wavelength conversion accomplishing cross gain modulation is effective in a semiconductor optical amplifier which is effective to provide an inverted conversion thus negative feedback. The relationship of received power of back to back signal and output signals with wavelength 1535 nm, 1540 nm, 1545 nm, 1550 nm, and 1555 nm with bit error rate was investigated. It was reported that the output signal wavelengths were successfully converted and modulated with a power penalty of less than 8.7 dB, which the highest is 8.6 dB while the lowest is 4.4 dB. It was proved that all-optical multicasting and wavelength conversion using an optical triode with a negative feedback by three channels at the same time at a speed of 10 Gb/s is a promising device for the new wavelength conversion technology.

Keywords: Cross gain modulation, multicasting, negative feedback optical amplifier, semiconductor optical amplifier.

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Authors: Maninder Kaur Gill, Alpana Agarwal

Abstract:

It is practically not feasible to measure the open-loop voltage gain of the operational amplifier in the open loop configuration. It is because the open-loop voltage gain of the operational amplifier is very large. In order to avoid the saturation of the output voltage, a very small input should be given to operational amplifier which is not possible to be measured practically by a digital multimeter. A test circuit for measurement of open loop voltage gain of an operational amplifier has been proposed and verified using simulation tools as well as by experimental methods on breadboard. The main advantage of this test circuit is that it is simple, fast, accurate, cost effective, and easy to handle even on a breadboard. The test circuit requires only the device under test (DUT) along with resistors. This circuit has been tested for measurement of open loop voltage gain for different operational amplifiers. The underlying goal is to design testable circuits for various analog devices that are simple to realize in VLSI systems, giving accurate results and without changing the characteristics of the original system. The DUTs used are LM741CN and UA741CP. For LM741CN, the simulated gain and experimentally measured gain (average) are calculated as 89.71 dB and 87.71 dB, respectively. For UA741CP, the simulated gain and experimentally measured gain (average) are calculated as 101.15 dB and 105.15 dB, respectively. These values are found to be close to the datasheet values.

Keywords: Device under test, open-loop voltage gain, operational amplifier, test circuit.

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Authors: Shashank Gautam

Abstract:

This paper proposes techniques like MT CMOS, POWER GATING, DUAL STACK, GALEOR and LECTOR to reduce the leakage power. A Full Adder has been designed using these techniques and power dissipation is calculated and is compared with general CMOS logic of Full Adder. Simulation results show the validity of the proposed techniques is effective to save power dissipation and to increase the speed of operation of the circuits to a large extent.

Keywords: Low Power, MT CMOS, Galeor, Lector, Power Gating, Dual Stack, Full Adder.

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Authors: Rahul Bansal, Sudipta Majumdar

Abstract:

This paper presents the closed form nonlinear expressions of bipolar junction transistor (BJT) differential amplifier (DA) using perturbation method. Circuit equations have been derived using Kirchhoff’s voltage law (KVL) and Kirchhoff’s current law (KCL). The perturbation method has been applied to state variables for obtaining the linear and nonlinear terms. The implementation of the proposed method is simple. The closed form nonlinear expressions provide better insights of physical systems. The derived equations can be used for signal processing applications.

Keywords: Differential amplifier, perturbation method, Taylor series.

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Authors: Montree Kumngern, Kobchai Dejhan

Abstract:

Versatile dual-mode class-AB CMOS four-quadrant analog multiplier circuit is presented. The dual translinear loops and current mirrors are the basic building blocks in realization scheme. This technique provides; wide dynamic range, wide-bandwidth response and low power consumption. The major advantages of this approach are; its has single ended inputs; since its input is dual translinear loop operate in class-AB mode which make this multiplier configuration interesting for low-power applications; current multiplying, voltage multiplying, or current and voltage multiplying can be obtainable with balanced input. The simulation results of versatile analog multiplier demonstrate a linearity error of 1.2 %, a -3dB bandwidth of about 19MHz, a maximum power consumption of 0.46mW, and temperature compensated. Operation of versatile analog multiplier was also confirmed through an experiment using CMOS transistor array.

Keywords: Class-AB, dual-mode CMOS analog multiplier, CMOS analog integrated circuit, CMOS translinear integrated circuit.

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Authors: Saad Mutashar Abbas, M. A. Hannan, S. A. Samad, A. Hussain

Abstract:

This paper presented a proposed design for transcutaneous inductive powering links. The design used to transfer power and data to the implanted devices such as implanted Microsystems to stimulate and monitoring the nerves and muscles. The system operated with low band frequency 13.56 MHZ according to industrial- scientific – medical (ISM) band to avoid the tissue heating. For external part, the modulation index is 13 % and the modulation rate 7.3% with data rate 1 Mbit/s assuming Tbit=1us. The system has been designed using 0.35-μm fabricated CMOS technology. The mathematical model is given and the design is simulated using OrCAD P Spice 16.2 software tool and for real-time simulation the electronic workbench MULISIM 11 has been used. The novel circular plane (pancake) coils was simulated using ANSOFT- HFss software.

Keywords: Implanted devices, ASK techniques, Class-E power amplifier, Inductive powering and low-frequency ISM band.

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Authors: Chih-Chiang Hua, Yi-Hsiung Fang, Yuan-Jhen Siao

Abstract:

A bridgeless boost (BLB) power factor correction (PFC) rectifier with hold-up time extension circuit is proposed in this paper. A full bridge rectifier is widely used in the front end of the ac/dc converter. Since the shortcomings of the full bridge rectifier, the bridgeless rectifier is developed. A BLB rectifier topology is utilized with the hold-up time extension circuit. Unlike the traditional hold-up time extension circuit, the proposed extension scheme uses fewer active switches to achieve a longer hold-up time. Simulation results are presented to verify the converter performance.

Keywords: Bridgeless boost, boost converter, power factor correction, hold-up time.

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Authors: Neeraj K. Chasta

Abstract:

This paper presents an idea for analog current comparison which compares input signal and reference currents with high speed and accuracy. Proposed circuit utilizes amplification properties of common gate configuration, where voltage variations of input current are amplified and a compared output voltage is developed. Cascaded inverter stages are used to generate final CMOS compatible output voltage. Power consumption of circuit can be controlled by the applied gate bias voltage. The comparator is designed and studied at 180nm CMOS process technology for a supply voltage of 3V.

Keywords: Current Mode, Comparator, High Resolution, High Speed.

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Authors: Shipra Upadhyay , R. K. Nagaria, R. A. Mishra

Abstract:

In this paper, we present the design and experimental evaluation of complementary energy path adiabatic logic (CEPAL) based 1 bit full adder circuit. A simulative investigation on the proposed full adder has been done using VIRTUOSO SPECTRE simulator of cadence in 0.18μm UMC technology and its performance has been compared with the conventional CMOS full adder circuit. The CEPAL based full adder circuit exhibits the energy saving of 70% to the conventional CMOS full adder circuit, at 100 MHz frequency and 1.8V operating voltage.

Keywords: Adiabatic, CEPAL, full adder, power clock

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Authors: Inderpreet Kaur, Neena Gupta

Abstract:

Wavelength multiplexing (WDM) technology along with optical amplifiers is used for optical communication systems in S-band, C-band and L-band. To improve the overall system performance Hybrid amplifiers consisting of cascaded TDFA and EDFA with different gain bandwidths are preferred for long haul wavelength multiplexed optical communication systems. This paper deals with statistical analysis of different configuration of hybrid amplifier i.e. analysis of TDFA-EDFA configuration and EDFA – TDFA configuration. In this paper One-Way ANOVA method is used for statistical analysis.

Keywords: WDM, EDFA, TDFA, hybrid amplifier, One-wayANOVA.

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Authors: F. Rarbi, D. Dzahini, W. Uhring

Abstract:

In this paper, a dynamic and power efficient 8-bit and 100-MSPS Successive Approximation Register (SAR) Analog-to-Digital Converter (ADC) is presented. The circuit uses a non-differential capacitive Digital-to-Analog (DAC) architecture segmented by 2. The prototype is produced in a commercial 65-nm 1P7M CMOS technology with 1.2-V supply voltage. The size of the core ADC is 208.6 x 103.6 µm². The post-layout noise simulation results feature a SNR of 46.9 dB at Nyquist frequency, which means an effective number of bit (ENOB) of 7.5-b. The total power consumption of this SAR ADC is only 1.55 mW at 100-MSPS. It achieves then a figure of merit of 85.6 fJ/step.

Keywords: CMOS analog to digital converter, dynamic comparator, image sensor application, successive approximation register.

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Authors: Dipankar Dhabak, Soumya Pandit

Abstract:

This paper presents an adaptive technique for generation of data required for construction of artificial neural network-based performance model of nano-scale CMOS inverter circuit. The training data are generated from the samples through SPICE simulation. The proposed algorithm has been compared to standard progressive sampling algorithms like arithmetic sampling and geometric sampling. The advantages of the present approach over the others have been demonstrated. The ANN predicted results have been compared with actual SPICE results. A very good accuracy has been obtained.

Keywords: CMOS Inverter, Nano-scale, Adaptive Sampling, ArtificialNeural Network

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Authors: Raheleh Hedayati, Sanaz Haddadian, Hooman Nabovati

Abstract:

A 2.4GHz (RF) down conversion Gilbert Cell mixer, implemented in a 0.18-μm CMOS technology with a 1.8V supply, is presented. Current bleeding (charge injection) technique has been used to increase the conversion gain and the linearity of the mixer. The proposed mixer provides 10.75 dB conversion gain ( C G ) with 14.3mw total power consumption. The IIP3 and 1-dB compression point of the mixer are 8dbm and -4.6dbm respectively, at 300 MHz IF frequencies. Comparing the current design against the conventional mixer design, demonstrates better performance in the conversion gain, linearity, noise figure and port-to-port isolation.

Keywords: Mixer, Gilbert Cell, Charge Injection, RFIC, CMOSTechnology.

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Authors: Arash Azizi Mazreah, Mohammad T. Manzuri Shalmani, Hamid Barati, Ali Barati

Abstract:

This paper presents a novel CMOS four-transistor SRAM cell for very high density and low power embedded SRAM applications as well as for stand-alone SRAM applications. This cell retains its data with leakage current and positive feedback without refresh cycle. The new cell size is 20% smaller than a conventional six-transistor cell using same design rules. Also proposed cell uses two word-lines and one pair bit-line. Read operation perform from one side of cell, and write operation perform from another side of cell, and swing voltage reduced on word-lines thus dynamic power during read/write operation reduced. The fabrication process is fully compatible with high-performance CMOS logic technologies, because there is no need to integrate a poly-Si resistor or a TFT load. HSPICE simulation in standard 0.25μm CMOS technology confirms all results obtained from this paper.

Keywords: Positive feedback, leakage current, read operation, write operation, dynamic energy consumption.

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Authors: B.Gholami, S.Gholami, A.Forouzantabar, Sh.Bazyari

Abstract:

A new design approach for three-stage operational amplifiers (op-amps) is proposed. It allows to actually implement a symmetrical push-pull class-AB amplifier output stage for wellestablished three-stage amplifiers using a feedforward transconductance stage. Compared with the conventional design practice, the proposed approach leads to a significant improvement of the symmetry between the positive and the negative op-amp step response, resulting in similar values of the positive/negative settling time. The new approach proves to be very useful in order to fully exploit the potentiality allowed by the op-amp in terms of speed performances. Design examples in a commercial 0.35-μm CMOS prove the effectiveness of theproposed strategy.

Keywords: Low-voltage op amp, design , optimum design

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Authors: Guiheng Zhang, Wei Zhang, Jun Fu, Yudong Wang

Abstract:

A 900 MHz three-stage SiGe power amplifier (PA) with high power gain is presented in this paper. Volterra Series is applied to analyze nonlinearity sources of SiGe HBT device model clearly. Meanwhile, the influence of operating current to IMD3 is discussed. Then a β-helper current mirror bias circuit is applied to improve linearity, since the β-helper current mirror bias circuit can offer stable base biasing voltage. Meanwhile, it can also work as predistortion circuit when biasing voltages of three bias circuits are fine-tuned, by this way, the power gain and operating current of PA are optimized for best linearity. The three power stages which fabricated by 0.18 μm SiGe technology are bonded to the printed circuit board (PCB) to obtain impedances by Load-Pull system, then matching networks are done for best linearity with discrete passive components on PCB. The final measured three-stage PA exhibits 21.1 dBm of output power at 1 dB compression point (OP1dB) with power added efficiency (PAE) of 20.6% and 33 dB power gain under 3.3 V power supply voltage.

Keywords: High gain power amplifier, linearization bias circuit, SiGe HBT model, Volterra Series.

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Authors: V. Eramo, E. Miucci, A. Cianfrani, A. Germoni, M. Listanti

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The power consumption of an Optical Packet Switch equipped with SOA technology based Spanke switching fabric is evaluated. Sophisticated analytical models are introduced to evaluate the power consumption versus the offered traffic, the main switch parameters, and the used device characteristics. The impact of Amplifier Spontaneous Emission (ASE) noise generated by a transmission system on the power consumption is investigated. As a matter of example for 32×32 switches supporting 64 wavelengths and offered traffic equal to 0,8, the average energy consumption per bit is 5, 07 · 10-2 nJ/bit and increases if ASE noise introduced by the transmission systems is increased.

Keywords: Spanke, Amplifier Spontaneous Emission Noise, Power Consumption, Optical Packet Switch.

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Authors: G. Ait Abdelmalek, R. Ziani

Abstract:

In this document, we have proposed a robust conceptual strategy, in order to improve the robustness against the manufacturing defects and thus the reliability of logic CMOS circuits. However, in order to enable the use of future CMOS technology nodes this strategy combines various types of design: DFR (Design for Reliability), techniques of tolerance: hardware redundancy TMR (Triple Modular Redundancy) for hard error tolerance, the DFT (Design for Testability. The Results on largest ISCAS and ITC benchmark circuits show that our approach improves considerably the reliability, by reducing the key factors, the area costs and fault tolerance probability.

Keywords: Design for reliability, design for testability, fault tolerance, manufacturing yield.

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